Lasse Vines

Professor - Semiconductor physics

Norwegian version of this page

Email lasse.vines@fys.uio.no

Phone +47 22840940

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Visiting address MiNa-Lab Gaustadalleen 23c 0373 Oslo

Postal address Postboks 1048 Blindern 0316 Oslo

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Academic Interests

My research interests are within semiconductor physics and materials physics in bulk, thin films and nanostructures. Current topics includes point defects, doping and diffusion in semiconductors. I have a focus on basic research, however, in topics with applications within solar cells, power electronics and quantum technology.

Higher education and employment history

2018 - : Prof. at Departement of Physics/Semiconductor Physics group

2013 - 2018 : Assoc. Prof. at Departement of Physics/Semiconductor Physics group

2008 - 2013 : Post Doc at UiO

2004 - 2008 : PhD at UiO

2001 - 2004 : Scientist at the Norwegian Defence Research Establishment

1996 - 2001 : Bsc/Msc at NTNU (Norwegian University of Science and Technology)

Tags: Point defects, Semiconductors, Diffusion, SIMS, DLTS, SPM, SMN, LENS, Halvlederfysikk

Gogova, D.; Tran, D.Q.; Stanishev, V.; Jokubavicius, V.; Vines, Lasse & Schubert, M. [Show all 9 contributors for this article] (2024). High crystalline quality homoepitaxial Si-doped β-Ga<inf>2</inf>O<inf>3</inf>(010) layers with reduced structural anisotropy grown by hot-wall MOCVD. Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. ISSN 0734-2101. 42(2). doi: 10.1116/6.0003424.
Bathen, Marianne Etzelmüller; Kumar, Piyush; Ghezellou, Misagh; Belanche, Manuel; Vines, Lasse & Ul-Hassan, Jawad [Show all 7 contributors for this article] (2024). Dual configuration of shallow acceptor levels in 4H-SiC. Materials Science in Semiconductor Processing. ISSN 1369-8001. 177. doi: 10.1016/j.mssp.2024.108360. Full text in Research Archive
Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Galeckas, Augustinas; Kumar, Piyush; Kuznetsov, Andrej & Grossner, Ulrike [Show all 7 contributors for this article] (2024). Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime. Materials Science in Semiconductor Processing. ISSN 1369-8001. 176. doi: 10.1016/j.mssp.2024.108316. Full text in Research Archive
Samperi, Orazio; Vines, Lasse; Bertolini, Mario Pietro; Cantiano, Massimiliano; Coffa, Salvo & Fragalà, Maria Elena (2024). Hydrogen depth profiling and multi-energy proton implantation: SIMS as a tool for implant process control. Materials Science in Semiconductor Processing. ISSN 1369-8001. 174. doi: 10.1016/j.mssp.2024.108219.
Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Galeckas, Augustinas; Vines, Lasse & Johansen, Klaus Magnus H (2024). Broad luminescence from Zn acceptors in Zn doped β-Ga<inf>2</inf>O<inf>3</inf>. APL Materials. ISSN 2166-532X. 12(2). doi: 10.1063/5.0190156.
Linnarsson, Margareta; Vines, Lasse & Hallen, Anders (2023). Al Implantation in SiC; Where Will the Ions Come to Rest? Solid State Phenomena. ISSN 1012-0394. 343, p. 57–64. doi: 10.4028/p-nxe4cz. Full text in Research Archive
Serra, Filipe; Gaspar, Guilherme; Viana, Ana; Arumughan, Jayaprasad; Costa, Ivo & Pêra, David [Show all 10 contributors for this article] (2023). Gas immersion laser doping: N++ phosphorus doping on p+ Cz-Si wafers with a highly doped p++ emitter. AIP Conference Proceedings. ISSN 0094-243X. 2826. doi: 10.1063/5.0140455.
Seyidov, Palvan; Varley, Joel B.; Frodason, Ymir Kalmann; Klimm, Detlef; Vines, Lasse & Galazka, Zbigniew [Show all 10 contributors for this article] (2023). Thermal Stability of Schottky Contacts and Rearrangement of Defects in β-Ga2O3 Crystals. Advanced Electronic Materials. ISSN 2199-160X. doi: 10.1002/aelm.202300428. Full text in Research Archive
Azarov, Alexander; García Fernández, Javier; Zhao, Junlei; Djurabekova, Flyura; He, Huan & He, Ru [Show all 13 contributors for this article] (2023). Universal radiation tolerant semiconductor. Nature Communications. ISSN 2041-1723. 14, p. 1–8. doi: 10.1038/s41467-023-40588-0. Full text in Research Archive
Langørgen, Amanda; Frodason, Ymir Kalmann; Karsthof, Robert Michael; Von Wenckstern, Holger; Jensen, Ingvild Julie Thue & Vines, Lasse [Show all 7 contributors for this article] (2023). Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy. Journal of Applied Physics. ISSN 0021-8979. 134(1), p. 015701-1–015701-6. doi: 10.1063/5.0150994. Full text in Research Archive Show summary
Defects in pulsed-laser deposition grown have been investigated using thermal admittance spectroscopy and secondary ion mass spectrometry (SIMS). A film was grown on either a tin-doped indium oxide or an aluminum-doped zinc oxide buffer layer on a sapphire substrate functioning as back contact layer in vertical diode structures. In both sample types, a distinct signature in the capacitance signal was observed in the temperature range of 150–260 K. The corresponding defect charge-state transition level, labeled ⁠, was found to exhibit an activation energy of 0.21 eV. Potential candidates for the level were investigated using a combination of SIMS and hybrid-functional calculations. SIMS revealed the main impurities in the sample to be tin, silicon, and iron. The hybrid-functional calculations predict the acceptor levels of substitutional iron to lie 0.7–1.2 eV below the conduction band minimum depending on Ga-site, making an unlikely candidate for the level. Furthermore, Si as well as Sn substituting on the sixfold coordinated Ga2 site and the fivefold coordinated Ga3 and Ga4 sites are all shallow donors in -⁠, similar to that of -⁠. Sn substituting on the fourfold Ga1 site is, however, predicted to have levels in the bandgap at 0.15 and 0.24 eV below the conduction band minimum, in accordance with the extracted activation energy for ⁠. Thus, we tentatively assign as the origin of the level.
Saxegaard, Kjetil Karlsen; Monakhov, Eduard; Vines, Lasse & Bergum, Kristin (2023). Characteristics of ZnON films and heterojunction diodes with varying O:N ratios. Thin Solid Films. ISSN 0040-6090. 782. doi: 10.1016/j.tsf.2023.139968. Full text in Research Archive
Bathen, Marianne Etzelmüller; Selnesaunet, Gard Momrak; Enga, Marius; Kjeldby, Snorre Braathen; Müting, Johanna & Vines, Lasse [Show all 7 contributors for this article] (2023). Charge State Control Over Point Defects in SiC Devices. Defect and Diffusion Forum. ISSN 1012-0386. 425, p. 35–42. doi: 10.4028/p-6ho92o. Full text in Research Archive
Wang, Xingyi; Zimmermann, Christian; Titze, Michael; Niaouris, Vasileios; Hansen, Ethan R. & D'Ambrosia, Samuel H. [Show all 9 contributors for this article] (2023). Properties of Donor Qubits in ZnO Formed by Indium-Ion Implantation. Physical Review Applied. ISSN 2331-7019. 19(5), p. 054090-1–054090-12. doi: 10.1103/PhysRevApplied.19.054090. Full text in Research Archive Show summary
Neutral shallow donors (D0) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here we report on the formation of D0 in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with those of in situ–doped donors. The inhomogeneous linewidth of the donor-bound-exciton transition is less than 10 GHz, comparable to the optical linewidth of in situ In. Longitudinal spin relaxation times (T1) exceed reported values for in situ Ga donors, indicating that residual In-implantation damage does not degrade T1. Two-laser Raman spectroscopy of the donor spin reveals the hyperfine interaction of the donor electron with the spin-9/2 In nuclei. This work is an important step toward the deterministic formation of In-donor qubits in ZnO with optical access to a long-lived nuclear-spin memory.
Frodason, Ymir Kalmann; Krzyzaniak, Patryk Piotr; Vines, Lasse; Varley, Joel Basile; Van De Walle, Chris G. & Johansen, Klaus Magnus H (2023). Diffusion of Sn donors in β-Ga2O3. APL Materials. ISSN 2166-532X. 11(4), p. 041121-1–041121-8. doi: 10.1063/5.0142671. Full text in Research Archive
Bugten, Andreas Voll; Michels Brito Miranda, Leander Edward; Brurok, Rune Botnmark; Hartung, Cathrine; Ott, Emmanuelle & Vines, Lasse [Show all 9 contributors for this article] (2023). The Role of Boron in Low Copper Spheroidal Graphite Irons. Metallurgical and Materials Transactions A. ISSN 1073-5623. 54, p. 2539–2553. doi: 10.1007/s11661-023-07014-y. Full text in Research Archive
Polyakov, A.Y.; Kochkova, A.I.; Langørgen, Amanda; Vines, Lasse; Vasilev, A. & Shchemerov, I.V. [Show all 8 contributors for this article] (2023). On the possible nature of deep centers in Ga2O3. Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. ISSN 0734-2101. 41(2), p. 023401-1–023401-6. doi: 10.1116/6.0002307. Full text in Research Archive Show summary
The electric field dependence of emission rate of the deep traps with level near Ec−0.6 eV, so-called E1 traps, was studied by means of deep level transient spectroscopy measurements over a wide range of applied voltages. The traps were initially introduced by 900 °C ampoule annealing in molecular hydrogen. The results indicate the activation energy of the centers and the ratio of high-field to low-field electron emission rates at a fixed temperature scale as the square root of electric field, suggesting that the centers behave as deep donors. The possible microscopic nature of the centers in view of recent theoretical calculations is discussed. The most likely candidates for the E1 centers are SiGa1–H or SnGa2–H complexes.
Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2023). Trap-limited diffusion of Zn in β-Ga2 O3. PHYSICAL REVIEW MATERIALS. ISSN 2475-9953. 7(3), p. 1–8. doi: 10.1103/PhysRevMaterials.7.035401. Full text in Research Archive
Kjeldby, Snorre Braathen; Nguyen, Phuong Dan; García Fernández, Javier; Haug, Kristian; Galeckas, Augustinas & Jensen, Ingvild Julie Thue [Show all 9 contributors for this article] (2023). Optical properties of ZnFe2O4 nanoparticles and Fe-decorated inversion domain boundaries in ZnO. Nanoscale Advances. 5(7), p. 2102–2110. doi: 10.1039/d2na00849a. Full text in Research Archive Show summary
The maximum efficiency of solar cells utilizing a single layer for photovoltaic conversion is given by the single junction Shockley–Queisser limit. In tandem solar cells, a stack of materials with different band gaps contribute to the conversion, enabling tandem cells to exceed the single junction Shockley–Queisser limit. An intriguing variant of this approach is to embed semiconducting nanoparticles in a transparent conducting oxide (TCO) solar cell front contact. This alternative route would enhance the functionality of the TCO layer, allowing it to participate directly in photovoltaic conversion via photon absorption and charge carrier generation in the nanoparticles. Here, we demonstrate the functionalization of ZnO through incorporation of either ZnFe2O4 spinel nanoparticles (NPs) or inversion domain boundaries (IDBs) decorated by Fe. Diffuse reflectance spectroscopy and electron energy loss spectroscopy show that samples containing spinel particles and samples containing IDBs decorated by Fe both display enhanced absorption in the visible range at around 2.0 and 2.6 eV. This striking functional similarity was attributed to the local structural similarity around Fe-ions in spinel ZnFe2O4 and at Fe-decorated basal IDBs. Hence, functional properties of the ZnFe2O4 arise already for the two-dimensional basal IDBs, from which these planar defects behave like two-dimensional spinel-like inclusions in ZnO. Cathodoluminescence spectra reveal an increased luminescence around the band edge of spinel ZnFe2O4 when measuring on the spinel ZnFe2O4 NPs embedded in ZnO, whereas spectra from Fe-decorated IDBs could be deconvoluted into luminescence contributions from bulk ZnO and bulk ZnFe2O4.
Ghezellou, Misagh; Kumar, Piyush; Bathen, Marianne E.; Karsthof, Robert Michael; Sveinbjörnsson, Einar Ö. & Grossner, Ulrike [Show all 9 contributors for this article] (2023). The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers. APL Materials. ISSN 2166-532X. 11(3). doi: 10.1063/5.0142415. Full text in Research Archive
Frodason, Ymir Kalmann; Varley, Joel B.; Johansen, Klaus Magnus H; Vines, Lasse & Van De Walle, Chris G. (2023). Migration of Ga vacancies and interstitials in β-Ga2 O3. Physical review B (PRB). ISSN 2469-9950. 107(2), p. 024109-1–024109-9. doi: 10.1103/PhysRevB.107.024109. Full text in Research Archive
Borgersen, Jon; Karsthof, Robert Michael; Rønning, Vegard; Vines, Lasse; Von Wenckstern, Holger & Grundmann, Marius [Show all 8 contributors for this article] (2023). Origin of enhanced conductivity in low dose ion irradiated oxides. AIP Advances. ISSN 2158-3226. 13(1), p. 015211-1–015211-5. doi: 10.1063/5.0134699. Full text in Research Archive
Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Grossner, Ulrike & Vines, Lasse (2022). Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC. Materials Science Forum. ISSN 0255-5476. 1062, p. 371–375. doi: 10.4028/p-ryui6b. Full text in Research Archive
Olsen, Vegard Skiftestad; Frodason, Ymir Kalmann; Hommedal, Ylva Knausgård; Nielsen, Dina Marie; Weiser, Philip Michael & Johansen, Klaus Magnus H [Show all 9 contributors for this article] (2022). Li and group-III impurity doping in ZnSnN2: Potential and limitations. PHYSICAL REVIEW MATERIALS. ISSN 2475-9953. 6(12), p. 1–8. doi: 10.1103/PhysRevMaterials.6.124602. Full text in Research Archive
Galeckas, Augustinas; Karsthof, Robert Michael; Kingsly, Gana; Kok, Angela; Bathen, Marianne Etzelmüller & Vines, Lasse [Show all 7 contributors for this article] (2022). Cross-Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations. Physica Status Solidi (a) applications and materials science. ISSN 1862-6300. p. 1–7. doi: 10.1002/pssa.202200449. Full text in Research Archive
Garcia Fernandez, Javier; Kjeldby, Snorre Braathen; Nguyen, Phuong Dan; Karlsen, Ole Bjørn; Vines, Lasse & Prytz, Øystein (2022). Formation of γ-Ga2O3 by ion implantation: Polymorphic phase transformation of β-Ga2O3. Applied Physics Letters. ISSN 0003-6951. 121(19). doi: 10.1063/5.0120103. Full text in Research Archive
Hebnes, Oliver Lerstøl; Bathen, Marianne Etzelmüller; Schøyen, Øyvind Sigmundson; Winther-Larsen, Sebastian Gregorius; Vines, Lasse & Hjorth-Jensen, Morten (2022). Predicting solid state material platforms for quantum technologies. npj Computational Materials. ISSN 2057-3960. 8(1). doi: 10.1038/s41524-022-00888-3. Full text in Research Archive
Assar, Alireza; Martinho, Filipe; Larsen, Jes; Saini, Nishant; Shearer, Denver & Moro, Marcos V. [Show all 15 contributors for this article] (2022). Gettering in polySi/SiO xpassivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience. ACS Applied Materials & Interfaces. ISSN 1944-8244. 14(12), p. 14342–14358. doi: 10.1021/acsami.2c00319. Full text in Research Archive
Kjeldby, Snorre Braathen; Azarov, Alexander; Nguyen, Phuong Dan; Venkatachalapathy, Vishnukanthan; Mikšová, R. & MacKová, A. [Show all 9 contributors for this article] (2022). Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide. Journal of Applied Physics. ISSN 0021-8979. 131(12). doi: 10.1063/5.0083858. Full text in Research Archive
Langørgen, Amanda; Zimmermann, Christian; Frodason, Ymir Kalmann; Verhoeven, Espen Førdestrøm; Weiser, Philip Michael & Karsthof, Robert Michael [Show all 8 contributors for this article] (2022). Influence of heat treatments in H2 and Ar on the E1 center in β-Ga2O3. Journal of Applied Physics. ISSN 0021-8979. 131(115702). doi: 10.1063/5.0083861. Full text in Research Archive
Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Kuznetsov, Andrej & Vines, Lasse (2022). Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 131. doi: 10.1063/5.0077308. Full text in Research Archive
Müting, Johanna; Bobal, Viktor; Vines, Lasse & Grossner, Ulrike (2021). Phosphorus implantation into 4H-SiC at room and elevated temperature. Semiconductor Science and Technology. ISSN 0268-1242. 36(6). doi: 10.1088/1361-6641/abf55a.
Alfieri, Giovanni; Mihaila, Andrei; Godignon, P.; Varley, Joel Basile & Vines, Lasse (2021). Deep level study of chlorine-based dry etched beta - Ga2O3. Journal of Applied Physics. ISSN 0021-8979. 130(2). doi: 10.1063/5.0050416.
Duan, Juanmei; Wang, Changan; Vines, Lasse; Rebohle, Lars; Helm, Manfred & Zeng, Yu-Jia [Show all 8 contributors for this article] (2021). Increased dephasing length in heavily doped GaAs. New Journal of Physics. ISSN 1367-2630. 23(8). doi: 10.1088/1367-2630/ac1a98.
Linnarsson, Margareta; Vines, Lasse & Hallen, Anders (2021). Influence from the electronic shell structure on the range distribution during channeling of 40-300 keV ions in 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 130(7). doi: 10.1063/5.0054188.
Borgersen, Jon; Johansen, Klaus Magnus H; Vines, Lasse; Wenckstern, Holger von; Grundmann, Marius & Kuznetsov, Andrej (2021). Fermi level controlled point defect balance in ion irradiated indium oxide. Journal of Applied Physics. ISSN 0021-8979. 130(8). doi: 10.1063/5.0062135. Full text in Research Archive
Bonkerud, Julie; Zimmermann, Christian; Weiser, Philip Michael; Vines, Lasse & Monakhov, Eduard (2021). On the permittivity of titanium dioxide. Scientific Reports. ISSN 2045-2322. 11. doi: 10.1038/s41598-021-92021-5. Full text in Research Archive
Lavrov, E.V.; Chaplygin, I.; Herklotz, F.; Melnikov, V.V.; Kutin, Y. & Vines, Lasse (2021). Dominant hydrogen complex in natural anatase TiO2. Journal of Applied Physics. ISSN 0021-8979. 130(14). doi: 10.1063/5.0067495. Full text in Research Archive
Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Vines, Lasse; Monakhov, Eduard; Lee, In-Hwan & Kuznetsov, Andrej (2021). Activation energy of silicon diffusion in gallium oxide: Roles of the mediating defects charge states and phase modification. Applied Physics Letters. ISSN 0003-6951. 119(18). doi: 10.1063/5.0070045. Full text in Research Archive

View all works in Cristin

Bathen, Marianne Etzelmüller; Olsen, Vegard Skiftestad & Vines, Lasse (2024). Hvor går veien? Kvanteteknologiens potensiale i fremtidens teknologi. .
Bathen, Marianne Etzelmüller; Hebnes, Oliver Lerstøl; Schøyen, Øyvind; Winther-Larsen, Sebastian G.; Vines, Lasse & Hjorth-Jensen, Morten (2024). Predicting solid state material platforms for quantum technologies .
Bathen, Marianne Etzelmüller & Vines, Lasse (2024). Semiconductors as quantum materials - Ongoing research at the LENS group.
Ousdal, Erlend Lemva; Bathen, Marianne Etzelmüller & Vines, Lasse (2023). Controlling directionality of emission from quantum defects through microstructures in Silicon Carbide .
Ousdal, Erlend Lemva; Bathen, Marianne Etzelmüller & Vines, Lasse (2023). Optical and electrical characterization of potential single photon emitters in 6H silicon carbide .
Bathen, Marianne Etzelmüller & Vines, Lasse (2023). Point defects in semiconductors for quantum technologies Ongoing research at the University of Oslo.
Bathen, Marianne Etzelmüller & Vines, Lasse (2023). Studieretning i kvanteteknologi.
Bathen, Marianne Etzelmüller; Kumar, Piyush; Ghezellou, Misagh; Belanche, Manuel; Vines, Lasse & Ul-Hassan, Jawad [Show all 7 contributors for this article] (2023). Dual configuration of shallow acceptor levels in 4H-SiC.
Bathen, Marianne Etzelmüller; Razinkovas, Lukas; Linderälv, Christopher; Vines, Lasse & Grossner, Ulrike (2023). Quantum pressure sensing using the vibronic spectrum of color centers .
Bathen, Marianne Etzelmüller; Johnson, Brett C.; Galeckas, Augustinas; martins, maria m; Kumar, Piyush & Silkinis, Rokas [Show all 11 contributors for this article] (2023). Doping-induced color centers in silicon carbide .
Langørgen, Amanda; Frodason, Ymir Kalmann; Julie Thue Jensen, Ingvild & Vines, Lasse (2023). A metastable deep defect in beta-Ga2O3.
Kjeldby, Snorre Braathen; García Fernández, Javier; Nguyen, Phuong Dan; Prytz, Øystein & Vines, Lasse (2023). Implantation for polymorphic transformation in Ga2O3: thermal evolution and luminescence. Show summary
Dette foredraget presenterer ioneimplantasjonindusert fasetransformasjon i galliumoksid, Ga2O3, fra beta-fasen til gamma-fasen. Den siste tiden har det vært utbredt vitenskaplig interesse i denne transformasjonen, som, basert på tilgjengelige data, ser ut til å være uavhengig av det implanterte speciet. Utover å presentere forsøk som fastslår den termiske stabiliteten til gamma-fasen, opp til 500 eller 700 grader Celsius avhengig av implantasjonsparametre, presenterer vi her også de første luminesensmålingene på slike prøver med høy romlig oppløsning, hovedsaklig fra prøver implantert med germanium, med støttende resultater fra nikkelimplanterte prøver. Både intrinsisk luminesens, fra selvlokaliserte hull og intrinsiske defekter, og ekstrinsisk luminesens fra krom ble studert. Foredraget bidrar til å klargjøre ikke bare strukturen men også egenskapene til fasetransformerte lag i galliumoksid fra ioneimplantasjon.
Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2023). Ge donor diffusion in β-Ga2O3.
Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2023). Impurity diffusion in β-Ga2O3.
Saxegaard, Kjetil Karlsen; Bergum, Kristin; Vines, Lasse & Monakhov, Eduard (2023). The effect of annealing on opto-electronic properties of ZnON films.
Garcia Fernandez, Javier; Kjeldby, Snorre Braathen; Nguyen, Phuong Dan; Haug, Kristian; Galeckas, Augustinas & Jensen, Ingvild Julie Thue [Show all 9 contributors for this article] (2023). Optical properties and structure relationship in ZnO:Fe with inversion domain boundaries and ZnFe2O4/ZnO heterostructures.
Garcia Fernandez, Javier; Kjeldby, Snorre Braathen; Azarov, Alexander; Pokle, Anuj; Nguyen, Phuong Dan & Vines, Lasse [Show all 8 contributors for this article] (2023). Polymorph engineering and radiation tolerance in β-Ga2O3.
Monakhov, Eduard; Bergum, Kristin; Vines, Lasse & Saxegaard, Kjetil Karlsen (2023). The UiO semiconductor group: Towards tandems with ZnON.
Saxegaard, Kjetil Karlsen; Monakhov, Eduard; Vines, Lasse & Bergum, Kristin (2023). The effect of annealing on ZnON intended for solar cell applications.
Bathen, Marianne Etzelmüller; Enga, Marius Johan; Selnesaunet, Gard Momrak; Kjeldby, Snorre Braathen; Galeckas, Augustinas & Müting, Johanna [Show all 8 contributors for this article] (2022). Charge state control over point defects in SiC devices.
Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Kumar, Piyush; Galeckas, Augustinas; Kuznetsov, Andrej & Vines, Lasse [Show all 7 contributors for this article] (2022). Impact of C-injection in 4H-SiC on defect distribution and minority carrier lifetime.
Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Kumar, Piyush; Galeckas, Augustinas; Kuznetsov, Andrej Yu. & Vines, Lasse [Show all 7 contributors for this article] (2022). Impact of C-injection in SiC on defect distribution and minority carrier lifetime.
Bathen, Marianne Etzelmüller; Hebnes, Oliver Lerstøl; Schøyen, Øyvind Sigmundson; Winther-Larsen, Sebastian Gregorius; Vines, Lasse & Hjorth-Jensen, Morten (2022). Predicting Solid State Material Platforms for Quantum Technologies.
Bergum, Kristin; Monakhov, Eduard & Vines, Lasse (2022). The effect of oxygen and nitrogen concentrations on Opto-electronic properties of ZnOxNy films .
Langørgen, Amanda; Frodason, Ymir Kalmann; Karsthof, Robert Michael; Wenckstern, Holger von; Thue Jensen, Ingvild & Vines, Lasse (2022). An electron trap in κ-Ga2O3 and the quest for its microscopic origin.
Bergum, Kristin; Monakhov, Eduard & Vines, Lasse (2022). The effect of oxygen and nitrogen concentrations on ZnON films.
Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2022). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
Karlsen, Kjetil; Bergum, Kristin; Monakhov, Eduard & Vines, Lasse (2022). The effect of oxygen and nitrogen concentrations on Opto-electronic properties of ZnOxNy films.
Karlsen, Kjetil; Bergum, Kristin; Monakhov, Eduard & Vines, Lasse (2022). The effect of oxygen and nitrogen concentrations on Opto-electronic properties of ZnON films.
Karlsen, Kjetil; Bergum, Kristin; Monakhov, Eduard & Vines, Lasse (2022). The effect of oxygen and nitrogen concentrations on Opto-electronic properties of ZnON films.
Karlsen, Kjetil; Bergum, Kristin; Monakhov, Eduard & Vines, Lasse (2022). Electronic properties and dominant levels in ZnON.
Bergum, Kristin; Monakhov, Eduard & Vines, Lasse (2022). The effect of oxygen and nitrogen concentrations on Opto-electronic properties of ZnON films.
Saxegaard, Kjetil Karlsen; Bergum, Kristin; Monakhov, Eduard & Vines, Lasse (2022). The effect of oxygen and nitrogen concentrations on Opto-electronic properties of ZnON films.
Vines, Lasse; Monakhov, Eduard & Kuznetsov, Andrej (2022). Defects in semiconductors. Journal of Applied Physics. ISSN 0021-8979. 132(15). doi: 10.1063/5.0127714. Full text in Research Archive
Galeckas, Augustinas; Karsthof, Robert Michael; Gana, Kingsly; Kok, Angela; Bathen, Marianne Etzelmüller & Vines, Lasse [Show all 7 contributors for this article] (2022). Cross-sectional carrier lifetime profiling and deep level monitoring in silicon carbide films exhibiting variable carbon vacancy concentrations. Show summary
We report on the carrier lifetime control over 150 μmthick 4H-SiC epitaxial layers via thermal generation and annihilation of carbon vacancy (VC) related Z1/2lifetime killer sites. The defect developments upon typical SiC processing steps, such as high- and moderate-temperature anneals in the presence of a carbon cap,are monitored by combining electrical characterization techniques capable of VC depth-profiling, capacitance-voltage (CV) and deep-level transient spectroscopy (DLTS), with a novel all-optical approach of cross-sectional carrier lifetime profiling across 4H-SiC epilayer/substrate based on imaging time-resolved photoluminescence (TRPL) spectroscopy in orthogonal pump-probe geometry,which readily exposes in-depth efficacy ofdefect reduction and surface recombination effects.The lifetime control is realized byinitialhigh-temperature treatment (1800ºC) to increase VC concentration to ~1013 cm-3 level followed by a moderate-temperature (1500ºC) post-annealing of variable duration under C-rich thermodynamic equilibrium conditions. The post-annealing carried out for 5 hours in effect eliminates VCthroughout the entire ultra-thick epilayer. The reduction of VC-related Z1/2 sites is proven by a significant lifetime increase from 0.8 μs to 2.5 μs. We discuss the upper limit of lifetimes in terms of carrier surface leakage and presence of other non-radiative recombination centers besides Z1/2, possibly related to residual impurities such as boron.
Kjeldby, Snorre Braathen; Azarov, Alexander; Nguyen, Phuong Dan; Garcia Fernandez, Javier; Venkatachalapathy, Vishnukanthan & Mikšová, Romana [Show all 10 contributors for this article] (2022). Structure and luminescence properties of Si-implanted β-Ga2O3.
Kjeldby, Snorre Braathen; Azarov, Alexander; Nguyen, Phuong Dan; Venkatachalapathy, Vishnukanthan; Mikšová, Romana & Macková, Anna [Show all 10 contributors for this article] (2022). Structural Transformation of β-Ga2O3 through Si-implantation.
Kjeldby, Snorre Braathen; Nguyen, Phuong Dan; Garcia Fernandez, Javier; Haug, Kristian; Galeckas, Augustinas & Jensen, Ingvild Julie Thue [Show all 9 contributors for this article] (2022). Optical properties of Fe-decorated inversion domain boundaries and embedded spinel zinc ferrite nanoparticles in zinc oxide.
Garcia Fernandez, Javier; Kjeldby, Snorre Braathen; Nguyen, Phuong Dan; Haug, Kristian; Galeckas, Augustinas & Jensen, Ingvild Julie Thue [Show all 9 contributors for this article] (2022). Structural and optical investigation of Fe-ZnO nanoarchitectures: from inversion domain boundaries to ZnO/ZnFe2O4 heterostructure.
Frodason, Ymir Kalmann; Krzyzaniak, Patryk Piotr; Vines, Lasse; Varley, Joel Basile; Van de Walle, Chris G. & Johansen, Klaus Magnus H (2022). Ga vacancy-mediated diffusion of Sn donors in β-Ga2O3.
Frodason, Ymir Kalmann; Varley, Joel Basile; Johansen, Klaus Magnus H; Vines, Lasse & Van de Walle, Chris G. (2022). Strongly anisotropic migration of the Ga vacancy in ß-Ga2O3.
Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2022). Dynamic interaction of Zn and intrinsic defects in beta-Ga2O3.
Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2022). Diffusion of Zn in beta-Ga2O3.
Norby, Truls; Karsthof, Robert Michael; Saeed, Sarmad Waheed; Kuznetsov, Andrej & Vines, Lasse (2022). The p-n junction has nothing to do with ionics. Does it? .
Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2022). Zn diffusion in 𝛽-Ga2O3 using SIMS.
Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Linnarsson, Margareta; Galeckas, Augustinas; Kuznetsov, Andrej & Grossner, Ulrike [Show all 7 contributors for this article] (2021). Stability, evolution and diffusion of intrinsic point defects in 4H-SiC.
Karlsen, Kjetil; Monakhov, Eduard; Vines, Lasse & Bergum, Kristin (2021). Electronic properties and the dominant levels in ZnON.
Bergum, Kristin; Vines, Lasse & Monakhov, Eduard (2021). Electronic properties and the dominant levels in ZnON.
Lavrov, E.V.; Chaplygin, I.; Herklotz, Frank; Melnikov, V.V.; Kutin, Y. & Vines, Lasse (2021). Publisher's note: Dominant hydrogen complex in natural anatase TiO2 (J. Appl. Phys. (2021) 130 (145701) DOI: 10.1063/5.0067495). Journal of Applied Physics. ISSN 0021-8979. 130(21). doi: 10.1063/5.0078788.
Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2021). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Enga, Marius & Vines, Lasse (2021). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
Olsen, Vegard Skiftestad; Øversjøen, Vetle; Frodason, Ymir Kalmann; Cooil, Simon; Lee, In-Hwan & Vines, Lasse [Show all 7 contributors for this article] (2021). Electrical control in ZnSnN2 by tailoring intrinsic and extrinsic defects.
Karlsen, Kjetil; Monakhov, Eduard; Bergum, Kristin; Vines, Lasse & Thue Jensen, Ingvild (2021). Electronic properties and dominant levels in ZnON.
Skaar, Lars Kristian Gretland; Vines, Lasse & Rivas Gongora, David (2023). Formation of W-, C- and G-centers in silicon; towards single photon emitters. Kjemisk Institutt.
Pedersen, Benedicte Allum; Vines, Lasse; Kjeldby, Snorre Braathen & Reinertsen, Vilde Mari (2022). Positioning and control of single-photon emitters in SiC-based nanostructures for quantum applications. Universitetet i Oslo.
Vigneswaran, Nirun; Vines, Lasse & Olsen, Vegard Skiftestad (2022). Deponering og karakterisering av polykrystallinsk SnO for solcelle applikasjoner. Universitetet i Oslo.
Enga, Marius Johan; Vines, Lasse & Bathen, Marianne Etzelmüller (2021). Exploring Defects in Silicon Carbide for Quantum Technologies; A Density Functional Theory Study. Universitetet i Oslo.
Krzyzaniak, Patryk Piotr & Vines, Lasse (2021). Development of β-Ga2O3 as a novel material for power electronics, dopant diffusion and defect interaction. Universitetet i Oslo.
Selnesaunet, Gard Momrak; Vines, Lasse & Bathen, Marianne Etzelmüller (2021). Nanostructuring of SiC for novel defect-based quantum technologies. Universitetet i Oslo. Show summary
Point defects in semiconductors have emerged as viable candidates for quantumbased technologies such as quantum computing, communication, and sensing. The present work is related to quantum compatible point defects in silicon carbide (SiC), particularly the silicon vacancy, a point defect and material system that has received considerable research interest in the last few years. In this thesis, a fabrication process was developed for producing structures in SiC that can be used as, e.g., waveguides for single-photon emission. This was performed by depositing a SiO2 layer with plasma chemical vapor deposition (PECVD) on a high purity 4H-SiC wafer. Next, with photolithography, the SiO2 layer was patterned with a photoresist mask in a reactive ion etching (RIE) step. The patterned SiO2 layer was then used as a hard mask for a subsequent RIE step, finalizing the photonic device. A thin nickel layer was deposited on the structures with physical vapor deposition (PVD) for the charge-state control through a liftoff process with a photoresist mask. Defect creation was achieved by 21 keV He implantation to a fluence of 1×1011 cm−2 with an ion implanter. In a scanning electron microscope (SEM), the device morphology showed sharply defined features with almost vertical sidewalls. The diffraction limit from the photolithography resulted in increasingly tilted sidewalls as the structures decreased in size. The optical properties were characterized with cathodoluminescence (CL) spectroscopy and exhibited emission in the V1 and V1’ zero-phonon lines (ZPLs) associated with the VSi. Charge-state control of the VSi was identified by enhancing the V− Si CL emission intensity in the depletion region of the Schottky contact, with a reduction in intensity towards the depletion region edge. By utilizing angle-resolved cathodoluminescence (ARCL) spectroscopy, the radiation profiles of the photonic structures were shown to be altered compared to the Lambertian radiation profile of the implanted wafer. Though no electromagnetic wave propagation in discrete modes (waveguiding effect) was observed, the photonic devices enhanced the emission intensity of the VSi in all directions by functioning as a lens with a higher numerical aperture than the wafer, and the lens had characteristics similar to a combination of a solid immersion lens (SIL) and an optical fiber. The findings presented herein are important for further photonic device fabrication in 4H-SiC, and lay the groundwork for incorporating quantum compatible point defects in electrically driven quantum technology devices.
Isaksen, Ranvei Dahl & Vines, Lasse (2021). IR- og dataanalyse for feildeteksjon og diagnostisering av solcellemoduler. Universitetet i Oslo.
Øversjøen, Vetle; Vines, Lasse & Olsen, Vegard Skiftestad (2021). Development of Earth Abundant ZnSnN2 for Solar Cell Applications. Universitetet i Oslo.
Krzyzaniak, Patryk Piotr; Vines, Lasse & Johansen, Klaus Magnus H (2021). Development of b-Ga2O3 as a novel material for power electronics, dopant diffusion and defect interaction. 7Letras.

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Published Nov. 4, 2010 12:42 PM - Last modified Sep. 15, 2023 2:48 PM

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