SiALD - Novel Silicon deposition processes by ALD (completed)

The development of low cost, high energy efficiency thin-film solar cells is a key to future scale up implementation of photovoltaics. The proposed fundamental study addresses novel processes for deposition of ultrathin films of silicon materials by atomic layer deposition (ALD).

About the project

The aim of the project is to develop cheap, scalable processes for silicon containing materials applicable in PV processes of next generation solar cells. Although the ALD technique is relatively mature, no scalable processes for deposition of silicon type materials such as Si, SiOx, SiC, and SiNx are at hand. The project is expected to lead to novel processes for such types of materials with a potential for rapid industrial implementation. The project will develop novel types of compounds containing silicon suitable as precursors for thin film deposition by ALD. The compounds are distinctly beyond state of art and will cover a new range of ALD chemistry with respect to silicon materials.

The project is constructed from four sub-projects with emphasis on:
WP1: Development of novel precursors
WP2: Development of ALD processes based on novel precursors
WP3: Reaction modeling of novel precursors
WP4: in situ/ex situ characterization of processes and deposited materials

The different sub-projects are mutually benefit from each other and aid in design of novel materials and processes.

Objectives

Primary objective: Develop efficient processes for deposition of silicon containing materials by ALD. Main focus on deposition of Si, but also emphasis on: SiC, Si3N4, SiNC, SiOC, and SiO2.

The project is divided into four work packages:

WP1: Development of precursors.
The goal is to synthesize precursors containing silicon that are thermally stable, highly reactive and volatile. Four different classes of compounds are identified. The project will also synthesize precursors based on halides.

WP2: ALD process development
The goal is to use investigate the suitability of compounds developed in WP1 as precursors for ALD.

WP3: Reaction modelling
The goal is to develop understanding of the reaction mechanisms in order to provide feedback into synthesis of the precursors.

WP4: Characterisation
Two parts where one investigates the reaction mechanisms using spectroscopic techniques as support for WP3. The other characterises the electronic properties of the deposited materials. 

Financing

The project is financed by the Research Council of Norway.

Published Mar. 25, 2013 10:33 AM - Last modified Feb. 6, 2015 1:20 PM

Participants

  • Ola Nilsen Universitetet i Oslo
  • Mohammed Amin Karim Ahmed Universitetet i Oslo
  • Frank Herklotz Universitetet i Oslo
  • Karina Barnholt Klepper Universitetet i Oslo
  • Vajeeston Ponniah Universitetet i Oslo
  • Simon Francis Universitetet i Oslo
Detailed list of participants