michaeag

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Academic interests

Functional thin-films, Nanomaterials, Solid-state physics/chemistry, Solar cells, Sensors, Luminescence, Neutron detection, Optical Materials, Passivation

Current Project: INDet (UiO/SINTEF)

Aim of the project is to enhance the sensitivity of 3D neutron detectors by optimizing geometry, materials and structure. My contribution to the project is to deposit and characterize thin films used to passivate the interface between the silicon and neutron absorber.

Background

Bachelor og master in materials, energy og nanotechnology from the University of Oslo. Ph. D in light converting materials from the University of Oslo. Spent one year researching and developing an optical temperature sensor. Worked half a year as a researcher for Baldur Coatings AS with deposition and characterization of potenially superconducting thin-films.

Tags: SMN, LENS

Getz, Michael Norderhaug; Povoli, Marco; Koybasi, Ozhan; Slavicek, Tomas & Monakhov, Eduard (2023). Gamma-radiation hardness and long-term stability of ALD-Al2O3 surface passivated Si. Journal of Applied Physics. ISSN 0021-8979. 133(15). doi: 10.1063/5.0143013. Full text in Research Archive
Povoli, Marco; Kok, Angela Chun Ying; Koybasi, Ozhan; Getz, Michael Norderhaug; O'Neill, George & Röhrich, Dieter [Show all 15 contributors for this article] (2023). 3D silicon detectors for neutron imaging applications. Journal of Instrumentation (JINST). ISSN 1748-0221. 18, p. 1–12. doi: 10.1088/1748-0221/18/01/C01056. Full text in Research Archive
Getz, Michael Norderhaug; Povoli, Marco & Monakhov, Eduard (2022). Improving ALD-Al2O3 Surface Passivation of Si Utilizing Pre-Existing SiOx. IEEE Journal of Photovoltaics. ISSN 2156-3381. 12(4), p. 929–936. doi: 10.1109/JPHOTOV.2022.3169985. Full text in Research Archive
Koybasi, Ozhan; Nordseth, Ørnulf; Tran, Trinh; Povoli, Marco; Rajteri, Mauro & Pepe, Carlo [Show all 14 contributors for this article] (2021). High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx. Sensors. ISSN 1424-8220. 21(23). doi: 10.3390/s21237807. Full text in Research Archive Show summary
We performed a systematic study involving simulation and experimental techniques to develop induced-junction silicon photodetectors passivated with thermally grown SiO2 and plasma-enhanced chemical vapor deposited (PECVD) SiNx thin films that show a record high quantum efficiency. We investigated PECVD SiNx passivation and optimized the film deposition conditions to minimize the recombination losses at the silicon–dielectric interface as well as optical losses. Depositions with varied process parameters were carried out on test samples, followed by measurements of minority carrier lifetime, fixed charge density, and optical absorbance and reflectance. Subsequently, the surface recombination velocity, which is the limiting factor for internal quantum deficiency (IQD), was obtained for different film depositions via 2D simulations where the measured effective lifetime, fixed charge density, and substrate parameters were used as input. The quantum deficiency of induced-junction photodiodes that would be fabricated with a surface passivation of given characteristics was then estimated using improved 3D simulation models. A batch of induced-junction photodiodes was fabricated based on the passivation optimizations performed on test samples and predictions of simulations. Photodiodes passivated with PECVD SiNx film as well as with a stack of thermally grown SiO2 and PECVD SiNx films were fabricated. The photodiodes were assembled as light-trap detector with 7-reflections and their efficiency was tested with respect to a reference Predictable Quantum Efficient Detector (PQED) of known external quantum deficiency. The preliminary measurement results show that PQEDs based on our improved photodiodes passivated with stack of SiO2/SiNx have negligible quantum deficiencies with IQDs down to 1 ppm within 30 ppm measurement uncertainty.
Getz, Michael; Povoli, Marco & Monakhov, Eduard (2021). Effect of the native oxide on the Surface Passivation of Si by Al2O3. Journal of Applied Physics. ISSN 0021-8979. 129(20). doi: 10.1063/5.0051215. Full text in Research Archive
Getz, Michael; Nilsen, Ola & Hansen, Per-Anders Stensby (2019). Sensors for optical thermometry based on luminescence from layered YVO4: Ln3+ (Ln = Nd, Sm, Eu, Dy, Ho, Er, Tm, Yb) thin films made by atomic layer deposition. Scientific Reports. ISSN 2045-2322. 9(1). doi: 10.1038/s41598-019-46694-8.
Getz, Michael; Hansen, Per-Anders Stensby; Fjellvåg, Øystein Slagtern; Ahmed, Mohammed Amin Karim; Fjellvåg, Helmer & Nilsen, Ola (2017). Intense NIR emission in YVO4:Yb3+ thin films by atomic layer deposition. Journal of Materials Chemistry C. ISSN 2050-7526. 5(33), p. 8572–8578. doi: 10.1039/c7tc02135f. Full text in Research Archive
Getz, Michael; Hansen, Per-Anders; Ahmed, Mohammed Amin Karim; Fjellvåg, Helmer & Nilsen, Ola (2017). Luminescent YbVO4 by atomic layer deposition. Dalton Transactions. ISSN 1477-9226. 46(9), p. 3008–3013. doi: 10.1039/c7dt00253j. Full text in Research Archive
Getz, Michael; Hansen, Per-Anders; Fjellvåg, Helmer & Nilsen, Ola (2017). Luminescent properties of europium titanium phosphate thin films deposited by atomic layer deposition. RSC Advances. ISSN 2046-2069. 7(13), p. 8051–8059. doi: 10.1039/c6ra27644j. Full text in Research Archive
Sønsteby, Henrik; Chernyshov, Dmitry; Getz, Michael; Nilsen, Ola & Fjellvåg, Helmer (2013). On the application of a single-crystal kappa-diffractometer and a CCD area detector for studies of thin films. Journal of Synchrotron Radiation. ISSN 0909-0495. 20, p. 644–647. doi: 10.1107/S0909049513009102.

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Kok, Angela Chun Ying; Choolakkal, Arun Haridas; Röhrich, Dieter; Monakhov, Eduard; O'Neill, George & Pedersen, Henrik [Show all 15 contributors for this article] (2023). INDet: Lessons Learnt from Boron-coated 3-D Silicon Detector Production.
O'Neill, George; Povoli, Marco; Kok, Angela Chun Ying; Koybasi, Ozhan; Getz, Michael Norderhaug & Röhrich, Dieter [Show all 15 contributors for this article] (2022). Predicting Efficiency of INDet Detectors.
Povoli, Marco; Kok, Angela Chun Ying; Koybasi, Ozhan; Getz, Michael Norderhaug; Röhrich, Dieter & O'Neill, George [Show all 15 contributors for this article] (2022). 3D silicon detectors for neutron imaging applications.
O'Neill, George; Povoli, Marco; Kok, Angela Chun Ying; Koybasi, Ozhan; Getz, Michael Norderhaug & Röhrich, Dieter [Show all 15 contributors for this article] (2022). Simulations Using NCrystal & Geant4 for Innovative Solid-state Neutron Detectors .
Getz, Michael; Hansen, Per-Anders; Nilsen, Ola & Fjellvåg, Helmer (2015). Down Conversion in YbVO4 and YVO4:Yb3+ Thin Films Synthesized by Atomic Layer Deposition .
Getz, Michael; Hansen, Per-Anders; Nilsen, Ola & Fjellvåg, Helmer (2015). Down Conversion in YbVO4 and YVO4:Yb3+ Thin Films Synthesized by Atomic Layer Deposition .
Getz, Michael; Hansen, Per-Anders; Fjellvåg, Helmer & Nilsen, Ola (2014). Enhancing the Efficiency of Solar Cells Using Luminescent EuxTiyPzOw Thin Films Synthesized by ALD.
Getz, Michael; Hansen, Per-Anders; Nilsen, Ola & Fjellvåg, Helmer (2014). Properties of Luminescent Europium Titanium Phosphate Thin Films Synthesized by ALD.
Getz, Michael; Hansen, Per-Anders; Fjellvåg, Helmer & Nilsen, Ola (2013). Avoiding Concentration Quenching of Luminescencewith Thin Films Grown by ALD.
Sønsteby, Henrik; Getz, Michael; Chernyshov, Dmitry; Nilsen, Ola & Fjellvåg, Helmer (2012). Untangling Diffraction Contributions from Epitaxial Thin Films Becomes Easy – Results from Recent Experiments at SNBL.
Getz, Michael; Nilsen, Ola; Fjellvåg, Helmer & Hansen, Per-Anders Stensby (2017). Design and Growth of Luminescent Thin Films by Atomic Layer Deposition. Universitetet i Oslo. ISSN 1501-7710.

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Published Mar. 17, 2020 4:56 PM - Last modified Aug. 6, 2020 12:02 PM

Projects

No ongoing projects