michaeag

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Academic interests

Functional thin-films, Nanomaterials, Solid-state physics/chemistry, Solar cells, Sensors, Luminescence, Neutron detection, Optical Materials, Passivation

Current Project: INDet (UiO/SINTEF)

Aim of the project is to enhance the sensitivity of 3D neutron detectors by optimizing geometry, materials and structure. My contribution to the project is to deposit and characterize thin films used to passivate the interface between the silicon and neutron absorber.

Background

Bachelor og master in materials, energy og nanotechnology from the University of Oslo. Ph. D in light converting materials from the University of Oslo. Spent one year researching and developing an optical temperature sensor. Worked half a year as a researcher for Baldur Coatings AS with deposition and characterization of potenially superconducting thin-films.

Tags: SMN, LENS

Getz, Michael Norderhaug; Koybasi, Ozhan; Edhborg, Fredrik; Nordseth, Ørnulf; Hesse, Steven & Pohl, Tobias [Show all 11 contributors for this article] (2026). Improving UV Stability of SiO<inf>2</inf>/SiN<inf>x</inf>-Passivated Silicon Photodiodes Through Shallow Junction Implantation and Oxide Regrowth. Sensors. 26(13). doi: 10.3390/s26133991. Full text in Research Archive
Getz, Michael Norderhaug; Ellingsen, Abélia; Dahl-Hansen, Runar Plunnecke; Escobedo-Cousin, Enrique & Vereshchagina, Elizaveta (2026). Dielectric breakdown and reliability of thin film insulators for high-voltage microelectromechanical systems applications. Thin Solid Films. ISSN 0040-6090. 836. doi: 10.1016/j.tsf.2026.140876. Full text in Research Archive Show summary
The growing demand for miniaturized and digitally integrated systems has accelerated the adoption of microelectromechanical systems (MEMS) across high-voltage applications, including electroseparation, microplasmas, and electrospraying. As these applications often operate in the kV range, dielectric reliability becomes a critical design consideration. This study presents a controlled, side-by-side comparison of breakdown behaviour, leakage current, and process compatibility of thermal SiO2, plasma-enhanced chemical vapour deposition SiO2, Low-pressure chemical vapour deposition SiNx, and atomic layer deposition (ALD)-Al2O3 using capacitive test structures with comparable film thicknesses. Thermal SiO2 exhibited the highest dielectric strength, reaching high fields of up to 24 MV/cm for a 54 nm dry oxide, although its ≥1000 °C processing temperature limits post-metallization compatibility. Among low-temperature options, ALD-Al2O3 demonstrated the most promising performance, with the best-performing process variation achieving a median breakdown field of 14.8 MV/cm and a median leakage current of 11 nA/cm² at 8 MV/cm for a 61 nm film deposited at 220 °C and annealed at 450 °C. These values exceed those reported for comparable thicknesses, highlighting the sensitivity of dielectric performance to both deposition and annealing conditions. The findings provide practical guidance for selecting dielectric materials that ensure substrate insulation reliability in high-voltage MEMS applications, balancing electrical performance with fabrication constraints.
Dullo, Firehun Tsige; Jayakumar, Nikhil; Getz, Michael Norderhaug; Herbjørnrød, Aina Kristin; Dirdal, Christopher Andrew & Wright, Daniel Nilsen [Show all 10 contributors for this article] (2025). Low-loss, low-background aluminum oxide waveguide platform for broad-spectrum on-chip microscopy. Optics Letters. ISSN 0146-9592. 50(7), p. 2159–2162. doi: 10.1364/OL.551736. Full text in Research Archive Show summary
A versatile wide-spectrum photonic integrated circuit (PIC) platform, spanning from ultraviolet (UV) to infrared (IR) wavelengths, is essential for advancing on-chip optical microscopy and spectroscopy applications. The key desirable requirements for PICs are low-loss, low-autofluorescence background signals, and high-refractive index contrast (HIC) to enable compact designs. Here, we present a low-loss, low-autofluorescence aluminum oxide (Al2O3) waveguide platform developed using atomic layer deposition (ALD). At 405 nm, the Al2O3 strip waveguide exhibits an autofluorescence background approximately 200 times lower than silicon nitride (Si3N4) and a propagation loss of less than 0.5 dB/cm. We demonstrate the suitability of the Al2O3 platform for multicolor on-chip total internal reflection fluorescence (TIRF) and super-resolution optical microscopy. The proposed Al2O3 platform offers a promising solution for highly sensitive on-chip bioimaging and spectroscopy applications.
Povoli, Marco; Kok, Angela Chun Ying; Koybasi, Ozhan; Getz, Michael Norderhaug; O'Neill, George & Röhrich, Dieter [Show all 15 contributors for this article] (2023). 3D silicon detectors for neutron imaging applications. Journal of Instrumentation (JINST). 18, p. 1–12. doi: 10.1088/1748-0221/18/01/C01056. Full text in Research Archive Show summary
Neutron detection is of great importance in many fields spanning from scientific research, to nuclear science, and to medical application. The development of silicon-based neutron detectors with enhanced neutron detection efficiency can offer several advantages such as spatial resolution, enhanced dynamic range and background discrimination. In this work, increased detection efficiency is pursued by fabricating high aspect ratio 3D micro-structures filled with neutron converting materials (B4C) on planar silicon detectors. An in-depth feasibility study was carried out in all aspects of the sensor fabrication technology. Passivation of the etched structures was studied in detail, to ensure good electrical performance. The conformal deposition of B4C with a newly developed process showed excellent results. Preliminary electrical characterisation of the completed devices is promising, and detectors have been mounted on dedicated boards in view of the upcoming tests with neutrons.
Getz, Michael Norderhaug; Povoli, Marco; Koybasi, Ozhan; Slavicek, Tomas & Monakhov, Eduard (2023). Gamma-radiation hardness and long-term stability of ALD-Al2O3 surface passivated Si. Journal of Applied Physics. ISSN 0021-8979. 133(15). doi: 10.1063/5.0143013. Full text in Research Archive Show summary
Al2O3 has emerged as the surface passivation material of choice for p-type silicon in photovoltaics and has also become a candidate for passivating Si-based radiation sensors. However, the surface passivation of Al2O3 has been shown to degrade when exposed to gamma-radiation, making it of interest to determine methods of depositing Al2O3 that minimize the radiation-induced degradation on the surface passivation. In this study, we investigate the long-term stability and gamma-radiation hardness of Al2O3 prepared using the TMA+H2O+O3 precursor combination and how the pretreatment, the deposition temperature, and the film thickness affect the density of interface states, Dit, and fixed oxide charge, Qfix, before and after gamma-irradiation. We find that the surface saturation current density, J0s, of silicon passivated by Al2O3 increases after annealing but stabilizes over time depending on the Al2O3 thickness. Samples with thicknesses of &lt;20 nm stabilize within hours, while those with &gt;60 nm stabilize over days. J0s stabilizes at lower values with increased Al2O3 thickness. After exposure to 1 Mrad gamma-radiation, the samples still exhibit low Dit and high Qfix, with the best performing sample having a Dit of 1.5 × 1010 eV−1 cm−2 and a Qfix of −3.1 × 1012 cm−2. The deposition temperature appears to indirectly affect radiation hardness, owing to its impact on the hydrogen concentration in the film and at the Si–SiOx–Al2O3 interface. Lifetime measurements after irradiation indicate that Al2O3 still passivates the surface effectively. The carrier lifetime and Qfix can largely be recovered by annealing samples in O2 at 435 °C.
Getz, Michael Norderhaug; Povoli, Marco & Monakhov, Eduard (2022). Improving ALD-Al2O3 Surface Passivation of Si Utilizing Pre-Existing SiOx. IEEE Journal of Photovoltaics. ISSN 2156-3381. 12(4), p. 929–936. doi: 10.1109/JPHOTOV.2022.3169985. Full text in Research Archive Show summary
Al 2 O 3 has rapidly become the surface passivation material of choice for p + layers of solar cells because of its high negative fixed charge, good long-term and thermal stability, and no parasitic absorption. In this article, the surface saturation current density, fixed charge, and interface state density are compared for Al 2 O 3 deposited on Si substrates where the pre-existing out-of-the-box SiO x layer was not removed, with substrates where the SiO x was removed by hydrofluoric acid. The depositions are performed by atomic layer deposition at temperatures in the 150–300 °C range, using trimethylaluminium, H 2 O, and O 3 as precursors. The samples where the native oxide was not removed achieve a higher level of surface passivation for every tested deposition temperature, with the sample deposited at 200 °C exhibiting a surface saturation current density of only 0.9 fA/cm 2 after annealing, a fixed charge of −4.2 × 10 12 cm −2 , and a density of interface states of 9.8 × 10 9 cm −2 eV −1 . Capacitance and conductance voltage characteristics reveal a strong correlation between the surface saturation current density and the density of interface states and fixed charges. It is also determined that the long-term stability of the surface passivation depends on the deposition temperature, with higher deposition temperatures resulting in improved long-term stability. The results indicate that H-terminated Si prior to Al 2 O 3 deposition may have a detrimental effect on the surface passivation.
Koybasi, Ozhan; Nordseth, Ørnulf; Tran, Trinh; Povoli, Marco; Rajteri, Mauro & Pepe, Carlo [Show all 14 contributors for this article] (2021). High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx. Sensors. 21(23). doi: 10.3390/s21237807. Full text in Research Archive Show summary
We performed a systematic study involving simulation and experimental techniques to develop induced-junction silicon photodetectors passivated with thermally grown SiO2 and plasma-enhanced chemical vapor deposited (PECVD) SiNx thin films that show a record high quantum efficiency. We investigated PECVD SiNx passivation and optimized the film deposition conditions to minimize the recombination losses at the silicon–dielectric interface as well as optical losses. Depositions with varied process parameters were carried out on test samples, followed by measurements of minority carrier lifetime, fixed charge density, and optical absorbance and reflectance. Subsequently, the surface recombination velocity, which is the limiting factor for internal quantum deficiency (IQD), was obtained for different film depositions via 2D simulations where the measured effective lifetime, fixed charge density, and substrate parameters were used as input. The quantum deficiency of induced-junction photodiodes that would be fabricated with a surface passivation of given characteristics was then estimated using improved 3D simulation models. A batch of induced-junction photodiodes was fabricated based on the passivation optimizations performed on test samples and predictions of simulations. Photodiodes passivated with PECVD SiNx film as well as with a stack of thermally grown SiO2 and PECVD SiNx films were fabricated. The photodiodes were assembled as light-trap detector with 7-reflections and their efficiency was tested with respect to a reference Predictable Quantum Efficient Detector (PQED) of known external quantum deficiency. The preliminary measurement results show that PQEDs based on our improved photodiodes passivated with stack of SiO2/SiNx have negligible quantum deficiencies with IQDs down to 1 ppm within 30 ppm measurement uncertainty.
Getz, Michael; Povoli, Marco & Monakhov, Eduard (2021). Effect of the native oxide on the Surface Passivation of Si by Al2O3. Journal of Applied Physics. ISSN 0021-8979. 129(20). doi: 10.1063/5.0051215. Full text in Research Archive Show summary
The effect of the native silicon oxide layer on the passivation properties of Al2O3 on p-type Si surfaces has been investigated. This was done by comparing effective carrier lifetime, surface saturation current density, fixed charge, and density of interface states of samples, where the native oxide was not removed prior to Al2O3 passivation, with samples subjected to a 3 min HF-dip. The sample with the native oxide exhibits excellent surface passivation post-annealing, with a surface saturation current density of 13 fA/cm2 and significantly longer effective lifetime compared to the sample, where the native oxide was removed. Capacitance–voltage measurements of a sample with the native oxide revealed a remarkably low density of interface states (1010 eV−1 cm−2), almost three times lower than a sample where the native oxide was removed prior to Al2O3 deposition. The results indicate that a thin layer of native oxide improves the Al2O3 surface passivation of silicon.
Getz, Michael; Nilsen, Ola & Hansen, Per-Anders Stensby (2019). Sensors for optical thermometry based on luminescence from layered YVO4: Ln3+ (Ln = Nd, Sm, Eu, Dy, Ho, Er, Tm, Yb) thin films made by atomic layer deposition. Scientific Reports. 9(1). doi: 10.1038/s41598-019-46694-8. Full text in Research Archive
Getz, Michael; Hansen, Per-Anders; Fjellvåg, Helmer & Nilsen, Ola (2017). Luminescent properties of europium titanium phosphate thin films deposited by atomic layer deposition. RSC Advances. 7(13), p. 8051–8059. doi: 10.1039/c6ra27644j. Full text in Research Archive Show summary
In the present contribution we assess the luminescent properties of amorphous europium titanium phosphate thin films. The films have been deposited by atomic layer deposition, using the precursor combinations Eu(thd)3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and O3, TiCl4 and H2O, and Me3PO4, H2O and O3 at a deposition temperature of 300 °C. UV light is absorbed in the (TiO6)8− complex and subsequently transferred to Eu3+, from which characteristic visible red emission takes place. The inclusion of phosphate is expected to reduce the symmetry around Eu3+ compared to the pure oxide structure, which should increase the f–f transition rate and improve the luminescence efficiency. The as deposited samples display a high degree of photobleaching when subjected to UV or X-rays. The bleaching rate has been quantified for the as deposited samples and can be controlled by adjusting the Ti-content in the samples. Annealing the samples at 500–700 °C increases both the photostability and the luminescence of all compositions, while annealing at 800 °C and above quenches the Eu3+ luminescence. Annealing at 1000 °C results in a broad NIR emission centred around 820 nm for most of the samples. The structure, roughness, thickness and composition of the deposited films have been studied by X-ray diffraction, atomic force microscopy, ellipsometry, and X-ray fluorescence, respectively. The optical properties have been characterized with excitation and photoluminescence spectroscopy and spectroscopic ellipsometry, while field emission scanning electron microscopy has been used to determine the morphology of the annealed samples.
Getz, Michael; Hansen, Per-Anders Stensby; Fjellvåg, Øystein Slagtern; Ahmed, Mohammed Amin Karim; Fjellvåg, Helmer & Nilsen, Ola (2017). Intense NIR emission in YVO4:Yb3+ thin films by atomic layer deposition. Journal of Materials Chemistry C. ISSN 2050-7526. 5(33), p. 8572–8578. doi: 10.1039/c7tc02135f. Full text in Research Archive Show summary
We demonstrate controlled deposition by atomic layer deposition of YVO4:Yb3+ thin films exhibiting an intense NIR emission under UV excitation after post-deposition annealing at 1000 °C. The samples are deposited using the precursor combinations Yb(thd)3, Y(thd)3, and VO(thd)2 with O3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) at deposition temperatures between 260 and 300 °C. The NIR emission is expected to be due to a quantum splitting process in which one UV photon is converted to two NIR photons. In the present contribution we assess the efficiency of the UV to NIR conversion in the produced films and determine the optimal pulse parameters with respect to NIR emission intensity. We also demonstrate the synthesis of a crystalline YVO4:YbVO4 layered material by ALD to verify the possibility of creating artificial core–shell type structures. The structure, thickness, and composition of the deposited films have been studied by X-ray diffraction, ellipsometry, and X-ray fluorescence, respectively.
Getz, Michael; Hansen, Per-Anders; Ahmed, Mohammed Amin Karim; Fjellvåg, Helmer & Nilsen, Ola (2017). Luminescent YbVO4 by atomic layer deposition. Dalton Transactions. ISSN 1477-9226. 46(9), p. 3008–3013. doi: 10.1039/c7dt00253j. Full text in Research Archive Show summary
UV to visible and near-infrared converting thin films of YbVO4 have been deposited by atomic layer deposition, using the precursor combinations Yb(thd)3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and O3, and VO(thd)2 and O3 at a deposition temperature of 240 °C, followed by post deposition annealing at 400–1000 °C. The UV absorption and the visible and near-infrared emission have been investigated in detail. The structure, thickness and composition of the deposited films have been studied by X-ray diffraction, ellipsometry, and X-ray fluorescence, respectively. The optimal pulse ratio of Yb(thd)3 and VO(thd)2 with respect to near-infrared emission was found to be 1 : 3, which also yielded the most crystalline sample after annealing. Crystallization of the films is accelerated when an excess of V2O5 is present, enabling crystallization at temperatures as low as 500 °C, probably through a flux aided process.
Sønsteby, Henrik; Chernyshov, Dmitry; Getz, Michael; Nilsen, Ola & Fjellvåg, Helmer (2013). On the application of a single-crystal kappa-diffractometer and a CCD area detector for studies of thin films. Journal of Synchrotron Radiation. ISSN 0909-0495. 20, p. 644–647. doi: 10.1107/S0909049513009102. Full text in Research Archive

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Kok, Angela Chun Ying; Choolakkal, Arun Haridas; Röhrich, Dieter; Monakhov, Eduard; O'Neill, George & Pedersen, Henrik [Show all 15 contributors for this article] (2023). INDet: Lessons Learnt from Boron-coated 3-D Silicon Detector Production. Full text in Research Archive
O'Neill, George; Povoli, Marco; Kok, Angela Chun Ying; Koybasi, Ozhan; Getz, Michael Norderhaug & Röhrich, Dieter [Show all 15 contributors for this article] (2022). Predicting Efficiency of INDet Detectors. Full text in Research Archive
Povoli, Marco; Kok, Angela Chun Ying; Koybasi, Ozhan; Getz, Michael Norderhaug; Röhrich, Dieter & O'Neill, George [Show all 15 contributors for this article] (2022). 3D silicon detectors for neutron imaging applications. Full text in Research Archive
O'Neill, George; Povoli, Marco; Kok, Angela Chun Ying; Koybasi, Ozhan; Getz, Michael Norderhaug & Röhrich, Dieter [Show all 15 contributors for this article] (2022). Simulations Using NCrystal & Geant4 for Innovative Solid-state Neutron Detectors. Full text in Research Archive
Getz, Michael; Hansen, Per-Anders; Nilsen, Ola & Fjellvåg, Helmer (2015). Down Conversion in YbVO4 and YVO4:Yb3+ Thin Films Synthesized by Atomic Layer Deposition. Full text in Research Archive
Getz, Michael; Hansen, Per-Anders; Nilsen, Ola & Fjellvåg, Helmer (2015). Down Conversion in YbVO4 and YVO4:Yb3+ Thin Films Synthesized by Atomic Layer Deposition. Full text in Research Archive
Getz, Michael; Hansen, Per-Anders; Nilsen, Ola & Fjellvåg, Helmer (2014). Properties of Luminescent Europium Titanium Phosphate Thin Films Synthesized by ALD. Full text in Research Archive
Getz, Michael; Hansen, Per-Anders; Fjellvåg, Helmer & Nilsen, Ola (2014). Enhancing the Efficiency of Solar Cells Using Luminescent EuxTiyPzOw Thin Films Synthesized by ALD. Full text in Research Archive
Getz, Michael; Hansen, Per-Anders; Fjellvåg, Helmer & Nilsen, Ola (2013). Avoiding Concentration Quenching of Luminescencewith Thin Films Grown by ALD. Full text in Research Archive
Sønsteby, Henrik; Getz, Michael; Chernyshov, Dmitry; Nilsen, Ola & Fjellvåg, Helmer (2012). Untangling Diffraction Contributions from Epitaxial Thin Films Becomes Easy – Results from Recent Experiments at SNBL. Full text in Research Archive
Getz, Michael; Nilsen, Ola; Fjellvåg, Helmer & Hansen, Per-Anders Stensby (2017). Design and Growth of Luminescent Thin Films by Atomic Layer Deposition. Universitetet i Oslo. Full text in Research Archive Show summary
Luminescent materials have become an integral part of our society, being for instance used to light up our buildings and electronic displays. The process of absorbing ultra-violet light and converting it to visible or near infra-red could also be beneficial with respect to enhancing the efficiency of solar cells. This thesis describes the synthesis and characterization of different thin films deposited by atomic layer deposition, consisting of amorphous Eu-Ti-P-O, crystalline YbVO4, and crystalline YVO4:Yb3+ and evaluates their optical and structural properties for use as spectral converters for solar cells.

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Published Mar. 17, 2020 4:56 PM - Last modified Aug. 6, 2020 12:02 PM

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