Simon Phillip Cooil

• Røst, Håkon Ivarssønn; Reed, Benjamen P.; Strand, Frode Sneve; Durk, Joseph A.; Evans, D. Andrew & Grubišić-Čabo, Antonija [Show all 18 contributors for this article] (2021). A Simplified Method for Patterning Graphene on Dielectric Layers. ACS Applied Materials & Interfaces. ISSN 1944-8244. 13(31), p. 37510–37516. doi: 10.1021/acsami.1c09987. Full text in Research Archive
• Michels, Leander; Richter, Annika; Chellappan, Rajesh Kumar; Røst, Håkon Ivarssønn; Behsen, Alenka Djarmila & Wells, Kristin Høydalsvik [Show all 13 contributors for this article] (2021). Electronic and structural properties of the natural dyes curcumin, bixin and indigo. RSC Advances. ISSN 2046-2069. 11(23), p. 14169–14177. doi: 10.1039/d0ra08474c. Full text in Research Archive
• Røst, Håkon Ivarssønn; Chellappan, Rajesh Kumar; Strand, Frode Sneve; Grubišić-Čabo, Antonija; Reed, Benjamen P. & Prieto, Mauricio J. [Show all 16 contributors for this article] (2021). Low-Temperature Growth of Graphene on a Semiconductor. Journal of Physical Chemistry C. ISSN 1932-7447. 125(7), p. 4243–4252. doi: 10.1021/acs.jpcc.0c10870. Full text in Research Archive
• Holt, Ann Julie; Mahatha, Sanjoy K.; Stan, Raluca-Maria; Strand, Frode Sneve; Nyborg, Thomas & Curcio, Davide [Show all 12 contributors for this article] (2020). Observation and origin of the [delta] manifold in Si:P [delta] layers. Physical review B (PRB). ISSN 2469-9950. 101(12). doi: 10.1103/PhysRevB.101.121402.
• Pakpour-Tabrizi, Alex; Schenk, Alex Kevin; Holt, Ann Julie; Mahatha, S.K.; Arnold, Fabian & Bianchi, Marco [Show all 14 contributors for this article] (2020). The occupied electronic structure of ultrathin boron doped diamond. Nanoscale Advances. 2(3), p. 1358–1364. doi: 10.1039/C9NA00593E. Full text in Research Archive
• Schenk, Alex Kevin; Pakpour-Tabrizi, Alex; Holt, Ann Julie; mahatha, s.k.; Arnold, Fabian & Bianchi, Marco [Show all 12 contributors for this article] (2019). The occupied electronic structure of ultrathin boron doped diamond. arXiv.org. ISSN 2331-8422. 1907.
• Bahramy, Mohammed Saeed; Clark, Oliver J.; Yang, Bohm Jung; Feng, Jiagui; Bawden, Lewis & Riley, Jonathon M. [Show all 26 contributors for this article] (2018). Ubiquitous formation of bulk Dirac cones and topological surface states from a single orbital manifold in transition-metal dichalcogenides. Nature Materials. ISSN 1476-1122. 17(1), p. 21–27. doi: 10.1038/NMAT5031.
• Risinggård, Helene Kjær; Cooil, Simon Phillip; Mazzola, Federico; Hu, Di; Kjærvik, Marit & Østli, Elise Ramleth [Show all 11 contributors for this article] (2018). Degradation of the chemotherapy drug 5-fluorouracil on medical-grade silver surfaces. Applied Surface Science. ISSN 0169-4332. 435, p. 1213–1219. doi: 10.1016/j.apsusc.2017.11.221.
• Jorge, Marina; Cooil, Simon Phillip; Edmonds, Mark; Thomsen, Lars; Nematollahi, Mohammadreza & Mazzola, Federico [Show all 7 contributors for this article] (2017). Accelerated ageing of molybdenum oxide. Materials Research Express. ISSN 2053-1591. 4(11). doi: 10.1088/2053-1591/aa9287.
• Vinje, Jakob; Falck, Merete; Mazzola, Federico; Cooil, Simon Phillip; Koch, Henrik & Høyvik, Ida-Marie [Show all 7 contributors for this article] (2017). Tautomerization of thymine using ultraviolet light. Langmuir. ISSN 0743-7463. 33(38), p. 9666–9672. doi: 10.1021/acs.langmuir.7b02473.
• Kjeldby, Snorre Braathen; Evenstad, Otto Magnus; Cooil, Simon Phillip & Wells, Justin (2017). Probing dimensionality using a simplified 4-probe method. Journal of Physics: Condensed Matter. ISSN 0953-8984. 29(39). doi: 10.1088/1361-648X/aa8296.
• Cooil, Simon Phillip; Mazzola, Federico; Klemm, Hagen W; Peschel, Gina; Niu, Yuran R & Zakharov, Alexei A [Show all 11 contributors for this article] (2017). In Situ Patterning of Ultrasharp Dopant Profiles in Silicon. ACS Nano. ISSN 1936-0851. 11(2), p. 1683–1688. doi: 10.1021/acsnano.6b07359.
• Jorge, Marina; Polyakov, Stanislav; Cooil, Simon Phillip; Schenk, Alex Kevin; Edmonds, Mark & Thomsen, Lars [Show all 8 contributors for this article] (2017). Robust p-type doping of copper oxide using nitrogen implantation. Materials Research Express. ISSN 2053-1591. 4(7). doi: 10.1088/2053-1591/aa7613. Show summary

  We demonstrate robust p-type doping of Cu2O using low/medium energy ion implantation. Samples are made by controlled oxidation of annealed Cu metal foils, which results in Cu2O with levels of doping close to intrinsic. Samples are then implanted with nitrogen ions using a kinetic energy in the few keV range. Using this method, we are able to produce very high levels of doping, as evidenced by a 350 meV shift in the Fermi level towards the VB maximum. The robustness of the nitrogen implanted samples are tested by exposing them to atmospheric contaminants, and elevated temperatures. The samples are found to survive an increase in temperature of many hundreds of degrees. The robustness of the samples, combined with the fact that the materials used are safe, abundant and non-toxic and that the methods used for the growth of Cu2O and N+ implantation are simple and cheap to implement industrially, underlines the potential of Cu2O:N for affordable intermediate band photovoltaics.

• Bawden, L; Cooil, Simon Phillip; Mazzola, Federico; Riley, JM; Collins-Mcintyre, LJ & Sunko, V [Show all 15 contributors for this article] (2016). Spin-valley locking in the normal state of a transition-metal dichalcogenide superconductor. Nature Communications. ISSN 2041-1723. 7. doi: 10.1038/ncomms11711. Full text in Research Archive
• Cooil, Simon Phillip; Mørtsell, Eva Anne; Mazzola, Federico; Jorge, Marina; Wenner, Sigurd & Edmonds, M T [Show all 15 contributors for this article] (2016). Thermal migration of alloying agents in aluminium. Materials Research Express. ISSN 2053-1591. 3(11). doi: 10.1088/2053-1591/3/11/116501. Show summary

  The in situ thermal migration of alloying agents in an Al–Mg–Si–Li alloy is studied using surface sensitive photo-electron and electron diffraction/imaging techniques. Starting with the preparation of an almost oxide free surface (oxide thickness = 0.1 nm), the relative abundance of alloying agents (Mg, Li and Si) at the surface are recorded at various stages of thermal annealing, from room temperature to melting (which is observed at 550 ◦C). Prior to annealing, the surface abundances are below the detection limit Lt1%, in agreement with their bulk concentrations of 0.423% Si, 0.322% Mg and 0.101% Li (atomic %). At elevated temperatures, all three alloying agents appear at drastically increased concentrations (13.3% Si, 19.7% Mg and 45.3% Li), but decrease again with further elevation of the annealing temperature or after melting. The temperature at which the migration occurs is species dependent, with Li migration occurring at significantly higher temperatures than Si and Mg. The mechanism of migration also appears to be species dependent with Li migration occurring all over the surface but Mg migration being restricted to grain boundaries.

• Mazzola, Federico; Nematollahi, Mohammadreza; Li, Zheshen; Cooil, Simon, Phillip; Yang, Xiaodong & Reenaas, Turid Worren [Show all 7 contributors for this article] (2015). Resonant photoemission spectroscopy for intermediate band materials. Applied Physics Letters. ISSN 0003-6951. 107:192102(19). doi: 10.1063/1.4935536. Show summary

  Resonant photoemission spectroscopy is used to study the intermediate-band material Cr dopedZnS. Using resonant photoemission, we show that the intermediate-band can be characterized, revealing the filling and specific orbital character of the states contributing to the resonant photoemission signal. We demonstrate that resonant photoemission spectroscopy is a powerful approach for understanding the origin of intermediate bands in dopedZnS. The methodology can be widely extended to a large variety of materials, providing useful information towards engineering of high efficiency intermediate band solar cells and of other optoelectronic devices.

• Cooil, Simon, Phillip; Wells, Justin; Hu, Di; Niu, Yuran; Zakharov, Alexei & Bianchi, Marco [Show all 7 contributors for this article] (2015). Controlling the growth of epitaxial graphene on metalized diamond (111) surface. Applied Physics Letters. ISSN 0003-6951. 107:181603(18). doi: 10.1063/1.4935073. Show summary

  The 2-dimensional transformation of the diamond (111) surface to graphene has been demonstrated using ultrathin Fe films that catalytically reduce the reaction temperature needed for the conversion of sp3 to sp2 carbon. An epitaxial system is formed, which involves the re-crystallization of carbon at the Fe/vacuum interface and that enables the controlled growth of monolayer and multilayer graphene films. In order to study the initial stages of single and multilayer graphene growth, real time monitoring of the system was preformed within a photoemission and low energy electron microscope. It was found that the initial graphene growth occurred at temperatures as low as 500 °C, whilst increasing the temperature to 560 °C was required to produce multi-layer graphene of high structural quality. Angle resolved photoelectron spectroscopy was used to study the electronic properties of the grown material, where a graphene-like energy momentum dispersion was observed. The Dirac point for the first layer is located at 2.5 eV below the Fermi level, indicating an n-type doping of the graphene due to substrate interactions, while that of the second graphene layer lies close to the Fermi level.

• Mazzola, Federico; Trinh, Thuat; Cooil, Simon, Phillip; Østli, Elise Ramleth; Høydalsvik, Kristin & Skjønsfjell, Eirik Torbjørn Bakken [Show all 12 contributors for this article] (2015). Graphene coatings for chemotherapy: avoiding silver-mediated degradation. 2D Materials. ISSN 2053-1583. 2(2). doi: 10.1088/2053-1583/2/2/025004.
• Bianchi, M; Song, F; Cooil, Simon Phillip; Monsen, Åsmund Fløystad; Wahlström, Erik & Miwa, JA [Show all 14 contributors for this article] (2015). One-dimensional spin texture of Bi(441): Quantum spin Hall properties without a topological insulator. Physical Review B. Condensed Matter and Materials Physics. ISSN 1098-0121. 91(16). doi: 10.1103/PhysRevB.91.165307.
• Beckwith, Kai Sandvold; Cooil, Simon Phillip; Wells, Justin & Sikorski, Pawel (2015). Tunable high aspect ratio polymer nanostructures for cell interfaces. Nanoscale. ISSN 2040-3364. 7(18), p. 8438–8450. doi: 10.1039/c5nr00674k. Full text in Research Archive

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• Olsen, Vegard Skiftestad; Øversjøen, Vetle; Frodason, Ymir Kalmann; Cooil, Simon; Lee, In-Hwan & Vines, Lasse [Show all 7 contributors for this article] (2021). Electrical control in ZnSnN2 by tailoring intrinsic and extrinsic defects.
• Chellappan, Rajesh Kumar; Cooil, Simon Phillip; Dahl, Oystein & Wells, Justin (2019). Insitu study of graphene patterning on SiC.
• Chellappan, Rajesh Kumar; Cooil, Simon Phillip; Dahl, Oystein & Wells, Justin (2018). Transition metal mediated growth of epitaxial graphene on SiC and intercalation of SiOx for radiation sensing application.
• Schenk, Alex Kevin; Pakpour-Tabrizi, Alex; Mazzola, Federico; Holt, Ann Julie; Nyborg, Thomas & Cooil, Simon Phillip [Show all 13 contributors for this article] (2018). Using ARPES as a tool for exploring quantisation in delta-doped silicon and diamond.
• Vinje, Jakob; Beckwith, Kai Sandvold; Cooil, Simon Phillip; Wells, Justin & Sikorski, Pawel (2017). Nano-structured surfaces and controlled surface chemistry for cell studies.
• Vinje, Jakob; Beckwith, Kai Sandvold; Cooil, Simon Phillip; Wells, Justin & Sikorski, Pawel (2017). Nano-structuring and controlled surface chemistry for cell-studies and biomedical applications.
• Michels, Leander; Patil, Nilesh; Cooil, Simon, Phillip; Coucheron, David Andre; Fokine, Michael & Schleputz, Christian [Show all 9 contributors for this article] (2016). SiGe in confined fiber geometry.

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