mariebat

Forsker - Fysisk institutt
Bilde av Marianne Etzelmüller Bathen
English version of this page
Brukernavn
Besøksadresse Gaustadalléen 23C MiNaLab 0373 Oslo
Postadresse Postboks 1048 Blindern 0316 Oslo

Faglige interesser

Jeg forsker på defekter i halvledere, altså ting som er feil med krystallstrukturen til halvlederen, som kan brukes som byggeklosser (kvantebits) i kvantedatamaskiner. Materialet jeg forsker på heter silisiumkarbid, og vi bruker ioneimplantasjon (skyter med ionekanon) for å lage kvantebit-defektene. De eksperimentelle teknikkene vi bruker for å studere defektene vi lager dreier rundt elektrisk og optisk karakterisering, og jeg modellerer defektene teoretisk med density functional theory (DFT). 

 

Undervisning

FYS2140, V2017

FYS1120, H2017

FYS2140, V2018

FYS2140, V2019

FYS2210, H2019

 

Verv

2017-d.d. Medlem av Tilsettingsutvalget ved Fysisk institutt

2018-2019 Medlem av Ph.d.-programrådet ved MN-fakultetet 

 

Bakgrunn

2011-2016 Siv. Ing. i nanoteknologi, NTNU

2014-2015 Utveksling ved Univeristy of California, San Diego (UCSD)

 

Emneord: SMN

Publikasjoner

  • Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Galeckas, Augustinas; Kumar, Piyush; Kuznetsov, Andrej & Grossner, Ulrike [Vis alle 7 forfattere av denne artikkelen] (2024). Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime. Materials Science in Semiconductor Processing. ISSN 1369-8001. 176. doi: 10.1016/j.mssp.2024.108316.
  • Kumar, Piyush; Martins, Maria I. M.; Bathen, Marianne Etzelmüller; Prokscha, Thomas & Grossner, Ulrike (2024). Al-implantation induced damage in 4H-SiC. Materials Science in Semiconductor Processing. ISSN 1369-8001. 174. doi: 10.1016/j.mssp.2024.108241.
  • Kumar, Piyush; Belanche, Manuel; Für, Natalija; Guzenko, Luka; Woerle, Judith & Bathen, Marianne Etzelmüller [Vis alle 7 forfattere av denne artikkelen] (2023). Energy-Dependent Impact of Proton Irradiation on 4H-SiC Schottky Diodes. Materials Science Forum. ISSN 0255-5476. 1092, s. 187–192. doi: 10.4028/p-0y444y.
  • Belanche, Manuel; Bathen, Marianne Etzelmüller; Kumar, Piyush; Dorfer, Christian; Martinella, Corinna & Grossner, Ulrike (2023). Minority Carrier Traps Induced by Neutron Reactions with 4H-SiC. Defect and Diffusion Forum. ISSN 1012-0386. 426, s. 23–28. doi: 10.4028/p-724d7y.
  • Martinella, Corinna; Bathen, Marianne Etzelmüller; Javanainen, Arto & Grossner, Ulrike (2023). Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs. Materials Science Forum. ISSN 0255-5476. 1090, s. 179–184. doi: 10.4028/p-3y3lv4.
  • Race, Salvatore; Kumar, Piyush; Natzke, Philipp; Kovacevic-Badstuebner, Ivana; Bathen, Marianne Etzelmüller & Romano, Gianpaolo [Vis alle 12 forfattere av denne artikkelen] (2023). Gate Impedance Analysis of SiC power MOSFETs with SiO2 and High-k Dielectric. Proceedings of the International Symposium on Power Semiconductor Devices & ICs. ISSN 1063-6854. s. 9–12. doi: 10.1109/ISPSD57135.2023.10147725.
  • Kumar, Piyush; Martins, Maria M.; Bathen, Marianne Etzelmüller; Woerle, Judith; Prokscha, Thomas & Grossner, Ulrike (2023). Investigation of the SiO2-SiC Interface Using Low-Energy Muon-Spin-Rotation Spectroscopy. Physical Review Applied. ISSN 2331-7019. 19. doi: 10.1103/PhysRevApplied.19.054025.
  • Dorfer, Christian; Bathen, Marianne Etzelmüller; Race, Salvatore; Kumar, Piyush; Tsibizov, Alexander & Woerle, Judith [Vis alle 7 forfattere av denne artikkelen] (2023). Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique . Applied Physics Letters. ISSN 0003-6951. 122. doi: 10.1063/5.0142217.
  • Für, Natalija; Belanche, Manuel; Martinella, Corinna; Kumar, Piyush; Bathen, Marianne Etzelmüller & Grossner, Ulrike (2023). Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation. IEEE Transactions on Nuclear Science. ISSN 0018-9499. 70(8), s. 1892–1899. doi: 10.1109/TNS.2023.3242760.
  • Bathen, Marianne Etzelmüller; Selnesaunet, Gard Momrak; Enga, Marius; Kjeldby, Snorre Braathen; Müting, Johanna & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2023). Charge State Control Over Point Defects in SiC Devices. Defect and Diffusion Forum. ISSN 1012-0386. 425, s. 35–42. doi: 10.4028/p-6ho92o. Fulltekst i vitenarkiv
  • Kumar, Piyush; Martins, Maria M.; Bathen, Marianne Etzelmüller; Woerle, Judith; Prokscha, Thomas & Grossner, Ulrike (2022). Depth-Resolved Study of the SiO2- SiC Interface Using Low-Energy Muon Spin Rotation Spectroscopy. Materials Science Forum. ISSN 0255-5476. 1062, s. 315–319. doi: 10.4028/p-w73601.
  • Bathen, Marianne Etzelmüller; Lew, C. T.-K.; Woerle, Judith; Dorfer, Christian; Grossner, Ulrike & Castelletto, Stefania [Vis alle 7 forfattere av denne artikkelen] (2022). Characterization methods for defects and devices in silicon carbide. Journal of Applied Physics. ISSN 0021-8979. 131(14). doi: 10.1063/5.0077299.
  • Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Grossner, Ulrike & Vines, Lasse (2022). Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC. Materials Science Forum. ISSN 0255-5476. 1062, s. 371–375. doi: 10.4028/p-ryui6b. Fulltekst i vitenarkiv
  • Galeckas, Augustinas; Karsthof, Robert Michael; Kingsly, Gana; Kok, Angela; Bathen, Marianne Etzelmüller & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2022). Cross-Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations. Physica Status Solidi (a) applications and materials science. ISSN 1862-6300. s. 1–7. doi: 10.1002/pssa.202200449. Fulltekst i vitenarkiv
  • Hebnes, Oliver Lerstøl; Bathen, Marianne Etzelmüller; Schøyen, Øyvind Sigmundson; Winther-Larsen, Sebastian Gregorius; Vines, Lasse & Hjorth-Jensen, Morten (2022). Predicting solid state material platforms for quantum technologies. npj Computational Materials. ISSN 2057-3960. 8(1). doi: 10.1038/s41524-022-00888-3. Fulltekst i vitenarkiv
  • Reed, B.P.; Bathen, Marianne Etzelmüller; Ash, J.W.R.; Meara, C.J.; Zakharov, A.A. & Goss, J.P. [Vis alle 9 forfattere av denne artikkelen] (2022). Diamond (111) surface reconstruction and epitaxial graphene interface. Physical review B (PRB). ISSN 2469-9950. 105(20). doi: 10.1103/PhysRevB.105.205304.
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Kuznetsov, Andrej & Vines, Lasse (2022). Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 131. doi: 10.1063/5.0077308. Fulltekst i vitenarkiv
  • Bathen, Marianne Etzelmüller & Vines, Lasse (2021). Manipulating Single-Photon Emission from Point Defects in Diamond and Silicon Carbide. Advanced Quantum Technologies. 4. doi: 10.1002/qute.202100003. Fulltekst i vitenarkiv
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Karsthof, Robert Michael; Delteil, Aymeric; Sallet, Vincent & Kuznetsov, Andrej [Vis alle 7 forfattere av denne artikkelen] (2021). Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide. Physical review B (PRB). ISSN 2469-9950. 104. doi: 10.1103/PhysRevB.104.045120. Fulltekst i vitenarkiv
  • Woerle, Judith; Bathen, Marianne Etzelmüller; Prokscha, Thomas; Galeckas, Augustinas; Ayedh, Hussein Mohammed Hussein & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2020). Muon Interaction with Negative-U and High-Spin-State Defects: Differentiating Between C and Si Vacancies in 4H-SiC. Physical Review Applied. ISSN 2331-7019. 14. doi: 10.1103/PhysRevApplied.14.054053. Fulltekst i vitenarkiv
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2020). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Physical review B (PRB). ISSN 2469-9950. 102(18). doi: 10.1103/PhysRevB.102.184111. Fulltekst i vitenarkiv
  • Bathen, Marianne Etzelmüller; Vines, Lasse & Coutinho, José (2020). First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC. Journal of Physics: Condensed Matter. ISSN 0953-8984. 33(7). doi: 10.1088/1361-648X/abc804. Fulltekst i vitenarkiv
  • Vasquez, Geraldo Cristian; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Bazioti, Kalliopi; Johansen, Klaus Magnus H & Maestre, D. [Vis alle 11 forfattere av denne artikkelen] (2020). Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles. Nano Letters. ISSN 1530-6984. 20(12), s. 8689–8695. doi: 10.1021/acs.nanolett.0c03472. Fulltekst i vitenarkiv
  • Reinertsen, Vilde Mari; Weiser, Philip Michael; Frodason, Ymir Kalmann; Bathen, Marianne Etzelmüller; Vines, Lasse & Johansen, Klaus Magnus H (2020). Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals. Applied Physics Letters. ISSN 0003-6951. 117. doi: 10.1063/5.0027333. Fulltekst i vitenarkiv
  • Bathen, Marianne Etzelmüller; Linnarsson, Margareta; Ghezellou, Mizagh; Ul Hassan, Jawad & Vines, Lasse (2020). Influence of Carbon Cap on Self-Diffusion in Silicon Carbide. Crystals. ISSN 2073-4352. 10(9). doi: 10.3390/cryst10090752. Fulltekst i vitenarkiv
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Coutinho, José & Vines, Lasse (2020). Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 127(8). doi: 10.1063/1.5140659. Fulltekst i vitenarkiv
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, José [Vis alle 8 forfattere av denne artikkelen] (2019). Electrical charge state identification and control for the silicon vacancy in 4H-SiC. npj Quantum Information. ISSN 2056-6387. 5(1), s. 1–9. doi: 10.1038/s41534-019-0227-y. Fulltekst i vitenarkiv
  • Bathen, Marianne Etzelmüller; Coutinho, José; Ayedh, Hussein Mohammed Hussein; Hassan, Jawad U; Farkas, Ildiko & Öberg, Sven [Vis alle 9 forfattere av denne artikkelen] (2019). Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment. Physical review B (PRB). ISSN 2469-9950. 100(1), s. 014103-1–014103-15. doi: 10.1103/PhysRevB.100.014103. Fulltekst i vitenarkiv
  • Ayedh, Hussein Mohammed Hussein; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Hassan, Jawad U; Bergman, J. P. & Nipoti, Roberta [Vis alle 8 forfattere av denne artikkelen] (2018). Controlling the carbon vacancy in 4H-SiC by thermal processing. ECS Transactions. ISSN 1938-5862. 86(12), s. 91–97. doi: 10.1149/08612.0091ecst.
  • Bathen, Marianne Etzelmüller; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Farkas, Ildiko; Janzen, Erik & Svensson, Bengt Gunnar (2018). Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiC. Materials Science Forum. ISSN 0255-5476. 924, s. 200–203. doi: 10.4028/www.scientific.net/MSF.924.200.
  • Bathen, Marianne Etzelmüller & Linder, Jacob (2017). Spin Seebeck effect and thermoelectric phenomena in superconducting hybrids with magnetic textures or spin-orbit coupling. Scientific Reports. ISSN 2045-2322. 7, s. 1–13. doi: 10.1038/srep41409. Fulltekst i vitenarkiv
  • Linder, Jacob & Bathen, Marianne Etzelmüller (2016). Spin caloritronics with superconductors: Enhanced thermoelectric effects, generalized Onsager response-matrix, and thermal spin currents. Physical Review B. Condensed Matter and Materials Physics. ISSN 1098-0121. 93(22). doi: 10.1103/PhysRevB.93.224509. Fulltekst i vitenarkiv

Se alle arbeider i Cristin

  • Bathen, Marianne Etzelmüller (2024). Deltagelse i Abels Tårn. [Radio]. NRK P2.
  • Bathen, Marianne Etzelmüller; Olsen, Vegard Skiftestad & Vines, Lasse (2024). Hvor går veien? Kvanteteknologiens potensiale i fremtidens teknologi​. .
  • Bathen, Marianne Etzelmüller; Hebnes, Oliver Lerstøl; Schøyen, Øyvind; Winther-Larsen, Sebastian G.; Vines, Lasse & Hjorth-Jensen, Morten (2024). Predicting solid state material platforms for quantum technologies .
  • Bathen, Marianne Etzelmüller & Vines, Lasse (2024). Semiconductors as quantum materials - Ongoing research at the LENS group.
  • Ousdal, Erlend Lemva; Bathen, Marianne Etzelmüller & Vines, Lasse (2023). Controlling directionality of emission from quantum defects through microstructures in Silicon Carbide .
  • Ousdal, Erlend Lemva; Bathen, Marianne Etzelmüller & Vines, Lasse (2023). Optical and electrical characterization of potential single photon emitters in 6H silicon carbide .
  • Bathen, Marianne Etzelmüller (2023). Foredrag om MiNaLab og kvanteteknologi for Byråd for kultur og næring i Oslo kommune .
  • Bathen, Marianne Etzelmüller & Vines, Lasse (2023). Point defects in semiconductors for quantum technologies​ ​ Ongoing research at ​ the University of Oslo​.
  • Bathen, Marianne Etzelmüller (2023). QUANTUM COMPUTERS​ How they work and how to make them ​.
  • Bathen, Marianne Etzelmüller (2023). Deltakelse i Abels Tårn, NRK, 03.11.2023. [Radio]. NRK.
  • Bathen, Marianne Etzelmüller (2023). How to build a quantum technology platform.
  • Bathen, Marianne Etzelmüller & Vines, Lasse (2023). Studieretning i kvanteteknologi​.
  • Bathen, Marianne Etzelmüller; Kumar, Piyush; Ghezellou, Misagh; Belanche, Manuel; Vines, Lasse & Ul-Hassan, Jawad [Vis alle 7 forfattere av denne artikkelen] (2023). Dual configuration of shallow acceptor levels in 4H-SiC.
  • Bathen, Marianne Etzelmüller; Razinkovas, Lukas; Linderälv, Christopher; Vines, Lasse & Grossner, Ulrike (2023). Quantum pressure sensing using the vibronic spectrum of color centers .
  • Bathen, Marianne Etzelmüller; Johnson, Brett C.; Galeckas, Augustinas; martins, maria m; Kumar, Piyush & Silkinis, Rokas [Vis alle 11 forfattere av denne artikkelen] (2023). Doping-induced color centers in silicon carbide ​.
  • Bathen, Marianne Etzelmüller; Enga, Marius Johan; Selnesaunet, Gard Momrak; Kjeldby, Snorre Braathen; Galeckas, Augustinas & Müting, Johanna [Vis alle 8 forfattere av denne artikkelen] (2022). Charge state control over point defects in SiC devices.
  • Bathen, Marianne Etzelmüller; Kumar, Piyush; martins, maria m; Woerle, Judith; Prokscha, Thomas & Grossner, Ulrike (2022). Interaction of in-diffused nitrogen with C and Si lattice sites and vacancies after thermal oxidation and NO annealing.
  • Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Kumar, Piyush; Galeckas, Augustinas; Kuznetsov, Andrej & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2022). Impact of C-injection in 4H-SiC on defect distribution and minority carrier lifetime.
  • Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Kumar, Piyush; Galeckas, Augustinas; Kuznetsov, Andrej Yu. & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2022). Impact of C-injection in SiC on defect distribution and minority carrier lifetime.
  • Bathen, Marianne Etzelmüller; Hebnes, Oliver Lerstøl; Schøyen, Øyvind Sigmundson; Winther-Larsen, Sebastian Gregorius; Vines, Lasse & Hjorth-Jensen, Morten (2022). Predicting Solid State Material Platforms for Quantum Technologies.
  • Einevoll, Gaute & Bathen, Marianne Etzelmüller (2022). Podcast #63: Om kvantedatamaskiner. [Internett]. Podcast "Vett og vitenskap".
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2022). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
  • Galeckas, Augustinas; Karsthof, Robert Michael; Gana, Kingsly; Kok, Angela; Bathen, Marianne Etzelmüller & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2022). Cross-sectional carrier lifetime profiling and deep level monitoring in silicon carbide films exhibiting variable carbon vacancy concentrations.
  • Faraj, Sayed; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Myrold, Andreas; Stene-Johansen, Ingar & Jørstad, Øystein Kalsnes [Vis alle 7 forfattere av denne artikkelen] (2022). Retinal injuries in seven teenage boys from the same handheld laser. American Journal of Ophthalmology Case Reports. 27. doi: 10.1016/j.ajoc.2022.101596. Fulltekst i vitenarkiv
  • Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Linnarsson, Margareta; Galeckas, Augustinas; Kuznetsov, Andrej & Grossner, Ulrike [Vis alle 7 forfattere av denne artikkelen] (2021). Stability, evolution and diffusion of intrinsic point defects in 4H-SiC.
  • Bathen, Marianne Etzelmüller (2021). Resolving the vibronic fine structure of emission from the silicon vacancy in 4H silicon carbide​.
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2021). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Enga, Marius & Vines, Lasse (2021). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
  • Bathen, Marianne Etzelmüller (2021). Paneldeltager på radioprogrammet Abels Tårn. [Radio]. NRK P2.
  • Bathen, Marianne Etzelmüller (2020). Deltagelse i panelet til Radioprogrammet Abels Tårn. [Radio]. NRK P2.
  • Bathen, Marianne Etzelmüller & Olsen, Vegard Skiftestad (2020). Foredrag for FA-studenter om halvlederfysikk.
  • Bathen, Marianne Etzelmüller & Olsen, Vegard Skiftestad (2020). Foredrag for MENA-studenter om halvlederfysikk .
  • Bathen, Marianne Etzelmüller (2020). Deltagelse på Abels Tårn, NRK P2. [Radio]. NRK P2.
  • Bathen, Marianne Etzelmüller (2019). Intervju av TV2 Nyhetskanalen, kl 0710, om kvantedatamaskiner. [TV]. TV2 Nyhetskanalen.
  • Bathen, Marianne Etzelmüller & Jemterud, Torkild (2019). Abels Tårn. [Radio]. NRK P2.
  • Bathen, Marianne Etzelmüller & Jemterud, Torkild (2019). Abels tårn . [Radio]. NRK P2.
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, J [Vis alle 7 forfattere av denne artikkelen] (2019). Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-SiC.
  • Bathen, Marianne Etzelmüller (2019). Kvantedatamaskiner - prinsipp, funksjon, og hvordan de nokså enkelt kan lages på labben.
  • Bathen, Marianne Etzelmüller & Olsen, Vegard Skiftestad (2019). Omvisning for FA og ELITE.
  • Bathen, Marianne Etzelmüller & Caroline, Enge (2019). Norske studenter lager spill til «den neste store teknologien»: Kvantedatamaskinen. [Avis]. Aftenposten.
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, José [Vis alle 8 forfattere av denne artikkelen] (2019). Electrical charge-state identification and emission intensity modulation of the silicon vacancy in 4H-SiC.
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, José [Vis alle 7 forfattere av denne artikkelen] (2019). Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-Si.
  • Bathen, Marianne Etzelmüller & Vines, Lasse (2019). Point defects in semiconductors for quantum technology: Example of silicon vacancy in silicon carbide.
  • Bathen, Marianne Etzelmüller (2019). Abels Tårn. [Radio]. NRK P2.
  • Bathen, Marianne Etzelmüller (2019). Kvantedatamaskiner - prinsipp, funksjon, og hvordan de nokså enkelt kan lages på labben.
  • Bathen, Marianne Etzelmüller; Borgersen, Jon Arthur; Karlsen, Kjetil; Nyborg, Martin; Olsen, Vegard Skiftestad & Reinertsen, Vilde Mari [Vis alle 7 forfattere av denne artikkelen] (2019). Skolebesøk ved MiNaLab.
  • Bathen, Marianne Etzelmüller & Vogt, Yngve (2018). Jakter på fremtidens IT-revolusjon. [Tidsskrift]. Teknisk ukeblad.
  • Ayedh, Hussein Mohammed Hussein; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Ul Hassan, Jawad; Bergman, J. P. & Nipoti, Roberta [Vis alle 8 forfattere av denne artikkelen] (2018). Controlling the Carbon Vacancy in 4H-SiC By Thermal Processing.
  • Bathen, Marianne Etzelmüller & Vogt, Yngve (2018). Defekte materialer kan brukes til kvantedatamaskiner. [Tidsskrift]. Apollon.
  • Bathen, Marianne Etzelmüller (2018). Hvordan kan vi lage fremtidens datamaskiner? .
  • Coutinho, José; Gouveia, J. D.; Demmouche, K.; Bathen, Marianne Etzelmüller & Svensson, Bengt Gunnar (2018). Carbon vacancies and interstitials in 3C- and 4H-SiC: theoretical milestones and challenges.
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Frodason, Ymir Kalmann; Vines, Lasse & Svensson, Bengt Gunnar (2018). Tuning silicon vacancy formation in 4H-SiC via proton irradiation for quantum technology.
  • Bathen, Marianne Etzelmüller; Vines, Lasse; Galeckas, Augustinas; Frodason, Ymir Kalmann & Svensson, Bengt Gunnar (2018). Correlating charge state transitions of the Si vacancy to the S1/S2 peaks in DLTS spectra of n-type 4H-SiC.
  • Bathen, Marianne Etzelmüller; Vines, Lasse; Galeckas, Augustinas; Frodason, Ymir Kalmann & Svensson, Bengt Gunnar (2018). Charge state transitions of the silicon vacancy in 4H-SiC: Combined DLTS, PL and DFT study.
  • Bathen, Marianne Etzelmüller; Ingebrigtsen, Mads Eide; Olsen, Vegard Skiftestad; Rønning, Vegard & Vines, Lasse (2018). Omvisning for studieprogrammene FA og ELITE .
  • Bathen, Marianne Etzelmüller; Vines, Lasse & Riise, Heine Nygard (2018). Ina tar valget: halvlederfysikk.
  • Monakhov, Edouard; Bathen, Marianne Etzelmüller; Bergum, Kristin; Sky, Thomas Neset & Weiser, Philip Michael (2017). Omvisning for the National Natural Science Foundation of China.
  • Bathen, Marianne Etzelmüller; Borgersen, Jon Arthur; Grini, Sigbjørn; Johansen, Klaus Magnus H; Nyborg, Martin & Olsen, Vegard Skiftestad [Vis alle 7 forfattere av denne artikkelen] (2017). Omvisning FAM.
  • Bathen, Marianne Etzelmüller; Bergum, Kristin; Ellingsen, Josef Gert Åsheim; Grini, Sigbjørn; Sky, Thomas Neset & Aarseth, Bjørn Brevig (2017). Omvisning for Arendal VGS.
  • Riise, Heine Nygard; Bathen, Marianne Etzelmüller; Borgersen, Jon Arthur; Grini, Sigbjørn & Johansen, Klaus Magnus H (2017). Besøk frå Nanoskolen 2017.
  • Riise, Heine Nygard; Bathen, Marianne Etzelmüller; Grini, Sigbjørn; Olsen, Vegard Skiftestad & Sky, Thomas Neset (2017). Omvisning MENA.
  • Bathen, Marianne Etzelmüller; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Farkas, Ildiko; Janzen, Erik & Svensson, Bengt Gunnar (2017). Diffusion of the Carbon Vacancy in a-cut and c-cut n-type 4H-SiC.
  • Enga, Marius Johan; Vines, Lasse & Bathen, Marianne Etzelmüller (2021). Exploring Defects in Silicon Carbide for Quantum Technologies; A Density Functional Theory Study. Universitetet i Oslo.
  • Selnesaunet, Gard Momrak; Vines, Lasse & Bathen, Marianne Etzelmüller (2021). Nanostructuring of SiC for novel defect-based quantum technologies. Universitetet i Oslo.
  • Bathen, Marianne Etzelmüller (2020). Point Defects in silicon carbide for quantum technologies: Identification, tuning and control . det matematisk naturvitenskapelige fakultet.

Se alle arbeider i Cristin

Publisert 17. aug. 2016 11:12 - Sist endret 13. des. 2019 13:00