Josef Gert Åsheim Ellingsen

Doctoral Research Fellow - Semiconductor physics
Norwegian version of this page
Visiting address Gaustadalléen 23a Kristen Nygaards hus 0373 OSLO
Postal address Postboks 1048 Blindern 0316 OSLO
Tags: SMN


  • Azarov, Alexander; Galeckas, Augustinas; Wendler, Elke; Ellingsen, Josef Gert Åsheim; Monakhov, Edouard & Svensson, Bengt Gunnar (2017). Normal and reverse defect annealing in ion implanted II-VI oxide semiconductors. Journal of Applied Physics.  ISSN 0021-8979.  122, s 115701 . doi:

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Published Jan. 23, 2015 3:12 PM - Last modified Mar. 24, 2015 9:04 AM