Our latest publications

2021

    • E.M. Baba, P.M. Weiser, E.Ö. Zayim, and S. Karazhanov. Temperature-dependent photochromic performance of yttrium oxyhydride thin films. Phys. Status Solidi RRL 15, 2000459 (2021).
    • J. Bonkerud, C. Zimmermann, F. Herklotz, P.M. Weiser, C. Seiffert, E.F. Verhoeven, L. Vines, and E. Monakhov. Electrically-active defects in reduced and hydrogenated rutile TiO2. Semicond. Sci. Technol. 36, 014006 (2021).
    • A. Kaźmierczak-Bałata, L. Grzadziel, M. Guziewicz, V. Venkatachalapathy, A. Kuznetsov, and M. Krzywiecki. Correlations of thermal properties with grain structure, morphology, and defect balance in nanoscale polycrystalline ZnO films. Applied Surface Science 546, 149095 (2021).
    • E.S. Köksal, I. Põldsalu, H. Friis, S. Mojzsis, M. Bizzarro, I. Gözen. Spontaneous formation of prebiotic compartment colonies on Hadean Earth and pre-Noachian Mars. BioRxiv (2021)
    • J. Mayandi, R.K. Madathil, C. Abinaya, K. Bethke, V. Venkatachalapathy, K. Rademann, T.E. Norby, and T. Finstad. Al-doped ZnO prepared by co-precipitation method and its thermoelectric characteristics. Materials Letters 288, 129352 (2021).
    • I. Poldsalu, E.S. Köksal, I. Gözen. Mixed fatty acid-phospholipid protocell networks. BioRxiv (2021)
    • K. Spustova, E.S. Köksal, A. Ainla, and I. Gözen. Subcompartmentalization and pseudo-division of model protocells. Small 17, 2005320 (2021).

    2020  

     

    • T. Aarholt, Y.K. Frodason, and Ø. Prytz. Imaging defect complexes in scanning transmission electron microscopy: Impact of depth, structural relaxation, and temperature investigated by simulations. Ultramicroscopy 209, 112884 (2020).
    • S. Abad, G.C. Vasquez, L. Vines, and R. Ranchal. Use of Ga2O3[1 0 0] monocrystals as substrates for the synthesis of GaFeO3 thin films. Materials Letters 261, 126949 (2020).
    • C.  Abinaya, K. Bethke, V. Andrei, J. Baumann, B. Pollakowski-Herrmann, B. Kanngießer, B. Beckhoff, G.C. Vasquez, J. Mayandi, T. Finstad, and K. Rademann. The effect of post-deposition annealing conditions on structural and thermoelectric properties of sputtered copper oxide films. RSC Adv 10, 29394-29401 (2020).  
    • M.E. Bathen, A. Galeckas, J. Coutinho, and L. Vines. Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC. Journal of Applied Physics 127, 085701 (2020).
    • M.E. Bathen, M. Linnarsson, M. Ghezellou, J. Ul Hassan, and L. Vines. Influence of carbon cap on self-diffusion in silicon carbide. Crystals 10(9), 752 (2020).
    • M.E. Bathen, L. Vines, and J. Coutinho. First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC. J. Phys.: Condens. Matter 33, 075502 (2020)
    •  J. Bonkerud, C. Zimmermann, P.M. Weiser, T. Aarholt, E.F. Verhoeven, L. Vines, E. Monakhov, and F. Herklotz. Fabrication and characterization of Schottky barrier diodes on rutile TiO2. Mater. Res. Express 7, 065903 (2020).
    • J. Borgersen, L. Vines, Y.K. Frodason, A. Kuznetsov, H. von Wenckstern, M. Grundmann, M. Allen, J. Zúñiga-Pérez, and K.M. Johansen. Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials. J. Phys.: Condens. Matter 32, 505701 (2020).
    • K. Bazioti, V.S. Olsen, A. Kuznetsov, L. Vines, and Ø. Prytz. Formation of N2 bubbles along grain boundaries in (ZnO)1−x(GaN)x: nanoscale STEM-EELS studies. Phys. Chem. Chem. Phys 22, 3779-3783 (2020).
    • Y.K. Frodason, K. M. Johansen, L. Vines, and J. B. Varley. Self-trapped hole and impurity-related broad luminescence in β-Ga2O3. Journal of Applied Physics 127, 075701 (2020).
    • D. Gogova-Petrova, V.S. Olsen, K. Bazioti, I.-H. Lee, Ø. Prytz, L. Vines, and A. Kuznetsov. High electron mobility single-crystalline ZnSnN2 on ZnO (0001) substrates. CrystEngComm 22, 6268-6274 (2020).
    • S. Grini, H. Aboulfadl, N. Ross, C. Persson, C. Platzer-Björkman, M. Thuvander, and L. Vines, Lasse. Dynamic impurity redistributions in Kesterite absorbers. Phys. Status Solidi B 257, 2000062 (2020).
    • R.M. Karsthof, M.E. Bathen, A. Galeckas, and L. Vines. Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Phys. Rev. B 102, 184111 (2020)
    • R. Kumar, K. Bergum, H.N. Riise, E. Monakhov, A. Galeckas, and B.G. Svensson. Impact of post annealing and hydrogen implantation on functional properties of Cu2O thin films for photovoltaic applications. Journal of Alloys and Compounds 825, 153982 (2020).
    • J.N. Kvalvik, J. Borgersen, P.-A.Hansen, and O. Nilsen. Area-selective atomic layer deposition of molybdenum oxide. Journal of Vacuum Science & Technology A 38, 052408 (2020).
    • J. Mayandi, T. Finstad, R. Venkatesan, P. Vajeeston, S. Karazhanov, and V. Venkatachalapathy. Carbon-dioxide as annealing atmosphere to retain the electrical properties of indium-tin oxide. Materials Letters 276, 128195 (2020).
    • J. Müting, V. Bobal, T. Neset Sky, L. Vines, and U. Grossner. Lateral straggling of implanted aluminum in 4H-SiC. Appl. Phys. Lett 116, 012101 (2020)
    • V.M. Reinertsen, P.M. Weiser, Y.K. Frodason, M.E. Bathen, L. Vines, and K.M. Johansen. Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals. Appl. Phys. Lett 117, 232106 (2020).
    • G.C. Vasquez, M.E. Bathen, A. Galeckas, K. Bazioti, K.M. Johansen, D. Maestre, A. Cremades, Ø. Prytz, A.M. Moe, A. Kuznetsov, and L. Vines. Strain modulation of Si vacancy emission from SiC micro- and nanoparticles. Nano Lett 20, 8689-8695 (2020).
    • G.C. Vasquez, K.M. Johansen, A. Galeckas, L. Vines, and B.G. Svensson. Optical signatures of single ion tracks in ZnO. Nanoscale Adv 2, 724-733 (2020).
    • P.M. Weiser, E. Monakhov, H. Haug, M.S. Wiig, and R. Søndenå. Hydrogen-related defects measured by infrared spectroscopy in multicrystalline silicon wafers throughout an illuminated annealing process. Journal of Applied Physics 127, 065703 (2020).
    • J. Woerle, M.E. Bathen, T. Prokscha, A. Galeckas, H.M.Ayedh, L. Vines, and U. Grossner. Muon interaction with negative-U and high-spin-state defects: Differentiating between C and Si vacancies in 4H-SiC. Phys. Rev. Applied 14, 054053 (2020).
    • C. Zimmermann, Y.K. Frodason, A.W. Barnard, J.B. Varley, K. Irmscher, Z. Galazka, A. Karjalainen, W.E. Meyer, F.D. Auret, and L. Vines. Ti- and Fe-related charge transition levels in beta-Ga2O3. Appl. Phys. Lett 116, 072101 (2020).
    • C. Zimmermann, Y.K. Frodason, V. Rønning, J.B. Varley, and L. Vines. Combining steady-state photo-capacitance spectra with first-principles calculations: the case of Fe and Ti in β-Ga2O3. New J. Phys 22, 063033 (2020).
    • C. Zimmermann,V. Rønning, Y.K. Frodason, V. Bobal, L. Vines, and J.B. Varley. Primary intrinsic defects and their charge transition levels in beta-Ga2O3. Phys. Rev. Materials 4, 074605 (2020)
    • C. Zimmermann, E.F. Verhoeven, Y.K. Frodason, P.M. Weiser, J.B. Varley, and L. Vines. Formation and control of the E2* center in implanted b-Ga2O3 by reverse-bias and zero-bias annealing. J. Phys. D: Appl. Phys 53, 464001 (2020).
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Published May 26, 2021 9:24 PM - Last modified June 4, 2021 3:21 PM