Hussein Ayedh

Image of Hussein Ayedh
Phone +47-22840937
Username
Visiting address Gaustadalléen 23C MiNaLab 0373 OSLO
Postal address Postboks 1048 Blindern 0316 OSLO

Higher education and employment history

  • 2009 – 2011 Master of Science in Physics,  Lund University - Sweden

Master's Thesis: Simulation of Acoustic Phonons in Nanowire and Nanowire Heterostructure

  • 2006 2009  Teacher Assistant at Thamar University - Yemen
  • 2000 – 2005 Bachelor of Science in Physics,  Babylon University - Iraq 

             Bachelor's Project: The Fiber optics and thier applications.

  • 1998 – 1999 High school diploma, Dhamar Scientific Institute - Yemen.
Tags: SMN, Physics, LENS

Publications

Hussein Ayedh and Andreas Wacker, “Acoustic phonons in nanowires with embedded heterostructures”, Journal of Nanomaterials, vol. 2011, Article ID 743846, 7 pages, 2011. doi:10.1155/2011/743846.

  • -        Ayedh, Hussein; Bobal, Viktor; Nipoti, R; Hallen, Anders & Svensson, Bengt Gunnar (2014). Formation of carbon vacancy in 4H Silicon Carbide during high-temperature processing. Journal of Applied Physics.  ISSN 0021-8979.  115(1) . doi: 10.1063/1.4837996
  • Ayedh, Hussein Mohammed Hussein; Puzzanghera, M.; Svensson, Bengt Gunnar & Nipoti, Roberta (2017). Dlts study on Al<sup>+</sup> ion implanted and 1950?c annealed p-i-n 4H-SiC vertical diodes. Materials Science Forum.  ISSN 0255-5476.  897 MSF, s 279- 282 . doi: 10.4028/www.scientific.net/MSF.897.279
  • Galeckas, Augustinas; Ayedh, Hussein Mohammed Hussein; Bergman, J. Peder & Svensson, Bengt Gunnar (2017). Depth-resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon Vacancy Elimination. Materials Science Forum.  ISSN 0255-5476.  897, s 258- 261 . doi: 10.4028/www.scientific.net/MSF.897.258
  • Alfieri, Giovanni; Mihaila, A.; Ayedh, Hussein Mohammed Hussein; Svensson, Bengt Gunnar; Hazdra, P.; Godignon, P.; Millan, J. & Kicin, S (2016). Deep level characterization of 5 MeV proton irradiated SiC PiN diodes. Materials Science Forum.  ISSN 0255-5476.  858, s 308- 311 . doi: 10.4028/www.scientific.net/MSF.858.308
  • Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2016). Formation and annihilation of carbon vacancies in 4H-SiC. Materials Science Forum.  ISSN 0255-5476.  858, s 331- 336 . doi: 10.4028/www.scientific.net/MSF.858.331
  • Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2016). Controlling the carbon vacancy concentration in 4H-SiC subjected to high temperature treatment. Materials Science Forum.  ISSN 0255-5476.  858, s 414- 417 . doi: 10.4028/www.scientific.net/MSF.858.414
  • Ayedh, Hussein Mohammed Hussein; Hallen, Anders & Svensson, Bengt Gunnar (2015). Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species. Journal of Applied Physics.  ISSN 0021-8979.  118(17) . doi: 10.1063/1.4934947
  • Ayedh, Hussein Mohammed Hussein; Nipoti, R; Hallen, A. & Svensson, Bengt Gunnar (2015). Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures. Applied Physics Letters.  ISSN 0003-6951.  107(25) . doi: 10.1063/1.4938242
  • Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Nipoti, R; Hallen, Anders & Svensson, Bengt Gunnar (2014). Formation of carbon vacancy in 4H Silicon Carbide during high-temperature processing. Journal of Applied Physics.  ISSN 0021-8979.  115(1) . doi: 10.1063/1.4837996 Full text in Research Archive.

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  • Ayedh, Hussein Mohammed Hussein (2016). Controlling the Carbon Vacancy in 4H-Silicon Carbide.
  • Ayedh, Hussein Mohammed Hussein; Galeckas, Augustinas; Ma, Quanbao; Bobal, Viktor; Iwamoto, Naoya; Nipoti, R; Hallen, Anders & Svensson, Bengt Gunnar (2016). Point defects in 4H-SiC.
  • Ayedh, Hussein Mohammed Hussein (2014). Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide.
  • Svensson, Bengt Gunnar; Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Iwamoto, Naoya; Hallén, Anders & Niputo, R (2014). Point Defects in 4H-Si.

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Published Jan. 9, 2013 11:13 AM - Last modified Aug. 17, 2016 11:58 AM