Marte Pedersen Stalsberg

• Strand, Frode Sneve; Cooil, Simon Phillip; Campbell, Quinn T.; Flounders, John J.; Røst, Håkon & Åsland, Anna Cecilie [Show all 16 contributors for this article] (2025). Direct Observation of 2DEG States in Shallow Si:Sb δ-Layers. Journal of Physical Chemistry C. ISSN 1932-7447. 129(2), p. 1339–1347. doi: 10.1021/acs.jpcc.4c07331. Full text in Research Archive Show summary

  We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb δ-layers. We show that, in spite of the known challenges in producing highly confined Sb δ-layers, sufficient confinement is created such that the lowest conduction band states (Γ states, studied in depth in other silicon δ-layers), become occupied and can be observed using angle-resolved photoemission spectroscopy. The electronic structure of the Si:Sb δ-layers closely resembles that of Si:P systems, where the observed conduction band is near-parabolic and slightly anisotropic in the k∥ plane. The observed Γ state extends ∼1 nm in the out-of-plane direction, which is slightly wider than the 1/3 monolayer thick dopant distribution. This is caused by a small segregation of the dopant layer, which is nevertheless minimal when comparing with earlier published attempts. Our results serve to demonstrate that Sb is still a feasible dopant alternative for use in the semiconductor δ-layer platform, providing similar electronic functionality to Si:P systems. Additionally, it has the advantages of being less expensive, more controllable, safer to handle, and more compatible with industrial patterning techniques. Si:Sb is therefore a viable platform for emerging quantum device applications.

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• Stalsberg, Marte Pedersen; Schenk, Richard Justin; Roberts, Daniel; Rørheim, Adrian Næraa; Moen-Duran, Oliver & Wells, Justin William [Show all 7 contributors for this article] (2024). Towards a p-n heterojunction of Ga2O3 and diamond. Full text in Research Archive
• Stalsberg, Marte Pedersen; Strand, Frode Sneve; Cooil, Simon Phillip; Campbell, Quinn T.; Flounders, John J. & Røst, Håkon Ivarssønn [Show all 10 contributors for this article] (2024). A 2D electron gas by shallow Sb doping in Si for use in Quantum Devices. Full text in Research Archive
• Stalsberg, Marte Pedersen; Wells, Justin William & Cooil, Simon Phillip (2024). Towards a p-n Heterojunction from Ga2O3 and Diamond. Full text in Research Archive
• Stalsberg, Marte Pedersen; Strand, Frode Sneve; Cooil, Simon Phillip; Campbell, Quinn T.; Flounders, John J. & Røst, Håkon Ivarssønn [Show all 10 contributors for this article] (2023). Atomically Sharp and High-Density Sb Doping in Si for use in Quantum Devices. Full text in Research Archive

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