Aleksei Grigorev

Researcher - High Energy Physics

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Email aleksei.grigorev@fys.uio.no

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Visiting address Kristen Nygaards hus Gaustadalleen 23A 0373 OSLO

Postal address Postboks 1048 Blindern 0316 Oslo

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Academic interests

Defect engineering. Point defects in silicon, their electrical and optical characterization.

PhD Student. Current project: OxSil (Oxygen in Silicon) - oxygen-related point defects in solar-grade silicon.

Master degree: University of Manchester (UK), MSc "Renewable Energy and Clean Technology".

Bachelor degree: Chelyabinsk State University (Russia), specialist in physics, specialization "Physics of Semiconductors and Electronics".

Tags: SMN, LENS

Ayedh, Hussein Mohammed Hussein; Grigorev, Aleksei; Galeckas, Augustinas; Svensson, Bengt Gunnar & Monakhov, Eduard (2019). Annealing Kinetics of the Interstitial Carbon–Dioxygen Complex in Silicon. Physica Status Solidi (a) applications and materials science. ISSN 1862-6300. 216(14), p. 1–5. doi: 10.1002/pssa.201800986.

Published Oct. 28, 2016 12:44 PM - Last modified Mar. 31, 2020 11:34 AM