Lasse Vines

Professor - Semiconductor physics
Image of Lasse Vines
Norwegian version of this page
Phone +47 22840940
Username
Visiting address MiNa-Lab Gaustadalleen 23c 0373 Oslo
Postal address Postboks 1048 Blindern 0316 Oslo

Academic Interests

My research interests are within semiconductor physics and materials physics in bulk, thin films and nanostructures. Current topics includes point defects, doping and diffusion in semiconductors. I have a focus on basic research, however, in topics with applications within solar cells, power electronics and quantum technology.

 

Higher education and employment history

2018  -             : Prof. at Departement of Physics/Semiconductor Physics group

2013  -  2018   : Assoc. Prof. at Departement of Physics/Semiconductor Physics group

2008  -  2013   : Post Doc at UiO

2004  - 2008    : PhD at UiO

2001  - 2004    : Scientist at the Norwegian Defence Research Establishment

1996  - 2001    : Bsc/Msc at NTNU (Norwegian University of Science and Technology)

 

Tags: Point defects, Semiconductors, Diffusion, SIMS, DLTS, SPM, SMN

Publications

  • Assar, Alireza; Martinho, Filipe; Larsen, Jes; Saini, Nishant; Shearer, Denver & Moro, Marcos V. [Show all 15 contributors for this article] (2022). Gettering in polySi/SiO xpassivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience. ACS Applied Materials & Interfaces. ISSN 1944-8244. 14(12), p. 14342–14358. doi: 10.1021/acsami.2c00319.
  • Kjeldby, S.B.; Azarov, Alexander; Nguyen, Phuong Dan; Venkatachalapathy, Vishnukanthan; Mikšová, R. & MacKová, A. [Show all 9 contributors for this article] (2022). Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide. Journal of Applied Physics. ISSN 0021-8979. 131(12). doi: 10.1063/5.0083858.
  • Langørgen, Amanda; Zimmermann, Christian; Frodason, Ymir Kalmann; Førdestrøm Verhoeven, Espen; Weiser, Philip Michael & Karsthof, Robert Michael [Show all 8 contributors for this article] (2022). Influence of heat treatments in H 2 and Ar on the E <inf>1</inf>center in β -Ga<inf>2</inf>O<inf>3</inf>. Journal of Applied Physics. ISSN 0021-8979. 131(11). doi: 10.1063/5.0083861.
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Kuznetsov, Andrej & Vines, Lasse (2022). Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 131. doi: 10.1063/5.0077308. Full text in Research Archive
  • Müting, Johanna; Bobal, Viktor; Vines, Lasse & Grossner, Ulrike (2021). Phosphorus implantation into 4H-SiC at room and elevated temperature. Semiconductor Science and Technology. ISSN 0268-1242. 36(6). doi: 10.1088/1361-6641/abf55a.
  • Alfieri, Giovanni; Mihaila, Andrei; Godignon, P.; Varley, Joel Basile & Vines, Lasse (2021). Deep level study of chlorine-based dry etched beta - Ga2O3. Journal of Applied Physics. ISSN 0021-8979. 130(2). doi: 10.1063/5.0050416.
  • Duan, Juanmei; Wang, Changan; Vines, Lasse; Rebohle, Lars; Helm, Manfred & Zeng, Yu-Jia [Show all 8 contributors for this article] (2021). Increased dephasing length in heavily doped GaAs. New Journal of Physics. ISSN 1367-2630. 23(8). doi: 10.1088/1367-2630/ac1a98.
  • Linnarsson, Margareta; Vines, Lasse & Hallen, Anders (2021). Influence from the electronic shell structure on the range distribution during channeling of 40-300 keV ions in 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 130(7). doi: 10.1063/5.0054188.
  • Borgersen, Jon; Johansen, Klaus Magnus H; Vines, Lasse; Wenckstern, Holger von; Grundmann, Marius & Kuznetsov, Andrej (2021). Fermi level controlled point defect balance in ion irradiated indium oxide. Journal of Applied Physics. ISSN 0021-8979. 130(8). doi: 10.1063/5.0062135. Full text in Research Archive
  • Bonkerud, Julie; Zimmermann, Christian; Weiser, Philip Michael; Vines, Lasse & Monakhov, Eduard (2021). On the permittivity of titanium dioxide. Scientific Reports. ISSN 2045-2322. 11. doi: 10.1038/s41598-021-92021-5. Full text in Research Archive
  • Lavrov, E.V.; Chaplygin, I.; Herklotz, F.; Melnikov, V.V.; Kutin, Y. & Vines, Lasse (2021). Dominant hydrogen complex in natural anatase TiO2. Journal of Applied Physics. ISSN 0021-8979. 130(14). doi: 10.1063/5.0067495. Full text in Research Archive
  • Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Vines, Lasse; Monakhov, Eduard; Lee, In-Hwan & Kuznetsov, Andrej (2021). Activation energy of silicon diffusion in gallium oxide: Roles of the mediating defects charge states and phase modification. Applied Physics Letters. ISSN 0003-6951. 119(18). doi: 10.1063/5.0070045. Full text in Research Archive
  • Aarseth, Bjørn Lupton; Granerød, Cecilie Skjold; Galeckas, Augustinas; Azarov, Alexander; Nguyen, Phuong Dan & Prytz, Øystein [Show all 7 contributors for this article] (2021). Formation and functionalization of Ge-nanoparticles in ZnO. Nanotechnology. ISSN 0957-4484. 32(50). doi: 10.1088/1361-6528/ac264a. Full text in Research Archive
  • Bathen, Marianne Etzelmüller & Vines, Lasse (2021). Manipulating Single-Photon Emission from Point Defects in Diamond and Silicon Carbide. Advanced Quantum Technologies. 4. doi: 10.1002/qute.202100003. Full text in Research Archive
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Karsthof, Robert Michael; Delteil, Aymeric; Sallet, Vincent & Kuznetsov, Andrej [Show all 7 contributors for this article] (2021). Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide. Physical review B (PRB). ISSN 2469-9950. 104. doi: 10.1103/PhysRevB.104.045120. Full text in Research Archive
  • Olsen, Vegard Skiftestad; Øversjøen, Vetle; Gogova-Petrova, Daniela; Pecz, Bela; Galeckas, Augustinas & Borgersen, Jon Arthur [Show all 9 contributors for this article] (2021). ZnSnN2 in Real Space and k-Space: Lattice Constants, Dislocation Density, and Optical Band Gap. Advanced Optical Materials. ISSN 2195-1071. doi: 10.1002/adom.202100015.
  • Karjalainen, Antti; Weiser, Philip Michael; Makkonen, I.; Reinertsen, Vilde Mari; Vines, Lasse & Tuomisto, Filip (2021). Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3. Journal of Applied Physics. ISSN 0021-8979. 129(16). doi: 10.1063/5.0042518. Full text in Research Archive
  • Frodason, Ymir Kalmann; Zimmermann, Christian; Verhoeven, Espen Førdestrøm; Weiser, Philip Michael; Vines, Lasse & Varley, Joel B (2021). Multistability of isolated and hydrogenated Ga-O divacancies in beta-Ga2O3. PHYSICAL REVIEW MATERIALS. ISSN 2475-9953. 5. doi: 10.1103/PhysRevMaterials.5.025402. Full text in Research Archive
  • Linnarsson, Margareta; Hallen, Anders & Vines, Lasse (2020). Intentional and unintentional channeling during implantation of p-dopants in 4h-sic. Materials Science Forum. ISSN 0255-5476. 1004, p. 689–697. doi: 10.4028/www.scientific.net/MSF.1004.689. Full text in Research Archive
  • Martinho, Filipe; Lopez-Marino, Simon; Espindola-Rodriguez, Moises; Hajijafarassar, Alireza; Stulen, Fredrik Arnesen & Grini, Sigbjørn [Show all 14 contributors for this article] (2020). Persistent Double-Layer Formation in Kesterite Solar Cells: A Critical Review. ACS Applied Materials & Interfaces. ISSN 1944-8244. 12(35), p. 39405–39424. doi: 10.1021/acsami.0c10068.
  • Woerle, Judith; Bathen, Marianne Etzelmüller; Prokscha, Thomas; Galeckas, Augustinas; Ayedh, Hussein Mohammed Hussein & Vines, Lasse [Show all 7 contributors for this article] (2020). Muon Interaction with Negative-U and High-Spin-State Defects: Differentiating Between C and Si Vacancies in 4H-SiC. Physical Review Applied. ISSN 2331-7019. 14. doi: 10.1103/PhysRevApplied.14.054053. Full text in Research Archive
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2020). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Physical review B (PRB). ISSN 2469-9950. 102(18). doi: 10.1103/PhysRevB.102.184111. Full text in Research Archive
  • Bathen, Marianne Etzelmüller; Vines, Lasse & Coutinho, José (2020). First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC. Journal of Physics: Condensed Matter. ISSN 0953-8984. 33(7). doi: 10.1088/1361-648X/abc804. Full text in Research Archive
  • Vasquez, Geraldo Cristian; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Bazioti, Kalliopi; Johansen, Klaus Magnus H & Maestre, D. [Show all 11 contributors for this article] (2020). Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles. Nano Letters. ISSN 1530-6984. 20(12), p. 8689–8695. doi: 10.1021/acs.nanolett.0c03472. Full text in Research Archive
  • Reinertsen, Vilde Mari; Weiser, Philip Michael; Frodason, Ymir Kalmann; Bathen, Marianne Etzelmüller; Vines, Lasse & Johansen, Klaus Magnus H (2020). Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals. Applied Physics Letters. ISSN 0003-6951. 117. doi: 10.1063/5.0027333. Full text in Research Archive
  • Frodason, Ymir Kalmann; Johansen, Klaus Magnus H; Vines, Lasse & Varley, J.B. (2020). Self-trapped hole and impurity-related broad luminescence in β-Ga2O3. Journal of Applied Physics. ISSN 0021-8979. 127(7). doi: 10.1063/1.5140742. Full text in Research Archive
  • Bonkerud, Julie; Zimmermann, Christian; Herklotz, Frank; Weiser, Philip Michael; Seiffert, Christoph & Verhoeven, Espen Førdestrøm [Show all 8 contributors for this article] (2020). Electrically-active defects in reduced and hydrogenated rutile TiO2. Semiconductor Science and Technology. ISSN 0268-1242. 36(1). doi: 10.1088/1361-6641/abc854. Full text in Research Archive
  • Borgersen, Jon; Vines, Lasse; Frodason, Ymir Kalmann; Kuznetsov, Andrej; von Wenckstern, Holger & Grundmann, Marius [Show all 9 contributors for this article] (2020). Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials. Journal of Physics: Condensed Matter. ISSN 0953-8984. 32(50). doi: 10.1088/1361-648X/abac8b. Full text in Research Archive
  • Müting, Johanna; Bobal, Viktor; Willinger, Marc G.; Zadeh, Ali Baghi; Reidt, Steffen & Vines, Lasse [Show all 7 contributors for this article] (2020). Spatially resolved diffusion of aluminum in 4H-SiC during postimplantation annealing. IEEE Transactions on Electron Devices. ISSN 0018-9383. 67(10), p. 4360–4365. doi: 10.1109/TED.2020.3018690.
  • Weiser, Philip Michael; Zimmermann, Christian; Bonkerud, Julie; Vines, Lasse & Monakhov, Eduard (2020). Donors and polaronic absorption in rutile TiO2 single crystals. Journal of Applied Physics. ISSN 0021-8979. 128(14). doi: 10.1063/5.0027434. Full text in Research Archive
  • Gogova-Petrova, Daniela; Olsen, Vegard Skiftestad; Bazioti, Kalliopi; Lee, In-Hwan; Prytz, Øystein & Vines, Lasse [Show all 7 contributors for this article] (2020). High electron mobility single-crystalline ZnSnN2 on ZnO (0001) substrates. CrysteEngComm. ISSN 1466-8033. 22(38), p. 6268–6274. doi: 10.1039/d0ce00861c. Full text in Research Archive
  • Bathen, Marianne Etzelmüller; Linnarsson, Margareta; Ghezellou, Mizagh; Ul Hassan, Jawad & Vines, Lasse (2020). Influence of Carbon Cap on Self-Diffusion in Silicon Carbide. Crystals. ISSN 2073-4352. 10(9). doi: 10.3390/cryst10090752. Full text in Research Archive
  • Hajijafarassar, Alireza; Martinho, Filipe; Stulen, Fredrik Arnesen; Grini, Sigbjørn; Lopez-Marino, Simon & Espindola-Rodriguez, Moises [Show all 15 contributors for this article] (2020). Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier . Solar Energy Materials and Solar Cells. ISSN 0927-0248. 207. doi: 10.1016/j.solmat.2019.110334. Full text in Research Archive
  • Zimmermann, Christian; Frodason, Ymir Kalmann; Rønning, Vegard; Varley, Joel B & Vines, Lasse (2020). Combining steady-state photo-capacitance spectra with first-principles calculations: the case of Fe and Ti in β-Ga2O3. New Journal of Physics. ISSN 1367-2630. 22. doi: 10.1088/1367-2630/ab8e5b. Full text in Research Archive
  • Becerril-Romero, Ignacio; Sylla, Diouldé; Placidi, Marcel; Sánchez, Yudania; Andrade-Arvizu, Jacob & Izquierdo-Roca, Victor [Show all 16 contributors for this article] (2020). Transition-Metal Oxides for Kesterite Solar Cells Developed on Transparent Substrates. ACS Applied Materials & Interfaces. ISSN 1944-8244. 12, p. 33656–33669. doi: 10.1021/acsami.0c06992.
  • Müting, Johanna; Bobal, Viktor; Sky, Thomas Neset; Vines, Lasse & Grossner, Ulrike (2020). Lateral straggling of implanted aluminum in 4H-SiC. Applied Physics Letters. ISSN 0003-6951. 116(1). doi: 10.1063/1.5132616. Full text in Research Archive
  • Zimmermann, Christian; Frodason, Ymir Kalmann; Barnard, Abraham Willem; Varley, Joel B; Irmscher, Klaus & Galazka, Zbigniew [Show all 10 contributors for this article] (2020). Ti- and Fe-related charge transition levels in beta-Ga2O3. Applied Physics Letters. ISSN 0003-6951. 116(7). doi: 10.1063/1.5139402. Full text in Research Archive
  • Martinho, Filipe; Hajijafarassar, Alireza; Lopez-Marino, Simon; Espindola-Rodriguez, Moises; Engberg, Sara & Gansukh, Mungunshagai [Show all 14 contributors for this article] (2020). Nitride-Based Interfacial Layers for Monolithic Tandem Integration of New Solar Energy Materials on Si: The Case of CZTS. ACS Applied Energy Materials. ISSN 2574-0962. 3(5), p. 4600–4609. doi: 10.1021/acsaem.0c00280.
  • Gan, Jiantuo; Hoye, Robert L.Z; Levskaya, Yulia; Vines, Lasse; Marin, Andrew T. & MacManus-Driscoll, Judith L. [Show all 7 contributors for this article] (2020). Elucidating the origin of external quantum efficiency losses in cuprous oxide solar cells through defect analysis. Solar Energy Materials and Solar Cells. ISSN 0927-0248. 209. doi: 10.1016/j.solmat.2020.110418. Full text in Research Archive
  • Grini, Sigbjørn; Aboulfadl, Hisham; Ross, Nils; Persson, Clas; Platzer-Björkman, Charlotte & Thuvander, Mattias [Show all 7 contributors for this article] (2020). Dynamic Impurity Redistributions in Kesterite Absorbers. Physica status solidi (b). ISSN 0370-1972. 257(6). doi: 10.1002/pssb.202000062. Full text in Research Archive
  • Zimmermann, Christian; Rønning, Vegard; Frodason, Ymir Kalmann; Bobal, Viktor; Varley, Joel B & Vines, Lasse (2020). Primary intrinsic defects and their charge transition levels in beta-Ga2O3. PHYSICAL REVIEW MATERIALS. ISSN 2475-9953. 4(7). doi: 10.1103/PhysRevMaterials.4.074605. Full text in Research Archive
  • Bonkerud, Julie; Zimmermann, Christian; Weiser, Philip Michael; Aarholt, Thomas; Verhoeven, Espen Førdestrøm & Vines, Lasse [Show all 8 contributors for this article] (2020). Fabrication and characterization of Schottky barrier diodes on rutile TiO2. Materials Research Express. ISSN 2053-1591. 7(6). doi: 10.1088/2053-1591/ab9777. Full text in Research Archive
  • Zimmermann, Christian; Verhoeven, Espen Førdestrøm; Frodason, Ymir Kalmann; Weiser, Philip Michael; Varley, Joel B & Vines, Lasse (2020). Formation and control of the E2* center in implanted b-Ga2O3 by reverse-bias and zero-bias annealing. Journal of Physics D: Applied Physics. ISSN 0022-3727. 53(46). doi: 10.1088/1361-6463/aba64d. Full text in Research Archive
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Coutinho, José & Vines, Lasse (2020). Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 127(8). doi: 10.1063/1.5140659. Full text in Research Archive
  • Bazioti, Kalliopi; Olsen, Vegard Skiftestad; Kuznetsov, Andrej; Vines, Lasse & Prytz, Øystein (2020). Formation of N2 bubbles along grain boundaries in (ZnO)1−x(GaN)x: nanoscale STEM-EELS studies . Physical Chemistry, Chemical Physics - PCCP. ISSN 1463-9076. 22(7), p. 3779–3783. doi: 10.1039/c9cp06025a. Full text in Research Archive
  • Vasquez, Geraldo Cristian; Johansen, Klaus Magnus H; Galeckas, Augustinas; Vines, Lasse & Svensson, Bengt Gunnar (2020). Optical signatures of single ion tracks in ZnO. Nanoscale Advances. 2(2), p. 724–733. doi: 10.1039/C9NA00677J. Full text in Research Archive
  • Abad, Sara; Vasquez, Geraldo Cristian; Vines, Lasse & Ranchal, Rocío (2020). Use of Ga2O3[1 0 0] monocrystals as substrates for the synthesis of GaFeO3 thin films. Materials Letters. ISSN 0167-577X. 261. doi: 10.1016/j.matlet.2019.126949.
  • Linnarsson, M.K.; Hallen, Anders & Vines, Lasse (2019). Intentional and unintentional channeling during implantation of 51V ions into 4H-SiC. Semiconductor Science and Technology. ISSN 0268-1242. 34. doi: 10.1088/1361-6641/ab4163. Full text in Research Archive
  • Zatsepin, Dmitry A; Boukhvalov, Danil W; Zatsepin, Anatoly F; Vines, Lasse; Gogova-Petrova, Daniela & Shur, Vladimir Ya [Show all 7 contributors for this article] (2019). Bulk In2O3 crystals grown by chemical vapour transport: a combination of XPS and DFT studies. Journal of materials science. Materials in electronics. ISSN 0957-4522. 30(20), p. 18753–18758. doi: 10.1007/s10854-019-02228-6. Full text in Research Archive
  • Hassa, Anna; von Wenckstern, Holger; Vines, Lasse & Grundmann, M (2019). Influence of Oxygen Pressure on Growth of Si-Doped beta-(AlxGa1-x)(2)O-3 Thin Films on c-Sapphire Substrates by Pulsed Laser Deposition. ECS Journal of Solid State Science and Technology. ISSN 2162-8769. 8(7), p. Q3217–Q3220. doi: 10.1149/2.0411907jss. Full text in Research Archive
  • Prucnal, Slawomir; Berencén, Yonder; Wang, Mao; Georgiev, Yordan Nikolaev; Erbe, Artur & Khan, Muhammad B. [Show all 18 contributors for this article] (2019). Nanoscale n++-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy. Journal of Applied Physics. ISSN 0021-8979. 125(24), p. 1–10. doi: 10.1063/1.5080289. Full text in Research Archive
  • Linnarsson, MK; Hallen, Anders & Vines, Lasse (2019). Influence of a thin amorphous surface layer on de-channeling during aluminum implantation at different temperatures into 4H-SiC. Applied Physics A: Materials Science & Processing. ISSN 0947-8396. 125(12), p. 1–7. doi: 10.1007/s00339-019-3144-1. Full text in Research Archive
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, José [Show all 8 contributors for this article] (2019). Electrical charge state identification and control for the silicon vacancy in 4H-SiC. npj Quantum Information. ISSN 2056-6387. 5(1), p. 1–9. doi: 10.1038/s41534-019-0227-y. Full text in Research Archive
  • Frodason, Ymir Kalmann; Johansen, Klaus Magnus H; Galeckas, Augustinas & Vines, Lasse (2019). Broad luminescence from donor-complexed LiZn and NaZn acceptors in ZnO. Physical review B (PRB). ISSN 2469-9950. 100(18). doi: 10.1103/PhysRevB.100.184102. Full text in Research Archive
  • Schifano, Ramon; Jakiela, R; Galeckas, Augustinas; Kopalko, K; Herklotz, Frank & Johansen, Klaus Magnus H [Show all 7 contributors for this article] (2019). Role of intrinsic and extrinsic defects in H implanted hydrothermally grown ZnO. Journal of Applied Physics. ISSN 0021-8979. 126(12). doi: 10.1063/1.5115597. Full text in Research Archive
  • Hallen, Anders; Linnarsson, Margareta & Vines, Lasse (2019). Recent advances in the doping of 4H-SiC by channeled ion implantation. Materials Science Forum. ISSN 0255-5476. 963 MSF, p. 375–381. doi: 10.4028/www.scientific.net/MSF.963.375.
  • Linnarsson, Margareta; Hallen, Anders; Vines, Lasse & Svensson, Bengt Gunnar (2019). Channeled Implantations of p-Type Dopants into 4H-SiC at Different Temperatures. Materials Science Forum. ISSN 0255-5476. 963 MSF, p. 382–385. doi: 10.4028/www.scientific.net/MSF.963.382.
  • Olsen, Vegard Skiftestad; Baldissera, Gustavo; Zimmermann, Christian; Granerød, Cecilie Skjold; Bazioti, Kalliopi & Galeckas, Augustinas [Show all 11 contributors for this article] (2019). Evidence of defect band mechanism responsible for band gap evolution in (ZnO)1−x(GaN)x alloys. Physical review B (PRB). ISSN 2469-9950. 100(16). doi: 10.1103/PhysRevB.100.165201. Full text in Research Archive
  • Frodason, Ymir Kalmann; Johansen, Klaus Magnus H; Alkauskas, A & Vines, Lasse (2019). Negative- U and polaronic behavior of the Zn-O divacancy in ZnO. Physical review B (PRB). ISSN 2469-9950. 99(17), p. 1–7. doi: 10.1103/PhysRevB.99.174106.
  • Bazioti, Kalliopi; Azarov, Alexander; Johansen, Klaus Magnus H; Svensson, Bengt Gunnar; Vines, Lasse & Kuznetsov, Andrej [Show all 7 contributors for this article] (2019). Role of Nitrogen in Defect Evolution in Zinc Oxide: STEM−EELS Nanoscale Investigations. The Journal of Physical Chemistry Letters. ISSN 1948-7185. 10(16), p. 4725–4730. doi: 10.1021/acs.jpclett.9b01472. Full text in Research Archive

View all works in Cristin

  • Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2022). Zn diffusion in 𝛽-Ga2O3 using SIMS.
  • Lavrov, E.V.; Chaplygin, I.; Herklotz, Frank; Melnikov, V.V.; Kutin, Y. & Vines, Lasse (2021). Publisher's note: Dominant hydrogen complex in natural anatase TiO2 (J. Appl. Phys. (2021) 130 (145701) DOI: 10.1063/5.0067495). Journal of Applied Physics. ISSN 0021-8979. 130(21). doi: 10.1063/5.0078788.
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2021). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Enga, Marius & Vines, Lasse (2021). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
  • Olsen, Vegard Skiftestad; Øversjøen, Vetle; Frodason, Ymir Kalmann; Cooil, Simon; Lee, In-Hwan & Vines, Lasse [Show all 7 contributors for this article] (2021). Electrical control in ZnSnN2 by tailoring intrinsic and extrinsic defects.
  • Karlsen, Kjetil; Monakhov, Eduard; Bergum, Kristin; Vines, Lasse & Thue Jensen, Ingvild (2021). Electronic properties and dominant levels in ZnON.
  • Bazioti, Kalliopi; Olsen, Vegard Skiftestad; Azarov, Alexander; Johansen, Klaus Magnus H; Kuznetsov, Andrej & Vines, Lasse [Show all 7 contributors for this article] (2021). Thermal evolution of point and extended defects in N-implanted ZnO and (ZnO)1−x(GaN)x thin films: STEM-EELS investigations.
  • Zimmermann, Christian; Frodason, Ymir Kalmann; Varley, Joel Basile; Verhoeven, Espen Førdestrøm; Rønning, Vegard & Weiser, Philip Michael [Show all 15 contributors for this article] (2021). Identification of Fe-, Ti- and H-related Charge-state Transition Levels in β-Ga2O3.
  • Langørgen, Amanda; Karsthof, Robert Michael; Weiser, Philip Michael; Cavani, Olivier; Grasset, Romain & Frodason, Ymir Kalmann [Show all 8 contributors for this article] (2021). Steady-state Photocapacitance Spectroscopy of Intrinsic Defects in Electron-Irradiated β-Ga₂O₃.
  • Krzyzaniak, Patryk Piotr; Frodason, Ymir Kalmann; Weiser, Philip Michael; Vines, Lasse & Johansen, Klaus Magnus H (2021). Diffusion of donor dopants in β-Ga2O3 and interplay with gallium vacancies.
  • Frodason, Ymir Kalmann; Zimmermann, Christian; Verhoeven, Espen Førdestrøm; Weiser, Philip Michael; Vines, Lasse & Varley, Joel Basile (2021). Multistability of Ga-O divacancies in β-Ga2O3.
  • Kjeldby, Snorre Braathen; Azarov, Alexander; Aarholt, Thomas; Prytz, Øystein & Vines, Lasse (2021). Defect-annealing in Si+-implanted β-Ga2O3.
  • Kjeldby, Snorre Braathen; Nguyen, Phuong Dan; Haug, Kristian; Galeckas, Augustinas; Jensen, Ingvild Julie Thue & Thøgersen, Annett [Show all 8 contributors for this article] (2021). EELS and SEM-CL investigations of ZnFe2O4 nanoparticles and iron-decorated inversion domain boundaries in bulk ZnO.
  • Elgvin, Cana; Nguyen, Phuong Dan; Both, Kevin Gregor; Vines, Lasse & Prytz, Øystein (2021). Crystallographically oriented ZnFe2O4 nanoparticles in ZnO thin films .
  • Sopiha, Kostiantyn; Grini, Sigbjørn; Platzer-Björkman, Charlotte; Vines, Lasse & Persson, Clas (2020). Strong interplay between Na-and O-related defects in Cu-based chalcogenides.
  • Bazioti, Kalliopi; Olsen, Vegard Skiftestad; Azarov, Alexander; Johansen, Klaus Magnus H; Svensson, Bengt Gunnar & Kuznetsov, Andrej [Show all 8 contributors for this article] (2020). Role of nitrogren in defect evolution in ZnO and (ZnO)₁−ₓ(GaN)ₓ: STEM-EELS nanoscale investigations.
  • Borgersen, Jon; Vines, Lasse; Johansen, Klaus Magnus H; Kuznetsov, Andrej; von Wenckstern, Holger & Perez, Jesus Zuniga [Show all 7 contributors for this article] (2019). Using intrinsic defects as dopants in wide band gap semiconducting oxides.
  • Borgersen, Jon; Johansen, Klaus Magnus H; Vines, Lasse; Kuznetsov, Andrej; Frodason, Ymir Kalmann & von Wenckstern, Holger [Show all 9 contributors for this article] (2019). Electrical properties of intrinsic defects in wide band gap oxides.
  • Vines, Lasse; Ingebrigtsen, Mads Eide; Zimmermann, Christian; Rønning, Vegard & Kuznetsov, Andrej (2019). Electrically Active Defects in β-Ga2O3 .
  • Vines, Lasse (2019). Irradiation-induced deep level defects in β-Ga2O3 .
  • Bazioti, Kalliopi; Olsen, Vegard Skiftestad; Azarov, Alexander; Kuznetsov, Andrej; Vines, Lasse & Prytz, Øystein (2019). Defect formation and thermal evolution in ZnO-based structures (Highlight talk).
  • Frodason, Ymir Kalmann; Johansen, Klaus Magnus H; Galeckas, Augustinas & Vines, Lasse (2019). Optical properties of donor-complexed Li_Zn in ZnO .
  • Vasquez, Geraldo Cristian; Bazioti, Kalliopi; Galeckas, Augustinas; Johansen, Klaus Magnus H; Granerød, Cecilie Skjold & Nguyen, Phuong Dan [Show all 8 contributors for this article] (2019). Luminescent properties of Zn2GeO4 nanoparticles embedded in ZnO.
  • Vasquez, Geraldo Cristian; Galeckas, Augustinas; Johansen, Klaus Magnus H; Vines, Lasse & Svensson, Bengt Gunnar (2019). Optical and electrical properties of single ion-tracks in crystalline SiC.
  • Abad, Sara; Prados, Alicia; Muñoz-Noval, Alvaro; Vasquez, Geraldo Cristian; Vines, Lasse & Ranchal, Rocío (2019). Use of electrodeposition and thermal oxidation for the synthesis of Ga-Fe-O thin films.
  • Nguyen, Phuong Dan; Granerød, Cecilie Skjold; Aarseth, Bjørn Lupton; Bazioti, Kalliopi; Azarov, Alexander & Svensson, Bengt Gunnar [Show all 8 contributors for this article] (2019). Structural and optical properties of individual Zn2GeO4 particles embedded in ZnO.
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, J [Show all 7 contributors for this article] (2019). Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-SiC.
  • Enga, Marius Johan; Vines, Lasse & Bathen, Marianne Etzelmüller (2021). Exploring Defects in Silicon Carbide for Quantum Technologies; A Density Functional Theory Study. Universitetet i Oslo, Det matematisk-naturvitenskapelige fakultet.
  • Krzyzaniak, Patryk Piotr & Vines, Lasse (2021). Development of β-Ga2O3 as a novel material for power electronics, dopant diffusion and defect interaction. Universitetet i Oslo, Det matematisk-naturvitenskapelige fakultet.
  • Selnesaunet, Gard Momrak; Vines, Lasse & Bathen, Marianne Etzelmüller (2021). Nanostructuring of SiC for novel defect-based quantum technologies. Universitetet i Oslo, Det matematisk-naturvitenskapelige fakultet.
  • Isaksen, Ranvei Dahl & Vines, Lasse (2021). IR- og dataanalyse for feildeteksjon og diagnostisering av solcellemoduler. Universitetet i Oslo, Det matematisk-naturvitenskapelige fakultet.
  • Øversjøen, Vetle; Vines, Lasse & Olsen, Vegard Skiftestad (2021). Development of Earth Abundant ZnSnN2 for Solar Cell Applications. Universitetet i Oslo, Det matematisk-naturvitenskapelige fakultet.
  • Krzyzaniak, Patryk Piotr; Vines, Lasse & Johansen, Klaus Magnus H (2021). Development of b-Ga2O3 as a novel material for power electronics, dopant diffusion and defect interaction. UiO.
  • Verhoeven, Espen Førdestrøm & Vines, Lasse (2020). Determining Hydrogen's influence on electrically active defects in β - Ga2O3. Kjemisk Institutt, Universitetet i Oslo.
  • Sødahl, Elin Dypvik; Bergum, Kristin & Vines, Lasse (2020). HiPIMS deposition and characterization of amorphous ZnOxNy for solar cell applications. Kjemisk Institutt, Universitetet i Oslo.
  • Jubskås, Eirik Koch; Vines, Lasse & Haug, Hallvard (2020). Al2O3 Layers Deposited by Atomic Layer Deposition for Surface Passivation and Passivated Contacts in High Efficiency Silicon Based Solar Cells. Kjemisk Institutt, Universitetet i Oslo.
  • Ormann, Brage Otto; Norby, Truls Eivind & Vines, Lasse (2020). Stable oxide p-n heterojunctions -- NiO-ZnO based transistor. Kjemisk Institutt, Universitetet i Oslo.
  • James, Roystan; Norby, Truls Eivind; Vines, Lasse & Bjørheim, Tor Svendsen (2020). Electrical properties of La2CuO4 and Nd2CuO4 and their coexistent p-n heterojunction. Kjemisk Institutt, Universitetet i Oslo.
  • Reinertsen, Vilde Mari & Vines, Lasse (2019). Diffusion of deuterium in crystalline beta-Ga2O3. Fysisk institutt, Universitetet i Oslo.
  • Stulen, Fredrik Arnesen; Vines, Lasse & Grini, Sigbjørn (2019). Mot en 2-Terminal Cu2Zn(Sn,Ge)S4-på-Si Tandem Solcelle. Fysisk institutt, Universitetet i Oslo.

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Published Nov. 4, 2010 12:42 PM - Last modified Sep. 1, 2020 3:34 PM