Robert Michael Karsthof
I do research related to defects in semiconductors. At the moment, I focus on the materials silicon carbide (SiC) and nickel oxide (NiO).
For SiC, defects can have interesting properties for quantum communication and quantum computation applications. I introduce defects in irradiation experiments and then detect electronic states associated with them with various optical and electrical experimental techniques.
For NiO, the "state-of-the-art" is somewhat less mature. I am trying to make structures that allow us to study defect states, which partly is done with classical electrical methods, but also more explorative using transmission electron microscopy and related techniques.
I have studied physics in Leipzig, Germany, where I received my M.Sc. degree in 2012, and my PhD in 2018.
Robert Karsthof, Marius Grundmann, Arthur Markus Anton, and Friedrich Kremer: Polaronic interacceptor hopping transport in intrinsically doped nickel oxide, Physical Review B 99, 235201 (2019), doi: 10.1103/PhysRevB.99.235201
Robert Karsthof, Arthur Markus Anton, Friedrich Kremer, and Marius Grundmann: Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium, Physical Review Materials 4, 034601 (2020), doi: 10.1103/PhysRevMaterials.4.034601