iliak

Image of person
Could not get user data from external service

Academic Interests

Semiconductor physics, Photovoltaics, Point and extended defects, Silicon, Hydrogen-related and oxygen-related defects in silicon, Dislocations

Higher education and employment history

Mar 2014 — present - PhD student at Centre for Materials Science and Nanotechnology Physics, University of Oslo

Nov 2012 — Mar 2014 - Bosch Solar Energy AG, Department of Engineering Crystalline Wafers (SE/ECW), Germany

Jan 2009 — Dec 2012 - Research engineer at V. A. Fock’s Institute of Physics, Department of Electronics of Solid State, Laboratory of Defects in Semiconductors, Russia

Sept 2010 — June 2012 - Master in physics at Saint-Petersburg State University, Faculty of Physics, Department of Electronics of Solid State, Russia

Thesis title: Admittance spectroscopy of electronic states of dislocation networks in the silicon bonded wafers

Sept 2006 — June 2010 - Bachelor in physics at Saint-Petersburg State University, Faculty of Physics, Department of Electronics of Solid State, Russia

Thesis title: Admittance spectroscopy of electronic states at interfaces of silicon based semiconductor structures

Tags: Semiconductors, Defects, Solar cells, DLTS, FTIR, SMN

Publications

[1]     Kolevatov, I.L., Weiser, M.W., Monakhov, E.V., Svensson, B.G., “Interaction between Hydrogen and Vacancy Defects in Crystalline Silicon”, (2018), Review, accepted to Phys. Status Solidi (A), doi: 10.1002/ pssa.201800670
[2]     Kolevatov, I.L., Svensson, B.G., Monakhov, E.V., “Interaction between the divacancy and hydrogen in silicon: Observation of fast and slow kinetics” (2018) J. Appl. Phys., 124(8), 085706
[3]     Gusakov, V.E., Lastovskii, S.B., Murin, L.I., Tolkacheva, E.A., Khirunenko, L.I., Sosnin, M.G., Duvanskii, A.V., Markevich, V.P., Halsall, M.P., Peaker, A.R., Kolevatov, I., Ayedh, H.M., Monakhov, E.V., Svensson, B.G. “The di-interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms” (2017) Phys. Status Solidi (A), 214 (7), art. no. 1700261
[4]     Patra, S.K., Tran, T.-N., Vines, L., Kolevatov, I., Monakhov, E., Fimland, B.-O. “Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy” (2017) J. Cryst. Growth, 463, pp. 116-122. 
[5]     Kolevatov, I., Herklotz, F., Bobal, V., Svensson, B.G., Monakhov, E.V. “Hydrogen-vacancy complexes and their deep states in n-type silicon” (2016) Solid State Phenom., 242, pp. 163-168. 
[6]     Kolevatov, I., Osinniy, V., Herms, M., Loshachenko, A., Shlyakhov, I., Kveder, V., Vyvenko, O. “Oxygen-related defects: Minority carrier lifetime killers in n-type Czochralski silicon wafers for solar cell application” (2015) Phys. Status Solidi (C), 12 (8), pp. 1108-1110. 
[7]     Kolevatov, I., Trushin, M., Vyvenko, O., Kittler, M., Kononchuk, O. “Energetic spectra of dislocation networks produced by hydrophilic bonding of silicon wafers” (2013) Phys. Status Solidi (C), 10 (1), pp. 20-23.
[8]     Bondarenko, A., Vyvenko, O., Kolevatov, I., Isakov, I., Kononchuk, O. “Dislocation structure, electrical and luminescent properties of hydrophilically bonded silicon wafer interface” (2011) Solid State Phenom., 178-179, pp. 233-242.

Published July 20, 2015 2:23 PM - Last modified Oct. 16, 2018 9:44 PM