Academic interests
My academic research focuses on combinatorial materials science with an emphasis on wide-bandgap oxide semiconductors, particularly rhombohedral (α-Ga₂O₃)-based alloys with group-III elements and transition-metal sesquioxides such as Cr₂O₃, Ti₂O₃, and V₂O₃. I am especially interested in modelling and simulation of pulsed laser deposition (PLD) processes, including plasma plume expansion and predictive modeling of thickness and compositional distributions for high-throughput materials discovery. My work combines experimental thin-film growth with high-throughput electrical, structural, and optical characterization using XRD, profilometry, AFM, EDX, Hall, IV and spectroscopic ellipsometry, alongside the development of software tools for PLD process optimization and digital-twin applications.
Courses taught
- Seminars for theoretical physics I, II and III at Leipzig University
Positions held
- Doctoral Researcher, Leipzig University, Germany
- Postdoctoral Researcher, Project Leader – „MARS-PLD“, SAB Validation Grant, Leipzig University, Germany
Background
- 2015-2018: Bachelor of Science, Leipzig University, Germany
- 2018-2020: Master of Science, Leipzig University, Germany
- 2021-2024: Ph.D. Physics, Leipzig University, Germany
- 2024: Graduate School "BuildMoNa", Leipzig University, Germany
Publications
C. Petersen, S. Vogt, M. Kneiß, H. von Wenckstern, M. Grundmann. PLD of α-Ga₂O₃ on m-plane Al₂O₃: Growth regime, growth process, and structural properties. APL Materials 11 (6), 061122 (2023). https://doi.org/10.1063/5.0149797
C. Petersen, T. Schultz, M. Andreassen, S. Vogt, N. Koch, M. Grundmann, H. von Wenckstern. Toward Ultrawide Bandgap Engineering: Physical Properties of an α-(TixGa₁−x)₂O₃ Material Library. Phys. Status Solidi RRL, 2500033 (2025). https://doi.org/10.1002/pssr.202500033
C. Petersen, D. Sayenko, S. Vogt, C. Sturm, M. Grundmann, H. von Wenckstern. High-Throughput Combinatorial Synthesis of Rhombohedral α-(CrₓGa₁−ₓ)₂O₃ Solid Solutions Over the Entire Composition Range. Phys. Status Solidi RRL, 2500048 (2025). https://doi.org/10.1002/pssr.202500048
S. Vogt, C. Petersen, M. Kneiß et al. Realization of Conductive n-Type Doped α-Ga₂O₃ on m-Plane Sapphire Grown by a Two-Step Pulsed Laser Deposition Process. Phys. Status Solidi A 220 (3), 2200721 (2023). https://doi.org/10.1002/pssa.202200721
S. Köpp, C. Petersen, D. Splith et al. Properties of Schottky Barrier Diodes on Heteroepitaxial α-Ga₂O₃ Thin Films. J. Vac. Sci. Technol. A 41, 043411 (2023). https://doi.org/10.1116/6.0002651
S. Vogt, C. Petersen, H. von Wenckstern et al. Lateral α-Ga₂O₃:Zr Metal–Semiconductor Field-Effect Transistors. Appl. Phys. Lett. 125, 253507 (2024). https://doi.org/10.1063/5.0220211
S. Vogt, C. Petersen, H. von Wenckstern et al. Zr Doping in Pulsed-Laser-Deposited α-Ga₂O₃ for Device Applications. Phys. Rev. Applied 21, 064016 (2024). https://doi.org/10.1103/PhysRevApplied.21.064016
P. Bokemeyer, C. Petersen, C. Dethloff et al. α-Ga₂O₃-Based Heterojunction Diodes and Junction Field-Effect Transistors. Phys. Status Solidi RRL, 2400388 (2025). https://doi.org/10.1002/pssr.202400388
N. Hajizadeh, C. Petersen, L. Vines et al. Self-Trapped Hole Migration and Defect-Mediated Thermal Quenching of Luminescence in α- and β-Ga₂O₃. Adv. Funct. Mater. (2025) e17876. https://doi.org/10.1002/adfm.202517876