Andrej Kuznetsov

Professor - Semiconductor physics
Image of Andrej Kuznetsov
Norwegian version of this page
Phone +47 22857762
Username
Visiting address Gaustadalléen 23a Kristen Nygaards hus 0373 Oslo
Postal address Postboks 1048 Blindern 0316 Oslo

Research Interests

The research interests are in understanding of novel semiconductors, advancing fundamental physics and enabling new device functionalities. More specifically, the current research focus is in fabrication, characterisation, and functionalization of defects in semiconductors involving radiation phenomena. 

 

EDUCATION AND QUALIFICATION

 

Name of faculty/department, name of university/institution, country

2000

Department of Electronics, Royal Institute of Technology (Kungliga Tekniska Högskola - KTH), Stockholm, Sweden

Docent (habilitation) in Solid State Electronics, awarded 26.06.2000

1992

Institute of Microelectronic Technology (IPTM), Russian Academy of Sciences, Chernogolovka, Russia, PhD in Physics, awarded 30.10.1992,

Thesis: Point defect generation and enhanced diffusion in silicon during silicide formation

1986

National Research Nuclear University (MEPhI - Moscow Engineering Physics Institute), Moscow, Russia, Master in Physics, awarded 30.2.1986,

Thesis: Investigations of physical adhesion in metal-silicon contacts

Current Position

 

Job title/name of employer/country

2003--

Professor, University of Oslo (UiO), Norway

Previous positions held

 

Job title/name of employer/country

2000-2003

Associate Professor,  Department of Physics, University of Oslo, Norway

1997-2000

Research Associate/Docent, Kungliga Tekniska Högskola (KTH), Stockholm, Sweden

1995-1996

Postdoc, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), CNRS, Orsay, France (supervised by Harry Bernas)

1993-1994

Postdoc, Department of Electronics, Kungliga Tekniska Högskola (KTH), Stockholm, Sweden (supervised by Bengt Svensson)

1992-1997

Research Fellow, Institute of Microelectronic Technology (IPTM), Russian Academy of Sciences, Moscow, Russia

1989-1992

PhD Candidate, Institute of Microelectronic Technology (IPTM), Russian Academy of Sciences, Chernogolovka, Russia (supervised by Victor Mordkovich)

1986-1988

Junior Research Fellow, Institute of Microelectronic Technology (IPTM), Russian Academy of Sciences, Chernogolovka, Russia               

MOBILITY

 

Name of faculty/department/centre, name of university/institution/country  

2019

Visiting Professor, Korea University, Seoul, Korea (hosted by Inhwan Lee)

2013

Visiting Professor, Institute of Physics, Chinese Academy of Science (CAS), Beijing, China (hosted by Xiaolong Du)

2011

Visiting Professor, Aix-Marseille Université (AMU), France (hosted by Isabelle Berbezier)

2001

Visiting Fellow, Centre de Recherche sur les Mécanismes de la Croissance Cristalline (CRMC2), CNRS Luminy, France (hosted by Patrick Gas)

2000

Visiting Scientist, Dept of Electronic Materials Engineering, Australian National University (ANU), Canberra, Australia (hosted by ‎Chennupati Jagadish)

1996

Visiting Scientist, FOM Institute for Atomic and Molecular Physics (AMOLF), Amsterdam, The Netherlands (hosted by Frans Saris)

TEACHING ACTIVITIES            

 

Teaching position – topic, name of university/institution/country

2009-2020

Instructor – Solid State Physics, Department of Physics, University of Oslo, Norway

2001-2009

Instructor – Physics Lab Course, Department of Physics, University of Oslo, Norway

2000

Instructor – Semiconductor Components, Royal Institute of Technology, Stockholm, Sweden

1999-2000

Instructor – Diffusion in Materials, Royal Institute of Technology, Stockholm, Sweden

ORGANISATION OF MEETINGS                        

 

Role and name of event/number of participants/country

2019--

Co-organizer, 31st International Conference on Defects in Semiconductors (ICDS), Norway

2019--

International Advisory Board Member, Gettering And Defect Engineering in Semiconductor Technology (GADEST), Berlin/Germany (2019)

2018--

Co-founder and co-chair of the annual International Conference on Radiation and Emission in Materials (ICREM), 1st- 2018 Chiang Mai, 2nd- 2019 Bangkok, 3rd- 2020 Chiang Mai

2015--

International Advisory Board Member “International Workshop on ZnO and related materials (IWZnO), Taipei/Taiwan (2016), Warsaw/Poland (2018) and Boling Green/USA(2020) 

2013

Co-chair, MRS Symposium on Nanostructured Semiconductors and Nanotechnology, San Francisco, USA

2006

Co-chair, E-MRS Symposium on Si-based Materials for Advanced Microelectronic Devices, Strasbourg, France

Track record

Total number of publications during the career: >220

Scientific Impact                                         Google Scholar, Sept 2020

Total number of citations:                            4907      (2371 since 2015)

Hirsch-index:                                                36          (23      since 2015)

i10-index (≥10 citations):                             119         (64      since 2015)

Web of Science ResearcherID: AAP-4393-2020

Tags: Semiconductors, Nano- and microtechnology, Heterostructures, Radiation phenomena, Detectors, Solar cells, SMN, China, LENS, Semiconductor physics

Publications

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  • Azarov, Alexander; Park, Ji-Hyeon; Jeon, Dae-Woo; Monakhov, Eduard & Kuznetsov, Andrej (2023). Defect migration energies in Ga2O3 polymorphs measured by variations of temperature and flux under irradiation.
  • Garcia Fernandez, Javier; Kjeldby, Snorre Braathen; Azarov, Alexander; Pokle, Anuj; Nguyen, Phuong Dan & Vines, Lasse [Show all 8 contributors for this article] (2023). Polymorph engineering and radiation tolerance in β-Ga2O3.
  • Kuznetsov, Andrej & Pecharapa, Wisanu (2023). Radiation and Emission Phenomena in Combination. Physica Status Solidi (a) applications and materials science. ISSN 1862-6300. 220(10). doi: 10.1002/pssa.202300317.
  • Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Kumar, Piyush; Galeckas, Augustinas; Kuznetsov, Andrej & Vines, Lasse [Show all 7 contributors for this article] (2022). Impact of C-injection in 4H-SiC on defect distribution and minority carrier lifetime.
  • Vines, Lasse; Monakhov, Eduard & Kuznetsov, Andrej (2022). Defects in semiconductors. Journal of Applied Physics. ISSN 0021-8979. 132(15). doi: 10.1063/5.0127714. Full text in Research Archive
  • Galeckas, Augustinas; Karsthof, Robert Michael; Gana, Kingsly; Kok, Angela; Bathen, Marianne Etzelmüller & Vines, Lasse [Show all 7 contributors for this article] (2022). Cross-sectional carrier lifetime profiling and deep level monitoring in silicon carbide films exhibiting variable carbon vacancy concentrations.
  • Kjeldby, Snorre Braathen; Azarov, Alexander; Nguyen, Phuong Dan; Garcia Fernandez, Javier; Venkatachalapathy, Vishnukanthan & Mikšová, Romana [Show all 10 contributors for this article] (2022). Structure and luminescence properties of Si-implanted β-Ga2O3.
  • Kjeldby, Snorre Braathen; Azarov, Alexander; Nguyen, Phuong Dan; Venkatachalapathy, Vishnukanthan; Mikšová, Romana & Macková, Anna [Show all 10 contributors for this article] (2022). Structural Transformation of β-Ga2O3 through Si-implantation.
  • Azarov, Alexander; Bazioti, Kalliopi; Venkatachalapathy, Vishnukanthan; Vajeeston, Ponniah; Monakhov, Eduard & Kuznetsov, Andrej (2022). Disorder-induced ordering in Ga2O3 polymorphs.
  • Azarov, Alexander; Bazioti, Kalliopi; Venkatachalapathy, Vishnukanthan; Vajeeston, Ponniah; Monakhov, Eduard & Kuznetsov, Andrej (2022). Ion-beam-induced phase transitions in gallium oxide: impact of the implantation temperature .
  • Norby, Truls; Karsthof, Robert Michael; Saeed, Sarmad Waheed; Kuznetsov, Andrej & Vines, Lasse (2022). The p-n junction has nothing to do with ionics. Does it? .
  • Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Linnarsson, Margareta; Galeckas, Augustinas; Kuznetsov, Andrej & Grossner, Ulrike [Show all 7 contributors for this article] (2021). Stability, evolution and diffusion of intrinsic point defects in 4H-SiC.
  • Kuznetsov, Andrej; Dangtip, Somsak & Intarasiri, Saweat (2021). Radiation and Emission in Materials: Similarity of Principles and Multi-Functional Applications. Physica Status Solidi (a) applications and materials science. ISSN 1862-6300. 218(1). doi: 10.1002/pssa.202000772.
  • Olsen, Vegard Skiftestad; Øversjøen, Vetle; Frodason, Ymir Kalmann; Cooil, Simon; Lee, In-Hwan & Vines, Lasse [Show all 7 contributors for this article] (2021). Electrical control in ZnSnN2 by tailoring intrinsic and extrinsic defects.
  • Bazioti, Kalliopi; Olsen, Vegard Skiftestad; Azarov, Alexander; Johansen, Klaus Magnus H; Kuznetsov, Andrej & Vines, Lasse [Show all 7 contributors for this article] (2021). Thermal evolution of point and extended defects in N-implanted ZnO and (ZnO)1−x(GaN)x thin films: STEM-EELS investigations.
  • Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Monakhov, Eduard & Kuznetsov, Andrej (2021). Radiation defect dynamics in β-Ga2O3: ion flux vs irradiation temperature.
  • Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Monakhov, Eduard & Kuznetsov, Andrej (2021). Dose-rate effect in β-Ga2O3.
  • Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Monakhov, Eduard & Kuznetsov, Andrej (2021). Dominating migration barrier for intrinsic defects in gallium oxide at and above room temperature .
  • Bazioti, Kalliopi; Olsen, Vegard Skiftestad; Azarov, Alexander; Johansen, Klaus Magnus H; Svensson, Bengt Gunnar & Kuznetsov, Andrej [Show all 8 contributors for this article] (2020). Role of nitrogren in defect evolution in ZnO and (ZnO)₁−ₓ(GaN)ₓ: STEM-EELS nanoscale investigations.
  • Borgersen, Jon; Vines, Lasse; Johansen, Klaus Magnus H; Kuznetsov, Andrej; von Wenckstern, Holger & Perez, Jesus Zuniga [Show all 7 contributors for this article] (2019). Using intrinsic defects as dopants in wide band gap semiconducting oxides.
  • Borgersen, Jon; Johansen, Klaus Magnus H; Vines, Lasse; Kuznetsov, Andrej; Frodason, Ymir Kalmann & von Wenckstern, Holger [Show all 9 contributors for this article] (2019). Electrical properties of intrinsic defects in wide band gap oxides.
  • Azarov, Alexander; Galeckas, Augustinas; Mieszczyński, Cyprian; Hallen, Anders & Kuznetsov, Andrej (2019). Effects of annealing on photoluminescence and defect interplay in ZnO bombarded with heavy ions: crucial role of the ion dose.
  • Vines, Lasse; Ingebrigtsen, Mads Eide; Zimmermann, Christian; Rønning, Vegard & Kuznetsov, Andrej (2019). Electrically Active Defects in β-Ga2O3 .
  • Bazioti, Kalliopi; Olsen, Vegard Skiftestad; Azarov, Alexander; Kuznetsov, Andrej; Vines, Lasse & Prytz, Øystein (2019). Defect formation and thermal evolution in ZnO-based structures (Highlight talk).
  • Bazioti, Kalliopi; Olsen, Vegard Skiftestad; Johansen, Klaus Magnus H; Azarov, Alexander; Kuznetsov, Andrej & Vines, Lasse [Show all 7 contributors for this article] (2019). Transmission Electron Microscopy methods for atomic-scale investigations of semiconductor properties .
  • Bazioti, Kalliopi; Olsen, Vegard Skiftestad; Alexander, Azarov; Kuznetsov, Andrej; Vines, Lasse & Prytz, Øystein (2019). STEM-EELS investigation of defect formation and thermal evolution in ZnO.
  • Venkatachalapathy, Vishnukanthan; Vines, Lasse & Kuznetsov, Andrej (2019). Polarization-controlled interface charges for generation of open-circuit voltage higher than the band gap towards “Polarization Photovoltaics” solar cell.
  • Venkatachalapathy, Vishnukanthan; Vajeeston, Ponniah; Galeckas, Augustinas; Vines, Lasse & Kuznetsov, Andrej (2018). Direct and indirect bandgaps of Cadmium Oxide.
  • Olsen, Vegard Skiftestad; Bazioti, Kalliopi; Azarov, Alexander; Granerød, Cecilie Skjold; Svensson, Bengt Gunnar & Kuznetsov, Andrej [Show all 8 contributors for this article] (2018). Bandgap bowing in crystalline (ZnO)1-x(GaN)x thin films.
  • Zhan, Wei; Granerød, Cecilie Skjold; Venkatachalapathy, Vishnukanthan; Johansen, Klaus Magnus H; Jensen, Ingvild Julie Thue & Kuznetsov, Andrej [Show all 7 contributors for this article] (2018). Reply to Comment on 'Nanoscale mapping of optical band gaps using monochromated electron energy loss spectroscopy'. Nanotechnology. ISSN 0957-4484. 29(31). doi: 10.1088/1361-6528/aac3ed.
  • Borgersen, Jon Arthur; Johansen, Klaus Magnus H & Kuznetsov, Andrej (2017). Characterisation of the specific contact resistance to indium oxides.
  • Bergum, Kristin; Borgersen, Jon Arthur; Ellingsen, Josef Gert Åsheim; Frodason, Ymir Kalmann; Galeckas, Augustinas & Ingebrigtsen, Mads Eide [Show all 8 contributors for this article] (2017). Omvisning MiNaLab.
  • Varslott, Kristoffer Wannebo; Kuznetsov, Andrej; Borgersen, Jon & Bazioti, Calliope (2021). The Effect on Plasmonic Behaviour in Quasi Two-Dimensional GeSe by Variation in Thickness & Phases. Universitetet i Oslo.
  • Tømta, Sindre Ludvigsen; Kuznetsov, Andrej; Gongora, David Rivas & Karsthof, Robert Michael (2021). Single-Photon Emitters in Silicon for Quantum Technology. Universitetet i Oslo.
  • Yaseen, Anisa; Karazhanov, Smagul; Kuznetsov, Andrej & Cremades, Ana (2020). Polymer-Silicon interface study. Universitetet i Oslo.
  • Kvamsdal, Kjell-Erik; Kuznetsov, Andrej & Ayedh, Hussein Mohammed Hussein (2019). Carbon vacancy engineering in p+n 4H-SiC diodes by thermal processing. Universitetet i Oslo.
  • Zhan, Wei; Prytz, Øystein; Kuznetsov, Andrej & Flage-Larsen, Espen (2018). Band gap mapping of alloyed ZnO using probe-corrected and monochromated STEM-EELS. Reprosentralen, University of Oslo. ISSN 1501-7710.

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Published Nov. 4, 2010 12:22 PM - Last modified Jan. 19, 2024 9:17 AM