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Trial lecture - time and place
Trial lecture: 10:15 am at Lille Fysiske auditorium (V232)
Adjudication committee
- Professor Rositsa Yakimova; Department of Physics, Chemistry and Biology; Linköping University; Sweden
- Professor Peter Balling; Department of Physics and Astronomy; Aarhus University; Denmark
- Dr Helge Balk; Department of Physics; University of Oslo; Norway
Chair of defence
- Professor Alexander Lincoln Read
Supervisors
- Eduard Monakhov
- Bengt Gunnar Svensson
Additional information
The work within this thesis is focused on two transparent and conducting/semiconducting materials Cu2O and Al doped ZnO (AZO), and their interfaces with Si.
This work is focused on the characteristics of Cu2O and Al doped ZnO (AZO) films, and their interfaces with Si. The dominating defect energy level (EV+0.27 eV) and charge carrier characteristics of Cu2O films have been deduced from temperature dependent Hall-effect measurements and thermal admittance spectroscopy. Au/Cu2O/n-type Si structures have been characterized by capacitance-voltage (CV), current-voltage (IV) measurements and deep level transient spectroscopy (DLTS). The structural evolution of film and films’ interface with Si, as a function of annealing condition, is examined by X-ray diffraction and transmission-electron-spectroscopy imaging. Mesa type diodes have been prepared from AZO/n-type Si structures and characterized by IV, CV and DLTS. The impact of regular tube furnace annealing and flash lamp annealing (FLA) has been studied. It is found that close to state-of-the-art conductivity is achieved by post deposition FLA, which is attributed to the non-thermalized nature of FLA. It is also found that interfacial defects are passivated by FLA. Further annealing studies, post FLA, focus on the evolution of interfacial defects and charge carrier characteristics.