Oliver Moen-Duran

Research interests

I study defects at the interface between silicon carbide (SiC) and silicon dioxide (SiO₂). Such interfaces are central to SiC-based power electronic devices, and unwanted defects can significantly degrade device reliability and performance. On the other hand, certain point defects in semiconductors can be highly valuable for quantum technology, where they can serve as stable qubits or sensitive quantum sensors.

In my research I therefore work to:

• develop and optimize fabrication of SiC-SiO₂ interfaces with control over defect types and defect concentrations,
• characterize these defects using a combination of optical and electrical techniques,
• identify the specific defects present at the interface.

This provides insights that are important both for improving power devices and for exploiting defects in quantum-technology applications.

Teaching

University of Oslo:

FYS3280/4280: Semiconductor components, Autumn 2024

Background

M.Sc. Materialscience for energy- og nanotechnology at UiO (2023-2025)

B.Sc. Materialscience for energy- og nanotechnology at UiO (2020-2023)