mariebat

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Academic interests

I study defects in semiconductors that are promising candidates for quantum technology applications, such as quantum computing, communication, imaging and sensing. The defects I study are vacancies, that is, atoms missing from the semiconductor crystal structure, and I am focusing mostly on a material called silicon carbide. 

 

We create the qubit defects using an "ion cannon", or an ion implanter, and localize the defects using electric fields and laser light. Finally, we model the defects theoretically using density functional theory (DFT). 

 

Background 

2011-2016 Master of Science in Nanotechnology, NTNU

2014-2015 Exchange to the University of California, San Diego (UCSD)

 

Teaching

FYS2140, spring 2017  

FYS1120, fall 2017

FYS2140, spring 2018

FYS2140, spring 2019

FYS2210, fall 2019

 

Offices

2017-2019 Member of Tilsettingsutvalget at the Department of Physics

2018-2019 Member of the PhD program council at the MN faculty

 

Tags: SMN

Publications

  • Bathen, Marianne Etzelmüller & Vines, Lasse (2021). Manipulating Single-Photon Emission from Point Defects in Diamond and Silicon Carbide. Advanced Quantum Technologies. 4. doi: 10.1002/qute.202100003.
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Karsthof, Robert Michael; Delteil, Aymeric; Sallet, Vincent & Kuznetsov, Andrej [Show all 7 contributors for this article] (2021). Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide. Physical review B (PRB). ISSN 2469-9950. 104. doi: 10.1103/PhysRevB.104.045120.
  • Woerle, Judith; Bathen, Marianne Etzelmüller; Prokscha, Thomas; Galeckas, Augustinas; Ayedh, Hussein Mohammed Hussein & Vines, Lasse [Show all 7 contributors for this article] (2020). Muon Interaction with Negative-U and High-Spin-State Defects: Differentiating Between C and Si Vacancies in 4H-SiC. Physical Review Applied. ISSN 2331-7019. 14. doi: 10.1103/PhysRevApplied.14.054053. Full text in Research Archive
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2020). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Physical review B (PRB). ISSN 2469-9950. 102(18). doi: 10.1103/PhysRevB.102.184111. Full text in Research Archive
  • Bathen, Marianne Etzelmüller; Vines, Lasse & Coutinho, José (2020). First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC. Journal of Physics: Condensed Matter. ISSN 0953-8984. 33(7). doi: 10.1088/1361-648X/abc804. Full text in Research Archive
  • Vasquez, Geraldo Cristian; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Bazioti, Kalliopi; Johansen, Klaus Magnus H & Maestre, D. [Show all 11 contributors for this article] (2020). Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles. Nano Letters. ISSN 1530-6984. 20(12), p. 8689–8695. doi: 10.1021/acs.nanolett.0c03472. Full text in Research Archive
  • Reinertsen, Vilde Mari; Weiser, Philip Michael; Frodason, Ymir Kalmann; Bathen, Marianne Etzelmüller; Vines, Lasse & Johansen, Klaus Magnus H (2020). Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals. Applied Physics Letters. ISSN 0003-6951. 117. doi: 10.1063/5.0027333. Full text in Research Archive
  • Bathen, Marianne Etzelmüller; Linnarsson, Margareta; Ghezellou, Mizagh; Ul Hassan, Jawad & Vines, Lasse (2020). Influence of Carbon Cap on Self-Diffusion in Silicon Carbide. Crystals. ISSN 2073-4352. 10(9). doi: 10.3390/cryst10090752. Full text in Research Archive
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Coutinho, José & Vines, Lasse (2020). Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 127(8). doi: 10.1063/1.5140659. Full text in Research Archive
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, José [Show all 8 contributors for this article] (2019). Electrical charge state identification and control for the silicon vacancy in 4H-SiC. npj Quantum Information. ISSN 2056-6387. 5(1), p. 1–9. doi: 10.1038/s41534-019-0227-y. Full text in Research Archive
  • Bathen, Marianne Etzelmüller; Coutinho, José; Ayedh, Hussein Mohammed Hussein; Hassan, Jawad U; Farkas, Ildiko & Öberg, Sven [Show all 9 contributors for this article] (2019). Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment. Physical review B (PRB). ISSN 2469-9950. 100(1), p. 014103-1–014103-15. doi: 10.1103/PhysRevB.100.014103. Full text in Research Archive
  • Ayedh, Hussein Mohammed Hussein; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Hassan, Jawad U; Bergman, J. P. & Nipoti, Roberta [Show all 8 contributors for this article] (2018). Controlling the carbon vacancy in 4H-SiC by thermal processing. ECS Transactions. ISSN 1938-5862. 86(12), p. 91–97. doi: 10.1149/08612.0091ecst.
  • Bathen, Marianne Etzelmüller; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Farkas, Ildiko; Janzen, Erik & Svensson, Bengt Gunnar (2018). Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiC. Materials Science Forum. ISSN 0255-5476. 924, p. 200–203. doi: 10.4028/www.scientific.net/MSF.924.200.
  • Bathen, Marianne Etzelmüller & Linder, Jacob (2017). Spin Seebeck effect and thermoelectric phenomena in superconducting hybrids with magnetic textures or spin-orbit coupling. Scientific Reports. ISSN 2045-2322. 7, p. 1–13. doi: 10.1038/srep41409. Full text in Research Archive
  • Linder, Jacob & Bathen, Marianne Etzelmüller (2016). Spin caloritronics with superconductors: Enhanced thermoelectric effects, generalized Onsager response-matrix, and thermal spin currents. Physical Review B. Condensed Matter and Materials Physics. ISSN 1098-0121. 93(22). doi: 10.1103/PhysRevB.93.224509. Full text in Research Archive

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  • Bathen, Marianne Etzelmüller (2021). Paneldeltager på radioprogrammet Abels Tårn. [Radio]. NRK P2.
  • Bathen, Marianne Etzelmüller (2020). Deltagelse i panelet til Radioprogrammet Abels Tårn. [Radio]. NRK P2.
  • Bathen, Marianne Etzelmüller & Olsen, Vegard Skiftestad (2020). Foredrag for FA-studenter om halvlederfysikk.
  • Bathen, Marianne Etzelmüller & Olsen, Vegard Skiftestad (2020). Foredrag for MENA-studenter om halvlederfysikk .
  • Bathen, Marianne Etzelmüller (2020). Deltagelse på Abels Tårn, NRK P2. [Radio]. NRK P2.
  • Bathen, Marianne Etzelmüller (2019). Intervju av TV2 Nyhetskanalen, kl 0710, om kvantedatamaskiner. [TV]. TV2 Nyhetskanalen.
  • Bathen, Marianne Etzelmüller & Jemterud, Torkild (2019). Abels Tårn. [Radio]. NRK P2.
  • Bathen, Marianne Etzelmüller & Jemterud, Torkild (2019). Abels tårn . [Radio]. NRK P2.
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, J [Show all 7 contributors for this article] (2019). Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-SiC.
  • Bathen, Marianne Etzelmüller (2019). Kvantedatamaskiner - prinsipp, funksjon, og hvordan de nokså enkelt kan lages på labben.
  • Bathen, Marianne Etzelmüller & Olsen, Vegard Skiftestad (2019). Omvisning for FA og ELITE.
  • Bathen, Marianne Etzelmüller & Caroline, Enge (2019). Norske studenter lager spill til «den neste store teknologien»: Kvantedatamaskinen. [Newspaper]. Aftenposten.
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, José [Show all 8 contributors for this article] (2019). Electrical charge-state identification and emission intensity modulation of the silicon vacancy in 4H-SiC.
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, José [Show all 7 contributors for this article] (2019). Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-Si.
  • Bathen, Marianne Etzelmüller & Vines, Lasse (2019). Point defects in semiconductors for quantum technology: Example of silicon vacancy in silicon carbide.
  • Bathen, Marianne Etzelmüller (2019). Abels Tårn. [Radio]. NRK P2.
  • Bathen, Marianne Etzelmüller; Borgersen, Jon Arthur; Karlsen, Kjetil; Nyborg, Martin; Olsen, Vegard Skiftestad & Reinertsen, Vilde Mari [Show all 7 contributors for this article] (2019). Skolebesøk ved MiNaLab.
  • Bathen, Marianne Etzelmüller & Vogt, Yngve (2018). Jakter på fremtidens IT-revolusjon. [Journal]. Teknisk ukeblad.
  • Ayedh, Hussein Mohammed Hussein; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Ul Hassan, Jawad; Bergman, J. P. & Nipoti, Roberta [Show all 8 contributors for this article] (2018). Controlling the Carbon Vacancy in 4H-SiC By Thermal Processing.
  • Bathen, Marianne Etzelmüller & Vogt, Yngve (2018). Defekte materialer kan brukes til kvantedatamaskiner. [Journal]. Apollon.
  • Bathen, Marianne Etzelmüller (2018). Hvordan kan vi lage fremtidens datamaskiner? .
  • Coutinho, José; Gouveia, J. D.; Demmouche, K.; Bathen, Marianne Etzelmüller & Svensson, Bengt Gunnar (2018). Carbon vacancies and interstitials in 3C- and 4H-SiC: theoretical milestones and challenges.
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Frodason, Ymir Kalmann; Vines, Lasse & Svensson, Bengt Gunnar (2018). Tuning silicon vacancy formation in 4H-SiC via proton irradiation for quantum technology.
  • Bathen, Marianne Etzelmüller; Vines, Lasse; Galeckas, Augustinas; Frodason, Ymir Kalmann & Svensson, Bengt Gunnar (2018). Correlating charge state transitions of the Si vacancy to the S1/S2 peaks in DLTS spectra of n-type 4H-SiC.
  • Bathen, Marianne Etzelmüller; Vines, Lasse; Galeckas, Augustinas; Frodason, Ymir Kalmann & Svensson, Bengt Gunnar (2018). Charge state transitions of the silicon vacancy in 4H-SiC: Combined DLTS, PL and DFT study.
  • Bathen, Marianne Etzelmüller; Ingebrigtsen, Mads Eide; Olsen, Vegard Skiftestad; Rønning, Vegard & Vines, Lasse (2018). Omvisning for studieprogrammene FA og ELITE .
  • Bathen, Marianne Etzelmüller; Vines, Lasse & Riise, Heine Nygard (2018). Ina tar valget: halvlederfysikk.
  • Monakhov, Edouard; Bathen, Marianne Etzelmüller; Bergum, Kristin; Sky, Thomas Neset & Weiser, Philip Michael (2017). Omvisning for the National Natural Science Foundation of China.
  • Bathen, Marianne Etzelmüller; Borgersen, Jon Arthur; Grini, Sigbjørn; Johansen, Klaus Magnus H; Nyborg, Martin & Olsen, Vegard Skiftestad [Show all 7 contributors for this article] (2017). Omvisning FAM.
  • Bathen, Marianne Etzelmüller; Bergum, Kristin; Ellingsen, Josef Gert Åsheim; Grini, Sigbjørn; Sky, Thomas Neset & Aarseth, Bjørn Brevig (2017). Omvisning for Arendal VGS.
  • Riise, Heine Nygard; Bathen, Marianne Etzelmüller; Borgersen, Jon Arthur; Grini, Sigbjørn & Johansen, Klaus Magnus H (2017). Besøk frå Nanoskolen 2017.
  • Riise, Heine Nygard; Bathen, Marianne Etzelmüller; Grini, Sigbjørn; Olsen, Vegard Skiftestad & Sky, Thomas Neset (2017). Omvisning MENA.
  • Bathen, Marianne Etzelmüller; Ayedh, Hussein Mohammed Hussein; Vines, Lasse; Farkas, Ildiko; Janzen, Erik & Svensson, Bengt Gunnar (2017). Diffusion of the Carbon Vacancy in a-cut and c-cut n-type 4H-SiC.
  • Bathen, Marianne Etzelmüller (2020). Point Defects in silicon carbide for quantum technologies: Identification, tuning and control . det matematisk naturvitenskapelige fakultet.

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Published Aug. 17, 2016 11:26 AM - Last modified Dec. 13, 2019 1:01 PM

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