Chidanand Bhoodoo

Image of Chidanand Bhoodoo
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Mobile phone +4741326909 +47-41326909, Office : +47-22840942
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Visiting address Sem Sælands vei 26 Kjemibygningen 0371 OSLO
Postal address Postboks 1126 Blindern 0318 OSLO

Academic Interests

Nanoelectronics, Physics, Semiconductors, Nanotechnology

Higher education and employment history

Sept 2009 – June 2011 - Master of Science in Engineering and Technology - Electronics and Microelectronics, Specialization: Micro- and Nanoelectronics, from Saint-Petersburg State Polytechnical University, Russia.

Project title: Optical Properties and Electron Spin Resonance (ESR) of Nano- and Micro- Diamonds, Sintered at High Pressures and Temperatures.

Sept 2009 – July 2011 - Laboratory assistant at Ioffe Physico-Technical Institute of the Russian Academy of Sciences.

Sept 2005 – June 2009 - Bachelor of Science in Engineering and Technology - Electronics and Microelectronics from Saint-Petersburg State Polytechnical University, Russia.

Project title: Photosensitivity of PbS colloidal quantum dots films on silicon wafers.

Sept 2004 – June 2005 - Diploma in Russian language from Saint-Petersburg State Polytechnical University, Institute of International Educational Programs, Russia.

Jan 1997 – Feb 2004 - O – Level and A – Level Cambridge Certificates with Physics, Mathematics, Chemistry and Biology as main subjects,
from Sir Leckraz Teelock Form Six College, Mauritius.

 

Tags: Semiconductors, SMN, DLTS

Publications

 

 

Conference

July 4-8, 2011 - Presentation on “ODMR studies of fluorescent nitrogen-vacancy defects fabricated by sintering of detonation nanodiamonds” to Joint International Conference, Advanced Carbon Nanostructures ACN'2011. http://www.ioffe.ru/ACN2011/2011/abstr/acn11_p199.pdf

July 6, 2011 - Poster presentation on “EPR and optical diagnostics of nanodiamonds” to International school for young scientists "Carbon Nanostructures Diagnostics". http://www.ioffe.ru/ACN2011/2011/abstr/acn11_p371.pdf

Oct 2008 - Presentation on “Voltage Characteristics of PbS Colloidal Quantum Dots Films on Silicon Wafers” at 10th National Youth Conference on Physics of semiconductors and nanostructures, opto-and nanoelectronics.

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  • Arcadipane, E; Sanz, R; Amiard, G; Boninelli, S; Impellizzeri, G; Privitera, V; Bonkerud, Julie; Bhoodoo, Chidanand; Vines, Lasse; Svensson, Bengt Gunnar & Romano, L (2017). Correction: Single-crystal TiO<sub>2</sub> nanowires by seed assisted thermal oxidation of Ti foil: synthesis and photocatalytic properties (RSC Adv. (2016) 6 (55490-55498) DOI: 10.1039/C6RA09088E. RSC Advances.  ISSN 2046-2069.  7(19), s 11222 . doi: 10.1039/c7ra90019h
  • Hupfer, Alexander; Bhoodoo, Chidanand; Vines, Lasse & Svensson, Bengt Gunnar (2017). Formation and Evolution of E3 centers in Hydrothermally grown Zinc Oxide.
  • Bhoodoo, Chidanand; Hupfer, Alexander; Vines, Lasse; Monakhov, Edouard & Svensson, Bengt Gunnar (2016). Evolution Kinetics of Elementary Point Defects in ZnO Implanted with Low Fluences of Helium at Cryogenic Temperature.
  • Hupfer, Alexander; Bhoodoo, Chidanand; Persson, Clas; Vines, Lasse & Svensson, Bengt Gunnar (2016). Formation and evolution of E3 centers in hydrothermally grown zinc oxide.
  • Hupfer, Alexander; Bhoodoo, Chidanand; Vines, Lasse & Svensson, Bengt Gunnar (2016). Formation and annihilation of E4 centers in ZnO: influence of hydrogen.
  • Bhoodoo, Chidanand; Hupfer, Alexander; Vines, Lasse; Monakhov, Edouard & Svensson, Bengt Gunnar (2014). Formation kinetics of a deep acceptor-like level in helium-implanted ZnO.
  • Bhoodoo, Chidanand; Vines, Lasse; Monakhov, Edouard & Svensson, Bengt Gunnar (2014). Annealing Kinetics of The Single Vacancy in Silicon studied By Low Temperature Irradiation And Deep Level Transient Spectroscopy.
  • Bhoodoo, Chidanand; Vines, Lasse; Monakhov, Edouard & Svensson, Bengt Gunnar (2013). Dopant concentration dependence of local compensation in low-dose ion-bombarded Silicon.
  • Bhoodoo, Chidanand; Vines, Lasse; Monakhov, Edouard & Svensson, Bengt Gunnar (2013). Dopant concentration dependence of local compensation in low-dose ion-bombarded n-type Silicon.

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Published June 21, 2012 12:08 PM - Last modified Nov. 26, 2012 11:28 AM