Robert Michael Karsthof
I do research related to defects in semiconductors. At the moment, I focus on the materials silicon carbide (SiC) and nickel oxide (NiO).
For SiC, defects can have interesting properties for quantum communication and quantum computation applications. I introduce defects in irradiation experiments and then detect electronic states associated with them with various optical and electrical experimental techniques.
NiO is a versatile material with applications in solar cells, LEDs, batteries, so-called "smart windows", or for fast-switching memory cells. For all these fields, understanding the origin and properties of defects is critical. The "state-of-the-art" regarding defects in NiO is somewhat less mature than in other oxide semiconductors. I am trying to make structures that allow us to study defect states, which partly is done with classical electrical methods, but also more explorative using transmission electron microscopy and related techniques.
I have studied physics in Leipzig, Germany, where I received my M.Sc. degree in 2012, and my PhD in 2018.
Robert Karsthof, Marius Grundmann, Arthur Markus Anton, and Friedrich Kremer: Polaronic interacceptor hopping transport in intrinsically doped nickel oxide, Physical Review B 99, 235201 (2019), doi: 10.1103/PhysRevB.99.235201
Robert Karsthof, Arthur Markus Anton, Friedrich Kremer, and Marius Grundmann: Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium, Physical Review Materials 4, 034601 (2020), doi: 10.1103/PhysRevMaterials.4.034601
Robert Karsthof, Marianne Etzelmüller Bathen, Augustinas Galeckas, and Lasse Vines: Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC, Physical Review B 102, 184111 (2020), doi: 10.1103/PhysRevB.102.184111
Robert Karsthof, Holger von Wenckstern, Vegard Skiftestad Olsen, and Marius Grundmann: Identification of LiNi and VNi acceptor levels in doped nickel oxide, APL Materials 8, 121106 (2020), doi: 10.1063/5.0032102
- Karsthof, Robert Michael; Anton, Arthur Markus; Kremer, Friedrich & Grundmann, Marius (2020). Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium. PHYSICAL REVIEW MATERIALS. ISSN 2475-9953. 4(3) . doi: 10.1103/PhysRevMaterials.4.034601
- Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2020). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Physical review B (PRB). ISSN 2469-9950. 102(18) . doi: 10.1103/PhysRevB.102.184111 Full text in Research Archive. Show summary
- Karsthof, Robert Michael; von Wenckstern, Holger; Olsen, Vegard Skiftestad & Grundmann, Marius (2020). Identification of LiNi and VNi acceptor levels in doped nickel oxide. APL Materials. ISSN 2166-532X. 8(12) . doi: 10.1063/5.0032102 Full text in Research Archive.
- Karsthof, Robert Michael; von Wenckstern, Holger; Zuniga-Perez, Jesus; Deparis, Christiane & Grundmann, Marius (2019). Nickel Oxide–Based Heterostructures with Large Band Offsets. Physica status solidi (b). ISSN 0370-1972. s 1- 11 . doi: 10.1002/pssb.201900639