Both instruments are equipped with a solid-state pulsed laser operating a fixed wavelength of 532 nm that is suitable for both scribing and cutting. The sample stages provide a maximum scribing area of 15 x 15 cm2 and 16 x 16 cm2 for the Roffin and ELAS systems, respectively, which are large enough to accommodate commercial 6-inch wafers. The software on the two systems allows adjustment of select laser parameters, including the peak power, cutting speed, and repetition rate, to ensure a clean cut while minimizing damage at the edges. For the Roffin system, marking lines and patterns are visualized prior to execution of the cut using a low power HeNe laser. In addition, the HeNe laser can be used to help align the sample on the stage.
Instrument Features (Roffin-SINAR)
- Solid-state nanosecond pulsed laser (Class 3), operating at 532 nm with adjustable peak power (up to 16 W) and short (~5 minutes) warm up time.
- Adjustable laser focus – z-axis adjustment in increments of 0.01 mm, for cutting through thick (~1 – 2 mm) samples.
- Secondary HeNe laser – visualize the desired pattern on the sample prior to cutting.
- Large sample stage (15 x 15 cm2) permits scribing of large wafers in a single run.
Instrument Features (ELAS Master Mini)
- Solid-state nanosecond pulsed laser (Class 3), operating at 532 nm with adjustable peak power (up to 20 W), max pulse energy up to 1.2 mJ and short (~5 minutes) warm up time.
- Automated optical system – z-axis alignment (laser focus) and sample alignment are automated by an optical camera system.
- Secondary HeNe laser – visualize the desired pattern on the sample prior to cutting.
- Large sample stage (16 x 16 cm2) permits scribing of large wafers in a single run.
Materials
In general, samples should be no more than 2 mm thick. Routine cutting processes have been developed for a variety of materials, including:
- Fused silica and quartz (for thin film substrates). Recipes available on both systems.
- Mono- and multi-crystalline silicon. Recipes available on both systems.
- Transparent oxide semiconductors, including monoclinic gallium oxide (Ga2O3), both (-201) and (010) surface orientations, wurtzite zinc oxide (ZnO), and sapphire (Al2O3). Recipes available on both systems.
- Untested materials. For new untested materials, the Roffin system should be used.
Due to potential damage to the machine, scribing or cutting of materials with highly reflective surfaces is not permitted. For untested materials, please contact the Lab Manager to discuss your needs.
Prices
The laser cutter is available for rent with or without an operator. Prices are in Norwegian kroner (NOK) excl. VAT. All prices are subject to change.
| User Category | Price without operator/hour | Price with operator/hour |
|---|---|---|
| Academia | 800 NOK | 1550 NOK |
| Start-up | 1000 NOK | 2100 NOK |
| Industry | 1200 NOK | 2300 NOK |
The reduced fees for start-up companies are available for the first 24 months after start-up. Training costs are currently covered by NorFab.
Contact
- Simon Phillip Cooil, Lab Manager
- Eirini Zacharaki, Research Infrastructure Coordinator