The Micro and Nanotechnology Laboratory at the University of Oslo (UiO MiNaLab) is equipped with a 3SDH-2 tandem Pelletron accelerator from National Electrostatics Corp.
Ion implantation is a near-surface materials modification process by which ions of a material are accelerated and inserted into another solid, thereby changing the physical, chemical, or electrical properties of the solid. Ion implantation is used in semiconductor device fabrication (i.e. semiconductor doping), defect studies, and metal finishing, as well as in gemological modifications.
- Target material: Vacuum compatible and sample size up to 100 mm (4 in.).
- Target heating: up to 500 °C.
- Accelerating energy: 33 keV (source acceleration) and 400 – 2000 keV (for simple charge).
- Available ion species: H, D, Li, B, C, N, Mg, Al, Si, P, Fe, Ag, Ni, Cr, Ge.
For ion implantation an operator is required. Prices are in Norwegian kroner (NOK) excl. VAT. All prices are subject to change.
|User Category||Price with operator/hour|
The reduced fees for start-up companies are available for the first 24 months after start-up. Training is not an option.