PECVD is a process used to deposit thin films from a gas state to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of plasma from the reacting gases. The plasma is created by RF frequency discharge between two electrodes, the space between which is filled with the reacting gases.
Examples of Available Growth Protocols
- SiO2 (Silicon dioxide) with deposition rate ~36 nm/min.
- Si3N4 (Silicon nitride) with deposition rate ~9 nm/min.
- SiON (Oxynitride).
- a-Si (Amorphous silicon).
- SiC (Silicon carbide).
Instrument Features
- Chamber accommodating samples up to 305 mm in diameter with a 250 mm diameter growth area.
- Mixed frequency generator (300W at 13.56 MHz and 500W at 187 kHz) for the deposition of low stress films.
- Uniformity < 5% on 4 in. wafer.
- Available gases are N2, SiH4 (2% in N2 and 5% in Ar), NH3, CF4 and N2O.
- The lower electrode is heated up to 300 oC.
- Material restrictions: Polymers and organic materials are not allowed in the chamber; Method not suited for temperature sensitive materials.
Prices
The plasma-enhanced chemical vapor deposition (PECVD) system is available for rent with or without an operator.
| User Category | Price without operator/hour | Price with operator/hour |
|---|---|---|
| Academia | 800 NOK | 1550 NOK |
| Start-up | 1000 NOK | 2100 NOK |
| Industry | 1200 NOK | 2300 NOK |
Prices are in Norwegian kroner (NOK) excl. VAT. All prices are subject to change. The reduced fees for start-up companies are available for the first 24 months after start-up. Training costs are currently covered by NorFab.
Contact
- Simon Phillip Cooil, Lab Manager
- Eirini Zacharaki, Research Infrastructure Coordinator