rkarsthof

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Academic interests

I do research related to defects in semiconductors. At the moment, I focus on the materials silicon carbide (SiC) and nickel oxide (NiO).

For SiC, defects can have interesting properties for quantum communication and quantum computation applications. I introduce defects in irradiation experiments and then detect electronic states associated with them with various optical and electrical experimental techniques.

NiO is a versatile material with applications in solar cells, LEDs, batteries, so-called "smart windows", or for fast-switching memory cells. For all these fields, understanding the origin and properties of defects is critical. The "state-of-the-art" regarding defects in NiO is somewhat less mature than in other oxide semiconductors. I am trying to make structures that allow us to study defect states, which partly is done with classical electrical methods, but also more explorative using transmission electron microscopy and related techniques.

Background

I have studied physics in Leipzig, Germany, where I received my M.Sc. degree in 2012, and my PhD in 2018.

Tags: SMN, LENS

Robert Karsthof, Marius Grundmann, Arthur Markus Anton, and Friedrich Kremer: Polaronic interacceptor hopping transport in intrinsically doped nickel oxide, Physical Review B 99, 235201 (2019), doi: 10.1103/PhysRevB.99.235201

Robert Karsthof, Arthur Markus Anton, Friedrich Kremer, and Marius Grundmann: Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium, Physical Review Materials 4, 034601 (2020), doi: 10.1103/PhysRevMaterials.4.034601

Robert Karsthof, Marianne Etzelmüller Bathen, Augustinas Galeckas, and Lasse Vines: Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC, Physical Review B 102, 184111 (2020), doi: 10.1103/PhysRevB.102.184111

Robert Karsthof, Holger von Wenckstern, Vegard Skiftestad Olsen, and Marius Grundmann: Identification of Li_Ni and V_Ni acceptor levels in doped nickel oxide, APL Materials 8, 121106 (2020), doi: 10.1063/5.0032102

Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Galeckas, Augustinas; Kumar, Piyush; Kuznetsov, Andrej & Grossner, Ulrike [Show all 7 contributors for this article] (2024). Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime. Materials Science in Semiconductor Processing. ISSN 1369-8001. 176. doi: 10.1016/j.mssp.2024.108316. Full text in Research Archive
Ghezellou, Misagh; Kumar, Piyush; Bathen, Marianne E.; Karsthof, Robert Michael; Sveinbjörnsson, Einar Ö. & Grossner, Ulrike [Show all 9 contributors for this article] (2023). The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers. APL Materials. 11(3). doi: 10.1063/5.0142415. Full text in Research Archive Show summary
One of the main challenges in realizing 4H–SiC (silicon carbide)-based bipolar devices is the improvement of minority carrier lifetime in as-grown epitaxial layers. Although Z1/2 has been identified as the dominant carrier lifetime limiting defect, we report on B-related centers being another dominant source of recombination and acting as lifetime limiting defects in 4H–SiC epitaxial layers. Combining time-resolved photoluminescence (TRPL) measurement in near band edge emission and 530 nm, deep level transient spectroscopy, and minority carrier transient spectroscopy (MCTS), it was found that B related deep levels in the lower half of the bandgap are responsible for killing the minority carriers in n-type, 4H–SiC epitaxial layers when the concentration of Z1/2 is already low. The impact of these centers on the charge carrier dynamics is investigated by correlating the MCTS results with temperature-dependent TRPL decay measurements. It is shown that the influence of shallow B acceptors on the minority carrier lifetime becomes neutralized at temperatures above ∼422 K. Instead, the deep B related acceptor level, known as the D-center, remains active until temperatures above ∼570 K. Moreover, a correlation between the deep level concentrations, minority carrier lifetimes, and growth parameters indicates that intentional nitrogen doping hinders the formation of deep B acceptor levels. Furthermore, tuning growth parameters, including growth temperature and C/Si ratio, is shown to be crucial for improving the minority carrier lifetime in as-grown 4H–SiC epitaxial layers.
Langørgen, Amanda; Frodason, Ymir Kalmann; Karsthof, Robert Michael; Wenckstern, Holger Von; Jensen, Ingvild Julie Thue & Vines, Lasse [Show all 7 contributors for this article] (2023). Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy. Journal of Applied Physics. ISSN 0021-8979. 134(1), p. 015701-1–015701-6. doi: 10.1063/5.0150994. Full text in Research Archive Show summary
Defects in pulsed-laser deposition grown have been investigated using thermal admittance spectroscopy and secondary ion mass spectrometry (SIMS). A film was grown on either a tin-doped indium oxide or an aluminum-doped zinc oxide buffer layer on a sapphire substrate functioning as back contact layer in vertical diode structures. In both sample types, a distinct signature in the capacitance signal was observed in the temperature range of 150–260 K. The corresponding defect charge-state transition level, labeled ⁠, was found to exhibit an activation energy of 0.21 eV. Potential candidates for the level were investigated using a combination of SIMS and hybrid-functional calculations. SIMS revealed the main impurities in the sample to be tin, silicon, and iron. The hybrid-functional calculations predict the acceptor levels of substitutional iron to lie 0.7–1.2 eV below the conduction band minimum depending on Ga-site, making an unlikely candidate for the level. Furthermore, Si as well as Sn substituting on the sixfold coordinated Ga2 site and the fivefold coordinated Ga3 and Ga4 sites are all shallow donors in -⁠, similar to that of -⁠. Sn substituting on the fourfold Ga1 site is, however, predicted to have levels in the bandgap at 0.15 and 0.24 eV below the conduction band minimum, in accordance with the extracted activation energy for ⁠. Thus, we tentatively assign as the origin of the level.
Borgersen, Jon; Karsthof, Robert Michael; Rønning, Vegard; Vines, Lasse; Wenckstern, Holger Von & Grundmann, Marius [Show all 8 contributors for this article] (2023). Origin of enhanced conductivity in low dose ion irradiated oxides. AIP Advances. 13(1), p. 015211-1–015211-5. doi: 10.1063/5.0134699. Full text in Research Archive Show summary
Significant resistivity variations have previously been observed in oxides subjected to relatively low ion irradiation doses, nominally insufficient to generate the amount of bulk defects needed to explain the phenomena. In an effort to unveil the underlying mechanisms, we performed a systematic comparative study of the resistivity evolution in In 2 O 3 -based oxides as a function of low ion doses and ultraviolet (UV) illumination, observing striking correlations. Specifically, we found that irradiation with ∼3 × 10 12 Si/cm 2 and ∼18 h UV exposure result in similar resistivity drops, interpreted in terms of irradiation/illumination assisted desorption of oxygen containing species from the surface. This was further proven by post-irradiation exposure of one of the samples to an oxygen atmosphere partially restoring the resistivity. Combining the present results with literature data, we conclude that the radiation tolerance of In 2 O 3 -based and similar oxides depends on the surface charge modifications, individual defect contributions, and contributions from defect complexes at low, intermediate, and high doses, respectively.
Galeckas, Augustinas; Karsthof, Robert Michael; Kingsly, Gana; Kok, Angela; Bathen, Marianne Etzelmüller & Vines, Lasse [Show all 7 contributors for this article] (2022). Cross-Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations. Physica Status Solidi (a) applications and materials science. ISSN 1862-6300. p. 1–7. doi: 10.1002/pssa.202200449. Full text in Research Archive Show summary
The carrier lifetime control over 150 μm thick 4H-SiC epitaxial layers via thermal generation and annihilation of carbon vacancy (VC) related Z1/2 lifetime killer sites is reported. The defect developments upon typical SiC processing steps, such as high- and moderate-temperature anneals in the presence of a carbon cap, are monitored by combining electrical characterization techniques capable of VC depth-profiling, capacitance–voltage (CV) and deep-level transient spectroscopy (DLTS), with a novel all-optical approach of cross-sectional carrier lifetime profiling across 4H-SiC epilayer/substrate based on imaging time-resolved photoluminescence (TRPL) spectroscopy in orthogonal pump-probe geometry, which readily exposes in-depth efficacy of defect reduction and surface recombination effects. The lifetime control is realized by initial high-temperature treatment (1800 °C) to increase VC concentration to ≈1013 cm−3 level followed by a moderate-temperature (1500 °C) post-annealing of variable duration under C-rich thermodynamic equilibrium conditions. The post-annealing carried out for 5 h in effect eliminates VC throughout the entire ultra-thick epilayer. The reduction of VC-related Z1/2 sites is proven by a significant lifetime increase from 0.8 to 2.5 μs. The upper limit of lifetimes in terms of carrier surface leakage and the presence of other nonradiative recombination centers besides Z1/2, possibly related to residual impurities such as boron are discussed.
Langørgen, Amanda; Zimmermann, Christian; Frodason, Ymir Kalmann; Verhoeven, Espen Førdestrøm; Weiser, Philip Michael & Karsthof, Robert Michael [Show all 8 contributors for this article] (2022). Influence of heat treatments in H2 and Ar on the E1 center in β-Ga2O3. Journal of Applied Physics. ISSN 0021-8979. 131(115702). doi: 10.1063/5.0083861. Full text in Research Archive Show summary
The influence of heat treating [Formula: see text]-type bulk [Formula: see text]-Ga[Formula: see text]O[Formula: see text] in hydrogen (H[Formula: see text]) and argon (Ar) gases on the presence of the defect level commonly labeled as [Formula: see text] was studied. Fourier transform-infrared spectroscopy confirms that hydrogen (H) is incorporated into [Formula: see text]-Ga[Formula: see text]O[Formula: see text] during H[Formula: see text] annealing at 900 °C. Deep-level transient spectroscopy measurements reveal that the concentration of the [Formula: see text] level is promoted by the introduction of H, in contrast to what is observed in samples heat-treated in an Ar flow. We further find the [Formula: see text] level to be stable against heat treatments at 650 K, both with and without an applied reverse-bias voltage. Potential candidates for the defect origin of [Formula: see text] are investigated using hybrid-functional calculations, and three types of defect complexes involving H are found to exhibit charge-state transition levels compatible with [Formula: see text], including substitutional H at one of the threefold coordinated O sites, Ga-substitutional shallow donor impurities passivated by H, and certain configurations of singly hydrogenated Ga–O divacancies. Among these types, only the latter exhibit H binding energies that are consistent with the observed thermal stability of [Formula: see text].
Karsthof, Robert Michael; Frodason, Ymir Kalmann; Galeckas, Augustinas; Weiser, Philip Michael; Zviagin, Vitaly & Grundmann, Marius (2022). Light Absorption and Emission by Defects in Doped Nickel Oxide. Advanced Photonics Research. ISSN 2699-9293. 3(11). doi: 10.1002/adpr.202200138. Full text in Research Archive
Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Grossner, Ulrike & Vines, Lasse (2022). Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC. Materials Science Forum. ISSN 0255-5476. 1062, p. 371–375. doi: 10.4028/p-ryui6b. Full text in Research Archive Show summary
Silicon carbide (SiC) is a wide band-gap semiconductor of great technological importance, showing promise for application areas ranging from quantum computing and communication to power devices. Vital in both the contexts of power devices and quantum technology is the understanding of intrinsic defects that are introduced during various device processing steps, both immediately after their formation and over the course of defect evolution with temperature. Here we monitor the formation and evolution of intrinsic point defects in n-type 4H-SiC after proton irradiation at room temperature and subsequent annealing in the temperature range 300-1000 °C, and discuss the nature and origin of the EH 4 and EH 5 deep level defects observed by deep level transient spectroscopy around 400-500 K. In particular, the controversy on the nature of the EH5 trap in particular is addressed, where we propose the presence of two overlapping defect peaks: one metastable level that appears after low energy electron irradiation below the silicon displacement limit, and one more stable level that gradually decreases in concentration until an annealing temperature of 1000°C. We argue that the former is likely related to carbon interstitials, while the latter was recently tentatively attributed to the carbon antisite-vacancy pair.
Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Kuznetsov, Andrej & Vines, Lasse (2022). Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 131. doi: 10.1063/5.0077308. Full text in Research Archive Show summary
Electrical properties of point defects in 4𝐻-SiC have been studied extensively, but those related to carbon interstitials (Ci) have remained elusive until now. Indeed, when introduced via ion irradiation or implantation, signatures related to Ci observed by deep level transient spectroscopy tend to overlap with those of other primary defects, making the direct identification of Ci-related levels difficult. Recent literature has suggested to assign the so-called M center, often found in as-irradiated 4𝐻-SiC, to charge state transitions of the Ci defect in different configurations. In this work, we have introduced excess carbon into low-doped 𝑛-type 150 𝜇m thick 4𝐻-SiC epilayers by thermal annealing, with a pyrolyzed carbon cap on the sample surface acting as a carbon source. Because the layers exhibited initially low concentrations of carbon vacancies ([𝑉C]=1011cm), this enabled us to study the case of complete VC annihilation and formation of defects due to excess carbon, i.e., carbon interstitials Ci and their higher-order complexes. We report on the occurrence of several new levels upon C injection, which are likely Ci-related. Their properties are different from those found for the M center, which point toward a different microscopic identity of the detected levels. This suggests the existence of a rich variety of Ci-related defects. The study will also help generating new insights into the microscopic process of VC annihilation during carbon injection processes.
Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Karsthof, Robert Michael; Delteil, Aymeric; Sallet, Vincent & Kuznetsov, Andrej [Show all 7 contributors for this article] (2021). Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide. Physical review B (PRB). ISSN 2469-9950. 104. doi: 10.1103/PhysRevB.104.045120. Full text in Research Archive Show summary
Point defects in semiconductors are promising single-photon emitters (SPEs) for quantum computing, communication, and sensing applications. However, factors such as emission brightness, purity. and indistinguishability are limited by interactions between localized defect states and the surrounding environment. Therefore, it is important to map the full emission spectrum from each SPE, to understand the complex interplay between the different defect configurations, their surroundings, and external perturbations. Herein, we investigate a family of regularly spaced sharp luminescence peaks appearing in the near-infrared portion of photoluminescence (PL) spectra from n-type 4H-SiC samples after irradiation. This periodic emitter family, labeled the L lines, is only observed when the zero-phonon line signatures of the negatively charged Si vacancy (so-called V lines) are present. The L lines appear with 1.45meV and 1.59meV energy spacing after H and He irradiation and increase linearly in intensity with fluence—reminiscent of the intrinsic defect trend. Furthermore, we monitor the dependence of the L-line emission energy and intensity on heat treatments, electric field strength, and PL collection temperature, discussing these data in the context of the L lines. Based on the strong similarity between the irradiation, electric field, and thermal responses of the L and V lines, the L lines are attributed to the Si vacancy in 4H-SiC. The regular and periodic appearance of the L lines provides strong arguments for a vibronic origin explaining the oscillatory multipeak spectrum. To account for the small energy separation of the L lines, we propose a model based on rotations of distortion surrounding the Si vacancy driven by a dynamic Jahn-Teller effect.
Karsthof, Robert Michael; Wenckstern, Holger von; Olsen, Vegard Skiftestad & Grundmann, Marius (2020). Identification of LiNi and VNi acceptor levels in doped nickel oxide. APL Materials. 8(12). doi: 10.1063/5.0032102. Full text in Research Archive Show summary
Nickel oxide, in particular in its doped, semiconducting form, is an important component of several optoelectronic devices. Doped NiO is commonly achieved either by incorporation of lithium, which readily occupies Ni sites substitutionally, producing the LiNi acceptor, or by supplying reactive oxygen species during NiO film deposition, which leads to the formation of Ni vacancies (VNi). However, the energetic position of these acceptors in the NiO bandgap has not been experimentally determined until today. In this work, we close this knowledge gap by studying rectifying n++p heterojunctions consisting of NiO thin films grown on top of fluorine-doped tin oxide. These structures show sufficient rectification to perform electric characterization by defect spectroscopic techniques, specifically capacitance–voltage and thermal admittance spectroscopy. Using these methods, the (0/−) charge transition levels are determined to be 190 meV and 409 meV above the valence band edge for the LiNi and the VNi acceptor, respectively.
Karsthof, Robert Michael; Anton, Arthur Markus; Kremer, Friedrich & Grundmann, Marius (2020). Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium. PHYSICAL REVIEW MATERIALS. 4(3). doi: 10.1103/PhysRevMaterials.4.034601. Full text in Research Archive
Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2020). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Physical review B (PRB). ISSN 2469-9950. 102(18). doi: 10.1103/PhysRevB.102.184111. Full text in Research Archive Show summary
The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photoluminescence spectroscopy. A comprehensive model is suggested describing the evolution and interconversion of irradiation-induced point defects during annealing below 1000 ∘C. The model proposes the EH4 and EH5 traps frequently found by DLTS to originate from the (+/0) charge transition level belonging to different configurations of the carbon antisite-carbon vacancy (CAV) complex. Furthermore, we show that the transformation channel between the silicon vacancy (VSi) and CAV is effectively blocked under n-type conditions, but becomes available in samples where the Fermi level has moved towards the center of the band gap due to irradiation-induced donor compensation. The annealing of VSi and the carbon vacancy (VC) is shown to be dominated by recombination with residual self-interstitials at temperatures of up to 400 ∘C. Going to higher temperatures, a decay of the CAV pair density is reported which is closely correlated to a renewed increase of VC concentration. A conceivable explanation for this process is the dissociation of the CAV pair into separate carbon anitisites and VC defects. Lastly, the presented data supports the claim that the removal of free carriers in irradiated SiC is due to introduced compensating defects and not passivation of shallow nitrogen donors.
Karsthof, Robert Michael; Wenckstern, Holger von; Zuniga-Perez, Jesus; Deparis, Christiane & Grundmann, Marius (2019). Nickel Oxide–Based Heterostructures with Large Band Offsets. Physica status solidi (b). ISSN 0370-1972. p. 1–11. doi: 10.1002/pssb.201900639. Full text in Research Archive Show summary
The authors present research on the electronic transport in heterostructures based on p-type nickel oxide (NiO) with the n-type oxide semiconductors zinc oxide (ZnO) and cadmium oxide (CdO). NiO is a desirable candidate for application in (opto)electronic devices. Because of its small electron affinity, heterojunctions with most n-type oxide semiconductors exhibit conduction and valence band offsets at the heterointerface in excess of 1 eV. ZnO/NiO junctions exhibit a so-called type-II band alignment, making interfacial electron–hole recombination the only process enabling vertical current flow through the structure. These heterojunctions are nevertheless shown to be of practical use in optoelectronic devices, as exemplified here by UV-converting transparent solar cells. These devices, although exhibiting high conversion efficiencies, suffer from two light-activated recombination channels connected to the type-II interface, one of which the authors analyze in more detail here. Furthermore, CdO/NiO contacts are studied—a heterostructure with even larger band offsets, achieving a type-III band alignment which theoretically enables the development of a 2D electronic system consisting of topologically protected states. The authors present experiments demonstrating that CdO/NiO heterostructures indeed hosts a conductive layer absent in both materials when studied separately.

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Langørgen, Amanda; Frodason, Ymir Kalmann; Zimmermann, Christian; Karsthof, Robert Michael; Weiser, Philip Michael & Jensen, Ingvild Julie Thue [Show all 7 contributors for this article] (2025). Seminar talk - Electrically active defects in β-Ga2O3. Full text in Research Archive
Galeckas, Augustinas; Karsthof, Robert Michael; Gana, Kingsly; Kok, Angela; Bathen, Marianne Etzelmüller & Vines, Lasse [Show all 7 contributors for this article] (2022). Cross-sectional carrier lifetime profiling and deep level monitoring in silicon carbide films exhibiting variable carbon vacancy concentrations. Full text in Research Archive Show summary
We report on the carrier lifetime control over 150 μmthick 4H-SiC epitaxial layers via thermal generation and annihilation of carbon vacancy (VC) related Z1/2lifetime killer sites. The defect developments upon typical SiC processing steps, such as high- and moderate-temperature anneals in the presence of a carbon cap,are monitored by combining electrical characterization techniques capable of VC depth-profiling, capacitance-voltage (CV) and deep-level transient spectroscopy (DLTS), with a novel all-optical approach of cross-sectional carrier lifetime profiling across 4H-SiC epilayer/substrate based on imaging time-resolved photoluminescence (TRPL) spectroscopy in orthogonal pump-probe geometry,which readily exposes in-depth efficacy ofdefect reduction and surface recombination effects.The lifetime control is realized byinitialhigh-temperature treatment (1800ºC) to increase VC concentration to ~1013 cm-3 level followed by a moderate-temperature (1500ºC) post-annealing of variable duration under C-rich thermodynamic equilibrium conditions. The post-annealing carried out for 5 hours in effect eliminates VCthroughout the entire ultra-thick epilayer. The reduction of VC-related Z1/2 sites is proven by a significant lifetime increase from 0.8 μs to 2.5 μs. We discuss the upper limit of lifetimes in terms of carrier surface leakage and presence of other non-radiative recombination centers besides Z1/2, possibly related to residual impurities such as boron.
Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2022). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Full text in Research Archive
Langørgen, Amanda; Frodason, Ymir Kalmann; Karsthof, Robert Michael; Wenckstern, Holger von; Jensen, Ingvild Thue & Vines, Lasse (2022). An electron trap in κ-Ga2O3 and the quest for its microscopic origin. Full text in Research Archive
Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Kumar, Piyush; Galeckas, Augustinas; Kuznetsov, Andrej & Vines, Lasse [Show all 7 contributors for this article] (2022). Impact of C-injection in 4H-SiC on defect distribution and minority carrier lifetime. Full text in Research Archive
Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Kumar, Piyush; Galeckas, Augustinas; Kuznetsov, Andrej Yu. & Vines, Lasse [Show all 7 contributors for this article] (2022). Impact of C-injection in SiC on defect distribution and minority carrier lifetime. Full text in Research Archive
Norby, Truls; Karsthof, Robert Michael; Saeed, Sarmad Waheed; Kuznetsov, Andrej & Vines, Lasse (2022). The p-n junction has nothing to do with ionics. Does it? Full text in Research Archive
Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Linnarsson, Margareta; Galeckas, Augustinas; Kuznetsov, Andrej & Grossner, Ulrike [Show all 7 contributors for this article] (2021). Stability, evolution and diffusion of intrinsic point defects in 4H-SiC. Full text in Research Archive
Langørgen, Amanda; Karsthof, Robert Michael; Weiser, Philip Michael; Cavani, Olivier; Grasset, Romain & Frodason, Ymir Kalmann [Show all 8 contributors for this article] (2021). Steady-state Photocapacitance Spectroscopy of Intrinsic Defects in Electron-Irradiated β-Ga₂O₃. Full text in Research Archive
Zimmermann, Christian; Frodason, Ymir Kalmann; Varley, Joel Basile; Verhoeven, Espen Førdestrøm; Rønning, Vegard & Weiser, Philip Michael [Show all 15 contributors for this article] (2021). Identification of Fe-, Ti- and H-related Charge-state Transition Levels in β-Ga2O3. Full text in Research Archive
Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Enga, Marius & Vines, Lasse (2021). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Full text in Research Archive
Karsthof, Robert Michael; Wenckstern, Holger von; Olsen, Vegard Skiftestad & Grundmann, Marius (2021). Identification of LiNi and VNi acceptor levels in doped nickel oxide. Full text in Research Archive
Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2021). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Full text in Research Archive
Tømta, Sindre Ludvigsen; Kuznetsov, Andrej; Gongora, David Rivas & Karsthof, Robert Michael (2021). Single-Photon Emitters in Silicon for Quantum Technology. Universitetet i Oslo. Full text in Research Archive

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Published Mar. 11, 2020 5:24 PM - Last modified Mar. 10, 2021 3:05 PM

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