jeyanthn

• Kasi, Vinoth Kumar; Andronic, Luminita; Baba, Elbruz Murat; Deribew, Dargie; Mayandi, Jeyanthinath & Moons, Ellen [Show all 7 contributors for this article] (2023). Experimental and Theoretical Investigation of Gadolinium Oxyhydride (GdHO) Thin Films: Optical, Photocatalytic, and Electronic Properties. Nanomaterials. ISSN 2079-4991. 13(24). doi: 10.3390/nano13243093. Full text in Research Archive
• Kaźmierczak-Bałata, Anna; Bodzenta, Jerzy; Dehbashi, Mohsen; Mayandi, Jeyanthinath & Venkatachalapathy, Vishnukanthan (2023). Influence of Post Processing on Thermal Conductivity of ITO Thin Films. Materials. ISSN 1996-1944. 16(1). doi: 10.3390/ma16010362. Full text in Research Archive
• Mahalakshmi, S.; Mayandi, Jeyanthinath; Sagadevan, Suresh; Ragavendran, V.; Manikandan, K. & Arumugam, S. [Show all 8 contributors for this article] (2023). Enriched second-harmonic generation in meta-phase barium titanate nanostructures synthesized by sol-gel hydrothermal method. Journal of Alloys and Compounds. ISSN 0925-8388. 936. doi: 10.1016/j.jallcom.2022.168171.
• Venkatesan, Ragavendran; Sheik Kadar Maideen, Sheik Moideen Thaha; Chandhiran, Saravanan; Kushvaha, Sunil Singh; Sagadevan, Suresh & Venkatachalapathy, Vishnukanthan [Show all 7 contributors for this article] (2022). Fabrication and Characterization of Si/PEDOT: PSS-Based Heterojunction Solar Cells. Electronics. ISSN 2079-9292. 11(24). doi: 10.3390/electronics11244145. Full text in Research Archive
• Davis, Nithya; R, Althaf; Muraleedharan, Sreepriya; Thiruvenkatam, Vijayaraghavan; Mayandi, Jeyanthinath & Finstad, Terje Gunnar [Show all 9 contributors for this article] (2022). Grain boundary engineered, multilayer graphene incorporated LaCoO<inf>3</inf> composites with enhanced thermoelectric properties. Ceramics International. ISSN 0272-8842. 48(17), p. 24454–24461. doi: 10.1016/j.ceramint.2022.05.054.
• Abel Noelson, Noelson; Anandkumar, M.; Marikkannan, M.; Ragavendran, V.; Thøgersen, Annett & Sagadevan, Suresh [Show all 8 contributors for this article] (2022). Excellent photocatalytic activity of Ag<inf>2</inf>O loaded ZnO/NiO nanocomposites in sun-light and their biological applications. Chemical Physics Letters. ISSN 0009-2614. 796, p. 1–9. doi: 10.1016/j.cplett.2022.139566. Show summary

  In this paper, Ag2O decorated ZnO and NiO-based nanocomposites have been successfully synthesized through a simple chemical method. The prepared samples are characterized using different techniques to approve the chemical structure, elemental composition, morphology, and optical properties. In addition, the photocatalytic activity towards the degradation of methylene blue (MB) in an aqueous solution under sunlight irradiation has been investigated. The observed results indicated the heterostructures of ZnO/Ag2O have significantly higher activity than the bare ZnO and Ag2O nanoparticles under visible light irradiation. The photocatalytic degradation of MB by the ZnO/Ag2O sample has occurred within 50 min compared to other higher-cost methods in the literature. ZnO/NiO nanocomposite has also been shown to be an effective antibacterial agent against Gram-positive bacteria Bacillus cereus and Gram-negative bacteria Salmonella typhi and Klebsiella sp.

• Mayandi, Jeyanthinath; Finstad, Terje Gunnar; Dahl, Øystein; Ponniah, Vajeeston; Schrade, Matthias & Løvvik, Ole Martin [Show all 8 contributors for this article] (2022). Thin films made by reactive sputtering of high entropy alloy FeCoNiCuGe: Optical, electrical and structural properties. Thin Solid Films. ISSN 0040-6090. 744(139083). doi: 10.1016/j.tsf.2022.139083. Full text in Research Archive
• Mayandi, Jeyanthinath; Schrade, Matthias; Ponniah, Vajeeston; Stange, Marit Synnøve Sæverud; Lind, Anna Maria & Sunding, Martin Fleissner [Show all 13 contributors for this article] (2022). High entropy alloy CrFeNiCoCu sputter deposited films: Structure, electrical properties, and oxidation. Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. ISSN 0734-2101. 40. doi: 10.1116/6.0001394. Full text in Research Archive Show summary

  High entropy alloy (HEA) films of CrFeCoNiCu were deposited by sputtering. Their structure was characterized and their electric transport properties were studied by temperature-dependent Hall and Seebeck measurements. The HEA films show a solid solution with an fcc structure. The residual electrical resistivity of the films is around 130 μΩ cm, which is higher than the Mott limit for a metal while the temperature dependence of the resistivity above 30 K is metal-like but with a small temperature coefficient of resistivity (2 ppm/K). The dominant scattering mechanism of charge carriers is alloy scattering due to chemical disorder in the HEA. The Hall coefficient is positive while the Seebeck coefficient is negative. This is interpreted as arising from an electronic structure where the Fermi level passes through band states having both holes and electrons as indicated by band structure calculations. Below 30 K, the conduction is discussed in terms of weak localization and Kondo effects. The HEA structure appears stable for annealing in vacuum, while annealing in an oxygen-containing atmosphere causes the surface to oxidize and grow a Cr-rich oxide on the surface. This is then accompanied by demixing of the HEA solid solution and a decrease in the effective resistance of the film.

• Krishnan, Saravanan Vanal; Ambalam, Muthumanickam Muthukaruppan; Venkatesan, Ragavendran; Mayandi, Jeyanthinath & Venkatachalapathy, Vishnukanthan (2021). Technical review: Improvement of mechanical properties and suitability towards armor applications – Alumina composites. Ceramics International. ISSN 0272-8842. 47(17), p. 23693–23701. doi: 10.1016/j.ceramint.2021.05.146.
• Mayandi, Jeyanthinath; Finstad, Terje Gunnar; Stange, Marit Synnøve Sæverud; Vasquez, Geraldo Cristian; Sunding, Martin Fleissner & Løvvik, Ole Martin [Show all 8 contributors for this article] (2021). Controlling the Electrical Properties of Reactively Sputtered High Entropy Alloy CrFeNiCoCu Films. Journal of Electronic Materials. ISSN 0361-5235. 51, p. 803–812 . doi: 10.1007/s11664-021-09343-3. Full text in Research Archive Show summary

  Oxide-containing films were made by reactively sputtering a high-entropy alloy target of CrFeCoNiCu. We report on a wide range of changes to the electrical properties made by different heat treatments in oxidizing and reducing atmospheres, respectively. We combine temperature-dependent Hall effect measurements down to 10 K to study the transport mechanisms and correlate that with structural measurements by x-ray diffraction and scanning electron microscopy. The measured/effective resistivity could be varied between 1.3 × 10−4 Ω cm and 1.2 × 10−3 Ω cm by post-deposition processing. The temperature coefficient of resistivity could be varied between − 1.2 × 10−3 K−1 through 0 and to + 0.7 × 10−3 K−1. The key to the variation is controlling the morphology and topology of the film. The conduction of charge carriers is dominated by the relative contribution of weak localization and alloy scattering by varying the degree of disorder in the metallic high-entropy alloy and its topology.

• Mayandi, Jeyanthinath; Dias, M.; Stange, Marit Synnøve Sæverud; Lind, Anna Maria; Sunding, M.F. & Cerdeira, A.C. [Show all 12 contributors for this article] (2021). Partial oxidation of high entropy alloys: A route toward nanostructured ferromagnets. Materialia. ISSN 2589-1529. 20. doi: 10.1016/j.mtla.2021.101250. Show summary

  The present work proposes a new approach to the development of nanostructured ferromagnetic composites based on progressive oxidation of high entropy alloys. Sequential ‘subtraction’ of the metals with the lowest oxidation energy destabilizes the remaining solid solution and induces phase separation at the nanoscale. By exploring immiscibility routes in the multidimensional phase diagrams, the strategy can be used to promote intimate contact between mixed oxides and metallic solid solutions with desired magnetic properties. To demonstrate the concept, the relation between oxidation energy, phase separation, and magnetic behavior has been investigated across the (CoCrCuFeNi)Ox composition space, for 0.1≤ x ≤1.3, in materials produced by reactive sputtering. The results point out directions for tuning the composition when aiming for phases with specific magnetic properties arranged in complex microstructures.

• Mayandi, Jeyanthinath; Madathil, Reshma Krishnan; Abinaya, C; Bethke, Kevin; Venkatachalapathy, Vishnukanthan & Rademann, Klaus [Show all 8 contributors for this article] (2021). Al-doped ZnO prepared by co-precipitation method and its thermoelectric characteristics. Materials Letters. ISSN 0167-577X. 288. doi: 10.1016/j.matlet.2021.129352. Show summary

  We report on structural and electrical characterization of zinc oxide material containing aluminum (Al:ZnO) prepared by a co-precipitation technique using different zinc and aluminum precursors. The as-prepared powders were calcinated and pre-annealed at 600 °C and 1200 °C. These were cold-pressed to pellets and sintered at 1000 °C. We also prepared ZnO material with no Al for comparisons. The electrical and thermal conductivity, as well as the Seebeck coefficient, were measured. These properties were correlated with structural analysis by X-ray diffraction characterization and scanning electron microscopy. The process yields a nanostructured material with much reduced thermal conductivity.

• Muthuvel, Ramuvel; Arunachalam, Manimaran; Karanthamalai, Vinayagar; Venkatesan, Ragavendran; Venkatachalapathy, Vishnukanthan & Mayandi, Jeyanthinath (2020). Mechanical, Structural and Optical Properties of the Silicon Nanowire Arrays. Zeitschrift für Physikalische Chemie. ISSN 0942-9352. doi: 10.1515/zpch-2019-1588.
• Chandrasekaran, Abinaya; Bethke, Kevin; Andrei, Virgil; Baumann, Jonas; Pollakowski-Herrmann, Beatrix & Kanngießer, Birgit [Show all 11 contributors for this article] (2020). The effect of post-deposition annealing conditions on structural and thermoelectric properties of sputtered copper oxide films . RSC Advances. ISSN 2046-2069. 10(49), p. 29394–29401. doi: 10.1039/D0RA03906C. Full text in Research Archive
• Mayandi, Jeyanthinath; Finstad, Terje; Venkatesan, Ragavendran; Vajeeston, Ponniah; Karazhanov, Smagul & Venkatachalapathy, Vishnukanthan (2020). Carbon-dioxide as annealing atmosphere to retain the electrical properties of indium-tin oxide. Materials Letters. ISSN 0167-577X. 276. doi: 10.1016/j.matlet.2020.128195. Full text in Research Archive Show summary

  In practical applications of indium-tin-oxide (ITO) annealing at temperatures ~400 °C without degrading its electrical and optical properties is an important challenge. In the present work, commercial Indium-tin oxide (ITO) coated on glass was subjected to post-annealing treatment in the range of 200-400 °C at different annealing atmospheres; oxygen, nitrogen and carbon-dioxide. The annealed samples were characterized by X-ray diffraction, UV-visible spectroscopy and Hall measurements to evaluate the structural, optical and electrical properties. Both oxygen and nitrogen treated samples degrades the structural, optical and conducting properties of ITO, while carbon-dioxide atmosphere inhibits the degradation of ITO at 400 °C. The obtained results suggest that carbon-dioxide can be well utilized as annealing ambient to retain opto-electronic, structural and electrical properties of ITO and thereby improve the efficiency of ITO based solar cells.

• Venkatesan, Ragavendran; Mayandi, Jeyanthinath; Søndenå, Rune; Finstad, Terje & Venkatachalapathy, Vishnukanthan (2020). Investigating antireflection properties of hybrid silicon nanostructures comprising rod-like nanopores and nano-textured surface. Materials Letters. ISSN 0167-577X. 275. doi: 10.1016/j.matlet.2020.128087. Full text in Research Archive Show summary

  In the present work, we have fabricated hybrid silicon (Si) nanostructures comprising vertical rod-like nanopores and nano-textured surface by metal assisted chemical etching (MACE) method at room temperature. The as-received p-type Upgraded Metallurgical grade (UMG) Si wafers were chemical polished, prior to investigating the etching effects at the metal nanoparticle semiconductor interface. The influence of metal silver nanoparticle (AgNPs) concentration on the formation of hybrid nanostructures were studied systematically. Depending on the surface morphology, the hybrid structures exhibited constant 10% average reflectance in the UV–Visible spectral region or average 7.5% reflectance in range of 200–400 nm

• Sabna, M.; Safna, K.; Mayandi, Jeyanthinath; Karazhanov, Smagul & Jayaram, P. (2020). Microstructure profiling and photoluminescence characteristics of V(1-x)2 Ni3xO5-δ compound systems. Materials Letters. ISSN 0167-577X. 266. doi: 10.1016/j.matlet.2020.127507.
• Selvaraj, Mahalakshmi; Venkatesan, Ragavendran; Mayandi, Jeyanthinath & Venkatachalapathy, Vishnukanthan (2019). Misidentification of hexagonal phase as barium carbonate during chemical synthesis of barium titanate nanopowders. Materials Today: Proceedings. ISSN 2214-7853. 23, p. 81–84. doi: 10.1016/j.matpr.2019.06.713.
• Periasamy, Sangeetha; Venkidusamy, Sasirekha; Venkatesan, Ragavendran; Mayandi, Jeyanthinath; Pearce, Joshua & Selj, Josefine Helene [Show all 7 contributors for this article] (2017). Micro-Raman Scattering of Nanoscale Silicon in Amorphous and Porous Silicon. Zeitschrift für Physikalische Chemie. ISSN 0942-9352. 231(9), p. 1585–1598. doi: 10.1515/zpch-2016-0961.
• Prabhu, Muthusamy Ramesh; Mayandi, Jeyanthinath; Mariammal, Rajkumar N.; Venkatachalapathy, Vishnukanthan; Pearce, Joshua M. & Soundararajan, Neelam [Show all 7 contributors for this article] (2015). Peanut shaped ZnO microstructures: Controlled synthesis and nucleation growth toward low-cost dye sensitized solar cells. Materials Research Express. ISSN 2053-1591. 2:066202 (6). doi: 10.1088/2053-1591/2/6/066202.
• Sangari, M.; Umadevi, Mahalingam; Mayandi, Jeyanthinath & Pinheiro, Jean Patrick (2015). Photocatalytic degradation and antimicrobial applications of F-doped MWCNTs/TiO2 composites. Spectrochimica Acta Part A - Molecular and Biomolecular Spectroscopy. ISSN 1386-1425. 139, p. 290–295. doi: 10.1016/j.saa.2014.12.061.
• Sangari, M.; Umadevi, Mahalingam; Mayandi, Jeyanthinath; Anitha, Kandasamy & Pinheiro, Jean Patrick (2015). Photocatalytic and antimicrobial activities of fluorine doped TiO2-carbon nano cones and disc composites. Materials Science in Semiconductor Processing. ISSN 1369-8001. 31, p. 543–550. doi: 10.1016/j.mssp.2014.12.052.
• Mayandi, Jeyanthinath; Finstad, Terje; Foss, Steinar; Galeckas, Augustinas & Stange, Marit Synnøve Sæverud (2014). A comparative study of 1.5 μm photoluminescence from (Er, Si) and (Er, Ge) co-sputtered with Al2O3 on Si. Journal of Alloys and Compounds. ISSN 0925-8388. 590, p. 5–8. doi: 10.1016/j.jallcom.2013.12.060. Show summary

  We present a comparative study of the 1.54lm photoluminescence (PL) from Al2O3:(Er, Si) and Al2O3:(Er, Ge) films co-sputtered on Si substrates using a composite target. The PL yield of Si- and Ge- doped films subjected to different thermal treatment in the range 500–1100 °C is referenced against that of a control Al2O3:(Er) structure. The Er-related emission reaches maximum upon annealing at 700 °C for the Al2O3:(Er, Si) and 500 °C for the Al2O3:(Er, Ge) films, in both cases decreasing at higher annealing tem- peratures. Ge co-doped films are found to be approximately 20 times less luminous than the reference Al2O3:(Er) structure, whereas Si co-doping leads to greatly enhanced emission at 1.54 lm. By adapting energy filtered transmission electron microscopy (EFTEM), the presence of ����2 nm Si nanoclusters was revealed, whereas no indications of Ge clusters or crystals could be observed implying that mere presence of Ge in the Al2O3 matrix can dramatically reduce the luminescence efficiency. We discuss the possible reasons for not forming the Ge nanoclusters in the Al2O3 host and the apparent quenching of the Er- related emission.

• Rein, Margrethe Holmer; Hohmann, M.V.; Thøgersen, Annett; Mayandi, Jeyanthinath; Holt, Arve & Klein, A [Show all 7 contributors for this article] (2013). An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate. Applied Physics Letters. ISSN 0003-6951. 102(2). doi: 10.1063/1.4774404. Show summary

  The interface between indium tin oxide and p-type silicon is studied by in situ X-ray photoelectron spectroscopy (XPS). This is done by performing XPS without breaking vacuum after deposition of ultrathin layers in sequences. Elemental tin and indium are shown to be present at the interface, both after 2 and 10 s of deposition. In addition, the silicon oxide layer at the interface is shown to be composed of mainly silicon suboxides rather than silicon dioxide.

• Tang, Chi Kwong; Lund, Esben; Monakhov, Edouard; Mayandi, Jeyanthinath; Holt, Arve & Svensson, Bengt Gunnar (2011). Electrically active centers introduced in p-type Si by rapid thermal processing. Physica Status Solidi. C, Current topics in solid state physics. ISSN 1610-1634. 8(3), p. 725–728. doi: 10.1002/pssc.201000263.
• Bonsak, Jack; Mayandi, Jeyanthinath; Thøgersen, Annett; Marstein, Erik Stensrud & Mahalingam, Umadevi (2011). Chemical synthesis of silver nanoparticles for solar cell applications. Physica Status Solidi. C, Current topics in solid state physics. ISSN 1610-1634. 8(3), p. 924–927. doi: 10.1002/pssc.201000275. Full text in Research Archive Show summary

  A novel approach to fabricate silver nanoparticles for light trapping applications in silicon based solar cells has been demonstrated. Silver nanoparticles of various sizes have been synthesized by chemical reduction reactions. The particle size in the colloidal solutions was varied by using two different reducing compounds in addition to altering the compositions of the mixtures. In the present work, deposition of the silver nanoparticles onto a conventional bulk silicon solar cell shows an increase in the quantum efficiency at longer wavelengths, indicating the utilization of incident radiation that is normally lost in poor absorbing silicon (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

• Sivabharathy, M; Mayandi, Jeyanthinath; Vines, Lasse; Svensson, Bengt Gunnar & Ramachandran, K (2011). SIMS Study of 30keV H+ Ion-Implanted n-GaAs. Defect and Diffusion Forum. ISSN 1012-0386. 319-320, p. 181–184. doi: 10.4028/www.scientific.net/DDF.319-320.181.
• Thøgersen, Annett; Rein, Margrethe Holmer; Monakhov, Edouard; Mayandi, Jeyanthinath & Diplas, Spyridon (2011). Elemental distribution and oxygen deficiency of magnetron sputtered indium tin oxide films. Journal of Applied Physics. ISSN 0021-8979. 109(11). doi: 10.1063/1.3587174.
• Thøgersen, Annett; Mayandi, Jeyanthinath; Vines, Lasse; Sunding, Martin Fleissner; Olsen, Arne & Diplas, Spyridon [Show all 8 contributors for this article] (2011). Composition and structure of Pd nanoclusters in SiOx thin film. Journal of Applied Physics. ISSN 0021-8979. 109(8). doi: 10.1063/1.3561492. Full text in Research Archive
• Mayandi, Jeyanthinath; Finstad, Terje; Heng, Chenglin; Li, Yanjun; Thøgersen, Annett & Foss, Steinar (2011). A comparison between 1.5µm PL from (Er,Si) and (Er,Ge) co-doped SiO2 films. Microelectronics Journal. ISSN 0959-8324.
• Mayandi, Jeyanthinath; Finstad, Terje; Foss, Steinar; Klette, H & Sagberg, H. (2011). (Ge, Er) co-doped in SiO2 Sputtered Films with and without Voids and their Stability. Journal of nanoparticle research. ISSN 1388-0764. Show summary

  Thin films of SiO2 have been co-doped with Ge and Er during magnetron sputtering. The photo-luminescence (PL) from the samples shows the 1.5 µm Er3+ peak after segregation annealing (600-1000°C) to form Ge nanoclusters. One set of samples was prepared with voids/pores in the film as observed by transmission electron microscopy. The PL yield from these samples showed various kinds of instability, which was monitored over a two years period and compared with samples that did not contain voids. The PL yield varies with storage time for samples that where segregation annealed shortly after film deposition, while the PL is stable for samples stored 6 months before the segregation annealing. The samples were examined by PL, TEM and IR reflectance spectroscopy. The samples with voids have a very high PL yield pr Er atom compared to those without voids (by a factor of 22). The instability is briefly discussed in terms of current research on embedded nanocrystals in oxides.

• Monakhov, Edouard; Syre, Marie Vardenær; Tang, Chi Kwong; Mayandi, Jeyanthinath; Olaisen, Birger Retterstøl & Søndenå, Rune [Show all 7 contributors for this article] (2010). Deep level transient spectroscopy studies of electrically active centers in solar-grade Si. Conference record of the Photovoltaic Specialists Conference. ISSN 0160-8371. p. 3210–3213. doi: 10.1109/PVSC.2010.5616758.
• Karazhanov, Smagul; Nærland, Tine Uberg; Mayandi, Jeyanthinath; Søndenå, Rune & Holt, Arve (2010). Electrical properties of silicon with bistable impurity complexes. Materials Research Society Symposium Proceedings. ISSN 0272-9172. 1210. doi: 10.1557/PROC-1210-Q08-18.
• Thøgersen, Annett; Mayandi, Jeyanthinath; Finstad, Terje; Olsen, Arne; Diplas, Spyros & Mitome, Masanori [Show all 7 contributors for this article] (2009). The formation of Er-oxide nanoclusters in SiO2 thin films with excess Si. Journal of Applied Physics. ISSN 0021-8979. 106(1). doi: 10.1063/1.3148266. Show summary

  Abstract: The nucleation, distribution, and composition of erbium embedded in a SiO2-Si layer were studied with high resolution transmission electron microscopy (TEM), electron energy loss spectroscopy, energy filtered TEM, scanning transmission electron microscopy, and x-ray photoelectron spectroscopy. When SiO2 layer contains small amounts of Si and Er, nanoclusters of Er oxide are formed throughout the whole layer. The exposure of oxide to an electron beam with 1.56x10(6) electrons nm(2) s causes nanocluster growth. Initially this growth matches the Ostwald ripening model, but eventually it stagnates at a constant nanocluster radius of 2.39 nm

• Thøgersen, Annett; Diplas, Spyridon; Mayandi, Jeyanthinath; Finstad, Terje; Olsen, Arne & Watts, JF [Show all 8 contributors for this article] (2008). An experimental study of charge distribution in crystalline and amorphous Si nanoclusters in thin silica films. Journal of Applied Physics. ISSN 0021-8979. 103. doi: 10.1063/1.2832630.
• Thøgersen, Annett; Mayandi, Jeyanthinath; Finstad, Terje; Olsen, Arne; Christensen, Jens S. & Mitome, Masanori [Show all 7 contributors for this article] (2008). Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers. Journal of Applied Physics. ISSN 0021-8979. 104(9). doi: 10.1063/1.3014195.
• Mayandi, Jeyanthinath; Finstad, Terje; Heng, Chenglin; Foss, Steinar & Klette, H (2007). Infrared electroluminescence from a Si MOS structure with Ge in the oxide. Journal of Luminescence. ISSN 0022-2313. 127, p. 362–366. doi: 10.1016/j.jlumin.2007.01.021. Show summary

  We report on room-temperature infrared electroluminescence (EL) from metal-oxide–semiconductor devices made from Si. We compare the luminescence from RF sputtered oxide films containing SiO2 with and without Ge by using a composite target and luminescence from a SiO2 layer made by rapid thermal oxidation. The sputtered films were annealed in the temperature range 600-900 °C. This densifies the films and is likely to reduce the concentration of defects. A luminescence peak located around 1150-1170 nm is observed at current densities as low as 0.1 A/cm2. The corresponding photon energy is close to that of the Si band gap. In addition we observe several broad luminescence bands in the range 1000 to 1750 nm. These bands get stronger with Ge in the SiO2 film. Some of these bands have previously been suggested are directly associated with Ge. Since we observe that the intensity is correlated with the presence of Ge while the mere presence of the bands is not, we discuss the EL bands being due to defects which concentration is influenced by Ge in the oxide.

• Mayandi, Jeyanthinath; Finstad, Terje; Thøgersen, Annett; Foss, Steinar; Serincan, U & Turan, R (2007). Scanning probe measurements on luminescent Si nanoclusters in SiO2 films. Thin Solid Films. ISSN 0040-6090. 515, p. 6375–6380. doi: 10.1016/j.tsf.2006.11.174. Show summary

  Embedded Si nanocrystals in SiO2 have a large current interest due to the prospects for practical applications. For most of these it is essential to characterize and ultimately control the nanocrystal size, size distribution and spatial distribution. Here we present a study of Si nanocrystals and clusters in SiO2 studied by atomic force microscopy (AFM). Since it is an indirect method, it requires several other methods to establish a reliable description of the structure of the samples. We here compare the AFM results with photoluminescence (PL), transmission electron microscopy (TEM). Si nanocrystals in thermal oxide films (~250 nm) where fabricated by 100 keV Si ion implantation at a dose of 1x1017 cm-2 followed by high temperature annealing. The nanocrystal size and distribution was determined by TEM and correlated with AFM micrographs taken after different etching times of the oxide strongly indicating the AFM signatures observed are connected to the nanocrystals. We have analyzed and modeled the etch sectioning technique. Comparison with the experiments let us conclude that the sectioning technique has some memory effect, but yields a distribution of nanocrystals with depth. A dose of 5x1016 cm-2 yields a considerable PL blue shift of about 100 nm relative to the higher dose. No nanocrystals are observed with TEM in this latter case. However distinct signatures can be observed with AFM and is tentatively attributed to the presence of non-crystalline Si-rich nanoclusters. The peak of the PL will be correlated with the size and depth of the clusters.

• Mayandi, Jeyanthinath; Finstad, Terje; Foss, Steinar; Thøgersen, Annett; Serincan, U & Turan, R (2007). Ion beam synthesized lummescent Si nanocrystals embedded in SO2 films and the role of damage on nucleation during annealing. Surface & Coatings Technology. ISSN 0257-8972. 201, p. 8482–8485. doi: 10.1016/j.surfcoat.2006.02.075. Show summary

  Si nanocrystals in thermal oxide films (∼ 250 nm) were fabricated by 100 keV Si ion implantation followed by high temperature annealing. Two different doses were compared after annealing at 1050 °C for 2 h. A sample implanted with a dose of 1 × 1017 cm− 2 shows a broad photo luminescence peak centered around 880 nm after annealing. A dose of 5 × 1016 cm− 2 yields a considerable blue shift of about 100 nm relative to the higher dose as well as a reduction in intensity. Transmission electron microscopy study reveals a difference in the microstructure of the SiO2 films. Nanocrystals are clearly identified in the middle of the film for the highest dose, but not for the lower dose. The difference is discussed in terms of concentration dependent nucleation rate and differences in defect concentration. It is argued that the latter effect has a strong effect on the depth distribution of nanocrystals

• Heng, Chenglin; Li, Yanjun; Mayandi, Jeyanthinath; Finstad, Terje; Jørgensen, Sissel & Gunnæs, Anette Eleonora [Show all 8 contributors for this article] (2006). A study on the precipitation of Ge-rich nanoparticles in a luminescent (Er, Ge) co-doped SiO2 film sputtered with Ar+O2 plasma. International Journal of Nanoscience. ISSN 0219-581X. 5(4-5), p. 493–498. doi: 10.1142/S0219581X06004681. Show summary

  We report the photoluminescence (PL) from an (Er, Ge) co-doped SiO2 film deposited by rf-magnetron sputtering in an Ar + O2 ambience. The sample film was annealed in N2 for 30 min at different temperatures. The PL intensity increases as the annealing temperature increases from 700 to 1000°C, and drops to very weak after 1100°C annealing. High-resolution transmission electron microscopy (TEM) observation shows that there are some Ge-rich nanoparticles precipitated after 700°C annealing, and more clusters precipitated after 1000°C annealing. However, no Ge nanocrystals were found in these films, the diffraction patterns are always halo which indicates that the precipitated clusters are in amorphous states. X-ray photoelectron spectroscopy (XPS) analysis indicates the Ge in the nanoclusters is mostly in an oxidized state and the oxidation state of Er increases with increasing annealing temperature.

• Mayandi, Jeyanthinath; Finstad, Terje; Foss, Steinar; Thøgersen, Annett; Serincan, U & Tuaran, R. (2006). Luminescence from Silicon Nanoparticles in SiO2: Atomic Force Micro-scopy and Transmission Electron Microscopy Studies. Physica scripta. Topical Issues. ISSN 0281-1847. T126, p. 77–80. Show summary

  Si nanocrystals in thermal oxide films (~250 nm) were fabricated by 100 keV Si ion implantation at various doses followed by high temperature annealing. After annealing a sample implanted with a dose of 1x1017 cm-2 at 1050 °C for two hours, a broad photo luminescence peak centered around 880 nm was observed. A dose of 5x1016 cm-2 yields a considerable blue shift of about 100 nm relative to the higher dose as well as a reduction in intensity. Transmission electron microscopy and atomic force microscopy are used to characterize the microstructures in the SiO2 film. The limitations of these techniques for the study of the nanostructures are addressed in this paper and it is suggested that AFM combined with etching can yield a structural spectroscopy with very good sensitivity.

View all works in Cristin

• Mayandi, Jeyanthinath; GOVINDARAJ, Baby Sri Pratha; SOMU, Allwin Rajesh; Venkatesan, Ragavendran; JAMESPANDI, Annaraj & Finstad, Terje Gunnar (2023). Facile Hydrothermal Synthesis and Characterization of Vanadium Pentoxide Hollow Spheres on Activated Carbon Template as an Electrode Material for Hybrid Supercapacitor.
• Finstad, Terje Gunnar; Mayandi, Jeyanthinath & Karlsen, Ole Bjørn (2023). Thermoelectric Multi-pnictogens Semiconductors: Cu Doping of ZnSbAs Alloys.
• Finstad, Terje Gunnar; Mayandi, Jeyanthinath; Soltani, Nayereh; Pokle, Anuj; Løvvik, Ole Martin & Almeida Carvalho, Patricia (2023). TiFe2Si Thin Films.
• Mayandi, Jeyanthinath; Soltani, Nayereh; Finstad, Terje Gunnar; Karlsen, Ole Bjørn & Flage-Larsen, Espen (2022). Zinc Multi-Pnictogens Semiconductors: Cu Doping and Thermoelectric Characteristics.
• Vijayan, Athira; Ragavendran, V.; Mayandi, Jeyanthinath & Karazhanov, Smagul (2021). Analysis of different concentration of TiCl4 treated with TiO2 as photoanode for dye-sensitized solar cell application.
• Almeida Carvalho, Patricia; Mayandi, Jeyanthinath; Rahman, Jamil Ur; Soltani, Nayereh; Schrade, Matthias & Gunnæs, Anette Eleonora [Show all 9 contributors for this article] (2021). Exploring the structure of high entropy oxides, silicides and antimonides for functional applications.
• Mayandi, Jeyanthinath; Finstad, Terje; Stange, Marit Synnøve Sæverud; Vasque, Giovanni; Sunding, Martin Fleissner & Løvvik, Ole Martin [Show all 8 contributors for this article] (2021). Engineering Electrical Properties of Reactively Sputtered High Entropy Alloy CrFeNiCoCu Films. Show summary

  Oxide containing films were deposited by reactive sputtering using a high entropy alloy (HEA) target made of equal concentrations of the five 3d-transion metals: Cr, Fe, Co, Ni, and Cu. We report on controlled alterations to the electrical properties made by post-deposition heat treatments in oxidizing and reducing atmospheres respectively. The temperature coefficient of resistivity of the films could be varied between -1.2×10-3 K-1 through 0 and to +0.7×10-3 K-1, while the measured effective resistivity could be varied between 1.3×10-4 Ωcm and 1.2×10-3 Ωcm by post deposition processing. To study the transport mechanisms, we performed temperature dependent Hall effect measurements down to 10 K. We correlated the electrical behavior with structural measurements by a combination of X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive X-ray spectroscopy (EDS) for elemental mapping at various length scales and secondary ions mass spectroscopy (SIMS). The key to engineering the resistivity is controlling the topology of the film. The topology of the as- deposited thin films can be controlled by the oxygen flow during reactive sputtering as the most important parameter. For zero oxygen flow we have obtained a homogenous HEA film having a FCC structure with the CrFeNiCoCu target. For high oxygen flow we have observed a high entropy oxide with a rock salt crystal structure. Here we report on the case of intermediate flow of oxygen. The as-deposited structure is then complex. There are nano sized regions with oxides and regions with FCC HEA alloys with different compositions of all the 3d-metals but also supersaturated with oxygen. The topology of these regions, and also their concentration, can be altered by post-deposition heat treatment. The transport in the HEA regions are dominated by alloy scattering. The potential in the FCC HEA has disorder due to the random mixing of the elements, which also gives distortion of the individual atom sites. This gives resistivities above the Mott- Ioffe-Regel limit while still having a positive TCR. These disorder effects will be further enhanced by the uptake of oxygen atoms. For these cases one gets weak localization, yielding a negative TCR. The oxides may be insulating but may also conduct by variable range hopping of the Efros–Shklovskii-type or the Mott- type yielding characteristic negative TCR. The post-deposition yields oxide segregation, of for example of spinel type containing Cr. This reduce the entropy and stability of the metal alloy, creating FCC and BCC metal alloys of different compositions. In the case of reducing the heat treatment in a reducing atmosphere, the oxides are reduced. The experimental resistivities are in excellent agreement with the model for the conduction.

• Mayandi, Jeyanthinath; Stange, Marit Synnøve Sæverud; Sagvolden, Espen; Sunding, Martin Fleissner; Dahl, Øystein & Schrade, Matthias [Show all 12 contributors for this article] (2019). Structural and Electrical Properties of Sputtered HEA Thin Films of CrFeCoNiCu and their Oxidation Studies. Show summary

  High-entropy alloys (HEAs) represent a class of materials that is intensively investigated for a range of possible applications. They generally show a high degree of phase stability by the high entropy while the structure is a random atom position disorder unlike other alloys which can influence physical properties differently than regular alloys. In general, there are few studies on oxidation of HEA and studies on adding oxygen during the fabrication of HEA. In this study we have sputtered thin films of CrFeCoNiCu onto insulating and optically transparent substrates in order to measure structural, electrical and optical functional properties. We have varied the oxygen pressure in the sputtering environment as well as oxidizing the samples at elevated temperatures after deposition. Optical and electrical characterization was performed on films sputter deposited on fused quartz wafers. The films were characterized by TEM, XRD and XPS. The films with no intentional oxygen had an FCC structure with a texture showing strong (111) preferred orientation as seen by XRD. TEM analysis showed columnar morphology with twins parallel to (111) planes. Samples sputtered under high oxygen content showed a simple NaCl structure(FeO). The samples were annealed in air and O2 ambient in the temperature range of 300 to 500 °C. This caused an oxide layer growing on top of the FCC structure. XPS was utilized to find the atomic compositions and chemical stated of the elements. Hall measurements and Seebeck measurements were performed on the as prepared and oxidized films from 10 K to 600K. For the FCC structure the resistivity was a factor 104 higher than the elemental metals while can be satisfactory described by electron phonon scattering by the Bloch-Grüneisen description and the low temperature negative temperature effect by the Kondo effect. The sign of the Hall coefficient was positive while the Seebeck coefficient was negative, indicating the Fermi surface containing pockets of electrons and holes and an energy dependent scattering time. A detailed comparison of the as prepared and the oxidized thin films will be discussed in terms of the structural chemical and electrical properties of the grown films. In addition the electric properties will be discussed in terms of a model considering electronic structure and scattering.

• Mayandi, Jeyanthinath; Stange, Marit Synnøve Sæverud; Sunding, Martin Fleissner; Schrade, Matthias; Deuermeier, J. & Fortunato, E. [Show all 10 contributors for this article] (2019). Physical properties of sputtered CrFeCoNiCu thin films on quartz substrate. Show summary

  Equiatomic high entropy alloys (HEA) have attracted considerable interest due to their exceptional properties, which might be closely related to their extreme disorder induced by chemical complexity. We have sputtered thin films of CrFeCoNiCu onto insulating and optically transparent substrates in order to measure electrical and optical functional properties. After several optimizations desired sputtering conditions were obtained for the deposition of CrFeCoNiCu onto fused quartz wafers. All the samples were characterized by structural, chemical and electrical methods. The as prepared films had fcc-type structure. Hall measurements were performed from 10 K to 600K. The resistivity was a factor 104 higher than the elemental metals and the temperature dependence was different. The sign of the Hall coefficient indicates that the film was dominated by holes, while the Seebeck coefficient was negative and dominated by electrons. The electric properties will be discussed in terms of a model considering electronic structure and scattering.

• Mayandi, Jeyanthinath; Stange, Marit Synnøve Sæverud; Dahl, Øystein; Sunding, Martin Fleissner; Sagvolden, Espen & Schrade, Matthias [Show all 12 contributors for this article] (2019). Exploring functional properties of high entropy oxides. Show summary

  The present work explores the concept of high-entropy alloys to design FeCoNi-based oxides suitable for functional applications. Fundamental changes in electronic behaviour produced by metal substitution and variable oxygen content were screened to investigate the potential of these materials for specific applications, such as transparent conductors and thermoelectric materials. Elements with atomic radius similar to the average value expected for FeCoNi have been selected for substitutional replacement: (i) Cr and Cu as relatively abundant commodities with intensive industrial application and (ii) Ge due its semiconductor nature. We have sputtered CrFeCoNiCu and of GeFeCoNiCu thin films onto insulating and optically transparent substrates in order to measure electrical and optical properties. The deposition was done by reactive DC magnetron sputtering from targets with equimolar proportions of the metallic elements using atmospheres ranging from 0 to 20 at.% O2 /Ar. The films where characterized by structural, spectroscopic and electrical methods. Transmission electron microscopy showed that for oxygen content up to 8 at.% the materials adopted an fcc-type structure while the NaCl-structure was found for higher oxygen concentrations. X-ray-photoelectron spectroscopy was used to characterize the oxidation state of the metals. Standard absorption analysis by UV-VIS spectrometry revealed that the films had bandgaps ranging from 0.8 to 2.8 eV. The resistivity measured at RT ranged from 10-4 to values above 104 Ω.cm. Hall measurements and Seebeck measurements indicated that both electrons and holes contribute to conduction and at RT the Hall coefficient and Seebeck coefficients have different sign. This behaviour is discussed in terms of the structural analysis and suggested electronic model of the films. In conclusion, the optical band gap and resistivity of the materials produced span over large ranges demonstrating potential for a variety of functional applications.

• Mayandi, Jeyanthinath; Stange, Marit Synnøve Sæverud; Sagvolden, Espen; Sunding, Martin Fleissner; Dahl, Øystein & Schrade, Matthias [Show all 12 contributors for this article] (2019). Development of sputtered HEA thin films and their functional properties .
• Mayandi, Jeyanthinath; Stange, Marit Synnøve Sæverud; Sunding, Martin Fleissner; Diplas, Spyridon; Almeida Carvalho, Patricia & Finstad, Terje (2019). Oxidation of CrFeCoNiCu sputtered thin films .
• Marstein, Erik Stensrud; Mayandi, Jeyanthinath; Syre, Marie Vardenær; Olaisen, Birger Retterstøl; Vines, Lasse & Holt, Arve (2011). Limitations of P Gettering During Shallow Emitter Formation.
• Tang, Chi Kwong; Lund, Esben; Monakhov, Edouard; Mayandi, Jeyanthinath; Holt, Arve & Svensson, Bengt Gunnar (2010). Electrically active centers introduced in p-type Si by rapid thermal processing.
• Finstad, Terje; Mayandi, Jeyanthinath; Galeckas, Augustinas; Diplas, Spyridon; Petersson, Anna Malou & Balasundaraprabhu, R (2008). Visible luminescence from DC magnetron sputtered ZnO with and without Ge.
• Mayandi, Jeyanthinath; Finstad, Terje; Thøgersen, Annett; Galeckas, Augustinas; Foss, Steinar & Turan, R (2008). Embedded Si nanocrystals in SiO2: atomic force microscope determination of depth vs distribution.
• Mayandi, Jeyanthinath; Finstad, Terje; Heng, Chenglin; Foss, Steinar; Klette, Hallgeir & Li, Yanjun (2007). Photoluminescence at 1.5 μm from Er in an SiO2 layer with Ge nanoclusters: The local environments of Er atoms and comparison with he case of Si nanoclusters.
• Mayandi, Jeyanthinath; Galeckas, Augustinas; Petersson, A. M.; Finstad, Terje; Rangasamy, Balasundara Prabhu & Diplas, Spyridon (2007). Visible luminescence from DC magnetron sputtered ZnO with and without Germanium.
• Mayandi, Jeyanthinath; Finstad, Terje; Heng, Chenglin; Li, Yanjun; Thøgersen, Annett & Foss, Steinar (2006). Comparison of Er PL emission with Si and Ge ncs embedded in SiO2 on a Si substrate. Show summary

  We have studied the 1.5 µm photoluminescence (PL) from Er ions after annealing two different sample sets in the temperature range 500 °C to 1100 °C. The different sample sets were made by magnetron sputtering from composite targets of Si+SiO2+Er and Ge+SiO2+Er respectively for the different sample sets. The annealing induces Si – and Ge-nanoclusters respectively in the different film sets. The PL peak reaches its maximum intensity after annealing at 700 °C for samples with Ge nanoclusters and after annealing at 800 °C for samples with Si. No luminescence from nanoclusters was detected in neither sample sets. This is interpreted as an energy transfer from the nanocluster to Er atoms. Transmission electron microscopy shows that after annealing to the respective temperature yielding the maximum PL intensity both the Ge and Si clusters are non-crystalline. Here we mainly compare the spectral shape of Er luminescence emitted in these different nanostructured matrixes. The PL spectral shapes are clearly different and witness a different local environment for the Er ions.

• Mayandi, Jeyanthinath; Finstad, Terje; Foss, Steinar; Thøgersen, Annett; Turan, R & Serincan, U (2006). SPM approach to investigate luminescent nanoclusters in SiO2 Films.
• Mayandi, Jeyanthinath; Finstad, Terje; Foss, Steinar; Heng, Chenglin & Klette, Hallgeir (2006). Near Infrared Electroluminescence from RF Sputtered SiO2 Films Doped with Ge and Er Ions on Si. Show summary

  Room temperature infrared electroluminescence (EL) from metal-oxide–semiconductor devices on Si substrates will be discussed. Here we compare the luminescence from RF sputtered oxide films containing SiO2 with different amounts of Ge and Er by using a composite target. The films were annealed in the temperature range 600-900 °C. This densifies the films and is likely to reduce the concentration of defects. Ge clusters may also precipitate in the films after annealing. In most cases for the different heat treatments and concentrations a luminescence peak located around 1150-1170 nm is observed. The corresponding photon energy is close to that of the Si band gap. In addition we observe several broad luminescence bands in the 1000-1750 nm. The band near 1330 nm gets stronger with the presence of Ge in the SiO2 film. Some of these bands have previously been suggested are directly associated with Ge. The intensities of all bands are strongest for the as deposited film. The EL band in the 1550 nm region is not correlated with the presence of Er, which suggest that it is due to oxide defects or possibly interface states. The intensity is correlated with Ge concentration. The spectral shape of the EL depends upon the injection level. These dependencies will be presented together with structural analysis of the devices. Finally a comparison with device structures containing Si clusters will also be presented.

• Mayandi, Jeyanthinath; Finstad, Terje; Foss, Steinar; Heng, Chenglin; Klette, Hallgeir & Sagberg, H. (2006). On the Long-term Stability of Sputtered SiO2 Films with Ge-rich Nanoparticles: the Effect of Nanovoids on the Infrared Photo-Luminescence from Er ions. Show summary

  Embedded Ge-rich nanostructures in SiO2 have technological interest and can be prepared in different ways. Here we report on rf-magnetron sputtered films with varying deposition parameters having a large impact on the long-term stability of the physical properties of the films related to the particular microstructure of the films. We observe efficient room temperature infrared photoluminescence (PL) from a (Er, Ge) co-doped SiO2 films where the PL and its intensity is correlated with the microstructure containing Ge-rich nanoclusters. The Er PL is thus a probe of the films microstructure. The films with nanovoids are particularly interesting but are not beneficial for applications as they are correlated with long term instability. We have investigated the microstructure mainly with analytical transmission electron microscopy (TEM) and Fourier transform infrared (FTIR) spectrometry. Samples have been annealed and measured systematically over a one-year period. The effect of annealing has been found to be dependant on the as-deposited structure. The films containing nanovoids show a peculiar dependence of PL intensity upon annealing time at 700 °C; It is observed a maximum after 30 min, then a minimum before the signal rises again. This annealing behaviour is changed by storage over a 6 months period.

• Mayandi, Jeyanthinath; Foss, Steinar; Finstad, Terje; Thøgersen, Annett; Serincan, U & Turan, R. (2006). Scanning Probe Measurements on Luminescent Si Nanoclusters in SiO2 Films.
• Mayandi, Jeyanthinath; Finstad, Terje; Heng, Chenglin; Foss, Steinar & Klette, Hallgeir (2006). Infrared Electroluminescence from a Si MOS Structure with Ge in the Oxide. Show summary

  We report on room-temperature infrared electroluminescence (EL) from metal-oxide–semiconductor devices made from Si. We compare the luminescence from RF sputtered oxide films containing SiO2 with different amounts of Ge by using a composite target. The films were annealed in the temperature range 700-900 °C. This densifies the films and is likely to reduce concentration of defects while in films containing Ge quantum dots are formed. In most cases for the different heat treatments and concentrations a luminescence peak located around 1150-1170 nm is observed. This photon energy is close to that of the Si band gap. In addition we observe several broad luminescence bands in the 1000-1750 nm. These bands get stronger with increasing Ge concentration in the SiO2 film. Some of these bands have previously been suggested are directly associated with Ge. Since we observe the intensity is correlated with the presence of Ge while the mere presence of the bands is not, we rather suggest the EL bands are due to defects which concentration is influenced by the presence of Ge in the oxide. The EL is observed for different bias polarities and different electrode contacts and shows very similar results are obtained in these cases. The spectral shape of the EL depends upon the injection level. These dependencies will be presented together with structural analysis of the device structures.

• Mayandi, Jeyanthinath; Heng, Chenglin; Foss, Steinar; Finstad, Terje & Klette, Hallgeir (2005). Efficient Infrared Photo-Luminescence from sputtered SiO2 films with Ge-rich nanoparticles and Er ions.
• Finstad, Terje; Mayandi, Jeyanthinath; Foss, Steinar; Serincan, U. & Turan, Rasit (2005). Luminescence in ion beam synthesized quantum dots correlated with nanocrystal depth and size distrubutions.
• Finstad, Terje; Heng, Chenglin; Li, Yanjun; Mayandi, Jeyanthinath; Olsen, Arne & Jørgensen, Sissel (2005). Strong luminescence from Er in an environment of Ge nanoclusters in SiO2.
• Heng, Chenglin; Finstad, Terje; Li, Yanjun; Mayandi, Jeyanthinath; Jørgensen, Sissel & Storås, Preben [Show all 8 contributors for this article] (2005). The precipitation of Ge-rich nano particles in an (Er,Ge) co doped SiO2 matrix.
• Mayandi, Jeyanthinath; Finstad, Terje; Foss, Steinar; Thøgersen, Annett; Serincan, U. & Turan, Rasit (2005). Luminesce from ion beam synthesized Si nanocrystals embedded in SiO2 films and the effect of damage on nucleation.
• Mayandi, Jeyanthinath; Finstad, Terje; Foss, Steinar; Serincan, U. & Turan, Rasit (2005). Luminescence from Si nanocrystals in SiO2 films.
• Venkatesan, Ragavendran; Mayandi, Jeyanthinath; Finstad, Terje Gunnar; Venkatachalapathy, Vishnukanthan & Pearce, Joshua (2003). Formation of 2D Hierarchical Si Nanostructure in Upgraded Metallurgical Grade (UMG) Wafers by Metal Assisted Chemical Etching.
• Mayandi, Jeyanthinath; Finstad, Terje & Kuznetsov, Andrej (2007). Embedded semiconductor nanocrystals/nanoclusters in oxides. Unipub forlag. ISSN 1501-7710.

View all works in Cristin