Ioana Pintilie

• Pintilie, Ioana; Grossner, Ulrike; Svensson, Bengt Gunnar; Irmscher, K & Thomas, B (2007). Influence of growth conditions on irradiation induced defects in low doped 4H-SiC epitaxial layers. Applied Physics Letters. ISSN 0003-6951. 90. doi: 10.1063/1.2472173.
• Avice, Marc Jean Lucien; Grossner, Ulrike; Pintilie, Ioana; Svensson, Bengt Gunnar; Servidori, M & Nipoti, R [Show all 8 contributors for this article] (2007). Electrical properties of Al2O3/4H-SiC structures grown by atomic layer chemical vapor deposition. Journal of Applied Physics. ISSN 0021-8979. 102. doi: 10.1063/1.2778289.
• Pintilie, Ioana; Irmscher, Klaus; Grossner, Ulrike; Svensson, Bengt Gunnar & Thomas, Bernd (2007). Influence of growth conditions on irradiation-induced defects in 4H-SiC. Materials Science Forum. ISSN 0255-5476. 556-557, p. 461–464.
• Avice, Marc Jean Lucien; Grossner, Ulrike; Pintilie, Ioana; Nilsen, Ola; Fjellvåg, Helmer & Svensson, Bengt Gunnar (2006). Comparison of near-interface traps in Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC structures. Applied Physics Letters. ISSN 0003-6951. 89.
• Moll, M; Adey, J; Al-Ajili, A; Alfieri, Giovanni; Allport, PP & Artuso, M [Show all 251 contributors for this article] (2005). Development of radiation tolerant semiconductor detectors for the Super-LHC. Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment. ISSN 0168-9002. 546, p. 99–107.
• Bruzzi, M; Adey, J; Al-Ajili, A; Alexandrov, P; Alfieri, Giovanni & Allport, PP [Show all 285 contributors for this article] (2005). Radiation-hard semiconductor detectors for SuperLHC. Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment. ISSN 0168-9002. 541.

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• Løvlie, Lars Sundnes; Pintilie, Ioana; Chinnasamy Palanisamy, Suresh Kumar; Grossner, Ulrike; Svensson, Bengt Gunnar & Beljakowa, Svetlana [Show all 8 contributors for this article] (2008). Interface states in 4H- and 6H-SiC MOS capacitors: a comparative study between conductance spectroscopy and thermal dielectric relaxation current technique.

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