Disputas: Marc Avice

Prøveforelesning

Bedømmelseskomité

Professor Einar Sveinbjørnsson, Chalmers University of Technology, Göteborg
Dr. Antonella Poggi, Council of National Research – Institute of Microelectronics and Microtechnology, Bologna
Professor Ørjan Grøttem Martinsen, Universitetet i Oslo

Leder av disputas:  Eivind Osnes

Veileder:  Bengt G. Svensson, Ulrike Grossner

Sammendrag

In this PhD work, aluminum oxide (Al₂O₃) have been shown to be a serious candidate as an alternative to silicon dioxide (SiO₂) for obtaining high electron channel mobility in SiC-based metal-oxide-semiconductor-field-effect-transistors (MOSFETs) and for future use in devices operating at elevated temperatures, like chemical gas sensors. Research has been carried out at the Mina-Lab at Forskningsparken as well as at the physic department. This PhD thesis has been written within the area of Physical Electronic/Nanotechnology.

Although silicon (Si) has been the dominant semiconductor in microelectronics for the past 50 years, it is not a favorable material for high temperature, high power and high frequency devices, working in harsh environments. For this reason, in the last 15 years, wide bandgap semiconductors like silicon carbide (SiC), have gained interest in the scientific community as a promising material for number of applications. However, because of accelerated degradation of the SiC native oxide, SiO₂, when exposed to harsh conditions such as high temperatures or/and high electric fields, as well as low carrier mobility for SiC-based MOSFETs, alternative dielectrics such as Al₂O₃ have attracted interest in SiC-based research.

Here, electrical and structural measurement techniques have been performed to investigate the properties of the Al/Al₂O₃/SiC Metal-Oxide-Semiconductor (MOS) capacitors and compared with Al/SiO₂/SiC MOS capacitors. The results revealed a low density of interfacial defects (responsible for the poor performance of SiC-based MOSFETs) at the Al₂O₃/SiC interface after heat treatment showing great potential for obtaining high electron channel mobility in SiC-based MOSFET’s using Al₂O₃ as a gate oxide.

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