Robert Michael Karsthof
I do research related to defects in semiconductors. At the moment, I focus on the materials silicon carbide (SiC) and nickel oxide (NiO).
For SiC, defects can have interesting properties for quantum communication and quantum computation applications. I introduce defects in irradiation experiments and then detect electronic states associated with them with various optical and electrical experimental techniques.
NiO is a versatile material with applications in solar cells, LEDs, batteries, so-called "smart windows", or for fast-switching memory cells. For all these fields, understanding the origin and properties of defects is critical. The "state-of-the-art" regarding defects in NiO is somewhat less mature than in other oxide semiconductors. I am trying to make structures that allow us to study defect states, which partly is done with classical electrical methods, but also more explorative using transmission electron microscopy and related techniques.
I have studied physics in Leipzig, Germany, where I received my M.Sc. degree in 2012, and my PhD in 2018.