Marianne Etzelmüller Bathen

• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Coutinho, José & Vines, Lasse (2020). Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC. Journal of Applied Physics.  ISSN 0021-8979.  127(8) . doi: 10.1063/1.5140659 Full text in Research Archive. Show summary

  The silicon vacancy (VSi) in 4H-SiC is a room temperature single-photon emitter with a controllable high-spin ground state and is a promising candidate for future quantum technologies. However, controlled defect formation remains a challenge, and, recently, it was shown that common formation methods such as proton irradiation may, in fact, lower the intensity of photoluminescence (PL) emission from VSi as compared to other ion species. Herein, we combine hybrid density functional calculations and PL studies of the proton-irradiated n-type 4H-SiC material to explore the energetics and stability of hydrogen-related defects, situated both interstitially and in defect complexes with VSi, and confirm the stability of hydrogen in different interstitial and substitutional configurations. Indeed, VSi-H is energetically favorable if VSi is already present in the material, e.g., following irradiation or ion implantation. We demonstrate that hydrogen has a significant impact on electrical and optical properties of VSi, by altering the charge states suitable for quantum technology applications, and provide an estimate for the shift in thermodynamic transition levels. Furthermore, by correlating the theoretical predictions with PL measurements of 4H-SiC samples irradiated by protons at high (400 C) and room temperatures, we associate the observed quenching of VSi emission in the case of high-temperature and high-fluence proton irradiation with the increased mobility of Hi, which may initiate VSi-H complex formation at temperatures above 400 C. The important implication of hydrogen being present is that it obstructs the formation of reliable and efficient single-photon emitters based on silicon vacancy defects in 4H-SiC.

• Bathen, Marianne Etzelmüller; Linnarsson, Margareta; Ghezellou, Mizagh; Ul Hassan, Jawad & Vines, Lasse (2020). Influence of Carbon Cap on Self-Diffusion in Silicon Carbide. Crystals.  ISSN 2073-4352.  10(9) . doi: 10.3390/cryst10090752 Full text in Research Archive. Show summary

  Self-diffusion of carbon (12C and 13C) and silicon (28Si and 30Si) in 4H silicon carbide has been investigated by utilizing a structure containing an isotope purified 4H-28Si12C epitaxial layer grown on an n-type (0001) 4H-SiC substrate, and finally covered by a carbon capping layer (C-cap). The 13C and 30Si isotope profiles were monitored using secondary ion mass spectrometry (SIMS) following successive heat treatments performed at 2300−−2450∘C in Ar atmosphere using an inductively heated furnace. The 30Si profiles show little redistribution within the studied temperature range, with the extracted diffusion lengths for Si being within the error bar for surface roughening during annealing, as determined by profilometer measurements. On the other hand, a significant diffusion of 13C was observed into the isotope purified layer from both the substrate and the C-cap. A diffusivity of D=8.3×106e−10.4/kBT cm2/s for 13C was extracted, in contrast to previous findings that yielded lower both pre-factors and activation energies for C self-diffusion in SiC. The discrepancy between the present measurements and previous theoretical and experimental works is ascribed to the presence of the C-cap, which is responsible for continuous injection of C interstitials during annealing, and thereby suppressing the vacancy mediated diffusion.

• Bathen, Marianne Etzelmüller; Vines, Lasse & Coutinho, José (2020). First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC. Journal of Physics: Condensed Matter.  ISSN 0953-8984.  33(7) . doi: 10.1088/1361-648X/abc804 Full text in Research Archive. Show summary

  Point defects in solids are promising single-photon sources with application in quantum sensing, computing and communication. Herein, we describe a theoretical framework for studying electric field effects on defect-related electronic transitions, based on density functional theory calculations with periodic boundary conditions. Sawtooth-shaped electric fields are applied perpendicular to the surface of a two-dimensional defective slab, with induced charge singularities being placed in the vacuum layer. The silicon vacancy (VSi) in 4H-SiC is employed as a benchmark system, having three zero-phonon lines in the near-infrared (V1, V1' and V2) and exhibiting Stark tunability via fabrication of Schottky barrier or p-i-n diodes. In agreement with experimental observations, we find an approximately linear field response for the zero-phonon transitions of VSi involving the decay from the first excited state (named V1 and V2). However, the magnitude of the Stark shifts are overestimated by nearly a factor of 10 when comparing to experimental findings. We discuss several theoretical and experimental aspects which could affect the agreement.

• Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2020). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Physical review B (PRB).  ISSN 2469-9950.  102(18) . doi: 10.1103/PhysRevB.102.184111 Show summary

  The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photoluminescence spectroscopy. A comprehensive model is suggested describing the evolution and interconversion of irradiation-induced point defects during annealing below 1000 ∘C. The model proposes the EH4 and EH5 traps frequently found by DLTS to originate from the (+/0) charge transition level belonging to different configurations of the carbon antisite-carbon vacancy (CAV) complex. Furthermore, we show that the transformation channel between the silicon vacancy (VSi) and CAV is effectively blocked under n-type conditions, but becomes available in samples where the Fermi level has moved towards the center of the band gap due to irradiation-induced donor compensation. The annealing of VSi and the carbon vacancy (VC) is shown to be dominated by recombination with residual self-interstitials at temperatures of up to 400 ∘C. Going to higher temperatures, a decay of the CAV pair density is reported which is closely correlated to a renewed increase of VC concentration. A conceivable explanation for this process is the dissociation of the CAV pair into separate carbon anitisites and VC defects. Lastly, the presented data supports the claim that the removal of free carriers in irradiated SiC is due to introduced compensating defects and not passivation of shallow nitrogen donors.

• Reinertsen, Vilde Mari; Weiser, Philip Michael; Frodason, Ymir Kalmann; Bathen, Marianne Etzelmüller; Vines, Lasse & Johansen, Klaus Magnus H (2020). Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals. Applied Physics Letters.  ISSN 0003-6951.  117 . doi: 10.1063/5.0027333 Full text in Research Archive. Show summary

  The effect of lattice anisotropy on the diffusion of hydrogen (H)/deuterium (2H) in b-Ga2O3 was investigated using secondary ion mass spectrometry (SIMS) and hybrid-functional calculations. Concentration-depth profiles of 2H-implanted single crystals show that 2H can diffuse along the direction perpendicular to the (010) surface at temperatures as low as 300 degC, whereas diffusion along the direction perpendicular to the (-201) surface occurs only around 500 degC. For both directions, the evolution of the 2H concentration–depth profiles after heat treatments can be modeled by trap-limited diffusion. Moreover, the traps can be present in the as-received crystals or created during ion implantation. Comparison of the experimentally obtained binding energy for 2H to the trap (2.3+/-0.2 eV) with the binding energies determined from first-principles calculations suggests that intrinsic point defects (e.g., VGa^ib) or defect complexes (e.g., VGa(2)VO(2)) are excellent candidates for the trap and will play a crucial role in the diffusion of H or 2H in b-Ga2O3.

• Vasquez, Geraldo Cristian; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Bazioti, Kalliopi; Johansen, Klaus Magnus H; Maestre, D.; Cremades, A.; Prytz, Øystein; Moe, A.M.; Kuznetsov, Andrej & Vines, Lasse (2020). Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles. Nano Letters.  ISSN 1530-6984.  20(12), s 8689- 8695 . doi: 10.1021/acs.nanolett.0c03472
• Woerle, Judith; Bathen, Marianne Etzelmüller; Prokscha, Thomas; Galeckas, Augustinas; Ayedh, Hussein Mohammed Hussein; Vines, Lasse & Grossner, Ulrike (2020). Muon Interaction with Negative-U and High-Spin-State Defects: Differentiating Between C and Si Vacancies in 4H-SiC. Physical Review Applied.  ISSN 2331-7019.  14 . doi: 10.1103/PhysRevApplied.14.054053
• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, José; Frodason, Ymir Kalmann & Vines, Lasse (2019). Electrical charge state identification and control for the silicon vacancy in 4H-SiC. npj Quantum Information.  ISSN 2056-6387.  5(1), s 1- 9 . doi: 10.1038/s41534-019-0227-y Full text in Research Archive.
• Bathen, Marianne Etzelmüller; Coutinho, José; Ayedh, Hussein Mohammed Hussein; Hassan, Jawad U; Farkas, Ildiko; Öberg, Sven; Frodason, Ymir Kalmann; Svensson, Bengt Gunnar & Vines, Lasse (2019). Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment. Physical review B (PRB).  ISSN 2469-9950.  100(1), s 014103-1- 014103-15 . doi: 10.1103/PhysRevB.100.014103 Full text in Research Archive.
• Ayedh, Hussein Mohammed Hussein; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Hassan, Jawad U; Bergman, J. P.; Nipoti, Roberta; Hallen, Anders & Svensson, Bengt Gunnar (2018). Controlling the carbon vacancy in 4H-SiC by thermal processing. ECS Transactions.  ISSN 1938-5862.  86(12), s 91- 97 . doi: 10.1149/08612.0091ecst
• Bathen, Marianne Etzelmüller; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Farkas, Ildiko; Janzen, Erik & Svensson, Bengt Gunnar (2018). Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiC. Materials Science Forum.  ISSN 0255-5476.  924, s 200- 203 . doi: 10.4028/www.scientific.net/MSF.924.200
• Bathen, Marianne Etzelmüller & Linder, Jacob (2017). Spin Seebeck effect and thermoelectric phenomena in superconducting hybrids with magnetic textures or spin-orbit coupling. Scientific Reports.  ISSN 2045-2322.  7, s 1- 13 . doi: 10.1038/srep41409 Full text in Research Archive.
• Linder, Jacob & Bathen, Marianne Etzelmüller (2016). Spin caloritronics with superconductors: Enhanced thermoelectric effects, generalized Onsager response-matrix, and thermal spin currents. Physical Review B. Condensed Matter and Materials Physics.  ISSN 1098-0121.  93(22) . doi: 10.1103/PhysRevB.93.224509 Full text in Research Archive.

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• Bathen, Marianne Etzelmüller (2020, 05. juni). Deltagelse på Abels Tårn, NRK P2. [Radio].  NRK P2. Show summary

  Hvorfor blir noen IKKE bitt av mygg (til alle andres ergrelse), og hvorfor blir man til spagetti om man hopper ned i et sort hull? Hele menyen: - Kan det bryte ut en helt ny pandemi på romstasjonen? - Hvorfor bærer lyden så godt over vann? - Skyldes pandemier menneskets tukling med naturen? - Kan koronaisolasjon ta knekken på andre sjukdommer? - Kan virus og bakterier bli resistente mot antibac? - Hvorfor bryter Newtons lover sammen i ekstreme situasjoner? - Sjefer som ikke blir bitt av mygg - Vokser håret mer når man sover? - Er elbiler virkelig klimavennlige også i land med BARE kullkraft? - Blir insekter gamle og grå som oss? I panelet: Insektøkolog Anne Sverdrup Thygeson Fysiker Marianne Etzelmüller Bathen Lege Steinar Madsen

• Bathen, Marianne Etzelmüller (2020). Point Defects in silicon carbide for quantum technologies: Identification, tuning and control.
• Bathen, Marianne Etzelmüller & Olsen, Vegard Skiftestad (2020). Foredrag for FA-studenter om halvlederfysikk.
• Bathen, Marianne Etzelmüller & Olsen, Vegard Skiftestad (2020). Foredrag for MENA-studenter om halvlederfysikk.
• Bathen, Marianne Etzelmüller (2019, 15. februar). Abels Tårn. [Radio].  NRK P2. Show summary

  Nå står kampen om gruveavfall i Repparfjorden. Men gruven skal produsere både kobber og sølv som brukes i solceller. Er det egentlig bærekraftig å skulle produsere nok solceller til å erstatte all verdens fosile energikilder? - Hvis man tar stikling av en stikling av en stikling etc - er det da samme plante 1000 år seinere? - Noen sier det går strøm i telefonladere som står i, gjør det det? - Er egentlig solceller bærekraftig - når man ser på metallene som brukes for å lage dem? - Hvorfor står det Aloe barbadensis på innholdsfortegnelsen på Aloe vera produkter? - Hvordan kan en qbit være både 0 og 1 på en gang? I panelet: Botaniker Charlotte Sletten Bjorå Elektroingeniør Sverre Holm Kvantefysiker/nanoteknolog Marianne Etzelmüller Bathen

• Bathen, Marianne Etzelmüller (2019, 28. oktober). Intervju av TV2 Nyhetskanalen, kl 0710, om kvantedatamaskiner. [TV].  TV2 Nyhetskanalen.
• Bathen, Marianne Etzelmüller (2019). Kvantedatamaskiner - prinsipp, funksjon, og hvordan de nokså enkelt kan lages på labben.
• Bathen, Marianne Etzelmüller (2019). Kvantedatamaskiner - prinsipp, funksjon, og hvordan de nokså enkelt kan lages på labben. Show summary

  Datamaskiner styrer en stadig større del av hverdagen vår, og når bruken av digitale verktøy øker, trenger vi også kraftigere datamaskiner. Det finnes haugevis av oppgaver som dagens superdatamaskiner enten er for svake til, eller ikke laget for, å gjøre. Forskere over hele verden jobber med dette problemet, og kvantedatamaskiner har seilt frem som en mulig løsning. Men, kvantedatamaskinene som har blitt laget så langt, er bygd opp av veldig få såkalte kvantebits. Disse lages av dyre materialer, er veldig vanskelige å lage og kan kun operere ved ekstremt lave temperaturer. Derfor ønsker man å finne et bedre alternativ, for eksempel ved å bruke halvledermaterialer, som ellers brukes som transistorer, lys-emitterende dioder og solceller. Marianne Etzelmüller Bathen er forsker ved Fysisk institutt, og jobber med å lage og kontrollere kvantebits i halvledere. Hun vil snakke om hvordan de nye kvantedatamaskinene fungerer, hva de kan brukes til, hvordan de skiller seg fra de gamle og hvordan hun og hennes kolleger jobber for å legge grunnlaget for en fremtidig IT-revolusjon.

• Bathen, Marianne Etzelmüller (2019). The future of quantum computing: Beyond the superconducting paradigm.
• Bathen, Marianne Etzelmüller; Borgersen, Jon Arthur; Karlsen, Kjetil; Nyborg, Martin; Olsen, Vegard Skiftestad; Reinertsen, Vilde Mari & Stulen, Fredrik Arnesen (2019). Skolebesøk ved MiNaLab.
• Bathen, Marianne Etzelmüller & Caroline, Enge (2019, 12. august). Norske studenter lager spill til «den neste store teknologien»: Kvantedatamaskinen.  Aftenposten. Show summary

  Vemund Falch og Christian Johnsens sommerjobb er å lage et pokerspill som kan brukes på en kvantedatamaskin. I verden foregår et kappløp for å forstå hva annet maskinene kan brukes til.

• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, J & Vines, Lasse (2019). Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-SiC.
• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, José; Frodason, Ymir Kalmann & Vines, Lasse (2019). Electrical charge-state identification and emission intensity modulation of the silicon vacancy in 4H-SiC.
• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike; Coutinho, José & Vines, Lasse (2019). Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-Si. Show summary

  The high-spin ground state and bright single-photon emission of the silicon vacancy (VSi) in 4H-SiC offer exciting possibilities for quantum technology and spintronics applications, especially as both are available at room temperature [1,2]. However, quantum compatibility only exists for the singly negative VSi, and single-photon counts are still too low to realize efficient spin-photon interfaces without resorting to complex nanofabrication methods [3]. Herein, we demonstrate enhanced optical emission from VSi using Schottky barrier diode (SBD) formation, and attribute our findings to increased occupancies of VSi-1.

• Bathen, Marianne Etzelmüller & Jemterud, Torkild (2019, 22. november). Abels Tårn. [Radio].  NRK P2.
• Bathen, Marianne Etzelmüller & Jemterud, Torkild (2019, 20. september). Abels tårn. [Radio].  NRK P2. Show summary

  En lytter fra Nord-Norge vil gjerne få nok luft, men slippe en halv meter snø inn gjennom soveromsvinduet på vinteren. Kan potteplanter gjøre susen? - Potteplanter som oksygenprodusenter på soverommet - Nanosvamper fjerner grønske på terrassen - Er det en dag i året der sola står opp på likt langs en hel lengdegrad? - Skyldes årets enorme mengder fnokk tørkestress fra forrige sommer? - Hvorfor kommer det blod og fiskesøl ut av tinende poser fra fryseren? - "Ingen regel uten unntak", heter det. Et paradoks? - Hvordan kan vaniljerot være en plante, når den ikke har klorofyll? I panelet: Botaniker Charlotte Sletten Bjorå Nanoteknolog Marianne Bathen Matematiker Andreas Nakkerud

• Bathen, Marianne Etzelmüller & Olsen, Vegard Skiftestad (2019). Omvisning for FA og ELITE.
• Bathen, Marianne Etzelmüller & Vines, Lasse (2019). Point defects in semiconductors for quantum technology: Example of silicon vacancy in silicon carbide.
• Ayedh, Hussein Mohammed Hussein; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Ul Hassan, Jawad; Bergman, J. P.; Nipoti, Roberta; Hallén, Anders & Svensson, Bengt Gunnar (2018). Controlling the Carbon Vacancy in 4H-SiC By Thermal Processing.
• Bathen, Marianne Etzelmüller (2018). Hvordan kan vi lage fremtidens datamaskiner?.
• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Frodason, Ymir Kalmann; Vines, Lasse & Svensson, Bengt Gunnar (2018). Tuning silicon vacancy formation in 4H-SiC via proton irradiation for quantum technology.
• Bathen, Marianne Etzelmüller; Ingebrigtsen, Mads Eide; Olsen, Vegard Skiftestad; Rønning, Vegard & Vines, Lasse (2018). Omvisning for studieprogrammene FA og ELITE.
• Bathen, Marianne Etzelmüller; Vines, Lasse; Galeckas, Augustinas; Frodason, Ymir Kalmann & Svensson, Bengt Gunnar (2018). Charge state transitions of the silicon vacancy in 4H-SiC: Combined DLTS, PL and DFT study.
• Bathen, Marianne Etzelmüller; Vines, Lasse; Galeckas, Augustinas; Frodason, Ymir Kalmann & Svensson, Bengt Gunnar (2018). Correlating charge state transitions of the Si vacancy to the S1/S2 peaks in DLTS spectra of n-type 4H-SiC.
• Bathen, Marianne Etzelmüller; Vines, Lasse & Riise, Heine Nygard (2018). Ina tar valget: halvlederfysikk. Show summary

  Informasjonsvideo om pågående forskningsprosjekter og muligheter for å ta mastergrad ved gruppe for halvlederfysikk (LENS) ved Universitetet i Oslo (UiO). Bidraget ble publisert som en del av serien Ina tar valget på Snapchat-kanalen til fysisk institutt ved UiO.

• Bathen, Marianne Etzelmüller & Vogt, Yngve (2018, 01. november). Defekte materialer kan brukes til kvantedatamaskiner. [Tidsskrift].  Apollon. Show summary

  Forskere legger nå grunnlaget for fremtidens kvantedatamaskiner ved å skyte vekk atomer.

• Bathen, Marianne Etzelmüller & Vogt, Yngve (2018, 20. november). Jakter på fremtidens IT-revolusjon. [Tidsskrift].  Teknisk ukeblad.
• Coutinho, José; Gouveia, J. D.; Demmouche, K.; Bathen, Marianne Etzelmüller & Svensson, Bengt Gunnar (2018). Carbon vacancies and interstitials in 3C- and 4H-SiC: theoretical milestones and challenges.
• Bathen, Marianne Etzelmüller; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Farkas, Ildiko; Janzen, Erik & Svensson, Bengt Gunnar (2017). Diffusion of the Carbon Vacancy in a-cut and c-cut n-type 4H-SiC.
• Bathen, Marianne Etzelmüller; Bergum, Kristin; Ellingsen, Josef Gert Åsheim; Grini, Sigbjørn; Sky, Thomas Neset & Aarseth, Bjørn Brevig (2017). Omvisning for Arendal VGS.
• Bathen, Marianne Etzelmüller; Borgersen, Jon Arthur; Grini, Sigbjørn; Johansen, Klaus Magnus H; Nyborg, Martin; Olsen, Vegard Skiftestad & Vines, Lasse (2017). Omvisning FAM.
• Monakhov, Edouard; Bathen, Marianne Etzelmüller; Bergum, Kristin; Sky, Thomas Neset & Weiser, Philip Michael (2017). Omvisning for the National Natural Science Foundation of China.
• Riise, Heine Nygard; Bathen, Marianne Etzelmüller; Borgersen, Jon Arthur; Grini, Sigbjørn & Johansen, Klaus Magnus H (2017). Besøk frå Nanoskolen 2017.
• Riise, Heine Nygard; Bathen, Marianne Etzelmüller; Grini, Sigbjørn; Olsen, Vegard Skiftestad & Sky, Thomas Neset (2017). Omvisning MENA.

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