Hussein Ayedh

Image of Hussein Ayedh
Phone +47 22840937
Username
Visiting address Sem Sælands vei 24 Fysikkbygningen 0371 OSLO
Postal address Postboks 1048 Blindern 0316 OSLO

Higher education and employment history

  • 2009 – 2011 Master of Science in Physics,  Lund University - Sweden

Master's Thesis: Simulation of Acoustic Phonons in Nanowire and Nanowire Heterostructure

  • 2006 2009  Teacher Assistant at Thamar University - Yemen
  • 2000 – 2005 Bachelor of Science in Physics,  Babylon University - Iraq 

             Bachelor's Project: The Fiber optics and thier applications.

  • 1998 – 1999 High school diploma, Dhamar Scientific Institute - Yemen.
Tags: SMN, Physics, LENS

Publications

Hussein Ayedh and Andreas Wacker, “Acoustic phonons in nanowires with embedded heterostructures”, Journal of Nanomaterials, vol. 2011, Article ID 743846, 7 pages, 2011. doi:10.1155/2011/743846.

  • -        Ayedh, Hussein; Bobal, Viktor; Nipoti, R; Hallen, Anders & Svensson, Bengt Gunnar (2014). Formation of carbon vacancy in 4H Silicon Carbide during high-temperature processing. Journal of Applied Physics.  ISSN 0021-8979.  115(1) . doi: 10.1063/1.4837996

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  • Kvamsdal, Kjell-Erik; Kuznetsov, Andrej & Ayedh, Hussein Mohammed Hussein (2019). Carbon vacancy engineering in p+n 4H-SiC diodes by thermal processing.
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, J & Vines, Lasse (2019). Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-SiC.
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, José; Frodason, Ymir Kalmann & Vines, Lasse (2019). Electrical charge-state identification and emission intensity modulation of the silicon vacancy in 4H-SiC.
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, José & Vines, Lasse (2019). Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-Si. Show summary
  • Ayedh, Hussein Mohammed Hussein; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Ul Hassan, Jawad; Bergman, J. P.; Nipoti, Roberta; Hallén, Anders & Svensson, Bengt Gunnar (2018). Controlling the Carbon Vacancy in 4H-SiC By Thermal Processing.
  • Ayedh, Hussein Mohammed Hussein; Azarov, Alexander; Galeckas, Augustinas; Svensson, Bengt Gunnar & Monakhov, Edouard (2017). DLTS study of the interstitial carbon–oxygen complex in proton irradiated p-type Si.
  • Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2017). Kinetics modeling of the carbon vacancy thermal equilibration in 4H-SiC.
  • Bathen, Marianne Etzelmüller; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Farkas, Ildiko; Janzen, Erik & Svensson, Bengt Gunnar (2017). Diffusion of the Carbon Vacancy in a-cut and c-cut n-type 4H-SiC.
  • Venkatachalapathy, Vishnukanthan; Ayedh, Hussein Mohammed Hussein; Vajeeston, Ponniah; Vines, Lasse; Monakhov, Edouard & Kuznetsov, Andrej (2017). Quest for Si based multi-junction solar cells covering the entire solar spectrum.
  • Ayedh, Hussein Mohammed Hussein (2016). Controlling the Carbon Vacancy in 4H-Silicon Carbide.
  • Ayedh, Hussein Mohammed Hussein; Galeckas, Augustinas; Ma, Quanbao; Bobal, Viktor; Iwamoto, Naoya; Nipoti, R; Hallen, Anders & Svensson, Bengt Gunnar (2016). Point defects in 4H-SiC.
  • Ayedh, Hussein Mohammed Hussein; Iwamoto, Naoya; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2016). Formation of D-center in p-type 4H-SiC epi-layers during high temperature processing.
  • Ayedh, Hussein Mohammed Hussein; Hallen, Anders & Svensson, Bengt Gunnar (2015). Annihilation of Carbon Vacancies in 4H-SiC epi-layers by near-surface implantation of C, Al and Si ions.
  • Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2015). Controlling the Carbon Vacancy Concentration in 4H-Silicon Carbide Subjected to High Temperature Treatment.
  • Ayedh, Hussein Mohammed Hussein; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2014). Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide.
  • Svensson, Bengt Gunnar; Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Iwamoto, Naoya; Hallén, Anders & Niputo, R (2014). Point Defects in 4H-Si.
  • Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2013). Formation of Carbon Vacancy in 4H-SiC During High-Temperature Treatment.
  • Ayedh, Hussein Mohammed Hussein; Bobal, Viktor; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2013). Formation of carbon vacancy during high-temperature treatment of 4H-SiC.

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Published Jan. 9, 2013 11:13 AM - Last modified Oct. 30, 2018 2:41 PM