Semiconductor physics, Photovoltaics, Point and extended defects, Silicon, Hydrogen-related and oxygen-related defects in silicon, Dislocations
Higher education and employment history
Mar 2014 — present - PhD student at Centre for Materials Science and Nanotechnology Physics, University of Oslo
Nov 2012 — Mar 2014 - Bosch Solar Energy AG, Department of Engineering Crystalline Wafers (SE/ECW), Germany
Jan 2009 — Dec 2012 - Research engineer at V. A. Fock’s Institute of Physics, Department of Electronics of Solid State, Laboratory of Defects in Semiconductors, Russia
Sept 2010 — June 2012 - Master in physics at Saint-Petersburg State University, Faculty of Physics, Department of Electronics of Solid State, Russia
Thesis title: Admittance spectroscopy of electronic states of dislocation networks in the silicon bonded wafers
Sept 2006 — June 2010 - Bachelor in physics at Saint-Petersburg State University, Faculty of Physics, Department of Electronics of Solid State, Russia
Thesis title: Admittance spectroscopy of electronic states at interfaces of silicon based semiconductor structures
 Kolevatov, I.L., Weiser, M.W., Monakhov, E.V., Svensson, B.G., “Interaction between Hydrogen and Vacancy Defects in Crystalline Silicon”, (2018), Review, accepted to Phys. Status Solidi (A), doi: 10.1002/ pssa.201800670
 Kolevatov, I.L., Svensson, B.G., Monakhov, E.V., “Interaction between the divacancy and hydrogen in silicon: Observation of fast and slow kinetics” (2018) J. Appl. Phys., 124(8), 085706
 Gusakov, V.E., Lastovskii, S.B., Murin, L.I., Tolkacheva, E.A., Khirunenko, L.I., Sosnin, M.G., Duvanskii, A.V., Markevich, V.P., Halsall, M.P., Peaker, A.R., Kolevatov, I., Ayedh, H.M., Monakhov, E.V., Svensson, B.G. “The di-interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms” (2017) Phys. Status Solidi (A), 214 (7), art. no. 1700261
 Patra, S.K., Tran, T.-N., Vines, L., Kolevatov, I., Monakhov, E., Fimland, B.-O. “Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy” (2017) J. Cryst. Growth, 463, pp. 116-122.
 Kolevatov, I., Herklotz, F., Bobal, V., Svensson, B.G., Monakhov, E.V. “Hydrogen-vacancy complexes and their deep states in n-type silicon” (2016) Solid State Phenom., 242, pp. 163-168.
 Kolevatov, I., Osinniy, V., Herms, M., Loshachenko, A., Shlyakhov, I., Kveder, V., Vyvenko, O. “Oxygen-related defects: Minority carrier lifetime killers in n-type Czochralski silicon wafers for solar cell application” (2015) Phys. Status Solidi (C), 12 (8), pp. 1108-1110.
 Kolevatov, I., Trushin, M., Vyvenko, O., Kittler, M., Kononchuk, O. “Energetic spectra of dislocation networks produced by hydrophilic bonding of silicon wafers” (2013) Phys. Status Solidi (C), 10 (1), pp. 20-23.
 Bondarenko, A., Vyvenko, O., Kolevatov, I., Isakov, I., Kononchuk, O. “Dislocation structure, electrical and luminescent properties of hydrophilically bonded silicon wafer interface” (2011) Solid State Phenom., 178-179, pp. 233-242.