Robert Michael Karsthof

Image of Robert Michael Karsthof
Norwegian version of this page
Visiting address Kristen Nygaards hus Gaustadalleen 23A 0373 OSLO
Postal address Postboks 1048 Blindern 0316 Oslo

Academic interests

I do research related to defects in semiconductors. At the moment, I focus on the materials silicon carbide (SiC) and nickel oxide (NiO).

For SiC, defects can have interesting properties for quantum communication and quantum computation applications. I introduce defects in irradiation experiments and then detect electronic states associated with them with various optical and electrical experimental techniques.

For NiO, the "state-of-the-art" is somewhat less mature. I am trying to make structures that allow us to study defect states, which partly is done with classical electrical methods, but also more explorative using transmission electron microscopy and related techniques.


I have studied physics in Leipzig, Germany, where I received my M.Sc. degree in 2012, and my PhD in 2018.




Robert Karsthof, Marius Grundmann, Arthur Markus Anton, and Friedrich Kremer: Polaronic interacceptor hopping transport in intrinsically doped nickel oxide, Physical Review B 99, 235201 (2019), doi: 10.1103/PhysRevB.99.235201

Robert Karsthof, Arthur Markus Anton, Friedrich Kremer, and Marius Grundmann: Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium, Physical Review Materials 4, 034601 (2020), doi: 10.1103/PhysRevMaterials.4.034601

Published Mar. 11, 2020 5:24 PM - Last modified Mar. 31, 2020 11:29 AM


Research groups