FT-IR spectroscopy, DLTS
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Nicole Aßmann studied phyics in Heidelberg, Germany, where she finished her M. Sc. in 2021. The Master Thesis was carried out at UiO about MOS structures for power electronics.
She started as PhD candidate in September 2021 in physics at UiO in the field of semiconductor physics. The main objective of this project is to identify the hydrogen-related defects present in commercial solar-grade silicon to determine which of these defects influence efficiency degradation processes.