mariebat

• Hommedal, Ylva Knausgård; Bathen, Marianne Etzelmüller; Reinertsen, Vilde Mari; Johansen, Klaus Magnus H; Vines, Lasse & Frodason, Ymir Kalmann (2024). Theoretical modeling of defect diffusion in wide bandgap semiconductors. Journal of Applied Physics. ISSN 0021-8979. 135(17). doi: 10.1063/5.0205866.
• Bathen, Marianne Etzelmüller; Kumar, Piyush; Ghezellou, Misagh; Belanche, Manuel; Vines, Lasse & Ul-Hassan, Jawad [Show all 7 contributors for this article] (2024). Dual configuration of shallow acceptor levels in 4H-SiC. Materials Science in Semiconductor Processing. ISSN 1369-8001. 177. doi: 10.1016/j.mssp.2024.108360. Full text in Research Archive
• Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Galeckas, Augustinas; Kumar, Piyush; Kuznetsov, Andrej & Grossner, Ulrike [Show all 7 contributors for this article] (2024). Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime. Materials Science in Semiconductor Processing. ISSN 1369-8001. 176. doi: 10.1016/j.mssp.2024.108316. Full text in Research Archive
• Kumar, Piyush; Martins, Maria I. M.; Bathen, Marianne Etzelmüller; Prokscha, Thomas & Grossner, Ulrike (2024). Al-implantation induced damage in 4H-SiC. Materials Science in Semiconductor Processing. ISSN 1369-8001. 174. doi: 10.1016/j.mssp.2024.108241. Full text in Research Archive
• Kumar, Piyush; Belanche, Manuel; Für, Natalija; Guzenko, Luka; Woerle, Judith & Bathen, Marianne Etzelmüller [Show all 7 contributors for this article] (2023). Energy-Dependent Impact of Proton Irradiation on 4H-SiC Schottky Diodes. Materials Science Forum. ISSN 0255-5476. 1092, p. 187–192. doi: 10.4028/p-0y444y.
• Belanche, Manuel; Bathen, Marianne Etzelmüller; Kumar, Piyush; Dorfer, Christian; Martinella, Corinna & Grossner, Ulrike (2023). Minority Carrier Traps Induced by Neutron Reactions with 4H-SiC. Defect and Diffusion Forum. ISSN 1012-0386. 426, p. 23–28. doi: 10.4028/p-724d7y.
• Martinella, Corinna; Bathen, Marianne Etzelmüller; Javanainen, Arto & Grossner, Ulrike (2023). Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs. Materials Science Forum. ISSN 0255-5476. 1090, p. 179–184. doi: 10.4028/p-3y3lv4.
• Race, Salvatore; Kumar, Piyush; Natzke, Philipp; Kovacevic-Badstuebner, Ivana; Bathen, Marianne Etzelmüller & Romano, Gianpaolo [Show all 12 contributors for this article] (2023). Gate Impedance Analysis of SiC power MOSFETs with SiO2 and High-k Dielectric. Proceedings of the International Symposium on Power Semiconductor Devices & ICs. ISSN 1063-6854. p. 9–12. doi: 10.1109/ISPSD57135.2023.10147725.
• Kumar, Piyush; Martins, Maria M.; Bathen, Marianne Etzelmüller; Woerle, Judith; Prokscha, Thomas & Grossner, Ulrike (2023). Investigation of the SiO2-SiC Interface Using Low-Energy Muon-Spin-Rotation Spectroscopy. Physical Review Applied. ISSN 2331-7019. 19. doi: 10.1103/PhysRevApplied.19.054025.
• Dorfer, Christian; Bathen, Marianne Etzelmüller; Race, Salvatore; Kumar, Piyush; Tsibizov, Alexander & Woerle, Judith [Show all 7 contributors for this article] (2023). Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique . Applied Physics Letters. ISSN 0003-6951. 122. doi: 10.1063/5.0142217.
• Für, Natalija; Belanche, Manuel; Martinella, Corinna; Kumar, Piyush; Bathen, Marianne Etzelmüller & Grossner, Ulrike (2023). Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation. IEEE Transactions on Nuclear Science. ISSN 0018-9499. 70(8), p. 1892–1899. doi: 10.1109/TNS.2023.3242760.
• Bathen, Marianne Etzelmüller; Selnesaunet, Gard Momrak; Enga, Marius; Kjeldby, Snorre Braathen; Müting, Johanna & Vines, Lasse [Show all 7 contributors for this article] (2023). Charge State Control Over Point Defects in SiC Devices. Defect and Diffusion Forum. ISSN 1012-0386. 425, p. 35–42. doi: 10.4028/p-6ho92o. Full text in Research Archive
• Kumar, Piyush; Martins, Maria M.; Bathen, Marianne Etzelmüller; Woerle, Judith; Prokscha, Thomas & Grossner, Ulrike (2022). Depth-Resolved Study of the SiO2- SiC Interface Using Low-Energy Muon Spin Rotation Spectroscopy. Materials Science Forum. ISSN 0255-5476. 1062, p. 315–319. doi: 10.4028/p-w73601.
• Bathen, Marianne Etzelmüller; Lew, C. T.-K.; Woerle, Judith; Dorfer, Christian; Grossner, Ulrike & Castelletto, Stefania [Show all 7 contributors for this article] (2022). Characterization methods for defects and devices in silicon carbide. Journal of Applied Physics. ISSN 0021-8979. 131(14). doi: 10.1063/5.0077299.
• Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Grossner, Ulrike & Vines, Lasse (2022). Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC. Materials Science Forum. ISSN 0255-5476. 1062, p. 371–375. doi: 10.4028/p-ryui6b. Full text in Research Archive
• Galeckas, Augustinas; Karsthof, Robert Michael; Kingsly, Gana; Kok, Angela; Bathen, Marianne Etzelmüller & Vines, Lasse [Show all 7 contributors for this article] (2022). Cross-Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations. Physica Status Solidi (a) applications and materials science. ISSN 1862-6300. p. 1–7. doi: 10.1002/pssa.202200449. Full text in Research Archive
• Hebnes, Oliver Lerstøl; Bathen, Marianne Etzelmüller; Schøyen, Øyvind Sigmundson; Winther-Larsen, Sebastian Gregorius; Vines, Lasse & Hjorth-Jensen, Morten (2022). Predicting solid state material platforms for quantum technologies. npj Computational Materials. ISSN 2057-3960. 8(1). doi: 10.1038/s41524-022-00888-3. Full text in Research Archive
• Reed, B.P.; Bathen, Marianne Etzelmüller; Ash, J.W.R.; Meara, C.J.; Zakharov, A.A. & Goss, J.P. [Show all 9 contributors for this article] (2022). Diamond (111) surface reconstruction and epitaxial graphene interface. Physical review B (PRB). ISSN 2469-9950. 105(20). doi: 10.1103/PhysRevB.105.205304.
• Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Kuznetsov, Andrej & Vines, Lasse (2022). Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 131. doi: 10.1063/5.0077308. Full text in Research Archive
• Bathen, Marianne Etzelmüller & Vines, Lasse (2021). Manipulating Single-Photon Emission from Point Defects in Diamond and Silicon Carbide. Advanced Quantum Technologies. 4. doi: 10.1002/qute.202100003. Full text in Research Archive
• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Karsthof, Robert Michael; Delteil, Aymeric; Sallet, Vincent & Kuznetsov, Andrej [Show all 7 contributors for this article] (2021). Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide. Physical review B (PRB). ISSN 2469-9950. 104. doi: 10.1103/PhysRevB.104.045120. Full text in Research Archive
• Woerle, Judith; Bathen, Marianne Etzelmüller; Prokscha, Thomas; Galeckas, Augustinas; Ayedh, Hussein Mohammed Hussein & Vines, Lasse [Show all 7 contributors for this article] (2020). Muon Interaction with Negative-U and High-Spin-State Defects: Differentiating Between C and Si Vacancies in 4H-SiC. Physical Review Applied. ISSN 2331-7019. 14. doi: 10.1103/PhysRevApplied.14.054053. Full text in Research Archive
• Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2020). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Physical review B (PRB). ISSN 2469-9950. 102(18). doi: 10.1103/PhysRevB.102.184111. Full text in Research Archive Show summary

  The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photoluminescence spectroscopy. A comprehensive model is suggested describing the evolution and interconversion of irradiation-induced point defects during annealing below 1000 ∘C. The model proposes the EH4 and EH5 traps frequently found by DLTS to originate from the (+/0) charge transition level belonging to different configurations of the carbon antisite-carbon vacancy (CAV) complex. Furthermore, we show that the transformation channel between the silicon vacancy (VSi) and CAV is effectively blocked under n-type conditions, but becomes available in samples where the Fermi level has moved towards the center of the band gap due to irradiation-induced donor compensation. The annealing of VSi and the carbon vacancy (VC) is shown to be dominated by recombination with residual self-interstitials at temperatures of up to 400 ∘C. Going to higher temperatures, a decay of the CAV pair density is reported which is closely correlated to a renewed increase of VC concentration. A conceivable explanation for this process is the dissociation of the CAV pair into separate carbon anitisites and VC defects. Lastly, the presented data supports the claim that the removal of free carriers in irradiated SiC is due to introduced compensating defects and not passivation of shallow nitrogen donors.

• Bathen, Marianne Etzelmüller; Vines, Lasse & Coutinho, José (2020). First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC. Journal of Physics: Condensed Matter. ISSN 0953-8984. 33(7). doi: 10.1088/1361-648X/abc804. Full text in Research Archive Show summary

  Point defects in solids are promising single-photon sources with application in quantum sensing, computing and communication. Herein, we describe a theoretical framework for studying electric field effects on defect-related electronic transitions, based on density functional theory calculations with periodic boundary conditions. Sawtooth-shaped electric fields are applied perpendicular to the surface of a two-dimensional defective slab, with induced charge singularities being placed in the vacuum layer. The silicon vacancy (VSi) in 4H-SiC is employed as a benchmark system, having three zero-phonon lines in the near-infrared (V1, V1' and V2) and exhibiting Stark tunability via fabrication of Schottky barrier or p-i-n diodes. In agreement with experimental observations, we find an approximately linear field response for the zero-phonon transitions of VSi involving the decay from the first excited state (named V1 and V2). However, the magnitude of the Stark shifts are overestimated by nearly a factor of 10 when comparing to experimental findings. We discuss several theoretical and experimental aspects which could affect the agreement.

• Vasquez, Geraldo Cristian; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Bazioti, Kalliopi; Johansen, Klaus Magnus H & Maestre, D. [Show all 11 contributors for this article] (2020). Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles. Nano Letters. ISSN 1530-6984. 20(12), p. 8689–8695. doi: 10.1021/acs.nanolett.0c03472. Full text in Research Archive
• Reinertsen, Vilde Mari; Weiser, Philip Michael; Frodason, Ymir Kalmann; Bathen, Marianne Etzelmüller; Vines, Lasse & Johansen, Klaus Magnus H (2020). Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals. Applied Physics Letters. ISSN 0003-6951. 117. doi: 10.1063/5.0027333. Full text in Research Archive Show summary

  The effect of lattice anisotropy on the diffusion of hydrogen (H)/deuterium (2H) in b-Ga2O3 was investigated using secondary ion mass spectrometry (SIMS) and hybrid-functional calculations. Concentration-depth profiles of 2H-implanted single crystals show that 2H can diffuse along the direction perpendicular to the (010) surface at temperatures as low as 300 degC, whereas diffusion along the direction perpendicular to the (-201) surface occurs only around 500 degC. For both directions, the evolution of the 2H concentration–depth profiles after heat treatments can be modeled by trap-limited diffusion. Moreover, the traps can be present in the as-received crystals or created during ion implantation. Comparison of the experimentally obtained binding energy for 2H to the trap (2.3+/-0.2 eV) with the binding energies determined from first-principles calculations suggests that intrinsic point defects (e.g., VGa^ib) or defect complexes (e.g., VGa(2)VO(2)) are excellent candidates for the trap and will play a crucial role in the diffusion of H or 2H in b-Ga2O3.

• Bathen, Marianne Etzelmüller; Linnarsson, Margareta; Ghezellou, Mizagh; Ul Hassan, Jawad & Vines, Lasse (2020). Influence of Carbon Cap on Self-Diffusion in Silicon Carbide. Crystals. ISSN 2073-4352. 10(9). doi: 10.3390/cryst10090752. Full text in Research Archive Show summary

  Self-diffusion of carbon (12C and 13C) and silicon (28Si and 30Si) in 4H silicon carbide has been investigated by utilizing a structure containing an isotope purified 4H-28Si12C epitaxial layer grown on an n-type (0001) 4H-SiC substrate, and finally covered by a carbon capping layer (C-cap). The 13C and 30Si isotope profiles were monitored using secondary ion mass spectrometry (SIMS) following successive heat treatments performed at 2300−−2450∘C in Ar atmosphere using an inductively heated furnace. The 30Si profiles show little redistribution within the studied temperature range, with the extracted diffusion lengths for Si being within the error bar for surface roughening during annealing, as determined by profilometer measurements. On the other hand, a significant diffusion of 13C was observed into the isotope purified layer from both the substrate and the C-cap. A diffusivity of D=8.3×106e−10.4/kBT cm2/s for 13C was extracted, in contrast to previous findings that yielded lower both pre-factors and activation energies for C self-diffusion in SiC. The discrepancy between the present measurements and previous theoretical and experimental works is ascribed to the presence of the C-cap, which is responsible for continuous injection of C interstitials during annealing, and thereby suppressing the vacancy mediated diffusion.

• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Coutinho, José & Vines, Lasse (2020). Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 127(8). doi: 10.1063/1.5140659. Full text in Research Archive Show summary

  The silicon vacancy (VSi) in 4H-SiC is a room temperature single-photon emitter with a controllable high-spin ground state and is a promising candidate for future quantum technologies. However, controlled defect formation remains a challenge, and, recently, it was shown that common formation methods such as proton irradiation may, in fact, lower the intensity of photoluminescence (PL) emission from VSi as compared to other ion species. Herein, we combine hybrid density functional calculations and PL studies of the proton-irradiated n-type 4H-SiC material to explore the energetics and stability of hydrogen-related defects, situated both interstitially and in defect complexes with VSi, and confirm the stability of hydrogen in different interstitial and substitutional configurations. Indeed, VSi-H is energetically favorable if VSi is already present in the material, e.g., following irradiation or ion implantation. We demonstrate that hydrogen has a significant impact on electrical and optical properties of VSi, by altering the charge states suitable for quantum technology applications, and provide an estimate for the shift in thermodynamic transition levels. Furthermore, by correlating the theoretical predictions with PL measurements of 4H-SiC samples irradiated by protons at high (400 C) and room temperatures, we associate the observed quenching of VSi emission in the case of high-temperature and high-fluence proton irradiation with the increased mobility of Hi, which may initiate VSi-H complex formation at temperatures above 400 C. The important implication of hydrogen being present is that it obstructs the formation of reliable and efficient single-photon emitters based on silicon vacancy defects in 4H-SiC.

• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, José [Show all 8 contributors for this article] (2019). Electrical charge state identification and control for the silicon vacancy in 4H-SiC. npj Quantum Information. ISSN 2056-6387. 5(1), p. 1–9. doi: 10.1038/s41534-019-0227-y. Full text in Research Archive
• Bathen, Marianne Etzelmüller; Coutinho, José; Ayedh, Hussein Mohammed Hussein; Hassan, Jawad U; Farkas, Ildiko & Öberg, Sven [Show all 9 contributors for this article] (2019). Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment. Physical review B (PRB). ISSN 2469-9950. 100(1), p. 014103-1–014103-15. doi: 10.1103/PhysRevB.100.014103. Full text in Research Archive
• Ayedh, Hussein Mohammed Hussein; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Hassan, Jawad U; Bergman, J. P. & Nipoti, Roberta [Show all 8 contributors for this article] (2018). Controlling the carbon vacancy in 4H-SiC by thermal processing. ECS Transactions. ISSN 1938-5862. 86(12), p. 91–97. doi: 10.1149/08612.0091ecst.
• Bathen, Marianne Etzelmüller; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Farkas, Ildiko; Janzen, Erik & Svensson, Bengt Gunnar (2018). Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiC. Materials Science Forum. ISSN 0255-5476. 924, p. 200–203. doi: 10.4028/www.scientific.net/MSF.924.200.

View all works in Cristin

• Bathen, Marianne Etzelmüller (2024). Norway’s green quantum future.
• Bathen, Marianne Etzelmüller (2024). Kvanteteknologiens betydning for samfunnsutviklingen. En ny æra?
• Bathen, Marianne Etzelmüller & Hjorth-Jensen, Morten (2024). Where are we going? Quantum technology for future applications.
• Bathen, Marianne Etzelmüller (2024). Hvor går veien? Kvanteteknologiens potensiale i fremtidens teknologi.
• Bathen, Marianne Etzelmüller (2024). Point defects in semiconductors for quantum technologies.
• Bathen, Marianne Etzelmüller (2024). Deltagelse i Abels Tårn. [Radio]. NRK P2.
• Bathen, Marianne Etzelmüller (2024). Hvorfor kvanteteknologi er det mest spennende du kan drive med.
• Bathen, Marianne Etzelmüller; Olsen, Vegard Skiftestad & Vines, Lasse (2024). Hvor går veien? Kvanteteknologiens potensiale i fremtidens teknologi​. .
• Bathen, Marianne Etzelmüller; Hebnes, Oliver Lerstøl; Schøyen, Øyvind; Winther-Larsen, Sebastian G.; Vines, Lasse & Hjorth-Jensen, Morten (2024). Predicting solid state material platforms for quantum technologies .
• Bathen, Marianne Etzelmüller & Vines, Lasse (2024). Semiconductors as quantum materials - Ongoing research at the LENS group.
• Ousdal, Erlend Lemva; Bathen, Marianne Etzelmüller & Vines, Lasse (2023). Controlling directionality of emission from quantum defects through microstructures in Silicon Carbide .
• Ousdal, Erlend Lemva; Bathen, Marianne Etzelmüller & Vines, Lasse (2023). Optical and electrical characterization of potential single photon emitters in 6H silicon carbide .
• Bathen, Marianne Etzelmüller (2023). Foredrag om MiNaLab og kvanteteknologi for Byråd for kultur og næring i Oslo kommune .
• Bathen, Marianne Etzelmüller & Vines, Lasse (2023). Point defects in semiconductors for quantum technologies​ ​ Ongoing research at ​ the University of Oslo​.
• Bathen, Marianne Etzelmüller (2023). QUANTUM COMPUTERS​ How they work and how to make them ​.
• Bathen, Marianne Etzelmüller (2023). Deltakelse i Abels Tårn, NRK, 03.11.2023. [Radio]. NRK.
• Bathen, Marianne Etzelmüller (2023). How to build a quantum technology platform.
• Bathen, Marianne Etzelmüller & Vines, Lasse (2023). Studieretning i kvanteteknologi​.
• Bathen, Marianne Etzelmüller; Kumar, Piyush; Ghezellou, Misagh; Belanche, Manuel; Vines, Lasse & Ul-Hassan, Jawad [Show all 7 contributors for this article] (2023). Dual configuration of shallow acceptor levels in 4H-SiC.
• Bathen, Marianne Etzelmüller; Razinkovas, Lukas; Linderälv, Christopher; Vines, Lasse & Grossner, Ulrike (2023). Quantum pressure sensing using the vibronic spectrum of color centers .
• Bathen, Marianne Etzelmüller; Johnson, Brett C.; Galeckas, Augustinas; martins, maria m; Kumar, Piyush & Silkinis, Rokas [Show all 11 contributors for this article] (2023). Doping-induced color centers in silicon carbide ​.
• Bathen, Marianne Etzelmüller; Enga, Marius Johan; Selnesaunet, Gard Momrak; Kjeldby, Snorre Braathen; Galeckas, Augustinas & Müting, Johanna [Show all 8 contributors for this article] (2022). Charge state control over point defects in SiC devices.
• Bathen, Marianne Etzelmüller; Kumar, Piyush; martins, maria m; Woerle, Judith; Prokscha, Thomas & Grossner, Ulrike (2022). Interaction of in-diffused nitrogen with C and Si lattice sites and vacancies after thermal oxidation and NO annealing.
• Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Kumar, Piyush; Galeckas, Augustinas; Kuznetsov, Andrej & Vines, Lasse [Show all 7 contributors for this article] (2022). Impact of C-injection in 4H-SiC on defect distribution and minority carrier lifetime.
• Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Kumar, Piyush; Galeckas, Augustinas; Kuznetsov, Andrej Yu. & Vines, Lasse [Show all 7 contributors for this article] (2022). Impact of C-injection in SiC on defect distribution and minority carrier lifetime.
• Bathen, Marianne Etzelmüller; Hebnes, Oliver Lerstøl; Schøyen, Øyvind Sigmundson; Winther-Larsen, Sebastian Gregorius; Vines, Lasse & Hjorth-Jensen, Morten (2022). Predicting Solid State Material Platforms for Quantum Technologies.
• Einevoll, Gaute & Bathen, Marianne Etzelmüller (2022). Podcast #63: Om kvantedatamaskiner. [Internet]. Podcast "Vett og vitenskap".
• Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2022). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
• Galeckas, Augustinas; Karsthof, Robert Michael; Gana, Kingsly; Kok, Angela; Bathen, Marianne Etzelmüller & Vines, Lasse [Show all 7 contributors for this article] (2022). Cross-sectional carrier lifetime profiling and deep level monitoring in silicon carbide films exhibiting variable carbon vacancy concentrations. Show summary

  We report on the carrier lifetime control over 150 μmthick 4H-SiC epitaxial layers via thermal generation and annihilation of carbon vacancy (VC) related Z1/2lifetime killer sites. The defect developments upon typical SiC processing steps, such as high- and moderate-temperature anneals in the presence of a carbon cap,are monitored by combining electrical characterization techniques capable of VC depth-profiling, capacitance-voltage (CV) and deep-level transient spectroscopy (DLTS), with a novel all-optical approach of cross-sectional carrier lifetime profiling across 4H-SiC epilayer/substrate based on imaging time-resolved photoluminescence (TRPL) spectroscopy in orthogonal pump-probe geometry,which readily exposes in-depth efficacy ofdefect reduction and surface recombination effects.The lifetime control is realized byinitialhigh-temperature treatment (1800ºC) to increase VC concentration to ~1013 cm-3 level followed by a moderate-temperature (1500ºC) post-annealing of variable duration under C-rich thermodynamic equilibrium conditions. The post-annealing carried out for 5 hours in effect eliminates VCthroughout the entire ultra-thick epilayer. The reduction of VC-related Z1/2 sites is proven by a significant lifetime increase from 0.8 μs to 2.5 μs. We discuss the upper limit of lifetimes in terms of carrier surface leakage and presence of other non-radiative recombination centers besides Z1/2, possibly related to residual impurities such as boron.

• Faraj, Sayed; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Myrold, Andreas; Stene-Johansen, Ingar & Jørstad, Øystein Kalsnes [Show all 7 contributors for this article] (2022). Retinal injuries in seven teenage boys from the same handheld laser. American Journal of Ophthalmology Case Reports. 27. doi: 10.1016/j.ajoc.2022.101596. Full text in Research Archive
• Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Linnarsson, Margareta; Galeckas, Augustinas; Kuznetsov, Andrej & Grossner, Ulrike [Show all 7 contributors for this article] (2021). Stability, evolution and diffusion of intrinsic point defects in 4H-SiC.
• Bathen, Marianne Etzelmüller (2021). Resolving the vibronic fine structure of emission from the silicon vacancy in 4H silicon carbide​.
• Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2021). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
• Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Enga, Marius & Vines, Lasse (2021). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
• Bathen, Marianne Etzelmüller (2021). Paneldeltager på radioprogrammet Abels Tårn. [Radio]. NRK P2. Show summary

  Hvorfor blir Creme Fraichen flytende når man rører i den? • Kan man bygge luftskip med vakuum med nye supersterke materialer? • Er det bedre for de snille bakteriene å vaske med eddik? • Alt du (ikke) vil vite om harskt fett • Finnes det materialer som kan stoppe et magnetfelt? • Skal man pusse tenna før eller etter frokost? • Brød fra brødskjæreren: plastpose først, så originalemballasje, eller motsatt? Panelet: Nanoteknolog Marianne Etzelmüller Bathen Kjemiker Einar Uggerud Mikrobiolog Jessica Lönn-Stensrud

• Bathen, Marianne Etzelmüller (2020). Deltagelse i panelet til Radioprogrammet Abels Tårn. [Radio]. NRK P2. Show summary

  Det sies at veps og bier skilte lag og blei til ulike arter da den ene blei kjøtteter og den andre vegetarianer. Kan det samme skje med mennesket? • Kosthold og artsdannelse. Kikertspisere vs kotelettspisere. • Siste nytt fra usynlighetskappefronten • Succusjonens rolle i homøopatien • Hvordan kommer meitemark seg til fjerne øyer? • Er slikkepottrester i maten farlig? • En kortstokk og tilfeldigheter • Hvordan klarte bisonen å ikke bli utrydda? • Tredemølle med stigning vs. løping i ekte motbakke I panelet Nanoteknolog Marianne Etzelmüller Bathen Kjemiker Ole Zwang Paleontolog Lene Liebe Delsett

• Bathen, Marianne Etzelmüller & Olsen, Vegard Skiftestad (2020). Foredrag for FA-studenter om halvlederfysikk.
• Bathen, Marianne Etzelmüller & Olsen, Vegard Skiftestad (2020). Foredrag for MENA-studenter om halvlederfysikk .
• Bathen, Marianne Etzelmüller (2020). Deltagelse på Abels Tårn, NRK P2. [Radio]. NRK P2. Show summary

  Hvorfor blir noen IKKE bitt av mygg (til alle andres ergrelse), og hvorfor blir man til spagetti om man hopper ned i et sort hull? Hele menyen: - Kan det bryte ut en helt ny pandemi på romstasjonen? - Hvorfor bærer lyden så godt over vann? - Skyldes pandemier menneskets tukling med naturen? - Kan koronaisolasjon ta knekken på andre sjukdommer? - Kan virus og bakterier bli resistente mot antibac? - Hvorfor bryter Newtons lover sammen i ekstreme situasjoner? - Sjefer som ikke blir bitt av mygg - Vokser håret mer når man sover? - Er elbiler virkelig klimavennlige også i land med BARE kullkraft? - Blir insekter gamle og grå som oss? I panelet: Insektøkolog Anne Sverdrup Thygeson Fysiker Marianne Etzelmüller Bathen Lege Steinar Madsen

• Bathen, Marianne Etzelmüller (2019). The future of quantum computing: Beyond the superconducting paradigm.
• Bathen, Marianne Etzelmüller (2019). Intervju av TV2 Nyhetskanalen, kl 0710, om kvantedatamaskiner. [TV]. TV2 Nyhetskanalen.
• Bathen, Marianne Etzelmüller & Jemterud, Torkild (2019). Abels Tårn. [Radio]. NRK P2.
• Bathen, Marianne Etzelmüller & Jemterud, Torkild (2019). Abels tårn . [Radio]. NRK P2. Show summary

  En lytter fra Nord-Norge vil gjerne få nok luft, men slippe en halv meter snø inn gjennom soveromsvinduet på vinteren. Kan potteplanter gjøre susen? - Potteplanter som oksygenprodusenter på soverommet - Nanosvamper fjerner grønske på terrassen - Er det en dag i året der sola står opp på likt langs en hel lengdegrad? - Skyldes årets enorme mengder fnokk tørkestress fra forrige sommer? - Hvorfor kommer det blod og fiskesøl ut av tinende poser fra fryseren? - "Ingen regel uten unntak", heter det. Et paradoks? - Hvordan kan vaniljerot være en plante, når den ikke har klorofyll? I panelet: Botaniker Charlotte Sletten Bjorå Nanoteknolog Marianne Bathen Matematiker Andreas Nakkerud

• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, J [Show all 7 contributors for this article] (2019). Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-SiC.
• Bathen, Marianne Etzelmüller (2019). Kvantedatamaskiner - prinsipp, funksjon, og hvordan de nokså enkelt kan lages på labben.
• Bathen, Marianne Etzelmüller & Olsen, Vegard Skiftestad (2019). Omvisning for FA og ELITE.
• Bathen, Marianne Etzelmüller & Caroline, Enge (2019). Norske studenter lager spill til «den neste store teknologien»: Kvantedatamaskinen. [Newspaper]. Aftenposten. Show summary

  Vemund Falch og Christian Johnsens sommerjobb er å lage et pokerspill som kan brukes på en kvantedatamaskin. I verden foregår et kappløp for å forstå hva annet maskinene kan brukes til.

• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, José [Show all 8 contributors for this article] (2019). Electrical charge-state identification and emission intensity modulation of the silicon vacancy in 4H-SiC.
• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, José [Show all 7 contributors for this article] (2019). Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-Si. Show summary

  The high-spin ground state and bright single-photon emission of the silicon vacancy (VSi) in 4H-SiC offer exciting possibilities for quantum technology and spintronics applications, especially as both are available at room temperature [1,2]. However, quantum compatibility only exists for the singly negative VSi, and single-photon counts are still too low to realize efficient spin-photon interfaces without resorting to complex nanofabrication methods [3]. Herein, we demonstrate enhanced optical emission from VSi using Schottky barrier diode (SBD) formation, and attribute our findings to increased occupancies of VSi-1.

• Bathen, Marianne Etzelmüller & Vines, Lasse (2019). Point defects in semiconductors for quantum technology: Example of silicon vacancy in silicon carbide.
• Bathen, Marianne Etzelmüller (2019). Abels Tårn. [Radio]. NRK P2. Show summary

  Nå står kampen om gruveavfall i Repparfjorden. Men gruven skal produsere både kobber og sølv som brukes i solceller. Er det egentlig bærekraftig å skulle produsere nok solceller til å erstatte all verdens fosile energikilder? - Hvis man tar stikling av en stikling av en stikling etc - er det da samme plante 1000 år seinere? - Noen sier det går strøm i telefonladere som står i, gjør det det? - Er egentlig solceller bærekraftig - når man ser på metallene som brukes for å lage dem? - Hvorfor står det Aloe barbadensis på innholdsfortegnelsen på Aloe vera produkter? - Hvordan kan en qbit være både 0 og 1 på en gang? I panelet: Botaniker Charlotte Sletten Bjorå Elektroingeniør Sverre Holm Kvantefysiker/nanoteknolog Marianne Etzelmüller Bathen

• Bathen, Marianne Etzelmüller (2019). Kvantedatamaskiner - prinsipp, funksjon, og hvordan de nokså enkelt kan lages på labben. Show summary

  Datamaskiner styrer en stadig større del av hverdagen vår, og når bruken av digitale verktøy øker, trenger vi også kraftigere datamaskiner. Det finnes haugevis av oppgaver som dagens superdatamaskiner enten er for svake til, eller ikke laget for, å gjøre. Forskere over hele verden jobber med dette problemet, og kvantedatamaskiner har seilt frem som en mulig løsning. Men, kvantedatamaskinene som har blitt laget så langt, er bygd opp av veldig få såkalte kvantebits. Disse lages av dyre materialer, er veldig vanskelige å lage og kan kun operere ved ekstremt lave temperaturer. Derfor ønsker man å finne et bedre alternativ, for eksempel ved å bruke halvledermaterialer, som ellers brukes som transistorer, lys-emitterende dioder og solceller. Marianne Etzelmüller Bathen er forsker ved Fysisk institutt, og jobber med å lage og kontrollere kvantebits i halvledere. Hun vil snakke om hvordan de nye kvantedatamaskinene fungerer, hva de kan brukes til, hvordan de skiller seg fra de gamle og hvordan hun og hennes kolleger jobber for å legge grunnlaget for en fremtidig IT-revolusjon.

• Bathen, Marianne Etzelmüller; Borgersen, Jon Arthur; Karlsen, Kjetil; Nyborg, Martin; Olsen, Vegard Skiftestad & Reinertsen, Vilde Mari [Show all 7 contributors for this article] (2019). Skolebesøk ved MiNaLab.
• Bathen, Marianne Etzelmüller & Vogt, Yngve (2018). Jakter på fremtidens IT-revolusjon. [Journal]. Teknisk ukeblad.
• Ayedh, Hussein Mohammed Hussein; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Ul Hassan, Jawad; Bergman, J. P. & Nipoti, Roberta [Show all 8 contributors for this article] (2018). Controlling the Carbon Vacancy in 4H-SiC By Thermal Processing.
• Bathen, Marianne Etzelmüller & Vogt, Yngve (2018). Defekte materialer kan brukes til kvantedatamaskiner. [Journal]. Apollon. Show summary

  Forskere legger nå grunnlaget for fremtidens kvantedatamaskiner ved å skyte vekk atomer.

• Bathen, Marianne Etzelmüller (2018). Hvordan kan vi lage fremtidens datamaskiner? .
• Coutinho, José; Gouveia, J. D.; Demmouche, K.; Bathen, Marianne Etzelmüller & Svensson, Bengt Gunnar (2018). Carbon vacancies and interstitials in 3C- and 4H-SiC: theoretical milestones and challenges.
• Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Frodason, Ymir Kalmann; Vines, Lasse & Svensson, Bengt Gunnar (2018). Tuning silicon vacancy formation in 4H-SiC via proton irradiation for quantum technology.
• Bathen, Marianne Etzelmüller; Vines, Lasse; Galeckas, Augustinas; Frodason, Ymir Kalmann & Svensson, Bengt Gunnar (2018). Correlating charge state transitions of the Si vacancy to the S1/S2 peaks in DLTS spectra of n-type 4H-SiC.
• Bathen, Marianne Etzelmüller; Vines, Lasse; Galeckas, Augustinas; Frodason, Ymir Kalmann & Svensson, Bengt Gunnar (2018). Charge state transitions of the silicon vacancy in 4H-SiC: Combined DLTS, PL and DFT study.
• Bathen, Marianne Etzelmüller; Ingebrigtsen, Mads Eide; Olsen, Vegard Skiftestad; Rønning, Vegard & Vines, Lasse (2018). Omvisning for studieprogrammene FA og ELITE .
• Bathen, Marianne Etzelmüller; Vines, Lasse & Riise, Heine Nygard (2018). Ina tar valget: halvlederfysikk. Show summary

  Informasjonsvideo om pågående forskningsprosjekter og muligheter for å ta mastergrad ved gruppe for halvlederfysikk (LENS) ved Universitetet i Oslo (UiO). Bidraget ble publisert som en del av serien Ina tar valget på Snapchat-kanalen til fysisk institutt ved UiO.

• Monakhov, Edouard; Bathen, Marianne Etzelmüller; Bergum, Kristin; Sky, Thomas Neset & Weiser, Philip Michael (2017). Omvisning for the National Natural Science Foundation of China.
• Bathen, Marianne Etzelmüller; Borgersen, Jon Arthur; Grini, Sigbjørn; Johansen, Klaus Magnus H; Nyborg, Martin & Olsen, Vegard Skiftestad [Show all 7 contributors for this article] (2017). Omvisning FAM.
• Enga, Marius Johan; Vines, Lasse & Bathen, Marianne Etzelmüller (2021). Exploring Defects in Silicon Carbide for Quantum Technologies; A Density Functional Theory Study. Universitetet i Oslo.
• Selnesaunet, Gard Momrak; Vines, Lasse & Bathen, Marianne Etzelmüller (2021). Nanostructuring of SiC for novel defect-based quantum technologies. Universitetet i Oslo. Show summary

  Point defects in semiconductors have emerged as viable candidates for quantumbased technologies such as quantum computing, communication, and sensing. The present work is related to quantum compatible point defects in silicon carbide (SiC), particularly the silicon vacancy, a point defect and material system that has received considerable research interest in the last few years. In this thesis, a fabrication process was developed for producing structures in SiC that can be used as, e.g., waveguides for single-photon emission. This was performed by depositing a SiO2 layer with plasma chemical vapor deposition (PECVD) on a high purity 4H-SiC wafer. Next, with photolithography, the SiO2 layer was patterned with a photoresist mask in a reactive ion etching (RIE) step. The patterned SiO2 layer was then used as a hard mask for a subsequent RIE step, finalizing the photonic device. A thin nickel layer was deposited on the structures with physical vapor deposition (PVD) for the charge-state control through a liftoff process with a photoresist mask. Defect creation was achieved by 21 keV He implantation to a fluence of 1×1011 cm−2 with an ion implanter. In a scanning electron microscope (SEM), the device morphology showed sharply defined features with almost vertical sidewalls. The diffraction limit from the photolithography resulted in increasingly tilted sidewalls as the structures decreased in size. The optical properties were characterized with cathodoluminescence (CL) spectroscopy and exhibited emission in the V1 and V1’ zero-phonon lines (ZPLs) associated with the VSi. Charge-state control of the VSi was identified by enhancing the V− Si CL emission intensity in the depletion region of the Schottky contact, with a reduction in intensity towards the depletion region edge. By utilizing angle-resolved cathodoluminescence (ARCL) spectroscopy, the radiation profiles of the photonic structures were shown to be altered compared to the Lambertian radiation profile of the implanted wafer. Though no electromagnetic wave propagation in discrete modes (waveguiding effect) was observed, the photonic devices enhanced the emission intensity of the VSi in all directions by functioning as a lens with a higher numerical aperture than the wafer, and the lens had characteristics similar to a combination of a solid immersion lens (SIL) and an optical fiber. The findings presented herein are important for further photonic device fabrication in 4H-SiC, and lay the groundwork for incorporating quantum compatible point defects in electrically driven quantum technology devices.

• Bathen, Marianne Etzelmüller (2020). Point Defects in silicon carbide for quantum technologies: Identification, tuning and control . det matematisk naturvitenskapelige fakultet.

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