Naveengoud Ganagona
Stipendiat
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Gruppe for halvlederfysikk
English
Brukernavn
Besøksadresse
MiNaLab
Gaustadalléen 23C
0373 OSLO
Postadresse
Postboks 1048 Blindern
0316 OSLO
Publikasjoner
- Ganagona, Naveengoud; Raeissi, Bahman; Vines, Lasse; Monakhov, Edouard & Svensson, Bengt Gunnar (2012). Defects in p-type Cz-silicon irradiated at elevated temperatures. Physica Status Solidi. C, Current topics in solid state physics. ISSN 1610-1634. 9(10-11), s 2009- 2012 . doi: 10.1002/pssc.201200217
- Ganagona, Naveengoud; Raeissi, Bahman; Vines, Lasse; Monakhov, Edouard & Svensson, Bengt Gunnar (2012). Formation of donor and acceptor states of the divacancy-oxygen centre in p-type Cz-silicon. Journal of Physics: Condensed Matter. ISSN 0953-8984. 24(43) . doi: 10.1088/0953-8984/24/43/435801
- Ganagona, Naveengoud; Raeissi, Bahman; Vines, Lasse; Monakhov, Edouard & Svensson, Bengt Gunnar (2012). Formation of defect‐impurity complexes with high thermal stability in p‐type Cz‐silicon.
- Ganagona, Naveengoud; Raeissi, Bahman; Vines, Lasse; Monakhov, Edouard & Svensson, Bengt Gunnar (2011). DLTS Analysis of prominent electron trap in proton irradiated p-type silicon.
Publisert 1. feb. 2011 10:52
- Sist endret 10. sep. 2012 11:24