Robert Michael Karsthof

Image of Robert Michael Karsthof
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Visiting address Kristen Nygaards hus Gaustadalleen 23A 0373 OSLO
Postal address Postboks 1048 Blindern 0316 Oslo

Academic interests

I do research related to defects in semiconductors. At the moment, I focus on the materials silicon carbide (SiC) and nickel oxide (NiO).

For SiC, defects can have interesting properties for quantum communication and quantum computation applications. I introduce defects in irradiation experiments and then detect electronic states associated with them with various optical and electrical experimental techniques.

NiO is a versatile material with applications in solar cells, LEDs, batteries, so-called "smart windows", or for fast-switching memory cells. For all these fields, understanding the origin and properties of defects is critical. The "state-of-the-art" regarding defects in NiO is somewhat less mature than in other oxide semiconductors. I am trying to make structures that allow us to study defect states, which partly is done with classical electrical methods, but also more explorative using transmission electron microscopy and related techniques.

Background

I have studied physics in Leipzig, Germany, where I received my M.Sc. degree in 2012, and my PhD in 2018.

 

Tags: SMN, LENS

Publications

Robert Karsthof, Marius Grundmann, Arthur Markus Anton, and Friedrich Kremer: Polaronic interacceptor hopping transport in intrinsically doped nickel oxide, Physical Review B 99, 235201 (2019), doi: 10.1103/PhysRevB.99.235201

Robert Karsthof, Arthur Markus Anton, Friedrich Kremer, and Marius Grundmann: Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium, Physical Review Materials 4, 034601 (2020), doi: 10.1103/PhysRevMaterials.4.034601

Robert Karsthof, Marianne Etzelmüller Bathen, Augustinas Galeckas, and Lasse Vines: Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC, Physical Review B 102, 184111 (2020), doi: 10.1103/PhysRevB.102.184111

Robert Karsthof, Holger von Wenckstern, Vegard Skiftestad Olsen, and Marius Grundmann: Identification of LiNi and VNi acceptor levels in doped nickel oxide, APL Materials 8, 121106 (2020), doi: 10.1063/5.0032102

  • Karsthof, Robert Michael; Anton, Arthur Markus; Kremer, Friedrich & Grundmann, Marius (2020). Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium. PHYSICAL REVIEW MATERIALS.  ISSN 2475-9953.  4(3) . doi: 10.1103/PhysRevMaterials.4.034601
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2020). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Physical review B (PRB).  ISSN 2469-9950.  102(18) . doi: 10.1103/PhysRevB.102.184111 Full text in Research Archive. Show summary
  • Karsthof, Robert Michael; von Wenckstern, Holger; Olsen, Vegard Skiftestad & Grundmann, Marius (2020). Identification of LiNi and VNi acceptor levels in doped nickel oxide. APL Materials.  ISSN 2166-532X.  8(12) . doi: 10.1063/5.0032102 Full text in Research Archive.
  • Karsthof, Robert Michael; von Wenckstern, Holger; Zuniga-Perez, Jesus; Deparis, Christiane & Grundmann, Marius (2019). Nickel Oxide–Based Heterostructures with Large Band Offsets. Physica status solidi (b).  ISSN 0370-1972.  s 1- 11 . doi: 10.1002/pssb.201900639
Published Mar. 11, 2020 5:24 PM - Last modified Mar. 10, 2021 3:05 PM

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