Leonid Murin
Guest researcher
Email
leonid.murin@fys.uio.no
Username
Publications
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Murin, Leonid; Tolkacheva, Ekaterina A; Lastovskii, Stanislau B; Markevich, Vladimir P.; Mullins, Jack & Peaker, Anthony R. [Show all 7 contributors for this article] (2018). Interaction of Radiation‐Induced Self‐Interstitials with Vacancy‐Oxygen Related Defects VnO2 (n from 1 to 3) in Silicon. Physica Status Solidi (a) applications and materials science. ISSN 1862-6300. p. 1–5. doi: 10.1002/pssa.201800609.
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Gusakov, Vasilii E; Lastovskii, Stanislau B; Murin, Leonid; Tolkacheva, Ekaterina A; Khirunenko, Lyudmila I & Sosnin, Mikhail G [Show all 14 contributors for this article] (2017). The di-interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms. Physica Status Solidi (a) applications and materials science. ISSN 1862-6300. 214(7). doi: 10.1002/pssa.201700261.
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Quemener, Vincent; Raeissi, Bahman; Herklotz, Frank; Murin, Leonid; Monakhov, Edouard & Svensson, Bengt Gunnar (2015). Kinetics study of the evolution of oxygen-related defects in mono-crystalline silicon subjected to electron-irradiation and thermal treatment. Journal of Applied Physics. ISSN 0021-8979. 118(13). doi: 10.1063/1.4932019.
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Murin, Leonid; Svensson, Bengt Gunnar; Markevich, Vladimir P. & Peaker, Anthony R. (2014). Interactions of self-interstitials with interstitial carbon-interstitial oxygen center in irradiated silicon: An infrared absorption study. Solid State Phenomena. ISSN 1012-0394. 205-206, p. 218–223. doi: 10.4028/www.scientific.net/SSP.205-206.218.
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Quemener, Vincent; Herklotz, Frank; Murin, Leonid; Monakhov, Edouard; Svensson, Bengt Gunnar & Raeissi, Bahman (2014). Kinetics study of vacancy-oxygen-related defects in monocrystalline solar silicon. Physica status solidi (b). ISSN 0370-1972. 251(11), p. 2197–2200. doi: 10.1002/pssb.201400155.
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Murin, Leonid; Tolkacheva, E. A.; Markevich, V.P.; Peaker, A.R.; Hamilton, Bruce & Monakhov, Edouard [Show all 11 contributors for this article] (2011). The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells? Applied Physics Letters. ISSN 0003-6951. 98(18). doi: 10.1063/1.3584138.
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Markevich, V.P.; Peaker, A.R.; Hamilton, B.; Lastovskii, S.B.; Murin, Leonid & Coutinho, J. [Show all 9 contributors for this article] (2011). Structure and electronic properties of trivacancy and trivacancy-oxygen complexes in silicon. Physica status solidi. A, Applied research. ISSN 0031-8965. 208(3), p. 568–571. doi: 10.1002/pssa.201000265.
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Murin, Leonid; Svensson, Bengt Gunnar; Lindström, J. L.; Markevich, V.P. & Londos, C.A. (2009). Trivacancy-oxygen complex in silicon: Local vibrational mode characterization. Physica. B, Condensed matter. ISSN 0921-4526. 404(23-24), p. 4568–4571. doi: 10.1016/j.physb.2009.08.144.
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Markevich, V.P.; Peaker, A.R.; Lastovskii, S.B.; Murin, Leonid; Coutinho, J. & Markevich, A. V. [Show all 11 contributors for this article] (2009). Trivacancy in silicon: A combined DLTS and ab-initio modeling study. Physica. B, Condensed matter. ISSN 0921-4526. 404(23-24), p. 4565–4567. doi: 10.1016/j.physb.2009.08.142.
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Quemener, Vincent; Raessi, Bahman; Herklotz, Frank; Murin, Leonid; Monakhov, Edouard & Svensson, Bengt Gunnar (2014). Kinetic Study of Vacancy Oxygen-related Defects in Mono-crystalline Solar Silicon.
Published
Mar. 11, 2013 1:49 PM
- Last modified
Mar. 11, 2013 1:51 PM