QuTe 2.0 Quantum emitters in semiconductors for future Technologies; Single-photon emitters

• Bygdås, Martin; Zalandauskas, Vytautas; Frøland, Mariann Carlsen; Farsund, Øystein; Vines, Lasse & Bathen, Marianne Etzelmüller (2026). Intrinsic defects in AlN for single-photon emission and spin manipulation. Full text in Research Archive Show summary

  AlN is a promising host for quantum emitters, with an ultra-wide band gap, piezoelectric properties and widely used in industry. Recent reports indicate the presence of single-photon emitters (SPEs) in AlN [1,2], but the responsible defects are unidentified. This work aims to contribute towards such an identification by modelling intrinsic defects in AlN and their magneto-optical properties using density functional theory (DFT).

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