Our latest publications

2021

  • M. Amati, L. Gregoratti, P. Zeller, M. Greiner, M. Scardamaglia, B. Junker, T. Russ, U. Weimar, N. Barsan, M. Favaro, A. Alharbi, I.J.T Jensen, A. Ali, B. Belle. Near ambient pressure photoelectron spectro-microscopy: from gas-solid interface to operando devices. J. Phys. D: Appl. Phys. 54, 542021 (2021).
  • A. Azarov, V. Venkatachalapathy, L. Vines, E. Monakhov, I.-H. Lee, A. Kuznetsov. Activation energy of silicon diffusion in gallium oxide: Roles of the mediating defects charge states and phase modification. Appl. Phys. Lett. 119, 182103 (2021).
  • A. Azarov, V. Venkatachalapathy, E. Monakhov, A. Kuznetsov. Dominating migration barrier for intrinsic defects in gallium oxide: Dose-rate effect measurements. Appl. Phys. Lett.  118, 232101 (2021).
  • H.M. Ayedh, K.-E. Kvamsdal, V. Bobal, A. Hallén, F.C.C. Ling, A. Kuznetsov. Carbon vacancy control in p+-n silicon carbide diodes for high voltage bipolar applications. J. Phys. D: Appl. Phys 54, 455106 (2021).
  • E.M. Baba, P.M. Weiser, E.Ö. Zayim, and S. Karazhanov. Temperature-dependent photochromic performance of yttrium oxyhydride thin films. Phys. Status Solidi RRL 15, 2000459 (2021).
  • M.E. Bathen, A. Galeckas, R.M. Karsthof, A. Delteil, V. Sallet, A. Kuznetsov, L. Vines. Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide. Phys. Rev. B. 104, 045120 (2021).
  • M.E. Bathen, L. Vines. Manipulating Single-Photon Emission from Point Defects in Diamond and Silicon Carbide. Adv. Quantum Technol. 4, 2100003 (2021).
  • A.K. Behera, C. Harris, D. Pete, C. Delker, P.E. Vullum, M. Benthem Muñiz, O. Koybasi, T. Taniguchi, K. Watanabe, B. Belle, S. Das. High-Performance and Ultralow-Noise Two-Dimensional Heterostructure Field-Effect Transistors with One-Dimensional Electrical Contacts. ACS Appl. Electron. Mater. 3, 4126--4134 (2021).
  • J. Bonkerud, C. Zimmermann, F. Herklotz, P.M. Weiser, C. Seiffert, E.F. Verhoeven, L. Vines, and E. Monakhov. Electrically-active defects in reduced and hydrogenated rutile TiO2. Semicond. Sci. Technol. 36, 014006 (2021).
  • A. Kaźmierczak-Bałata, L. Grzadziel, M. Guziewicz, V. Venkatachalapathy, A. Kuznetsov, and M. Krzywiecki. Correlations of thermal properties with grain structure, morphology, and defect balance in nanoscale polycrystalline ZnO films. Applied Surface Science 546, 149095 (2021).
  • E.S. Köksal, I. Põldsalu, H. Friis, S. Mojzsis, M. Bizzarro, I. Gözen. Spontaneous formation of prebiotic compartment colonies on Hadean Earth and pre-Noachian Mars. BioRxiv (2021)
  • J. Mayandi, A.M. Lind, M.F. Sunding, M. Schrade, A.C. Cerdeira, M.S.S Stange, M.R. Dias, B. Belle, T.G. Finstad, L. Pereira, S. Diplas, P.A. Carvalho. Partial Oxidation of High Entropy Alloys: A Route Towards Nanostructured Ferromagnets. Materialia 101250 (2021).
  • J. Mayandi, M. Schrade, P. Vajeeston, S. Ponniah, M.S.S. Stange, A.M. Lind, M.F. Sunding, D.M. Fleissner, J. Deuermeier, E. Fortunato, O.M. Løvvik, A. Ulyashin, S. Diplas, P.A. Carvalho, T.G. Finstad. High Entropy Alloy CrFeNiCoCu sputtered films. arXiv (2021).
  • J. Mayandi, R.K. Madathil, C. Abinaya, K. Bethke, V. Venkatachalapathy, K. Rademann, T.E. Norby, and T. Finstad. Al-doped ZnO prepared by co-precipitation method and its thermoelectric characteristics. Materials Letters 288, 129352 (2021).
  • M. Nyborg, A. Azarov, K. Bergum, E. Monakhov. Deposition and characterization of lithium doped direct current magnetron sputtered Cu2O films. Thin Solid Films 722, 138573 (2021).
  • I.J.T. Jensen, A. Ali, P. Zeller, A. Patrick, S.Matteo, M. Schrade, P.E. Vullum, M. Benthem Muñiz, P. Bisht, T. Taniguchi, K. Watanabe, M. Kenji; B.R. Mehta, L. Gregoratti, B. Belle. Direct Observation of Charge Transfer between NOx and Monolayer MoS2 by Operando Scanning Photoelectron Microscopy. ACS Appl. Nano Mater. 4, 3319--3324 (2021).
  • A. Kaźmierczak-Bałata, L. Grzadziel, M. Guziewicz, V. Venkatachalapathy, A. Kuznetsov, M. Krzywiecki. Correlations of thermal properties with grain structure, morphology, and defect balance in nanoscale polycrystalline ZnO films. Appl. Surf. Sci. 546, 149095 (2021).
  • V.S. Olsen, V. Øversjøen, D. Gogova-Petrova, B. Pecz, A. Galeckas, J.A. Borgersen, K. Karlsen, L. Vines, A. Kuznetsov. ZnSnN2 in Real Space and k-Space: Lattice Constants, Dislocation Density, and Optical Band Gap. Adv. Opt. Mater. 9, 2100015 (2021).
  • J.M. Polfus, M.B. Muñiz, A. Ali, D. Barragan-Yani, P.E. Vullum, M.F. Sunding, T. Taniguchi, K. Watanabe, B. Belle. Temperature-Dependent Adhesion in van der Waals Heterostructures. Adv. Mater. Interfaces 8, 2100838 (2021).
  • I. Poldsalu, E.S. Köksal, I. Gözen. Mixed fatty acid-phospholipid protocell networks. BioRxiv (2021)
  • X. Song, H. Riis, Ø. Prytz, T. Finstad. Metallization of ZnSb and contact resistance. J. Appl. Phys. 130, 025107 (2021).
  • K. Spustova, E.S. Köksal, A. Ainla, and I. Gözen. Subcompartmentalization and pseudo-division of model protocells. Small 17, 2005320 (2021).
  • A. Zaborowska, L. Kurpaska, M. Clozel, E.J. Olivier, J.H. O'Connell, M. Vanazzi, F. Di Fonzo, A. Azarov, I. Jóźwik, M. Frelek-Kozak, R. Diduszko, J.H. Neethling, J. Jagielski. Absolute radiation tolerance of amorphous alumina coatings at room temperature. Ceram. Int. 47, 34740-34750 (2021).

2020  

  • T. Aarholt, Y.K. Frodason, and Ø. Prytz. Imaging defect complexes in scanning transmission electron microscopy: Impact of depth, structural relaxation, and temperature investigated by simulations. Ultramicroscopy 209, 112884 (2020).
  • S. Abad, G.C. Vasquez, L. Vines, and R. Ranchal. Use of Ga2O3[1 0 0] monocrystals as substrates for the synthesis of GaFeO3 thin films. Materials Letters 261, 126949 (2020).
  • A. Ali, O. Koybasi, W. Xing, D.N. Wright, D. Varandani, T. Taniguchi, K. Watanabe, B.R. Mehta, B. Belle. Single digit parts-per-billion NOx detection using MoS2/hBN transistors. Sens. Actuator A Phys. 315 112247 (2020).

  • C.  Abinaya, K. Bethke, V. Andrei, J. Baumann, B. Pollakowski-Herrmann, B. Kanngießer, B. Beckhoff, G.C. Vasquez, J. Mayandi, T. Finstad, and K. Rademann. The effect of post-deposition annealing conditions on structural and thermoelectric properties of sputtered copper oxide films. RSC Adv 10, 29394-29401 (2020).  
  • M.E. Bathen, A. Galeckas, J. Coutinho, and L. Vines. Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC. Journal of Applied Physics 127, 085701 (2020).
  • M.E. Bathen, M. Linnarsson, M. Ghezellou, J. Ul Hassan, and L. Vines. Influence of carbon cap on self-diffusion in silicon carbide. Crystals 10(9), 752 (2020).
  • M.E. Bathen, L. Vines, and J. Coutinho. First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC. J. Phys.: Condens. Matter 33, 075502 (2020)
  •  J. Bonkerud, C. Zimmermann, P.M. Weiser, T. Aarholt, E.F. Verhoeven, L. Vines, E. Monakhov, and F. Herklotz. Fabrication and characterization of Schottky barrier diodes on rutile TiO2. Mater. Res. Express 7, 065903 (2020).
  • J. Borgersen, L. Vines, Y.K. Frodason, A. Kuznetsov, H. von Wenckstern, M. Grundmann, M. Allen, J. Zúñiga-Pérez, and K.M. Johansen. Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials. J. Phys.: Condens. Matter 32, 505701 (2020).
  • K. Bazioti, V.S. Olsen, A. Kuznetsov, L. Vines, and Ø. Prytz. Formation of N2 bubbles along grain boundaries in (ZnO)1−x(GaN)x: nanoscale STEM-EELS studies. Phys. Chem. Chem. Phys 22, 3779-3783 (2020).
  • Y.K. Frodason, K. M. Johansen, L. Vines, and J. B. Varley. Self-trapped hole and impurity-related broad luminescence in β-Ga2O3. Journal of Applied Physics 127, 075701 (2020).
  • D. Gogova-Petrova, V.S. Olsen, K. Bazioti, I.-H. Lee, Ø. Prytz, L. Vines, and A. Kuznetsov. High electron mobility single-crystalline ZnSnN2 on ZnO (0001) substrates. CrystEngComm 22, 6268-6274 (2020).
  • S. Grini, H. Aboulfadl, N. Ross, C. Persson, C. Platzer-Björkman, M. Thuvander, and L. Vines, Lasse. Dynamic impurity redistributions in Kesterite absorbers. Phys. Status Solidi B 257, 2000062 (2020).
  • R.M. Karsthof, M.E. Bathen, A. Galeckas, and L. Vines. Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Phys. Rev. B 102, 184111 (2020)
  • R. Kumar, K. Bergum, H.N. Riise, E. Monakhov, A. Galeckas, and B.G. Svensson. Impact of post annealing and hydrogen implantation on functional properties of Cu2O thin films for photovoltaic applications. Journal of Alloys and Compounds 825, 153982 (2020).
  • J.N. Kvalvik, J. Borgersen, P.-A.Hansen, and O. Nilsen. Area-selective atomic layer deposition of molybdenum oxide. Journal of Vacuum Science & Technology A 38, 052408 (2020).
  • J. Mayandi, T. Finstad, R. Venkatesan, P. Vajeeston, S. Karazhanov, and V. Venkatachalapathy. Carbon-dioxide as annealing atmosphere to retain the electrical properties of indium-tin oxide. Materials Letters 276, 128195 (2020).
  • J. Müting, V. Bobal, T. Neset Sky, L. Vines, and U. Grossner. Lateral straggling of implanted aluminum in 4H-SiC. Appl. Phys. Lett 116, 012101 (2020)
  • V.M. Reinertsen, P.M. Weiser, Y.K. Frodason, M.E. Bathen, L. Vines, and K.M. Johansen. Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals. Appl. Phys. Lett 117, 232106 (2020).
  • G.C. Vasquez, M.E. Bathen, A. Galeckas, K. Bazioti, K.M. Johansen, D. Maestre, A. Cremades, Ø. Prytz, A.M. Moe, A. Kuznetsov, and L. Vines. Strain modulation of Si vacancy emission from SiC micro- and nanoparticles. Nano Lett 20, 8689-8695 (2020).
  • G.C. Vasquez, K.M. Johansen, A. Galeckas, L. Vines, and B.G. Svensson. Optical signatures of single ion tracks in ZnO. Nanoscale Adv 2, 724-733 (2020).
  • P.M. Weiser, E. Monakhov, H. Haug, M.S. Wiig, and R. Søndenå. Hydrogen-related defects measured by infrared spectroscopy in multicrystalline silicon wafers throughout an illuminated annealing process. Journal of Applied Physics 127, 065703 (2020).
  • J. Woerle, M.E. Bathen, T. Prokscha, A. Galeckas, H.M.Ayedh, L. Vines, and U. Grossner. Muon interaction with negative-U and high-spin-state defects: Differentiating between C and Si vacancies in 4H-SiC. Phys. Rev. Applied 14, 054053 (2020).
  • C. Zimmermann, Y.K. Frodason, A.W. Barnard, J.B. Varley, K. Irmscher, Z. Galazka, A. Karjalainen, W.E. Meyer, F.D. Auret, and L. Vines. Ti- and Fe-related charge transition levels in beta-Ga2O3. Appl. Phys. Lett 116, 072101 (2020).
  • C. Zimmermann, Y.K. Frodason, V. Rønning, J.B. Varley, and L. Vines. Combining steady-state photo-capacitance spectra with first-principles calculations: the case of Fe and Ti in β-Ga2O3. New J. Phys 22, 063033 (2020).
  • C. Zimmermann,V. Rønning, Y.K. Frodason, V. Bobal, L. Vines, and J.B. Varley. Primary intrinsic defects and their charge transition levels in beta-Ga2O3. Phys. Rev. Materials 4, 074605 (2020)
  • C. Zimmermann, E.F. Verhoeven, Y.K. Frodason, P.M. Weiser, J.B. Varley, and L. Vines. Formation and control of the E2* center in implanted b-Ga2O3 by reverse-bias and zero-bias annealing. J. Phys. D: Appl. Phys 53, 464001 (2020).
Published May 26, 2021 9:24 PM - Last modified Nov. 5, 2021 10:09 AM