mariebat

• Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Kuznetsov, Andrej & Vines, Lasse (2022). Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 131. doi: 10.1063/5.0077308. Fulltekst i vitenarkiv
• Bathen, Marianne Etzelmüller & Vines, Lasse (2021). Manipulating Single-Photon Emission from Point Defects in Diamond and Silicon Carbide. Advanced Quantum Technologies. 4. doi: 10.1002/qute.202100003. Fulltekst i vitenarkiv
• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Karsthof, Robert Michael; Delteil, Aymeric; Sallet, Vincent & Kuznetsov, Andrej [Vis alle 7 forfattere av denne artikkelen] (2021). Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide. Physical review B (PRB). ISSN 2469-9950. 104. doi: 10.1103/PhysRevB.104.045120. Fulltekst i vitenarkiv
• Woerle, Judith; Bathen, Marianne Etzelmüller; Prokscha, Thomas; Galeckas, Augustinas; Ayedh, Hussein Mohammed Hussein & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2020). Muon Interaction with Negative-U and High-Spin-State Defects: Differentiating Between C and Si Vacancies in 4H-SiC. Physical Review Applied. ISSN 2331-7019. 14. doi: 10.1103/PhysRevApplied.14.054053. Fulltekst i vitenarkiv
• Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2020). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Physical review B (PRB). ISSN 2469-9950. 102(18). doi: 10.1103/PhysRevB.102.184111. Fulltekst i vitenarkiv Vis sammendrag

  The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photoluminescence spectroscopy. A comprehensive model is suggested describing the evolution and interconversion of irradiation-induced point defects during annealing below 1000 ∘C. The model proposes the EH4 and EH5 traps frequently found by DLTS to originate from the (+/0) charge transition level belonging to different configurations of the carbon antisite-carbon vacancy (CAV) complex. Furthermore, we show that the transformation channel between the silicon vacancy (VSi) and CAV is effectively blocked under n-type conditions, but becomes available in samples where the Fermi level has moved towards the center of the band gap due to irradiation-induced donor compensation. The annealing of VSi and the carbon vacancy (VC) is shown to be dominated by recombination with residual self-interstitials at temperatures of up to 400 ∘C. Going to higher temperatures, a decay of the CAV pair density is reported which is closely correlated to a renewed increase of VC concentration. A conceivable explanation for this process is the dissociation of the CAV pair into separate carbon anitisites and VC defects. Lastly, the presented data supports the claim that the removal of free carriers in irradiated SiC is due to introduced compensating defects and not passivation of shallow nitrogen donors.

• Bathen, Marianne Etzelmüller; Vines, Lasse & Coutinho, José (2020). First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC. Journal of Physics: Condensed Matter. ISSN 0953-8984. 33(7). doi: 10.1088/1361-648X/abc804. Fulltekst i vitenarkiv Vis sammendrag

  Point defects in solids are promising single-photon sources with application in quantum sensing, computing and communication. Herein, we describe a theoretical framework for studying electric field effects on defect-related electronic transitions, based on density functional theory calculations with periodic boundary conditions. Sawtooth-shaped electric fields are applied perpendicular to the surface of a two-dimensional defective slab, with induced charge singularities being placed in the vacuum layer. The silicon vacancy (VSi) in 4H-SiC is employed as a benchmark system, having three zero-phonon lines in the near-infrared (V1, V1' and V2) and exhibiting Stark tunability via fabrication of Schottky barrier or p-i-n diodes. In agreement with experimental observations, we find an approximately linear field response for the zero-phonon transitions of VSi involving the decay from the first excited state (named V1 and V2). However, the magnitude of the Stark shifts are overestimated by nearly a factor of 10 when comparing to experimental findings. We discuss several theoretical and experimental aspects which could affect the agreement.

• Vasquez, Geraldo Cristian; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Bazioti, Kalliopi; Johansen, Klaus Magnus H & Maestre, D. [Vis alle 11 forfattere av denne artikkelen] (2020). Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles. Nano Letters. ISSN 1530-6984. 20(12), s. 8689–8695. doi: 10.1021/acs.nanolett.0c03472. Fulltekst i vitenarkiv
• Reinertsen, Vilde Mari; Weiser, Philip Michael; Frodason, Ymir Kalmann; Bathen, Marianne Etzelmüller; Vines, Lasse & Johansen, Klaus Magnus H (2020). Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals. Applied Physics Letters. ISSN 0003-6951. 117. doi: 10.1063/5.0027333. Fulltekst i vitenarkiv
• Bathen, Marianne Etzelmüller; Linnarsson, Margareta; Ghezellou, Mizagh; Ul Hassan, Jawad & Vines, Lasse (2020). Influence of Carbon Cap on Self-Diffusion in Silicon Carbide. Crystals. ISSN 2073-4352. 10(9). doi: 10.3390/cryst10090752. Fulltekst i vitenarkiv Vis sammendrag

  Self-diffusion of carbon (12C and 13C) and silicon (28Si and 30Si) in 4H silicon carbide has been investigated by utilizing a structure containing an isotope purified 4H-28Si12C epitaxial layer grown on an n-type (0001) 4H-SiC substrate, and finally covered by a carbon capping layer (C-cap). The 13C and 30Si isotope profiles were monitored using secondary ion mass spectrometry (SIMS) following successive heat treatments performed at 2300−−2450∘C in Ar atmosphere using an inductively heated furnace. The 30Si profiles show little redistribution within the studied temperature range, with the extracted diffusion lengths for Si being within the error bar for surface roughening during annealing, as determined by profilometer measurements. On the other hand, a significant diffusion of 13C was observed into the isotope purified layer from both the substrate and the C-cap. A diffusivity of D=8.3×106e−10.4/kBT cm2/s for 13C was extracted, in contrast to previous findings that yielded lower both pre-factors and activation energies for C self-diffusion in SiC. The discrepancy between the present measurements and previous theoretical and experimental works is ascribed to the presence of the C-cap, which is responsible for continuous injection of C interstitials during annealing, and thereby suppressing the vacancy mediated diffusion.

• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Coutinho, José & Vines, Lasse (2020). Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 127(8). doi: 10.1063/1.5140659. Fulltekst i vitenarkiv Vis sammendrag

  The silicon vacancy (VSi) in 4H-SiC is a room temperature single-photon emitter with a controllable high-spin ground state and is a promising candidate for future quantum technologies. However, controlled defect formation remains a challenge, and, recently, it was shown that common formation methods such as proton irradiation may, in fact, lower the intensity of photoluminescence (PL) emission from VSi as compared to other ion species. Herein, we combine hybrid density functional calculations and PL studies of the proton-irradiated n-type 4H-SiC material to explore the energetics and stability of hydrogen-related defects, situated both interstitially and in defect complexes with VSi, and confirm the stability of hydrogen in different interstitial and substitutional configurations. Indeed, VSi-H is energetically favorable if VSi is already present in the material, e.g., following irradiation or ion implantation. We demonstrate that hydrogen has a significant impact on electrical and optical properties of VSi, by altering the charge states suitable for quantum technology applications, and provide an estimate for the shift in thermodynamic transition levels. Furthermore, by correlating the theoretical predictions with PL measurements of 4H-SiC samples irradiated by protons at high (400 C) and room temperatures, we associate the observed quenching of VSi emission in the case of high-temperature and high-fluence proton irradiation with the increased mobility of Hi, which may initiate VSi-H complex formation at temperatures above 400 C. The important implication of hydrogen being present is that it obstructs the formation of reliable and efficient single-photon emitters based on silicon vacancy defects in 4H-SiC.

• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, José [Vis alle 8 forfattere av denne artikkelen] (2019). Electrical charge state identification and control for the silicon vacancy in 4H-SiC. npj Quantum Information. ISSN 2056-6387. 5(1), s. 1–9. doi: 10.1038/s41534-019-0227-y. Fulltekst i vitenarkiv
• Bathen, Marianne Etzelmüller; Coutinho, José; Ayedh, Hussein Mohammed Hussein; Hassan, Jawad U; Farkas, Ildiko & Öberg, Sven [Vis alle 9 forfattere av denne artikkelen] (2019). Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment. Physical review B (PRB). ISSN 2469-9950. 100(1), s. 014103-1–014103-15. doi: 10.1103/PhysRevB.100.014103. Fulltekst i vitenarkiv
• Ayedh, Hussein Mohammed Hussein; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Hassan, Jawad U; Bergman, J. P. & Nipoti, Roberta [Vis alle 8 forfattere av denne artikkelen] (2018). Controlling the carbon vacancy in 4H-SiC by thermal processing. ECS Transactions. ISSN 1938-5862. 86(12), s. 91–97. doi: 10.1149/08612.0091ecst.
• Bathen, Marianne Etzelmüller; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Farkas, Ildiko; Janzen, Erik & Svensson, Bengt Gunnar (2018). Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiC. Materials Science Forum. ISSN 0255-5476. 924, s. 200–203. doi: 10.4028/www.scientific.net/MSF.924.200.
• Bathen, Marianne Etzelmüller & Linder, Jacob (2017). Spin Seebeck effect and thermoelectric phenomena in superconducting hybrids with magnetic textures or spin-orbit coupling. Scientific Reports. ISSN 2045-2322. 7, s. 1–13. doi: 10.1038/srep41409. Fulltekst i vitenarkiv
• Linder, Jacob & Bathen, Marianne Etzelmüller (2016). Spin caloritronics with superconductors: Enhanced thermoelectric effects, generalized Onsager response-matrix, and thermal spin currents. Physical Review B. Condensed Matter and Materials Physics. ISSN 1098-0121. 93(22). doi: 10.1103/PhysRevB.93.224509. Fulltekst i vitenarkiv

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• Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2021). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
• Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Enga, Marius & Vines, Lasse (2021). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
• Bathen, Marianne Etzelmüller (2021). Paneldeltager på radioprogrammet Abels Tårn. [Radio]. NRK P2. Vis sammendrag

  Hvorfor blir Creme Fraichen flytende når man rører i den? • Kan man bygge luftskip med vakuum med nye supersterke materialer? • Er det bedre for de snille bakteriene å vaske med eddik? • Alt du (ikke) vil vite om harskt fett • Finnes det materialer som kan stoppe et magnetfelt? • Skal man pusse tenna før eller etter frokost? • Brød fra brødskjæreren: plastpose først, så originalemballasje, eller motsatt? Panelet: Nanoteknolog Marianne Etzelmüller Bathen Kjemiker Einar Uggerud Mikrobiolog Jessica Lönn-Stensrud

• Bathen, Marianne Etzelmüller (2020). Deltagelse i panelet til Radioprogrammet Abels Tårn. [Radio]. NRK P2. Vis sammendrag

  Det sies at veps og bier skilte lag og blei til ulike arter da den ene blei kjøtteter og den andre vegetarianer. Kan det samme skje med mennesket? • Kosthold og artsdannelse. Kikertspisere vs kotelettspisere. • Siste nytt fra usynlighetskappefronten • Succusjonens rolle i homøopatien • Hvordan kommer meitemark seg til fjerne øyer? • Er slikkepottrester i maten farlig? • En kortstokk og tilfeldigheter • Hvordan klarte bisonen å ikke bli utrydda? • Tredemølle med stigning vs. løping i ekte motbakke I panelet Nanoteknolog Marianne Etzelmüller Bathen Kjemiker Ole Zwang Paleontolog Lene Liebe Delsett

• Bathen, Marianne Etzelmüller & Olsen, Vegard Skiftestad (2020). Foredrag for FA-studenter om halvlederfysikk.
• Bathen, Marianne Etzelmüller & Olsen, Vegard Skiftestad (2020). Foredrag for MENA-studenter om halvlederfysikk .
• Bathen, Marianne Etzelmüller (2020). Deltagelse på Abels Tårn, NRK P2. [Radio]. NRK P2.
• Bathen, Marianne Etzelmüller (2019). The future of quantum computing: Beyond the superconducting paradigm.
• Bathen, Marianne Etzelmüller (2019). Intervju av TV2 Nyhetskanalen, kl 0710, om kvantedatamaskiner. [TV]. TV2 Nyhetskanalen.
• Bathen, Marianne Etzelmüller & Jemterud, Torkild (2019). Abels Tårn. [Radio]. NRK P2.
• Bathen, Marianne Etzelmüller & Jemterud, Torkild (2019). Abels tårn . [Radio]. NRK P2.
• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, J [Vis alle 7 forfattere av denne artikkelen] (2019). Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-SiC.
• Bathen, Marianne Etzelmüller (2019). Kvantedatamaskiner - prinsipp, funksjon, og hvordan de nokså enkelt kan lages på labben.
• Bathen, Marianne Etzelmüller & Olsen, Vegard Skiftestad (2019). Omvisning for FA og ELITE.
• Bathen, Marianne Etzelmüller & Caroline, Enge (2019). Norske studenter lager spill til «den neste store teknologien»: Kvantedatamaskinen. [Avis]. Aftenposten. Vis sammendrag

  Vemund Falch og Christian Johnsens sommerjobb er å lage et pokerspill som kan brukes på en kvantedatamaskin. I verden foregår et kappløp for å forstå hva annet maskinene kan brukes til.

• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, José [Vis alle 8 forfattere av denne artikkelen] (2019). Electrical charge-state identification and emission intensity modulation of the silicon vacancy in 4H-SiC.
• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, José [Vis alle 7 forfattere av denne artikkelen] (2019). Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-Si. Vis sammendrag

  The high-spin ground state and bright single-photon emission of the silicon vacancy (VSi) in 4H-SiC offer exciting possibilities for quantum technology and spintronics applications, especially as both are available at room temperature [1,2]. However, quantum compatibility only exists for the singly negative VSi, and single-photon counts are still too low to realize efficient spin-photon interfaces without resorting to complex nanofabrication methods [3]. Herein, we demonstrate enhanced optical emission from VSi using Schottky barrier diode (SBD) formation, and attribute our findings to increased occupancies of VSi-1.

• Bathen, Marianne Etzelmüller & Vines, Lasse (2019). Point defects in semiconductors for quantum technology: Example of silicon vacancy in silicon carbide.
• Bathen, Marianne Etzelmüller (2019). Abels Tårn. [Radio]. NRK P2. Vis sammendrag

  Nå står kampen om gruveavfall i Repparfjorden. Men gruven skal produsere både kobber og sølv som brukes i solceller. Er det egentlig bærekraftig å skulle produsere nok solceller til å erstatte all verdens fosile energikilder? - Hvis man tar stikling av en stikling av en stikling etc - er det da samme plante 1000 år seinere? - Noen sier det går strøm i telefonladere som står i, gjør det det? - Er egentlig solceller bærekraftig - når man ser på metallene som brukes for å lage dem? - Hvorfor står det Aloe barbadensis på innholdsfortegnelsen på Aloe vera produkter? - Hvordan kan en qbit være både 0 og 1 på en gang? I panelet: Botaniker Charlotte Sletten Bjorå Elektroingeniør Sverre Holm Kvantefysiker/nanoteknolog Marianne Etzelmüller Bathen

• Bathen, Marianne Etzelmüller (2019). Kvantedatamaskiner - prinsipp, funksjon, og hvordan de nokså enkelt kan lages på labben.
• Bathen, Marianne Etzelmüller; Borgersen, Jon Arthur; Karlsen, Kjetil; Nyborg, Martin; Olsen, Vegard Skiftestad & Reinertsen, Vilde Mari [Vis alle 7 forfattere av denne artikkelen] (2019). Skolebesøk ved MiNaLab.
• Bathen, Marianne Etzelmüller & Vogt, Yngve (2018). Jakter på fremtidens IT-revolusjon. [Tidsskrift]. Teknisk ukeblad.
• Ayedh, Hussein Mohammed Hussein; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Ul Hassan, Jawad; Bergman, J. P. & Nipoti, Roberta [Vis alle 8 forfattere av denne artikkelen] (2018). Controlling the Carbon Vacancy in 4H-SiC By Thermal Processing.
• Bathen, Marianne Etzelmüller & Vogt, Yngve (2018). Defekte materialer kan brukes til kvantedatamaskiner. [Tidsskrift]. Apollon. Vis sammendrag

  Forskere legger nå grunnlaget for fremtidens kvantedatamaskiner ved å skyte vekk atomer.

• Bathen, Marianne Etzelmüller (2018). Hvordan kan vi lage fremtidens datamaskiner? .
• Coutinho, José; Gouveia, J. D.; Demmouche, K.; Bathen, Marianne Etzelmüller & Svensson, Bengt Gunnar (2018). Carbon vacancies and interstitials in 3C- and 4H-SiC: theoretical milestones and challenges.
• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Frodason, Ymir Kalmann; Vines, Lasse & Svensson, Bengt Gunnar (2018). Tuning silicon vacancy formation in 4H-SiC via proton irradiation for quantum technology.
• Bathen, Marianne Etzelmüller; Vines, Lasse; Galeckas, Augustinas; Frodason, Ymir Kalmann & Svensson, Bengt Gunnar (2018). Correlating charge state transitions of the Si vacancy to the S1/S2 peaks in DLTS spectra of n-type 4H-SiC.
• Bathen, Marianne Etzelmüller; Vines, Lasse; Galeckas, Augustinas; Frodason, Ymir Kalmann & Svensson, Bengt Gunnar (2018). Charge state transitions of the silicon vacancy in 4H-SiC: Combined DLTS, PL and DFT study.
• Bathen, Marianne Etzelmüller; Ingebrigtsen, Mads Eide; Olsen, Vegard Skiftestad; Rønning, Vegard & Vines, Lasse (2018). Omvisning for studieprogrammene FA og ELITE .
• Bathen, Marianne Etzelmüller; Vines, Lasse & Riise, Heine Nygard (2018). Ina tar valget: halvlederfysikk. Vis sammendrag

  Informasjonsvideo om pågående forskningsprosjekter og muligheter for å ta mastergrad ved gruppe for halvlederfysikk (LENS) ved Universitetet i Oslo (UiO). Bidraget ble publisert som en del av serien Ina tar valget på Snapchat-kanalen til fysisk institutt ved UiO.

• Monakhov, Edouard; Bathen, Marianne Etzelmüller; Bergum, Kristin; Sky, Thomas Neset & Weiser, Philip Michael (2017). Omvisning for the National Natural Science Foundation of China.
• Bathen, Marianne Etzelmüller; Borgersen, Jon Arthur; Grini, Sigbjørn; Johansen, Klaus Magnus H; Nyborg, Martin & Olsen, Vegard Skiftestad [Vis alle 7 forfattere av denne artikkelen] (2017). Omvisning FAM.
• Bathen, Marianne Etzelmüller; Bergum, Kristin; Ellingsen, Josef Gert Åsheim; Grini, Sigbjørn; Sky, Thomas Neset & Aarseth, Bjørn Brevig (2017). Omvisning for Arendal VGS.
• Riise, Heine Nygard; Bathen, Marianne Etzelmüller; Borgersen, Jon Arthur; Grini, Sigbjørn & Johansen, Klaus Magnus H (2017). Besøk frå Nanoskolen 2017.
• Riise, Heine Nygard; Bathen, Marianne Etzelmüller; Grini, Sigbjørn; Olsen, Vegard Skiftestad & Sky, Thomas Neset (2017). Omvisning MENA.
• Bathen, Marianne Etzelmüller; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Farkas, Ildiko; Janzen, Erik & Svensson, Bengt Gunnar (2017). Diffusion of the Carbon Vacancy in a-cut and c-cut n-type 4H-SiC.
• Enga, Marius Johan; Vines, Lasse & Bathen, Marianne Etzelmüller (2021). Exploring Defects in Silicon Carbide for Quantum Technologies; A Density Functional Theory Study. Universitetet i Oslo, Det matematisk-naturvitenskapelige fakultet.
• Selnesaunet, Gard Momrak; Vines, Lasse & Bathen, Marianne Etzelmüller (2021). Nanostructuring of SiC for novel defect-based quantum technologies. Universitetet i Oslo, Det matematisk-naturvitenskapelige fakultet. Vis sammendrag

  Point defects in semiconductors have emerged as viable candidates for quantumbased technologies such as quantum computing, communication, and sensing. The present work is related to quantum compatible point defects in silicon carbide (SiC), particularly the silicon vacancy, a point defect and material system that has received considerable research interest in the last few years. In this thesis, a fabrication process was developed for producing structures in SiC that can be used as, e.g., waveguides for single-photon emission. This was performed by depositing a SiO2 layer with plasma chemical vapor deposition (PECVD) on a high purity 4H-SiC wafer. Next, with photolithography, the SiO2 layer was patterned with a photoresist mask in a reactive ion etching (RIE) step. The patterned SiO2 layer was then used as a hard mask for a subsequent RIE step, finalizing the photonic device. A thin nickel layer was deposited on the structures with physical vapor deposition (PVD) for the charge-state control through a liftoff process with a photoresist mask. Defect creation was achieved by 21 keV He implantation to a fluence of 1×1011 cm−2 with an ion implanter. In a scanning electron microscope (SEM), the device morphology showed sharply defined features with almost vertical sidewalls. The diffraction limit from the photolithography resulted in increasingly tilted sidewalls as the structures decreased in size. The optical properties were characterized with cathodoluminescence (CL) spectroscopy and exhibited emission in the V1 and V1’ zero-phonon lines (ZPLs) associated with the VSi. Charge-state control of the VSi was identified by enhancing the V− Si CL emission intensity in the depletion region of the Schottky contact, with a reduction in intensity towards the depletion region edge. By utilizing angle-resolved cathodoluminescence (ARCL) spectroscopy, the radiation profiles of the photonic structures were shown to be altered compared to the Lambertian radiation profile of the implanted wafer. Though no electromagnetic wave propagation in discrete modes (waveguiding effect) was observed, the photonic devices enhanced the emission intensity of the VSi in all directions by functioning as a lens with a higher numerical aperture than the wafer, and the lens had characteristics similar to a combination of a solid immersion lens (SIL) and an optical fiber. The findings presented herein are important for further photonic device fabrication in 4H-SiC, and lay the groundwork for incorporating quantum compatible point defects in electrically driven quantum technology devices.

• Bathen, Marianne Etzelmüller (2020). Point Defects in silicon carbide for quantum technologies: Identification, tuning and control . det matematisk naturvitenskapelige fakultet.

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