Our latest publications

2025

• A. Azarov, J. Garcia Fernandez, J. Zhao, R. He, J-H. Park, D-W. Jeon. Phase glides and self-organization of atomically abrupt interfaces out of stochastic disorder in α-Ga₂O₃. Nature Communications 16, 3245 (2025).
• A. Azarov, C. Radu, A. Galeckas, I.F Mercioniu, A. Cernescu, V. Venkatachalapathy, Vishnukanthan, E. Monakhov, F. Djurabekova, C. Ghica, J. Zhao, A. Kuznetsov. Self-assembling of multilayered polymorphs with ion beams. Nano Letters 25, 4, p. 1637–1643 (2025).
• N. Aßmann, B. Hammann, M.C. Frøland, W. Kwapil, E. Monakhov. The differential impact of light soaking and dark annealing on hydrogen species during a LeTID cycle in boron-doped FZ silicon: A quantitative FT-IR study. Solar Energy Materials and Solar Cells 293, p. 1–10 (2025).
• J. Garcia Fernandez, S.B Kjeldby, L.J. Zeng, E. Olsson, L. Vines, Ø. Prytz. Formation and stability of Ge nanocrystals in polymorph converted Ga₂O₃: Temperature-driven journey. Applied Physics Letters 126, 5 (2025).
• M. Ghezellou, E.L. Ousdal, M.E. Bathen, L. Vines, J. Ul-Hassan. Influence of different hydrocarbons on impurities and minority carrier lifetime in 4H-SiC epitaxial layers. J.Phys Materials. 8, 2 (2025). 
• S.B. Kjeldby, D.M. Nielsen, S.P. Cooil, Y.K. Frodason, E. Zacharaki, I.-H. Lee, A. Kuznetsov, L. Vines, K. Bergum, V. S. Olsen. Tuning Properties of II-IV-Nitrides for Optoelectronic Applications. Adv. Optical Mater. e02634 (2025).
• C. Martinella, M.E. Bathen, A. Galeckas, U. Grossner. Formation of extended defects in heavy-ion-degraded SiC power MOSFETs. APL Materials. 13, 5 (2025).
• M. Mehler, N. Weinert, Nicolas, N. Aßmann, A. Herguth, G. Hahn, F Geml. Impact of high-temperature processing steps on the long-term stability of charge carrier lifetime in n -type FZ-silicon. EPJ Photovoltaics 16 (2025).
• O. Samperi, A. Azarov, V. Bobal, M. Bertolini, M. Cantiano, L. Vines, A.Hallén, S. Coffa, M. E. Fragalà. Effects of ion channelling on 350 keV proton implantation of 4H-SiC measured by D-SIMS and DLTS defect profiling. Materials Science in Semiconductor Processing 190, 109320 (2025).

2024

• A. Azarov, A. Galeckas, E. Wendler, E. Monakhov, A. Kuznetsov. Inverse dynamic defect annealing in ZnO. Appl. Phys. Lett. 124, 042106 (2024).
• A. Azarov, A. Galeckas, I. Cora, Z. Fogarassy, V. Venkatachalapathy, E. Monakhov, A. Kuznetsov. Optical Activity and Phase Transformations in γ/β Ga₂O₃ Bilayers Under Annealing. Adv. Optical Mater. 12, 2401325 (2024).
• A. Azarov, A. Galeckas, A. Mikhaylov, A. Nikolskaya, D. Tetelbaum, D. Korolev, E. Monakhov, A. Kuznetsov. Defect evolution and nitrogen incorporation in ion-implanted β-Ga₂O₃. Appl. Phys. Lett. 125, 192107 (2024).
• M.E. Bathen, P. Kumar, M. Ghezellou, M. Belanche, L. Vines, J. Ul-Hassan, U. Grossner. Dual configuration of shallow acceptor levels in 4H-SiC. Materials Science in Semiconductor Processing 177, 108360 (2024).
• M. E. Bathen, R. Karsthof, A. Galeckas, P. Kumar, A. Kuznetsov, U. Grossner, L. Vines. Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime. Materials Science in Semiconductor Processing 176, 108316 (2024).
• I. Bergsbak, Ø. Nordseth, K. K. Saxegaard, V. S. Olsen, H. von Wenckstern, K. Bergum. Device Simulation of 25.9% Efficient ZnO_xN_y/Si Tandem Solar Cell. Adv. Theory Simul. 7, 2400252 (2024).
• J. Garcia Fernandez, S. B. Kjeldby, L.J. Zeng, A. Azarov, A. Pokle, P. D. Nguyen, E. Olsson, L. Vines, A. Kuznetsov, Ø. Prytz. In situ atomic-resolution study of transformations in double polymorph γ/β-Ga₂O₃ structures. Mater. Adv., 5, 3824 (2024).
• B. Hammann, P. Vieira Rodrigues, N. Aßmann, W. Kwapil, F. Schindler, M.C. Schubert, S.W. Glunz. Deciphering the Role of Hydrogen in the Degradation of Silicon Solar Cells under Light and Elevated Temperature. Sol. RRL 8, 2400457 (2024).
• Y. K. Hommedal, M.E. Bathen, V. M. Reinertsen, K.M. Johansen, L. Vines, Y.K. Frodason. Theoretical modeling of defect diffusion in wide bandgap semiconductors. J. Appl. Phys. 135, 170902 (2024).
• Y. K. Hommedal, Y.K. Frodason, A. Galeckas, L. Vines, K.M. Johansen. Broad luminescence from Zn acceptors in Zn doped β-Ga₂O₃. APL Mater. 12, 021109 (2024).
• Y. K. Hommedal, Y. K. Frodason, L. Vines, K.M. Johansen. Diffusion of Ge Donors in β-Ga₂O₃. Phys. Status Solidi B, 2400355 (2024).
• A. Kaźmierczak-Bałata, J. Bodzenta, P. Szperlich, M. Jesionek, A. Michalewicz, A. Domanowska, J. Mayandi, V. Venkatachalapathy, A. Kuznetsov. Impact of Annealing in Various Atmospheres on Characteristics of Tin-Doped Indium Oxide Layers towards Thermoelectric Applications. Materials, 17(18), 4606 (2024).
• A. Langørgen, L. Vines, Y.K. Frodason. Perspective on electrically active defects in β-Ga₂O₃ from deep-level transient spectroscopy and first-principles calculations. J. Appl. Phys. 135, 195702 (2024).
• M. Mehler, N. Weinert, N. Aßmann, A. Herguth, G. Hahn, F. Geml. Long-term carrier lifetime instabilities in n-type FZ- and Cz-silicon under illumination at elevated temperature. Solar Energy Materials & Solar Cells 278, 113169 (2024).
• E. L. Ousdal, M.E. Bathen, A. Galeckas, A. Kuznetsov, L. Vines. Formation and stability of point defect color centers in 6H silicon carbide. J. Appl. Phys. 135, 225701 (2024).
• P. V. Rodrigues, B. Hammann, N. Aßmann, J. Schön, W. Kwapil, T. Niewelt, F. Schindler, E. Monakhov, M.C. Schubert. Doping dependence of boron-hydrogen dynamics in crystalline silicon. J. Appl. Phys. 136, 085703 (2024).
• O. Samperi, L. Vines, A. Hallén, M.E. Fragalà. Charge Carrier Capture by Prominent Defect Centers in 4H-SiC. Defect and Diffusion Forum, 434 (2024).
• G. Sozzi, S. Sapienza, G. Chiorboli, L. Vines, A. Hallen, R. Nipoti. Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law. IEEE Access, 01, 12 (2024).
• H.J. Whitlow, A. Kuznetsov, A. Azarov, G. Nagy, R.J.W. Frost, N. Henderson, R. Greco, N. Deoli, K.M. Smith, W. Sudprasert, S. Amphalop, W. Insuan, S. Wichianchot, M. Ren, T. Osipowicz, C.G. Ryan, F. Villinger. Dynamic Analysis of major elements in biological tissue validating quantification of trace life elements in MeV ion beam microscopy. Nuclear Instruments and Methods in Physics Research B 554, 165411 (2024).
• H.J. Whitlow, G. Nagy, A. Kuznetsov, R.J.W. Frost, A. Azarov, K.M. Smith, S. Amphalop, W. Insuan, S. Wichianchot, M. Ren, T. Osipowicz, C.G. Ryan, W. Sudprasert, F. Villinger. Major and Trace Element Composition Differences Revealed in Porcine Intestine by Dynamic Analysis and MeV Ion Microscopy. Phys. Status Solidi A, 2400161 (2024).

2023

• H. Arslan, I. Aulika, A. Sarakovskis, L. Bikse, M. Zubkins, A. Azarov, J. Gabrusenoks, J. Purans. Reactive pulsed direct current magnetron sputtering deposition of semiconducting yttrium oxide thin film in ultralow oxygen atmosphere: A spectroscopic and structural investigation of growth dynamics. Vacuum 211, 111942 (2023).
• A. Azarov, A. Galeckas, F. C.-C. Ling and A. Kuznetsov. Tuning defect-related optical bands by channeling implants in semiconductors. J. Phys. D: Appl. Phys. 56, 035103 (2023).
• A. Azarov, J. García Fernández, J. Zhao, F. Djurabekova, H. Flyura, H. He, R. He, Ø. Prytz, L. Vines, U. Bektas, P. Chekhonin, N. Klingner, G. Hlawacek, A. Kuznetsov. Universal radiation tolerant semiconductor. Nature Communications 14, 4855 (2023).
• A. Azarov, J-H. Park, D-W. Jeon, A. Kuznetsov. High mobility of intrinsic defects in α-Ga₂O₃. Appl. Phys. Lett. 122, 182104 (2023).
• A. Azarov, V. Venkatachalapathy, I-H. Lee, A. Kuznetsov. Thermal versus radiation-assisted defect annealing in β-Ga₂O₃. J. Vac. Sci. Technol. A 41, 023101 (2023).
• M. E. Bathen, G. M. Selnesaunet, M. J. Enga, S. B. Kjeldby, J. Müting, L. Vines, Lasse; U. Grossner. Charge State Control Over Point Defects in SiC Devices. Defect and Diffusion Forum, 425, 35-42 (2023).
• J. Borgersen, R. Karsthof, V. Rønning, L. Vines, H. Wenckstern, M. Grundmann, A. Kuznetsov, and K. M. Johansen. Origin of enhanced conductivity in low dose ion irradiated oxides. AIP Advances 13, 015211 (2023).
• A. Galeckas, R. M. Karsthof, G. Kingsly, A. Kok, M. E. Bathen, L. Vines and A. Kuznetsov. Cross-sectional carrier lifetime profiling and deep level monitoring in silicon carbide films exhibiting variable carbon vacancy concentrations. Phys. Status Solidi A, 2200449 (2023).
• M. Ghezellou, P. Kumar, M. E. Bathen, R. Karsthof, E. Ö. Sveinbjörnsson, U. Grossner, J. Peder Bergman, L. Vines, and J. Ul-Hassan. The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers. APL Mater 11, 031107 (2023).
• B. Hammann, N. Aßmann, J. Schön, W. Kwapil, F. Schindler, S. Roder, E. Monakhov, M.C. Schubert. Understanding the impact of the cooling ramp of the fast-firing process on light- and elevated-temperature-induced degradation. Solar Energy Materials and Solar Cells 259, 112462 (2023).
• B. Hammann, N. Aßmann, P. M. Weiser, W. Kwapil, T. Niewelt, F. Schindler, R. Søndenå, E. Monakhov, M.C. Schubert. The Impact of Different Hydrogen Configurations on Light- and Elevated-Temperature- Induced Degradation. IEEE Journal of Photovoltaics 13, 224-235 (2023).
• Y. K. Hommedal, Y. K. Frodason, L. Vines, and K. M. H. Johansen. Trap-limited diffusion of Zn in β−Ga₂O₃. Phys. Rev. Materials 7, 035401 (2023).
• S. B. Kjeldby, P. D. Nguyen, J. García-Fernández, K. Haug, A. Galeckas, I. J. T. Jensen,   A. Thøgersen, L. Vines and Ø. Prytz. Optical properties of ZnFe₂O₄ nanoparticles and Fe-decorated inversion domain boundaries in ZnO. Nanoscale Adv., 5, 2102-2110 (2023).
• A. Langørgen, Y. K. Frodason, R. M. Karsthof, H. Von Wenckstern, I. J. T Jensen, L. Vines, M. Grundmann. Defect level in κ-Ga₂O₃ revealed by thermal admittance spectroscopy. J. Appl. Phys. 134, 015701 (2023).
• A. Macková, A. Jagerová, O. Lalik, R. Mikšová, D. Poustka, J. Mistrík, V. Holý, J. D. Schutter, U. Kentsch, P. Marvan, A. Azarov, A. Galeckas. Combined Au/Ag nanoparticle creation in ZnO nanopillars by ion implantation for optical response modulation and photocatalysis. Applied Surface Science 610, 155556 (2023).
• C. Mieszczynski, P. Jozwik, K. Skrobas, K. Stefanska-Skrobas, R. Ratajczak, J. Jagielski, F. Garrido, E. Wyszkowska, A. Azarov, K. Lorenz, E. Alves. Combining MD-LAMMPS and MC-McChasy2 codes for dislocation simulations of Ni single crystal structure. Nuclear Instruments and Methods in Physics Research B 540, pp. 38-44 (2023).
• V. Ney, B. Henne, M. de Souza, W. Jantsch, K. M. Johansen, F. Wilhelm, A. Rogalev, and A. Ney. Valence state, lattice incorporation, and resulting magnetic properties of Ni in Zn/Co-based magnetic oxides. Journal of Applied Physics 133, 033904 (2023).

• M. Nowak, K. Mulewska, A. Azarov, L. Kurpaska, A. Ustrzycka. A peridynamic elasto-plastic damage model for ion-irradiated materials. International Journal of Mechanical Sciences 237, 107806 (2023).

• A. Y. Polyakov, A. I. Kochkova, A. Langørgen, L. Vines, A. Vasilev, I.V. Shchemerov, A. A. Romanov, S. L. Pearton. On the possible nature of deep centers in Ga₂O₃. J. Vac. Sci. Technol. A 41, 023401 (2023).

• K. K. Saxegaard, L. Vines, E. Monakhov, K. Bergum. Characteristics of ZnON films and heterojunction diodes with varying O:N ratios. Thin Solid Films 782, 139968 (2023).

• X. Wang, C. Zimmermann, M. Titze, V. Niaouris, E. R. Hansen, S. H. D'Ambrosia, L. Vines, E. S. Bielejec, K-M. C. Fu. Properties of Donor Qubits in ZnO Formed by Indium-Ion Implantation. Physical Review Applied 19, 054090 (2023).

• E. Wyszkowska, C. Mieszczynski, L. Kurpaska, A. Azarov, W. Chromiński, I. Jóźwik, A. Esfandiarpour, A. Kosińska, D. Kalita, R. Diduszko, J. Jagielski, S. T. Nori, M. Alava. The Fe addition as an effective treatment for improving the radiation resistance of fcc Ni_xFe_1-x single-crystal alloys. Journal of Nuclear Materials 584, 154565 (2023).
• E. Wyszkowska, C. Mieszczynski, L. Kurpaska, A. Azarov, I. Jóźwik, A. Kosińska, W. Chromiński, R. Diduszko, W. Y. Huo, I. Cieślik, J. Jagielski. Tuning heterogeneous ion-radiation damage by composition in Ni_xFe_1−x binary single crystals. Nanoscale 15, 4870-4881 (2023).

2022

• S. Adeojo, J. Malherbe, A. Azarov, O. Odutemowo, E. Njoroge, H. Abdelbagi, S. Mpelane, and T. Hlatshwayo. Effects of implantation temperature and annealing on structural evolution and migration of Se into glassy carbon.  Solid State Sciences 129, 106914 (2022).
• Azarov, K. Bazioti, V. Venkatachalapathy, V. Ponniah, E. Monakhov, and A. Kuznetsov. Disorder-induced ordering in gallium oxide polymorphs. Phys. Rev. Lett. 128, 15704e (2022).
• A. Azarov, V. Venkatachalapathy, P. Karaseov, A. Titov, K. Karabeshkin, A. Struchkov, and A. Kuznetsov. Interplay of the disorder and strain in gallium oxide. Scientific Reports 12, 15366 (2022).
• J. Garcia- Fernandez, S. B. Kjeldby, P.D. Nguyen, Ole B. Karlsen, L. Vines, and Ø. Prytz. Formation of γ-Ga₂O₃ by ion implantation: Polymorphic phase transformation of β-Ga₂O₃. Applied Physics Letters. 121, 191601 (2022).
• R. M. Karsthof, M. E. Bathen, A. Kuznetsov, and L. Vines. Formation of carbon  interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC. Journal of Applied Physics 131, 035702 (2022).
• R. M. Karsthof, Y. K. Frodason, A. Galeckas, P. M. Weiser, V. Zviagin, and M. Grundmann. Light absorption and emission by defects in doped nickel oxide. Adv. Photonics Res., 3, 2200138 (2022).
• S .B. Kjeldby, A. Azarov, P. D. Nguyen, V. Venkatachalapathy, R. Mikšová, A. MacKová, A. Kuznetsov, Ø. Prytz, and L. Vines. Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide. Journal of Applied Physics 131, 125701 (2022).
• A. Langørgen, C. Zimmermann, Y. K. Frodason, E. V. Førdestrøm, P. H. Weiser, R. M. Karsthof, J. B. Varley, and L. Vines. Influence of heat treatments in H₂ and Ar on the E₁ center in β-Ga₂O₃. Journal of Applied Physics 131, 115702 (2022).
• J. Mayandi, T. G. Finstad, M. Stange, G. C. Vasquez, M. F. Sunding, O. M. Løvvik, S. Diplas, and P. A. Carvalho. Controlling the electrical properties of reactively sputtered high entropy alloy CrFeNiCoCu films, Journal of Electronic Materials 51, 803 (2022).
• J. Mayandi, T. G. Finstad, Ø. Dahl, V. Ponniah, M. Schrade, Ole M. Løvvik, S. Diplas, and P. A. Carvalho. Thin films made by reactive sputtering of high entropy alloy FeCoNiCuGe: Optical, electrical and structural properties. Thin Solid Films 744, 139083 (2022).
• V. S. Olsen, Y. K. Frodason, Y. K. Hommedal, D. M. Nielsen, P. M. Weiser, K. M. H. Johansen, I. H. Lee, A. Kuznetsov, and L. Vines. Li and group-III impurity doping in ZnSnN₂: Potential and limitations. Phys. Rev. Materials 6, 124602 (2022).
• J. U. Rahman, P. Almeida, Carvalho, N. Soltani, M. Schrade, A. E. Gunnæs, and T. G. Finstad. Synthesis, microstructure, and thermoelectric properties of Sb-based high entropy alloys. Intermetallics 143, 107495 (2022).
• B. P. Reed, M. E. Bathen, J. W. R. Ash, C. J. Meara, A. A. Zakharov, J. P. Goss, J. W. Wells, D. A. Evans, and S. P. Cooil. Diamond (111) surface reconstruction and epitaxial graphene interface. Phys. Rev. B 105, 205304 (2022).

2021

• B. L. Aarseth, C. S. Granerød, A. Galeckas, A. Azarov, P. D. Nguyen, Ø. Prytz, and L. Vines. Formation and functionalization of Ge-nanoparticles in ZnO, Nanotechnology 32, 505707 (2021).
• G. Alfieri, A. Mihaila, P. Godignon, J. B. Varley, and Lasse Vines. Deep level study of chlorine-based dry etched beta - Ga₂O₃. Journal of Applied Physics 130, 025701 (2021).
• M. Amati, L. Gregoratti, P. Zeller, M. Greiner, M. Scardamaglia, B. Junker, T. Russ, U. Weimar, N. Barsan, M. Favaro, A. Alharbi, I.J.T Jensen, A. Ali, B. Belle. Near ambient pressure photoelectron spectro-microscopy: from gas-solid interface to operando devices. J. Phys. D: Appl. Phys. 54, 542021 (2021).
• N. Assmann, C. Persson, A. Kuznetsov, and E. Monakhov. Fine structure in electronic  transitions attributed to nitrogen donor in silicon carbide. Appl. Phys. Lett. 119, 262101 (2021).
• A. Azarov, V. Venkatachalapathy, L. Vines, E. Monakhov, I.-H. Lee, A. Kuznetsov. Activation energy of silicon diffusion in gallium oxide: Roles of the mediating defects charge states and phase modification. Appl. Phys. Lett. 119, 182103 (2021).
• A. Azarov, V. Venkatachalapathy, E. Monakhov, A. Kuznetsov. Dominating migration barrier for intrinsic defects in gallium oxide: Dose-rate effect measurements. Appl. Phys. Lett.  118, 232101 (2021).

• H.M. Ayedh, K.-E. Kvamsdal, V. Bobal, A. Hallén, F.C.C. Ling, A. Kuznetsov. Carbon vacancy control in p⁺-n silicon carbide diodes for high voltage bipolar applications. J. Phys. D: Appl. Phys 54, 455106 (2021).

   

• E.M. Baba, P.M. Weiser, E.Ö. Zayim, and S. Karazhanov. Temperature-dependent photochromic performance of yttrium oxyhydride thin films. Phys. Status Solidi RRL 15, 2000459 (2021).
• M.E. Bathen, A. Galeckas, R.M. Karsthof, A. Delteil, V. Sallet, A. Kuznetsov, L. Vines. Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide. Phys. Rev. B. 104, 045120 (2021).
• M.E. Bathen, L. Vines. Manipulating single-photon emission from point defects in diamond and silicon carbide. Adv. Quantum Technol. 4, 2100003 (2021).
• A.K. Behera, C. Harris, D. Pete, C. Delker, P.E. Vullum, M. Benthem Muñiz, O. Koybasi, T. Taniguchi, K. Watanabe, B. Belle, S. Das. High-performance and ultralow-noise two-dimensional heterostructure field-effect transistors with one-dimensional electrical contacts. ACS Appl. Electron. Mater. 3, 4126--4134 (2021).
• J. Bonkerud, C. Zimmermann, F. Herklotz, P.M. Weiser, C. Seiffert, E.F. Verhoeven, L. Vines, and E. Monakhov. Electrically-active defects in reduced and hydrogenated rutile TiO₂. Semicond. Sci. Technol. 36, 014006 (2021).
• J. Bonkerud, C. Zimmermann, P. M. Weiser, L. Vines, and E. Monakhov. On the permittivity of titanium dioxide. Scientific Reports 11, 12443 (2021).
• J. Borgersen, K. M. H. Johansen, L. Vines, H. von Wenckstern, M. Grundmann, and A. Kuznetsov. Fermi level controlled point defect balance in ion irradiated indium oxide. Journal of Applied Physics 130, 085703 (2021).
• A. Durand, Y. Baron, W. Redjem, T. Herzig, A. Benali, S. Pezzagna, J. Meijer, A. Kuznetsov, J.-M. Gérard, I. Robert-Philip, M. Abbarchi, V. Jacques, G. Cassabois and A. Dréau. Broad diversity of near-infrared single- photon emitters in silicon. Phys. Rev. Lett. 126, 083602 (2021).
• M. Getz, M. Povoli, and E. Monakhov. Effect of the native oxide on the surface passivation of Si by Al₂O₃, Journal of Applied Physics 129, 205701 (2021).
• I.J.T. Jensen, A. Ali, P. Zeller, A. Patrick, S.Matteo, M. Schrade, P.E. Vullum, M. Benthem Muñiz, P. Bisht, T. Taniguchi, K. Watanabe, M. Kenji; B.R. Mehta, L. Gregoratti, B. Belle. Direct observation of charge transfer between NO_x and monolayer MoS₂ by operando scanning photoelectron microscopy. ACS Appl. Nano Mater. 4, 3319--3324 (2021).
• A. Kaźmierczak-Bałata, L. Grzadziel, M. Guziewicz, V. Venkatachalapathy, A. Kuznetsov, and M. Krzywiecki. Correlations of thermal properties with grain structure, morphology, and defect balance in nanoscale polycrystalline ZnO films. Applied Surface Science 546, 149095 (2021).
• E.S. Köksal, I. Põldsalu, H. Friis, S. Mojzsis, M. Bizzarro, I. Gözen. Spontaneous formation of prebiotic compartment colonies on Hadean Earth and pre-Noachian Mars. BioRxiv (2021).
• M. Linnarsson, L. Vines and A. Hallen. Influence from the electronic shell structure on the range distribution during channeling of 40-300 keV ions in 4H-SiC. Journal of Applied Physics 130, 075701 (2021).
• J. Mayandi, A.M. Lind, M.F. Sunding, M. Schrade, A.C. Cerdeira, M.S.S Stange, M.R. Dias, B. Belle, T.G. Finstad, L. Pereira, S. Diplas, P.A. Carvalho. Partial oxidation of high entropy alloys: A route towards nanostructured ferromagnets. Materialia 101250 (2021).
• J. Mayandi, M. Schrade, P. Vajeeston, S. Ponniah, M.S.S. Stange, A.M. Lind, M.F. Sunding, D.M. Fleissner, J. Deuermeier, E. Fortunato, O.M. Løvvik, A. Ulyashin, S. Diplas, P.A. Carvalho, T.G. Finstad. High entropy alloy CrFeNiCoCu sputtered films. arXiv (2021).
• J. Mayandi, R.K. Madathil, C. Abinaya, K. Bethke, V. Venkatachalapathy, K. Rademann, T.E. Norby, and T. Finstad. Al-doped ZnO prepared by co-precipitation method and its thermoelectric characteristics. Materials Letters 288, 129352 (2021).
• J. Müting, V. Bobal, L. Vines, and U. Grossner. Phosphorus implantation into 4H-SiC at room and elevated temperature. Semicond. Sci. Technol. 36, 065002 (2021).
• M. Nyborg, A. Azarov, K. Bergum, E. Monakhov. Deposition and characterization of lithium doped direct current magnetron sputtered Cu₂O films. Thin Solid Films 722, 138573 (2021).
• M. Nyborg, K. Karlsen, K. Bergum, and E. Monakhov. Dominant acceptors in Li doped, magnetron deposited Cu₂O films. Mater. Res. Express 8, 125903 (2021).
• M. Nyborg, I. Kolevatov, G. C. Vásquez, K. Bergum, and E. Monakhov. Dominant defects and carrier transport in single crystalline cuprous oxide: A new attribution of optical transitions. Journal of Applied Physics 130, 175701 (2021).
• V.S. Olsen, V. Øversjøen, D. Gogova-Petrova, B. Pecz, A. Galeckas, J.A. Borgersen, K. Karlsen, L. Vines, A. Kuznetsov. ZnSnN₂ in real space and k-space: Lattice constants, dislocation density, and optical band gap. Adv. Opt. Mater. 9, 2100015 (2021).
• J.M. Polfus, M.B. Muñiz, A. Ali, D. Barragan-Yani, P.E. Vullum, M.F. Sunding, T. Taniguchi, K. Watanabe, B. Belle. Temperature-dependent adhesion in van der Waals heterostructures. Adv. Mater. Interfaces 8, 2100838 (2021).
• I. Poldsalu, E.S. Köksal, I. Gözen. Mixed fatty acid-phospholipid protocell networks. BioRxiv (2021).
• H. I. Røst, B. P. Reed, F. S. Strand, J. A. Durk, D. A. Evans, A. Grubišić-Čabo, G. Wan, M. Cattelan, M. J. Prieto, D. M. Gottlob, L. C. Tănase, L. de S. Caldas, T. Schmidt, A. Tadich, B. C. C. Cowie, R. K. Chellappan, J. W. Wells, and S. P. Cooil. A simplified method for patterning graphene on dielectric layers, ACS Appl. Mater. Interfaces, 13, 31, 37510–37516 (2021).
• H. I. Røst, R. K. Chellappan, F. S. Strand, A. Grubišić-Čabo, B. P. Reed, M. J. Prieto, L. C. Tǎnase, L. d S. Caldas, T. Wongpinij, C. Euaruksakul, T. Schmidt, A. Tadich, B. C. C. Cowie, Z. Li, S. P. Cooil, and J. W. Wells. Low-temperature growth of graphene on a semiconductor, J. Phys. Chem. C  125, 7, 4243–4252 (2021).
• X. Song, H. Riis, Ø. Prytz, T. Finstad. Metallization of ZnSb and contact resistance. J. Appl. Phys. 130, 025107 (2021).
• K. Spustova, E.S. Köksal, A. Ainla, and I. Gözen. Subcompartmentalization and pseudo-division of model protocells. Small 17, 2005320 (2021).
• T. Tengchaisri, D. Bootkul, S. Intarasiri, U. Tippawan, and A. Kuznetsov. Coloration changes in natural ruby induced by oxygen ion implants correlated with cathodoluminescence data. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 502, 29-36 (2021).

• A. Zaborowska, L. Kurpaska, M. Clozel, E.J. Olivier, J.H. O'Connell, M. Vanazzi, F. Di Fonzo, A. Azarov, I. Jóźwik, M. Frelek-Kozak, R. Diduszko, J.H. Neethling, J. Jagielski. Absolute radiation tolerance of amorphous alumina coatings at room temperature. Ceram. Int. 47, 34740-34750 (2021).

  2020  

• T. Aarholt, Y.K. Frodason, and Ø. Prytz. Imaging defect complexes in scanning transmission electron microscopy: Impact of depth, structural relaxation, and temperature investigated by simulations. Ultramicroscopy 209, 112884 (2020).
• S. Abad, G.C. Vasquez, L. Vines, and R. Ranchal. Use of Ga₂O₃[1 0 0] monocrystals as substrates for the synthesis of GaFeO₃ thin films. Materials Letters 261, 126949 (2020).
• A. Ali, O. Koybasi, W. Xing, D.N. Wright, D. Varandani, T. Taniguchi, K. Watanabe, B.R. Mehta, B. Belle. Single digit parts-per-billion NOx detection using MoS2/hBN transistors. Sens. Actuator A Phys. 315 112247 (2020).
• C.  Abinaya, K. Bethke, V. Andrei, J. Baumann, B. Pollakowski-Herrmann, B. Kanngießer, B. Beckhoff, G.C. Vasquez, J. Mayandi, T. Finstad, and K. Rademann. The effect of post-deposition annealing conditions on structural and thermoelectric properties of sputtered copper oxide films. RSC Adv 10, 29394-29401 (2020).  
• M.E. Bathen, A. Galeckas, J. Coutinho, and L. Vines. Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC. Journal of Applied Physics 127, 085701 (2020).
• M.E. Bathen, M. Linnarsson, M. Ghezellou, J. Ul Hassan, and L. Vines. Influence of carbon cap on self-diffusion in silicon carbide. Crystals 10(9), 752 (2020).
• M.E. Bathen, L. Vines, and J. Coutinho. First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC. J. Phys.: Condens. Matter 33, 075502 (2020). 
• J. Bonkerud, C. Zimmermann, P.M. Weiser, T. Aarholt, E.F. Verhoeven, L. Vines, E. Monakhov, and F. Herklotz. Fabrication and characterization of Schottky barrier diodes on rutile TiO₂. Mater. Res. Express 7, 065903 (2020).
• J. Borgersen, L. Vines, Y.K. Frodason, A. Kuznetsov, H. von Wenckstern, M. Grundmann, M. Allen, J. Zúñiga-Pérez, and K.M. Johansen. Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials. J. Phys.: Condens. Matter 32, 505701 (2020).
• K. Bazioti, V.S. Olsen, A. Kuznetsov, L. Vines, and Ø. Prytz. Formation of N₂ bubbles along grain boundaries in (ZnO)_1−x(GaN)_x: nanoscale STEM-EELS studies. Phys. Chem. Chem. Phys 22, 3779-3783 (2020).
• Y.K. Frodason, K. M. Johansen, L. Vines, and J. B. Varley. Self-trapped hole and impurity-related broad luminescence in β-Ga₂O₃. Journal of Applied Physics 127, 075701 (2020).
• D. Gogova-Petrova, V.S. Olsen, K. Bazioti, I.-H. Lee, Ø. Prytz, L. Vines, and A. Kuznetsov. High electron mobility single-crystalline ZnSnN₂ on ZnO (0001) substrates. CrystEngComm 22, 6268-6274 (2020).
• S. Grini, H. Aboulfadl, N. Ross, C. Persson, C. Platzer-Björkman, M. Thuvander, and L. Vines, Lasse. Dynamic impurity redistributions in Kesterite absorbers. Phys. Status Solidi B 257, 2000062 (2020).
• R.M. Karsthof, M.E. Bathen, A. Galeckas, and L. Vines. Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Phys. Rev. B 102, 184111 (2020).
• R. Kumar, K. Bergum, H.N. Riise, E. Monakhov, A. Galeckas, and B.G. Svensson. Impact of post annealing and hydrogen implantation on functional properties of Cu₂O thin films for photovoltaic applications. Journal of Alloys and Compounds 825, 153982 (2020).
• J.N. Kvalvik, J. Borgersen, P.-A.Hansen, and O. Nilsen. Area-selective atomic layer deposition of molybdenum oxide. Journal of Vacuum Science & Technology A 38, 052408 (2020).
• J. Mayandi, T. Finstad, R. Venkatesan, P. Vajeeston, S. Karazhanov, and V. Venkatachalapathy. Carbon-dioxide as annealing atmosphere to retain the electrical properties of indium-tin oxide. Materials Letters 276, 128195 (2020).
• J. Müting, V. Bobal, T. Neset Sky, L. Vines, and U. Grossner. Lateral straggling of implanted aluminum in 4H-SiC. Appl. Phys. Lett 116, 012101 (2020).
• V.M. Reinertsen, P.M. Weiser, Y.K. Frodason, M.E. Bathen, L. Vines, and K.M. Johansen. Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals. Appl. Phys. Lett 117, 232106 (2020).
• G.C. Vasquez, M.E. Bathen, A. Galeckas, K. Bazioti, K.M. Johansen, D. Maestre, A. Cremades, Ø. Prytz, A.M. Moe, A. Kuznetsov, and L. Vines. Strain modulation of Si vacancy emission from SiC micro- and nanoparticles. Nano Lett 20, 8689-8695 (2020).
• G.C. Vasquez, K.M. Johansen, A. Galeckas, L. Vines, and B.G. Svensson. Optical signatures of single ion tracks in ZnO. Nanoscale Adv 2, 724-733 (2020).
• P.M. Weiser, E. Monakhov, H. Haug, M.S. Wiig, and R. Søndenå. Hydrogen-related defects measured by infrared spectroscopy in multicrystalline silicon wafers throughout an illuminated annealing process. Journal of Applied Physics 127, 065703 (2020).
• J. Woerle, M.E. Bathen, T. Prokscha, A. Galeckas, H.M.Ayedh, L. Vines, and U. Grossner. Muon interaction with negative-U and high-spin-state defects: Differentiating between C and Si vacancies in 4H-SiC. Phys. Rev. Applied 14, 054053 (2020).
• C. Zimmermann, Y.K. Frodason, A.W. Barnard, J.B. Varley, K. Irmscher, Z. Galazka, A. Karjalainen, W.E. Meyer, F.D. Auret, and L. Vines. Ti- and Fe-related charge transition levels in beta-Ga₂O₃. Appl. Phys. Lett 116, 072101 (2020).
• C. Zimmermann, Y.K. Frodason, V. Rønning, J.B. Varley, and L. Vines. Combining steady-state photo-capacitance spectra with first-principles calculations: the case of Fe and Ti in β-Ga₂O₃. New J. Phys 22, 063033 (2020).
• C. Zimmermann,V. Rønning, Y.K. Frodason, V. Bobal, L. Vines, and J.B. Varley. Primary intrinsic defects and their charge transition levels in beta-Ga₂O₃. Phys. Rev. Materials 4, 074605 (2020).
• C. Zimmermann, E.F. Verhoeven, Y.K. Frodason, P.M. Weiser, J.B. Varley, and L. Vines. Formation and control of the E₂^* center in implanted b-Ga₂O₃ by reverse-bias and zero-bias annealing. J. Phys. D: Appl. Phys 53, 464001 (2020).