Hussein Ayedh

- Hussein Ayedh and Andreas Wacker, “Acoustic phonons in nanowires with embedded heterostructures”, Journal of Nanomaterials, vol. 2011, Article ID 743846, 7 pages, 2011. doi:10.1155/2011/743846.

• -        Ayedh, Hussein; Bobal, Viktor; Nipoti, R; Hallen, Anders & Svensson, Bengt Gunnar (2014). Formation of carbon vacancy in 4H Silicon Carbide during high-temperature processing. Journal of Applied Physics.  ISSN 0021-8979.  115(1) . doi: 10.1063/1.4837996

• Woerle, Judith; Bathen, Marianne Etzelmüller; Prokscha, Thomas; Galeckas, Augustinas; Ayedh, Hussein Mohammed Hussein; Vines, Lasse & Grossner, Ulrike (2020). Muon Interaction with Negative-U and High-Spin-State Defects: Differentiating Between C and Si Vacancies in 4H-SiC. Physical Review Applied.  ISSN 2331-7019.  14 . doi: 10.1103/PhysRevApplied.14.054053 Full text in Research Archive.
• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, José; Frodason, Ymir Kalmann & Vines, Lasse (2019). Electrical charge state identification and control for the silicon vacancy in 4H-SiC. npj Quantum Information.  ISSN 2056-6387.  5(1), s 1- 9 . doi: 10.1038/s41534-019-0227-y Full text in Research Archive.
• Ayedh, Hussein Mohammed Hussein; Grigorev, Aleksei; Galeckas, Augustinas; Svensson, Bengt Gunnar & Monakhov, Eduard (2019). Annealing Kinetics of the Interstitial Carbon–Dioxygen Complex in Silicon. Physica Status Solidi (a) applications and materials science.  ISSN 1862-6300.  216(14), s 1- 5 . doi: 10.1002/pssa.201800986
• Bathen, Marianne Etzelmüller; Coutinho, José; Ayedh, Hussein Mohammed Hussein; Hassan, Jawad U; Farkas, Ildiko; Öberg, Sven; Frodason, Ymir Kalmann; Svensson, Bengt Gunnar & Vines, Lasse (2019). Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment. Physical review B (PRB).  ISSN 2469-9950.  100(1), s 014103-1- 014103-15 . doi: 10.1103/PhysRevB.100.014103 Full text in Research Archive.
• Ayedh, Hussein Mohammed Hussein; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Hassan, Jawad U; Bergman, J. P.; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2018). Controlling the carbon vacancy in 4H-SiC by thermal processing. ECS Transactions.  ISSN 1938-5862.  86(12), s 91- 97 . doi: 10.1149/08612.0091ecst
• Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2018). Kinetics modeling of the carbon vacancy thermal equilibration in 4H-SiC. Materials Science Forum.  ISSN 0255-5476.  924 MSF, s 233- 236 . doi: 10.4028/www.scientific.net/MSF.924.233 Full text in Research Archive.
• Bathen, Marianne Etzelmüller; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Farkas, Ildiko; Janzen, Erik & Svensson, Bengt Gunnar (2018). Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiC. Materials Science Forum.  ISSN 0255-5476.  924, s 200- 203 . doi: 10.4028/www.scientific.net/MSF.924.200
• Linnarsson, MK; Ayedh, Hussein Mohammed Hussein; Hallen, A; Vines, Lasse & Svensson, Bengt Gunnar (2018). Surface erosion of ion-implanted 4H-SiC during annealing with carbon cap. Materials Science Forum.  ISSN 0255-5476.  924 MSF, s 373- 376 . doi: 10.4028/www.scientific.net/MSF.924.373
• Ayedh, Hussein Mohammed Hussein; Iwamoto, Naoya; Nipoti, R; Hallén, Anders & Svensson, Bengt Gunnar (2017). Formation of D-Center in p-type 4H-SiC epi-layers during high temperature treatments. Materials Science Forum.  ISSN 0255-5476.  897 MSF, s 262- 265 . doi: 10.4028/www.scientific.net/MSF.897.262
• Ayedh, Hussein Mohammed Hussein; Nipoti, R; Hallen, A & Svensson, Bengt Gunnar (2017). Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect. Journal of Applied Physics.  ISSN 0021-8979.  122(2) . doi: 10.1063/1.4991815
• Ayedh, Hussein Mohammed Hussein; Puzzanghera, M.; Svensson, Bengt Gunnar & Nipoti, Roberta (2017). Dlts study on Al+ ion implanted and 1950oC annealed p-i-n 4H-SiC vertical diodes. Materials Science Forum.  ISSN 0255-5476.  897 MSF, s 279- 282 . doi: 10.4028/www.scientific.net/MSF.897.279
• Galeckas, Augustinas; Ayedh, Hussein Mohammed Hussein; Bergman, J. Peder & Svensson, Bengt Gunnar (2017). Depth-resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon Vacancy Elimination. Materials Science Forum.  ISSN 0255-5476.  897, s 258- 261 . doi: 10.4028/www.scientific.net/MSF.897.258
• Gusakov, Vasilii E; Lastovskii, Stanislau B; Murin, Leonid; Tolkacheva, Ekaterina A; Khirunenko, Lyudmila I; Sosnin, Mikhail G; Duvanskii, Andrei V; Markevich, Vladimir P.; Halsall, Matthew P; Peaker, Anthony R.; Kolevatov, Ilia; Ayedh, Hussein Mohammed Hussein; Monakhov, Edouard & Svensson, Bengt Gunnar (2017). The di-interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms. Physica Status Solidi (a) applications and materials science.  ISSN 1862-6300.  214(7) . doi: 10.1002/pssa.201700261
• Nipoti, Roberta; Ayedh, Hussein Mohammed Hussein & Svensson, Bengt Gunnar (2017). Defects related to electrical doping of 4H-SiC by ion implantation. Materials Science in Semiconductor Processing.  ISSN 1369-8001.  78, s 13- 21 . doi: 10.1016/j.mssp.2017.10.021
• Alfieri, Giovanni; Mihaila, A.; Ayedh, Hussein Mohammed Hussein; Svensson, Bengt Gunnar; Hazdra, P.; Godignon, P.; Millan, J. & Kicin, S (2016). Deep level characterization of 5 MeV proton irradiated SiC PiN diodes. Materials Science Forum.  ISSN 0255-5476.  858, s 308- 311 . doi: 10.4028/www.scientific.net/MSF.858.308
• Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2016). Formation and annihilation of carbon vacancies in 4H-SiC. Materials Science Forum.  ISSN 0255-5476.  858, s 331- 336 . doi: 10.4028/www.scientific.net/MSF.858.331
• Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2016). Controlling the carbon vacancy concentration in 4H-SiC subjected to high temperature treatment. Materials Science Forum.  ISSN 0255-5476.  858, s 414- 417 . doi: 10.4028/www.scientific.net/MSF.858.414
• Ayedh, Hussein Mohammed Hussein; Hallen, Anders & Svensson, Bengt Gunnar (2015). Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species. Journal of Applied Physics.  ISSN 0021-8979.  118(17) . doi: 10.1063/1.4934947
• Ayedh, Hussein Mohammed Hussein; Nipoti, R; Hallen, A. & Svensson, Bengt Gunnar (2015). Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures. Applied Physics Letters.  ISSN 0003-6951.  107(25) . doi: 10.1063/1.4938242
• Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Nipoti, R; Hallen, Anders & Svensson, Bengt Gunnar (2014). Formation of carbon vacancy in 4H Silicon Carbide during high-temperature processing. Journal of Applied Physics.  ISSN 0021-8979.  115(1) . doi: 10.1063/1.4837996 Full text in Research Archive.

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• Kvamsdal, Kjell-Erik; Kuznetsov, Andrej & Ayedh, Hussein Mohammed Hussein (2019). Carbon vacancy engineering in p+n 4H-SiC diodes by thermal processing.
• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, J & Vines, Lasse (2019). Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-SiC.
• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, José; Frodason, Ymir Kalmann & Vines, Lasse (2019). Electrical charge-state identification and emission intensity modulation of the silicon vacancy in 4H-SiC.
• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, José & Vines, Lasse (2019). Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-Si. Show summary

  The high-spin ground state and bright single-photon emission of the silicon vacancy (VSi) in 4H-SiC offer exciting possibilities for quantum technology and spintronics applications, especially as both are available at room temperature [1,2]. However, quantum compatibility only exists for the singly negative VSi, and single-photon counts are still too low to realize efficient spin-photon interfaces without resorting to complex nanofabrication methods [3]. Herein, we demonstrate enhanced optical emission from VSi using Schottky barrier diode (SBD) formation, and attribute our findings to increased occupancies of VSi-1.

• Ayedh, Hussein Mohammed Hussein; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Ul Hassan, Jawad; Bergman, J. P.; Nipoti, Roberta; Hallén, Anders & Svensson, Bengt Gunnar (2018). Controlling the Carbon Vacancy in 4H-SiC By Thermal Processing.
• Ayedh, Hussein Mohammed Hussein; Azarov, Alexander; Galeckas, Augustinas; Svensson, Bengt Gunnar & Monakhov, Edouard (2017). DLTS study of the interstitial carbon–oxygen complex in proton irradiated p-type Si.
• Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2017). Kinetics modeling of the carbon vacancy thermal equilibration in 4H-SiC.
• Bathen, Marianne Etzelmüller; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Farkas, Ildiko; Janzen, Erik & Svensson, Bengt Gunnar (2017). Diffusion of the Carbon Vacancy in a-cut and c-cut n-type 4H-SiC.
• Venkatachalapathy, Vishnukanthan; Ayedh, Hussein Mohammed Hussein; Vajeeston, Ponniah; Vines, Lasse; Monakhov, Edouard & Kuznetsov, Andrej (2017). Quest for Si based multi-junction solar cells covering the entire solar spectrum.
• Ayedh, Hussein Mohammed Hussein (2016). Controlling the Carbon Vacancy in 4H-Silicon Carbide.
• Ayedh, Hussein Mohammed Hussein; Galeckas, Augustinas; Ma, Quanbao; Bobal, Viktor; Iwamoto, Naoya; Nipoti, R; Hallen, Anders & Svensson, Bengt Gunnar (2016). Point defects in 4H-SiC.
• Ayedh, Hussein Mohammed Hussein; Iwamoto, Naoya; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2016). Formation of D-center in p-type 4H-SiC epi-layers during high temperature processing.
• Ayedh, Hussein Mohammed Hussein; Hallen, Anders & Svensson, Bengt Gunnar (2015). Annihilation of Carbon Vacancies in 4H-SiC epi-layers by near-surface implantation of C, Al and Si ions.
• Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2015). Controlling the Carbon Vacancy Concentration in 4H-Silicon Carbide Subjected to High Temperature Treatment.
• Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2014). Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide.
• Svensson, Bengt Gunnar; Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Iwamoto, Naoya; Hallén, Anders & Niputo, R (2014). Point Defects in 4H-Si.
• Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2013). Formation of Carbon Vacancy in 4H-SiC During High-Temperature Treatment.
• Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2013). Formation of carbon vacancy during high-temperature treatment of 4H-SiC.

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