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Chakresh Jain

Room 3218
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Visiting address Gaustadalléen 23A Kristen Nygaards hus 0373 OSLO
Postal address Postboks 1048 Blindern 0316 Oslo

Academic interests

My research focuses on the development and characterization of radiation-hard silicon detectors for high-energy physics applications. I am particularly interested in TCAD simulations of semiconductor devices, radiation damage modeling, and the optimization of novel configurations of silicon based sensors for high resolution X-ray imaging and for precision timing and tracking in high energy physics experiments.

Background

I obtained my PhD in Physics from the University of Delhi, India, where my research focused on TCAD simulations and radiation damage modeling of silicon detectors used in high-energy physics experiments. My work involved the development of a comprehensive radiation damage model for neutron-irradiated silicon sensors and related optimization studies. I have extensive experience in the electrical characterization of segmented silicon detectors, including measurements of global (I–V, C–V), strip and inter-strip parameters. Before joining the University of Oslo, I collaborated with several international groups, including CERN, on the development and qualification of radiation-hard silicon sensors for next-generation particle detectors.

Positions held

  • Postdoctoral Research Fellow / Postdoktor, University of Oslo (September 2025-Present)
  • Postdoctoral Research Associate (RA-1), University of Delhi (June 2023-September 2025)
Tags: SMN, LENS

Publications

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Published Sep. 8, 2025 3:42 PM - Last modified Oct. 7, 2025 11:05 AM