III-nitrides-based light emitting diodes (LEDs) are presently the leading solid state light sources for use in general lighting, displays, photodynamic therapy, water purification, etc.
This talk discusses the role of nanorod III-nitride LEDs, prepared by top-down dry etching, for improving the functionality, the crystalline quality, the internal quantum efficiency, and the light extraction efficiency.
The methods of nanorod fabrication, of suppressing the adverse effects of RIE-related damage, and of incorporating air voids into the NWs are also discussed.
Furthermore, metal nanoparticles producing localized surface plasmons and semiconductor quantum dots downconverting the wavelength of light emitted by LEDs are explored.
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In-Hwan Lee received his Ph.D. degree in materials science and engineering from Korea University, Korea in 1997.
During 1997–1999, he was a postdoctoral fellow at Northwestern University. Then, he joined Samsung Advanced Institute of Technology, where he led an epitaxial team.
From 2002 to 2017, he was a faculty member at Chonbuk National University, Korea. In 2017 March, he joined Korea University as a full professor.
His research has focused on the nanotechnology-inspired novel LEDs. He has authored or coauthored over 270 peer-reviewed research articles, presented over 70 invited seminars and talks around the world, and holds over 20 patents.