Chidanand Bhoodoo

Bilde av Chidanand Bhoodoo
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Mobiltelefon 41326909 +47-41326909, Office : +47-22840942
Brukernavn
Andre tilknytninger Det matematisk-naturvitenskapelige fakultet (Student)
Emneord: SMN

Publikasjoner

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  • Arcadipane, E; Sanz, R; Amiard, G; Boninelli, S; Impellizzeri, G; Privitera, V; Bonkerud, Julie; Bhoodoo, Chidanand; Vines, Lasse; Svensson, Bengt Gunnar & Romano, L (2017). Correction: Single-crystal TiO<sub>2</sub> nanowires by seed assisted thermal oxidation of Ti foil: synthesis and photocatalytic properties (RSC Adv. (2016) 6 (55490-55498) DOI: 10.1039/C6RA09088E. RSC Advances.  ISSN 2046-2069.  7(19), s 11222 . doi: 10.1039/c7ra90019h
  • Hupfer, Alexander; Bhoodoo, Chidanand; Vines, Lasse & Svensson, Bengt Gunnar (2017). Formation and Evolution of E3 centers in Hydrothermally grown Zinc Oxide.
  • Bhoodoo, Chidanand; Hupfer, Alexander; Vines, Lasse; Monakhov, Edouard & Svensson, Bengt Gunnar (2016). Evolution Kinetics of Elementary Point Defects in ZnO Implanted with Low Fluences of Helium at Cryogenic Temperature.
  • Hupfer, Alexander; Bhoodoo, Chidanand; Persson, Clas; Vines, Lasse & Svensson, Bengt Gunnar (2016). Formation and evolution of E3 centers in hydrothermally grown zinc oxide.
  • Hupfer, Alexander; Bhoodoo, Chidanand; Vines, Lasse & Svensson, Bengt Gunnar (2016). Formation and annihilation of E4 centers in ZnO: influence of hydrogen.
  • Bhoodoo, Chidanand; Hupfer, Alexander; Vines, Lasse; Monakhov, Edouard & Svensson, Bengt Gunnar (2014). Formation kinetics of a deep acceptor-like level in helium-implanted ZnO.
  • Bhoodoo, Chidanand; Vines, Lasse; Monakhov, Edouard & Svensson, Bengt Gunnar (2014). Annealing Kinetics of The Single Vacancy in Silicon studied By Low Temperature Irradiation And Deep Level Transient Spectroscopy.
  • Bhoodoo, Chidanand; Vines, Lasse; Monakhov, Edouard & Svensson, Bengt Gunnar (2013). Dopant concentration dependence of local compensation in low-dose ion-bombarded Silicon.
  • Bhoodoo, Chidanand; Vines, Lasse; Monakhov, Edouard & Svensson, Bengt Gunnar (2013). Dopant concentration dependence of local compensation in low-dose ion-bombarded n-type Silicon.

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Publisert 21. juni 2012 11:58 - Sist endret 26. nov. 2012 11:33