martnyb

• Nyborg, Martin; Azarov, Alexander; Bergum, Kristin & Monakhov, Eduard (2021). Deposition and characterization of lithium doped direct current magnetron sputtered Cu2O films. Thin Solid Films. ISSN 0040-6090. 722(31), p. 1–5. doi: 10.1016/j.tsf.2021.138573. Full text in Research Archive
• Nyborg, Martin; Kolevatov, Ilia; Vasquez, Geraldo Cristian; Bergum, K. & Monakhov, E. (2021). Dominant defects and carrier transport in single crystalline cuprous oxide: A new attribution of optical transitions. Journal of Applied Physics. ISSN 0021-8979. 130(17). doi: 10.1063/5.0059406. Full text in Research Archive Show summary

  Electronic properties of single crystal (111) Cu2O wafers have been investigated using a number of complementary techniques. Secondary ion mass spectrometry has shown significant presence of hydrogen and nitrogen. Cathodoluminescence measurements reveal strong near-band emission indicating the good electronic quality of the wafers. Two deep emission lines are observed at 1.3 and 1.7 eV. Temperature-dependent Hall effect measurements reveal electronic levels at around EV + 0.16 eV, EV + 0.22 eV, and ∼EV + 0.4 eV, where EV is the valence band edge. The discussion on the identity of the electronic centers calls for a revision of the traditional assignments of the 1.3-eV and 1.7-eV lines in order to take into account independent theoretical predictions. The temperature dependence of carrier mobility shows that the mechanism limiting the mobility can be described by scattering on neutral and ionized defect centers.

• Nyborg, Martin; Karlsen, Kjetil; Bergum, Kristin & Monakhov, Eduard (2021). Dominant acceptors in Li doped, magnetron deposited Cu2O films. Materials Research Express. 8(12), p. 1–8. doi: 10.1088/2053-1591/ac3e24. Full text in Research Archive Show summary

  Cu 2 O films deposited by reactive magnetron sputtering with varying Li concentrations have been investigated by a combination of temperature-dependent Hall effect measurement and thermal admittance spectroscopy. As measured by secondary ion mass spectrometry, Li concentrations up to 5 × 10 20 Li/cm 3 have been achieved. Li doping significantly alters the electrical properties of Cu 2 O and increases hole concentration at room temperature for higher Li concentrations. Moreover, the apparent activation energy for the dominant acceptors decreases from around 0.2 eV for undoped or lightly doped Cu 2 O down to as low as 0.05 eV for higher Li concentrations.

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• Bathen, Marianne Etzelmüller; Borgersen, Jon Arthur; Karlsen, Kjetil; Nyborg, Martin; Olsen, Vegard Skiftestad & Reinertsen, Vilde Mari [Show all 7 contributors for this article] (2019). Skolebesøk ved MiNaLab. Full text in Research Archive
• Nyborg, Martin; Bergum, Kristin; Monakhov, Eduard & Svensson, Bengt Gunnar (2018). Nitrogen Doping of Sputtered Cuprous Oxide Thin Films by ion Implantation. Full text in Research Archive
• Nyborg, Martin; Monakhov, Eduard & Bergum, Kristin (2018). Lithium Doped DC Magnetron Sputtered Cu2O Thin Films. Full text in Research Archive
• Bathen, Marianne Etzelmüller; Borgersen, Jon Arthur; Grini, Sigbjørn; Johansen, Klaus Magnus H; Nyborg, Martin & Olsen, Vegard Skiftestad [Show all 7 contributors for this article] (2017). Omvisning FAM. Full text in Research Archive
• Nyborg, Martin; Lindberg, Per; Svensson, Bengt Gunnar; Monakhov, Edouard & Galeckas, Augustinas (2017). DC Magnetron Sputter Deposition of CuxO Thin Films The Effect of Target Power and O2 Flow. Full text in Research Archive Show summary

  In this study, we report on the effect of target power and O2 flow on DC magnetron sputter deposited CuxO thin films. Target power (Ptar) and oxygen flow (QO2) have been varied in the 80 - 100 W and 12-19 sccm range while keeping all other parameters constant.

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