UiO MiNaLab – Micro and Nanotechnology Laboratory - MiNaLab

UiO MiNaLab is one of four cleanrooms within the national infrastructure NorFab – The Norwegian Micro- and Nanofabrication Facility, supporting and enabling research and innovation within micro- and nanotechnology.

UiO MiNaLab offers open laboratory access for fabrication, characterization and collaborative research to all students and scientists at the University of Oslo, to the broader (public) research community in Norway and the EU, as well as industry and start-up professionals.

UiO MiNaLab has a 440 sq. m cleanroom with a ISO5 classification and several characterization laboratories. The infrastructure is targeted towards flexibility and provides equipment for the synthesis, modification and characterization of various material systems, such as semiconductors, metals, etc. The facility is operated by the Solid-state Physics and Quantum Technology group at the Department of Physics, the University of Oslo.

Publications

A. Azarov, J. Garcia Fernandez, J. Zhao, R. He, J-H. Park, D-W. Jeon. Phase glides and self-organization of atomically abrupt interfaces out of stochastic disorder in α-Ga₂O₃. Nature Communications 16, 3245 (2025).
A. Azarov, C. Radu, A. Galeckas, I.F Mercioniu, A. Cernescu, V. Venkatachalapathy, Vishnukanthan, E. Monakhov, F. Djurabekova, C. Ghica, J. Zhao, A. Kuznetsov. Self-assembling of multilayered polymorphs with ion beams. Nano Letters 25, 4, p. 1637–1643 (2025).
N. Aßmann, B. Hammann, M.C. Frøland, W. Kwapil, E. Monakhov. The differential impact of light soaking and dark annealing on hydrogen species during a LeTID cycle in boron-doped FZ silicon: A quantitative FT-IR study. Solar Energy Materials and Solar Cells 293, p. 1–10 (2025).
J. Garcia Fernandez, S.B Kjeldby, L.J. Zeng, E. Olsson, L. Vines, Ø. Prytz. Formation and stability of Ge nanocrystals in polymorph converted Ga₂O₃: Temperature-driven journey. Applied Physics Letters 126, 5 (2025).
M. Ghezellou, E.L. Ousdal, M.E. Bathen, L. Vines, J. Ul-Hassan. Influence of different hydrocarbons on impurities and minority carrier lifetime in 4H-SiC epitaxial layers. J.Phys Materials. 8, 2 (2025).
S.B. Kjeldby, D.M. Nielsen, S.P. Cooil, Y.K. Frodason, E. Zacharaki, I.-H. Lee, A. Kuznetsov, L. Vines, K. Bergum, V. S. Olsen. Tuning Properties of II-IV-Nitrides for Optoelectronic Applications. Adv. Optical Mater. e02634 (2025).
C. Martinella, M.E. Bathen, A. Galeckas, U. Grossner. Formation of extended defects in heavy-ion-degraded SiC power MOSFETs. APL Materials. 13, 5 (2025).
M. Mehler, N. Weinert, Nicolas, N. Aßmann, A. Herguth, G. Hahn, F Geml. Impact of high-temperature processing steps on the long-term stability of charge carrier lifetime in n -type FZ-silicon. EPJ Photovoltaics 16 (2025).
O. Samperi, A. Azarov, V. Bobal, M. Bertolini, M. Cantiano, L. Vines, A.Hallén, S. Coffa, M. E. Fragalà. Effects of ion channelling on 350 keV proton implantation of 4H-SiC measured by D-SIMS and DLTS defect profiling. Materials Science in Semiconductor Processing 190, 109320 (2025).
A. Azarov, A. Galeckas, E. Wendler, E. Monakhov, A. Kuznetsov. Inverse dynamic defect annealing in ZnO. Appl. Phys. Lett. 124, 042106 (2024).
A. Azarov, A. Galeckas, I. Cora, Z. Fogarassy, V. Venkatachalapathy, E. Monakhov, A. Kuznetsov. Optical Activity and Phase Transformations in γ/β Ga₂O₃ Bilayers Under Annealing. Adv. Optical Mater. 12, 2401325 (2024).
A. Azarov, A. Galeckas, A. Mikhaylov, A. Nikolskaya, D. Tetelbaum, D. Korolev, E. Monakhov, A. Kuznetsov. Defect evolution and nitrogen incorporation in ion-implanted β-Ga₂O₃. Appl. Phys. Lett. 125, 192107 (2024).
M.E. Bathen, P. Kumar, M. Ghezellou, M. Belanche, L. Vines, J. Ul-Hassan, U. Grossner. Dual configuration of shallow acceptor levels in 4H-SiC. Materials Science in Semiconductor Processing 177, 108360 (2024).
M. E. Bathen, R. Karsthof, A. Galeckas, P. Kumar, A. Kuznetsov, U. Grossner, L. Vines. Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime. Materials Science in Semiconductor Processing 176, 108316 (2024).
I. Bergsbak, Ø. Nordseth, K. K. Saxegaard, V. S. Olsen, H. von Wenckstern, K. Bergum. Device Simulation of 25.9% Efficient ZnO_xN_y/Si Tandem Solar Cell. Adv. Theory Simul. 7, 2400252 (2024).
J. Garcia Fernandez, S. B. Kjeldby, L.J. Zeng, A. Azarov, A. Pokle, P. D. Nguyen, E. Olsson, L. Vines, A. Kuznetsov, Ø. Prytz. In situ atomic-resolution study of transformations in double polymorph γ/β-Ga₂O₃ structures. Mater. Adv., 5, 3824 (2024).
B. Hammann, P. Vieira Rodrigues, N. Aßmann, W. Kwapil, F. Schindler, M.C. Schubert, S.W. Glunz. Deciphering the Role of Hydrogen in the Degradation of Silicon Solar Cells under Light and Elevated Temperature. Sol. RRL 8, 2400457 (2024).
Y. K. Hommedal, M.E. Bathen, V. M. Reinertsen, K.M. Johansen, L. Vines, Y.K. Frodason. Theoretical modeling of defect diffusion in wide bandgap semiconductors. J. Appl. Phys. 135, 170902 (2024).
Y. K. Hommedal, Y.K. Frodason, A. Galeckas, L. Vines, K.M. Johansen. Broad luminescence from Zn acceptors in Zn doped β-Ga₂O₃. APL Mater. 12, 021109 (2024).
Y. K. Hommedal, Y. K. Frodason, L. Vines, K.M. Johansen. Diffusion of Ge Donors in β-Ga₂O₃. Phys. Status Solidi B, 2400355 (2024).
A. Kaźmierczak-Bałata, J. Bodzenta, P. Szperlich, M. Jesionek, A. Michalewicz, A. Domanowska, J. Mayandi, V. Venkatachalapathy, A. Kuznetsov. Impact of Annealing in Various Atmospheres on Characteristics of Tin-Doped Indium Oxide Layers towards Thermoelectric Applications. Materials, 17(18), 4606 (2024).
A. Langørgen, L. Vines, Y.K. Frodason. Perspective on electrically active defects in β-Ga₂O₃ from deep-level transient spectroscopy and first-principles calculations. J. Appl. Phys. 135, 195702 (2024).
M. Mehler, N. Weinert, N. Aßmann, A. Herguth, G. Hahn, F. Geml. Long-term carrier lifetime instabilities in n-type FZ- and Cz-silicon under illumination at elevated temperature. Solar Energy Materials & Solar Cells 278, 113169 (2024).
E. L. Ousdal, M.E. Bathen, A. Galeckas, A. Kuznetsov, L. Vines. Formation and stability of point defect color centers in 6H silicon carbide. J. Appl. Phys. 135, 225701 (2024).
P. V. Rodrigues, B. Hammann, N. Aßmann, J. Schön, W. Kwapil, T. Niewelt, F. Schindler, E. Monakhov, M.C. Schubert. Doping dependence of boron-hydrogen dynamics in crystalline silicon. J. Appl. Phys. 136, 085703 (2024).
O. Samperi, L. Vines, A. Hallén, M.E. Fragalà. Charge Carrier Capture by Prominent Defect Centers in 4H-SiC. Defect and Diffusion Forum, 434 (2024).
G. Sozzi, S. Sapienza, G. Chiorboli, L. Vines, A. Hallen, R. Nipoti. Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law. IEEE Access, 01, 12 (2024).
H.J. Whitlow, A. Kuznetsov, A. Azarov, G. Nagy, R.J.W. Frost, N. Henderson, R. Greco, N. Deoli, K.M. Smith, W. Sudprasert, S. Amphalop, W. Insuan, S. Wichianchot, M. Ren, T. Osipowicz, C.G. Ryan, F. Villinger. Dynamic Analysis of major elements in biological tissue validating quantification of trace life elements in MeV ion beam microscopy. Nuclear Instruments and Methods in Physics Research B 554, 165411 (2024).
H.J. Whitlow, G. Nagy, A. Kuznetsov, R.J.W. Frost, A. Azarov, K.M. Smith, S. Amphalop, W. Insuan, S. Wichianchot, M. Ren, T. Osipowicz, C.G. Ryan, W. Sudprasert, F. Villinger. Major and Trace Element Composition Differences Revealed in Porcine Intestine by Dynamic Analysis and MeV Ion Microscopy. Phys. Status Solidi A, 2400161 (2024).
A. Azarov, A. Galeckas, F. C.-C. Ling and A. Kuznetsov. Tuning defect-related optical bands by channeling implants in semiconductors. J. Phys. D: Appl. Phys. 56, 035103 (2023).
J. Borgersen, R. Karsthof, V. Rønning, L. Vines, H. Wenckstern, M. Grundmann, A. Kuznetsov, and K. M. Johansen. Origin of enhanced conductivity in low dose ion irradiated oxides. AIP Advances 13, 015211 (2023).
A. Galeckas, R. M. Karsthof, G. Kingsly, A. Kok, M. E. Bathen, L. Vines and A. Kuznetsov. Cross-sectional carrier lifetime profiling and deep level monitoring in silicon carbide films exhibiting variable carbon vacancy concentrations. Phys. Status Solidi A, 2200449 (2023).
M. Ghezellou, P. Kumar, M. E. Bathen, R. Karsthof, E. Ö. Sveinbjörnsson, U. Grossner, J. Peder Bergman, L. Vines, and J. Ul-Hassan. The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers. APL Mater 11, 031107 (2023).
Y. K. Hommedal, Y. K. Frodason, L. Vines, and K. M. H. Johansen. Trap-limited diffusion of Zn in β−Ga₂O₃. Phys. Rev. Materials 7, 035401 (2023).
S. B. Kjeldby, P. D. Nguyen, J. García-Fernández, K. Haug, A. Galeckas, I. J. T. Jensen, A. Thøgersen, L. Vines and Ø. Prytz. Optical properties of ZnFe₂O₄ nanoparticles and Fe-decorated inversion domain boundaries in ZnO. Nanoscale Adv., 5, 2102-2110 (2023).
V. Ney, B. Henne, M. de Souza, W. Jantsch, K. M. Johansen, F. Wilhelm, A. Rogalev, and A. Ney. Valence state, lattice incorporation, and resulting magnetic properties of Ni in Zn/Co-based magnetic oxides. Journal of Applied Physics 133, 033904 (2023).

Partnership

UiO MiNaLab is a partner in the national infrastructure NORFAB – The Norwegian Micro- and Nanofabrication Facility, together with NTNU NanoLab, USN MST Lab and SINTEF MiNaLab.

UiO MiNaLab is also a part of NNN – The Nordic Nanolab Network and Euronanolab – The European Nanolab Network.

UiO MiNaLab is funded by The Research Council of Norway and The University of Oslo.