Atomic Layer Deposition (ALD)

ALD is suitable for depositing conformal, dense films without pinholes and excellent thickness control even on complicated structures with high aspect ratios. It is not a line-of-sight technique but is based on surface saturation of reactive gas molecules, which occur on all surfaces inside the reaction chamber. As such, all surfaces exposed to the gas molecules, even in porous structures, will be deposited on. It is well suited for depositing on nanowires and trenches.

There are 4 precursor sources available at room temperature, in addition to two precursor sources that can be heated to 300 ºC and 500 ºC. The deposition temperature range from room temperature to 500 ºC. H₂O is commonly used as an oxidizer, but ozone and plasma-enhanced depositions are also available.
The film recipes readily available as standard processes for the instrument are Al₂O₃, TiO₂, ZnO, and ZnO:Al. These are typically deposited at 200 ºC, using trimethyl-aluminum (TMA), TiCl₄, diethyl-zinc (DEZ), but can be deposited down to room temperature, if required. Other processes require some process development. The instrument uses specially designed software from Beneq.

Instrument Features

• Deposition chamber accommodating samples up to 200 mm in diameter and 5 mm in height (2D chamber).
• Large 3D chamber available, for 3D samples up to 200 mm in diameter and 100 mm in height.
• Ozone generator in the instrument.
• N₂-generator providing >5N N₂ directly connected to the ALD.
• Thermal ALD deposition.
• Plasma-enhanced ALD deposition.
• Deposition temperature range: RT – 500 ºC.
• Two hot sources available; can be heated to 300 ºC and 500 ºC.
• Four RT sources evaporated from own vapor pressure.
• QCM (Quartz Crystal Microbalance) available to investigate sub-cycle parameters.
• Typical deposition rates at 200 ºC ~1nm/min, with 15 minutes added to each deposition for pumping and venting.

Sample Requirements

The samples must be able to fit reasonably into the chamber and enable a good flow across the reaction chamber. Otherwise, these deposition methods can be used to deposit on all surfaces – organic or inorganic (i.e. metals, semiconductors, glasses, plastic, paper, etc.). Must be able to withstand vacuum, as process operates at ~1 mbar.

Prices

The ALD system is available for rent with or without an operator. Prices are in Norwegian kroner (NOK) excl. VAT. All prices are subject to change.

The reduced fees for start-up companies are available for the first 24 months after start-up. Training costs are currently covered by NorFab.

Contact

• Simon Phillip Cooil, Lab Manager
• Eirini Zacharaki, Research Infrastructure Coordinator