Lasse Vines

Professor - Halvlederfysikk
Bilde av Lasse Vines
English version of this page
Telefon +47 22840940
Brukernavn
Besøksadresse MiNa-Lab Gaustadalleen 23c 0373 Oslo
Postadresse Postboks 1048 Blindern 0316 Oslo

Faglige interesser

  • Halvlederfysikk og materialfysikk i bulk, tynne filmer og nanostrukturer, med anvendelser relatert til nye solcellematerialer, kraftelektronikk og kvanteteknologi.
  • Punkt defekter, doping og diffusjon i halvledere. 

Bakgrunn

  • 2018  -              :  Professor ved seksjon for halvlederfysikk, Fysisk Institutt/Senter for Materialvitenskap og Nanoteknologi
  • 2013  - 2018     :  1. Amanuensis ved Gruppe for halvlederfysikk, Fysisk Institutt/Senter for Materialvitenskap og Nanoteknologi
  • 2008  -  2013    :  Post Doc ved Gruppe for halvlederfysikk, Fysisk Institutt/Senter for Materialvitenskap og Nanoteknologi
  • 2004  -  2008    :  PhD ved Gruppe for halvlederfysikk, Fysisk Institutt/Senter for Materialvitenskap og Nanoteknologi
  • 2001  - 2004: Forsker ved Forsvarets forskningsinstitutt
  • 1996  - 2001: Bsc/Msc ved NTNU (Fysikk og Matematikk)

 

Emneord: Halvledere, Punkt defekter, Diffusjon, SIMS, DLTS, SPM

Publikasjoner

  • Assar, Alireza; Martinho, Filipe; Larsen, Jes; Saini, Nishant; Shearer, Denver & Moro, Marcos V. [Vis alle 15 forfattere av denne artikkelen] (2022). Gettering in polySi/SiO xpassivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience. ACS Applied Materials & Interfaces. ISSN 1944-8244. 14(12), s. 14342–14358. doi: 10.1021/acsami.2c00319.
  • Kjeldby, S.B.; Azarov, Alexander; Nguyen, Phuong Dan; Venkatachalapathy, Vishnukanthan; Mikšová, R. & MacKová, A. [Vis alle 9 forfattere av denne artikkelen] (2022). Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide. Journal of Applied Physics. ISSN 0021-8979. 131(12). doi: 10.1063/5.0083858.
  • Langørgen, Amanda; Zimmermann, Christian; Frodason, Ymir Kalmann; Førdestrøm Verhoeven, Espen; Weiser, Philip Michael & Karsthof, Robert Michael [Vis alle 8 forfattere av denne artikkelen] (2022). Influence of heat treatments in H 2 and Ar on the E <inf>1</inf>center in β -Ga<inf>2</inf>O<inf>3</inf>. Journal of Applied Physics. ISSN 0021-8979. 131(11). doi: 10.1063/5.0083861.
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Kuznetsov, Andrej & Vines, Lasse (2022). Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 131. doi: 10.1063/5.0077308. Fulltekst i vitenarkiv
  • Müting, Johanna; Bobal, Viktor; Vines, Lasse & Grossner, Ulrike (2021). Phosphorus implantation into 4H-SiC at room and elevated temperature. Semiconductor Science and Technology. ISSN 0268-1242. 36(6). doi: 10.1088/1361-6641/abf55a.
  • Alfieri, Giovanni; Mihaila, Andrei; Godignon, P.; Varley, Joel Basile & Vines, Lasse (2021). Deep level study of chlorine-based dry etched beta - Ga2O3. Journal of Applied Physics. ISSN 0021-8979. 130(2). doi: 10.1063/5.0050416.
  • Duan, Juanmei; Wang, Changan; Vines, Lasse; Rebohle, Lars; Helm, Manfred & Zeng, Yu-Jia [Vis alle 8 forfattere av denne artikkelen] (2021). Increased dephasing length in heavily doped GaAs. New Journal of Physics. ISSN 1367-2630. 23(8). doi: 10.1088/1367-2630/ac1a98.
  • Linnarsson, Margareta; Vines, Lasse & Hallen, Anders (2021). Influence from the electronic shell structure on the range distribution during channeling of 40-300 keV ions in 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 130(7). doi: 10.1063/5.0054188.
  • Borgersen, Jon; Johansen, Klaus Magnus H; Vines, Lasse; Wenckstern, Holger von; Grundmann, Marius & Kuznetsov, Andrej (2021). Fermi level controlled point defect balance in ion irradiated indium oxide. Journal of Applied Physics. ISSN 0021-8979. 130(8). doi: 10.1063/5.0062135. Fulltekst i vitenarkiv
  • Bonkerud, Julie; Zimmermann, Christian; Weiser, Philip Michael; Vines, Lasse & Monakhov, Eduard (2021). On the permittivity of titanium dioxide. Scientific Reports. ISSN 2045-2322. 11. doi: 10.1038/s41598-021-92021-5. Fulltekst i vitenarkiv
  • Lavrov, E.V.; Chaplygin, I.; Herklotz, F.; Melnikov, V.V.; Kutin, Y. & Vines, Lasse (2021). Dominant hydrogen complex in natural anatase TiO2. Journal of Applied Physics. ISSN 0021-8979. 130(14). doi: 10.1063/5.0067495. Fulltekst i vitenarkiv
  • Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Vines, Lasse; Monakhov, Eduard; Lee, In-Hwan & Kuznetsov, Andrej (2021). Activation energy of silicon diffusion in gallium oxide: Roles of the mediating defects charge states and phase modification. Applied Physics Letters. ISSN 0003-6951. 119(18). doi: 10.1063/5.0070045. Fulltekst i vitenarkiv
  • Aarseth, Bjørn Lupton; Granerød, Cecilie Skjold; Galeckas, Augustinas; Azarov, Alexander; Nguyen, Phuong Dan & Prytz, Øystein [Vis alle 7 forfattere av denne artikkelen] (2021). Formation and functionalization of Ge-nanoparticles in ZnO. Nanotechnology. ISSN 0957-4484. 32(50). doi: 10.1088/1361-6528/ac264a. Fulltekst i vitenarkiv
  • Bathen, Marianne Etzelmüller & Vines, Lasse (2021). Manipulating Single-Photon Emission from Point Defects in Diamond and Silicon Carbide. Advanced Quantum Technologies. 4. doi: 10.1002/qute.202100003. Fulltekst i vitenarkiv
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Karsthof, Robert Michael; Delteil, Aymeric; Sallet, Vincent & Kuznetsov, Andrej [Vis alle 7 forfattere av denne artikkelen] (2021). Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide. Physical review B (PRB). ISSN 2469-9950. 104. doi: 10.1103/PhysRevB.104.045120. Fulltekst i vitenarkiv
  • Olsen, Vegard Skiftestad; Øversjøen, Vetle; Gogova-Petrova, Daniela; Pecz, Bela; Galeckas, Augustinas & Borgersen, Jon Arthur [Vis alle 9 forfattere av denne artikkelen] (2021). ZnSnN2 in Real Space and k-Space: Lattice Constants, Dislocation Density, and Optical Band Gap. Advanced Optical Materials. ISSN 2195-1071. doi: 10.1002/adom.202100015.
  • Karjalainen, Antti; Weiser, Philip Michael; Makkonen, I.; Reinertsen, Vilde Mari; Vines, Lasse & Tuomisto, Filip (2021). Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3. Journal of Applied Physics. ISSN 0021-8979. 129(16). doi: 10.1063/5.0042518. Fulltekst i vitenarkiv
  • Frodason, Ymir Kalmann; Zimmermann, Christian; Verhoeven, Espen Førdestrøm; Weiser, Philip Michael; Vines, Lasse & Varley, Joel B (2021). Multistability of isolated and hydrogenated Ga-O divacancies in beta-Ga2O3. PHYSICAL REVIEW MATERIALS. ISSN 2475-9953. 5. doi: 10.1103/PhysRevMaterials.5.025402. Fulltekst i vitenarkiv
  • Linnarsson, Margareta; Hallen, Anders & Vines, Lasse (2020). Intentional and unintentional channeling during implantation of p-dopants in 4h-sic. Materials Science Forum. ISSN 0255-5476. 1004, s. 689–697. doi: 10.4028/www.scientific.net/MSF.1004.689. Fulltekst i vitenarkiv
  • Martinho, Filipe; Lopez-Marino, Simon; Espindola-Rodriguez, Moises; Hajijafarassar, Alireza; Stulen, Fredrik Arnesen & Grini, Sigbjørn [Vis alle 14 forfattere av denne artikkelen] (2020). Persistent Double-Layer Formation in Kesterite Solar Cells: A Critical Review. ACS Applied Materials & Interfaces. ISSN 1944-8244. 12(35), s. 39405–39424. doi: 10.1021/acsami.0c10068.
  • Woerle, Judith; Bathen, Marianne Etzelmüller; Prokscha, Thomas; Galeckas, Augustinas; Ayedh, Hussein Mohammed Hussein & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2020). Muon Interaction with Negative-U and High-Spin-State Defects: Differentiating Between C and Si Vacancies in 4H-SiC. Physical Review Applied. ISSN 2331-7019. 14. doi: 10.1103/PhysRevApplied.14.054053. Fulltekst i vitenarkiv
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2020). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Physical review B (PRB). ISSN 2469-9950. 102(18). doi: 10.1103/PhysRevB.102.184111. Fulltekst i vitenarkiv
  • Bathen, Marianne Etzelmüller; Vines, Lasse & Coutinho, José (2020). First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC. Journal of Physics: Condensed Matter. ISSN 0953-8984. 33(7). doi: 10.1088/1361-648X/abc804. Fulltekst i vitenarkiv
  • Vasquez, Geraldo Cristian; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Bazioti, Kalliopi; Johansen, Klaus Magnus H & Maestre, D. [Vis alle 11 forfattere av denne artikkelen] (2020). Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles. Nano Letters. ISSN 1530-6984. 20(12), s. 8689–8695. doi: 10.1021/acs.nanolett.0c03472. Fulltekst i vitenarkiv
  • Reinertsen, Vilde Mari; Weiser, Philip Michael; Frodason, Ymir Kalmann; Bathen, Marianne Etzelmüller; Vines, Lasse & Johansen, Klaus Magnus H (2020). Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals. Applied Physics Letters. ISSN 0003-6951. 117. doi: 10.1063/5.0027333. Fulltekst i vitenarkiv
  • Frodason, Ymir Kalmann; Johansen, Klaus Magnus H; Vines, Lasse & Varley, J.B. (2020). Self-trapped hole and impurity-related broad luminescence in β-Ga2O3. Journal of Applied Physics. ISSN 0021-8979. 127(7). doi: 10.1063/1.5140742. Fulltekst i vitenarkiv
  • Bonkerud, Julie; Zimmermann, Christian; Herklotz, Frank; Weiser, Philip Michael; Seiffert, Christoph & Verhoeven, Espen Førdestrøm [Vis alle 8 forfattere av denne artikkelen] (2020). Electrically-active defects in reduced and hydrogenated rutile TiO2. Semiconductor Science and Technology. ISSN 0268-1242. 36(1). doi: 10.1088/1361-6641/abc854. Fulltekst i vitenarkiv
  • Borgersen, Jon; Vines, Lasse; Frodason, Ymir Kalmann; Kuznetsov, Andrej; von Wenckstern, Holger & Grundmann, Marius [Vis alle 9 forfattere av denne artikkelen] (2020). Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials. Journal of Physics: Condensed Matter. ISSN 0953-8984. 32(50). doi: 10.1088/1361-648X/abac8b. Fulltekst i vitenarkiv
  • Müting, Johanna; Bobal, Viktor; Willinger, Marc G.; Zadeh, Ali Baghi; Reidt, Steffen & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2020). Spatially resolved diffusion of aluminum in 4H-SiC during postimplantation annealing. IEEE Transactions on Electron Devices. ISSN 0018-9383. 67(10), s. 4360–4365. doi: 10.1109/TED.2020.3018690.
  • Weiser, Philip Michael; Zimmermann, Christian; Bonkerud, Julie; Vines, Lasse & Monakhov, Eduard (2020). Donors and polaronic absorption in rutile TiO2 single crystals. Journal of Applied Physics. ISSN 0021-8979. 128(14). doi: 10.1063/5.0027434. Fulltekst i vitenarkiv
  • Gogova-Petrova, Daniela; Olsen, Vegard Skiftestad; Bazioti, Kalliopi; Lee, In-Hwan; Prytz, Øystein & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2020). High electron mobility single-crystalline ZnSnN2 on ZnO (0001) substrates. CrysteEngComm. ISSN 1466-8033. 22(38), s. 6268–6274. doi: 10.1039/d0ce00861c. Fulltekst i vitenarkiv
  • Bathen, Marianne Etzelmüller; Linnarsson, Margareta; Ghezellou, Mizagh; Ul Hassan, Jawad & Vines, Lasse (2020). Influence of Carbon Cap on Self-Diffusion in Silicon Carbide. Crystals. ISSN 2073-4352. 10(9). doi: 10.3390/cryst10090752. Fulltekst i vitenarkiv
  • Hajijafarassar, Alireza; Martinho, Filipe; Stulen, Fredrik Arnesen; Grini, Sigbjørn; Lopez-Marino, Simon & Espindola-Rodriguez, Moises [Vis alle 15 forfattere av denne artikkelen] (2020). Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier . Solar Energy Materials and Solar Cells. ISSN 0927-0248. 207. doi: 10.1016/j.solmat.2019.110334. Fulltekst i vitenarkiv
  • Zimmermann, Christian; Frodason, Ymir Kalmann; Rønning, Vegard; Varley, Joel B & Vines, Lasse (2020). Combining steady-state photo-capacitance spectra with first-principles calculations: the case of Fe and Ti in β-Ga2O3. New Journal of Physics. ISSN 1367-2630. 22. doi: 10.1088/1367-2630/ab8e5b. Fulltekst i vitenarkiv
  • Becerril-Romero, Ignacio; Sylla, Diouldé; Placidi, Marcel; Sánchez, Yudania; Andrade-Arvizu, Jacob & Izquierdo-Roca, Victor [Vis alle 16 forfattere av denne artikkelen] (2020). Transition-Metal Oxides for Kesterite Solar Cells Developed on Transparent Substrates. ACS Applied Materials & Interfaces. ISSN 1944-8244. 12, s. 33656–33669. doi: 10.1021/acsami.0c06992.
  • Müting, Johanna; Bobal, Viktor; Sky, Thomas Neset; Vines, Lasse & Grossner, Ulrike (2020). Lateral straggling of implanted aluminum in 4H-SiC. Applied Physics Letters. ISSN 0003-6951. 116(1). doi: 10.1063/1.5132616. Fulltekst i vitenarkiv
  • Zimmermann, Christian; Frodason, Ymir Kalmann; Barnard, Abraham Willem; Varley, Joel B; Irmscher, Klaus & Galazka, Zbigniew [Vis alle 10 forfattere av denne artikkelen] (2020). Ti- and Fe-related charge transition levels in beta-Ga2O3. Applied Physics Letters. ISSN 0003-6951. 116(7). doi: 10.1063/1.5139402. Fulltekst i vitenarkiv
  • Martinho, Filipe; Hajijafarassar, Alireza; Lopez-Marino, Simon; Espindola-Rodriguez, Moises; Engberg, Sara & Gansukh, Mungunshagai [Vis alle 14 forfattere av denne artikkelen] (2020). Nitride-Based Interfacial Layers for Monolithic Tandem Integration of New Solar Energy Materials on Si: The Case of CZTS. ACS Applied Energy Materials. ISSN 2574-0962. 3(5), s. 4600–4609. doi: 10.1021/acsaem.0c00280.
  • Gan, Jiantuo; Hoye, Robert L.Z; Levskaya, Yulia; Vines, Lasse; Marin, Andrew T. & MacManus-Driscoll, Judith L. [Vis alle 7 forfattere av denne artikkelen] (2020). Elucidating the origin of external quantum efficiency losses in cuprous oxide solar cells through defect analysis. Solar Energy Materials and Solar Cells. ISSN 0927-0248. 209. doi: 10.1016/j.solmat.2020.110418. Fulltekst i vitenarkiv
  • Grini, Sigbjørn; Aboulfadl, Hisham; Ross, Nils; Persson, Clas; Platzer-Björkman, Charlotte & Thuvander, Mattias [Vis alle 7 forfattere av denne artikkelen] (2020). Dynamic Impurity Redistributions in Kesterite Absorbers. Physica status solidi (b). ISSN 0370-1972. 257(6). doi: 10.1002/pssb.202000062. Fulltekst i vitenarkiv
  • Zimmermann, Christian; Rønning, Vegard; Frodason, Ymir Kalmann; Bobal, Viktor; Varley, Joel B & Vines, Lasse (2020). Primary intrinsic defects and their charge transition levels in beta-Ga2O3. PHYSICAL REVIEW MATERIALS. ISSN 2475-9953. 4(7). doi: 10.1103/PhysRevMaterials.4.074605. Fulltekst i vitenarkiv
  • Bonkerud, Julie; Zimmermann, Christian; Weiser, Philip Michael; Aarholt, Thomas; Verhoeven, Espen Førdestrøm & Vines, Lasse [Vis alle 8 forfattere av denne artikkelen] (2020). Fabrication and characterization of Schottky barrier diodes on rutile TiO2. Materials Research Express. ISSN 2053-1591. 7(6). doi: 10.1088/2053-1591/ab9777. Fulltekst i vitenarkiv
  • Zimmermann, Christian; Verhoeven, Espen Førdestrøm; Frodason, Ymir Kalmann; Weiser, Philip Michael; Varley, Joel B & Vines, Lasse (2020). Formation and control of the E2* center in implanted b-Ga2O3 by reverse-bias and zero-bias annealing. Journal of Physics D: Applied Physics. ISSN 0022-3727. 53(46). doi: 10.1088/1361-6463/aba64d. Fulltekst i vitenarkiv
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Coutinho, José & Vines, Lasse (2020). Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 127(8). doi: 10.1063/1.5140659. Fulltekst i vitenarkiv
  • Bazioti, Kalliopi; Olsen, Vegard Skiftestad; Kuznetsov, Andrej; Vines, Lasse & Prytz, Øystein (2020). Formation of N2 bubbles along grain boundaries in (ZnO)1−x(GaN)x: nanoscale STEM-EELS studies . Physical Chemistry, Chemical Physics - PCCP. ISSN 1463-9076. 22(7), s. 3779–3783. doi: 10.1039/c9cp06025a. Fulltekst i vitenarkiv
  • Vasquez, Geraldo Cristian; Johansen, Klaus Magnus H; Galeckas, Augustinas; Vines, Lasse & Svensson, Bengt Gunnar (2020). Optical signatures of single ion tracks in ZnO. Nanoscale Advances. 2(2), s. 724–733. doi: 10.1039/C9NA00677J. Fulltekst i vitenarkiv
  • Abad, Sara; Vasquez, Geraldo Cristian; Vines, Lasse & Ranchal, Rocío (2020). Use of Ga2O3[1 0 0] monocrystals as substrates for the synthesis of GaFeO3 thin films. Materials Letters. ISSN 0167-577X. 261. doi: 10.1016/j.matlet.2019.126949.
  • Linnarsson, M.K.; Hallen, Anders & Vines, Lasse (2019). Intentional and unintentional channeling during implantation of 51V ions into 4H-SiC. Semiconductor Science and Technology. ISSN 0268-1242. 34. doi: 10.1088/1361-6641/ab4163. Fulltekst i vitenarkiv
  • Zatsepin, Dmitry A; Boukhvalov, Danil W; Zatsepin, Anatoly F; Vines, Lasse; Gogova-Petrova, Daniela & Shur, Vladimir Ya [Vis alle 7 forfattere av denne artikkelen] (2019). Bulk In2O3 crystals grown by chemical vapour transport: a combination of XPS and DFT studies. Journal of materials science. Materials in electronics. ISSN 0957-4522. 30(20), s. 18753–18758. doi: 10.1007/s10854-019-02228-6. Fulltekst i vitenarkiv
  • Hassa, Anna; von Wenckstern, Holger; Vines, Lasse & Grundmann, M (2019). Influence of Oxygen Pressure on Growth of Si-Doped beta-(AlxGa1-x)(2)O-3 Thin Films on c-Sapphire Substrates by Pulsed Laser Deposition. ECS Journal of Solid State Science and Technology. ISSN 2162-8769. 8(7), s. Q3217–Q3220. doi: 10.1149/2.0411907jss. Fulltekst i vitenarkiv
  • Prucnal, Slawomir; Berencén, Yonder; Wang, Mao; Georgiev, Yordan Nikolaev; Erbe, Artur & Khan, Muhammad B. [Vis alle 18 forfattere av denne artikkelen] (2019). Nanoscale n++-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy. Journal of Applied Physics. ISSN 0021-8979. 125(24), s. 1–10. doi: 10.1063/1.5080289. Fulltekst i vitenarkiv
  • Linnarsson, MK; Hallen, Anders & Vines, Lasse (2019). Influence of a thin amorphous surface layer on de-channeling during aluminum implantation at different temperatures into 4H-SiC. Applied Physics A: Materials Science & Processing. ISSN 0947-8396. 125(12), s. 1–7. doi: 10.1007/s00339-019-3144-1. Fulltekst i vitenarkiv
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, José [Vis alle 8 forfattere av denne artikkelen] (2019). Electrical charge state identification and control for the silicon vacancy in 4H-SiC. npj Quantum Information. ISSN 2056-6387. 5(1), s. 1–9. doi: 10.1038/s41534-019-0227-y. Fulltekst i vitenarkiv
  • Frodason, Ymir Kalmann; Johansen, Klaus Magnus H; Galeckas, Augustinas & Vines, Lasse (2019). Broad luminescence from donor-complexed LiZn and NaZn acceptors in ZnO. Physical review B (PRB). ISSN 2469-9950. 100(18). doi: 10.1103/PhysRevB.100.184102. Fulltekst i vitenarkiv
  • Schifano, Ramon; Jakiela, R; Galeckas, Augustinas; Kopalko, K; Herklotz, Frank & Johansen, Klaus Magnus H [Vis alle 7 forfattere av denne artikkelen] (2019). Role of intrinsic and extrinsic defects in H implanted hydrothermally grown ZnO. Journal of Applied Physics. ISSN 0021-8979. 126(12). doi: 10.1063/1.5115597. Fulltekst i vitenarkiv
  • Hallen, Anders; Linnarsson, Margareta & Vines, Lasse (2019). Recent advances in the doping of 4H-SiC by channeled ion implantation. Materials Science Forum. ISSN 0255-5476. 963 MSF, s. 375–381. doi: 10.4028/www.scientific.net/MSF.963.375.
  • Linnarsson, Margareta; Hallen, Anders; Vines, Lasse & Svensson, Bengt Gunnar (2019). Channeled Implantations of p-Type Dopants into 4H-SiC at Different Temperatures. Materials Science Forum. ISSN 0255-5476. 963 MSF, s. 382–385. doi: 10.4028/www.scientific.net/MSF.963.382.
  • Olsen, Vegard Skiftestad; Baldissera, Gustavo; Zimmermann, Christian; Granerød, Cecilie Skjold; Bazioti, Kalliopi & Galeckas, Augustinas [Vis alle 11 forfattere av denne artikkelen] (2019). Evidence of defect band mechanism responsible for band gap evolution in (ZnO)1−x(GaN)x alloys. Physical review B (PRB). ISSN 2469-9950. 100(16). doi: 10.1103/PhysRevB.100.165201. Fulltekst i vitenarkiv
  • Frodason, Ymir Kalmann; Johansen, Klaus Magnus H; Alkauskas, A & Vines, Lasse (2019). Negative- U and polaronic behavior of the Zn-O divacancy in ZnO. Physical review B (PRB). ISSN 2469-9950. 99(17), s. 1–7. doi: 10.1103/PhysRevB.99.174106.

Se alle arbeider i Cristin

  • Norby, Truls; Karsthof, Robert Michael; Saeed, Sarmad Waheed; Kuznetsov, Andrej & Vines, Lasse (2022). The p-n junction has nothing to do with ionics. Does it? .
  • Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2022). Zn diffusion in 𝛽-Ga2O3 using SIMS.
  • Lavrov, E.V.; Chaplygin, I.; Herklotz, Frank; Melnikov, V.V.; Kutin, Y. & Vines, Lasse (2021). Publisher's note: Dominant hydrogen complex in natural anatase TiO2 (J. Appl. Phys. (2021) 130 (145701) DOI: 10.1063/5.0067495). Journal of Applied Physics. ISSN 0021-8979. 130(21). doi: 10.1063/5.0078788.
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2021). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Enga, Marius & Vines, Lasse (2021). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
  • Olsen, Vegard Skiftestad; Øversjøen, Vetle; Frodason, Ymir Kalmann; Cooil, Simon; Lee, In-Hwan & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2021). Electrical control in ZnSnN2 by tailoring intrinsic and extrinsic defects.
  • Karlsen, Kjetil; Monakhov, Eduard; Bergum, Kristin; Vines, Lasse & Thue Jensen, Ingvild (2021). Electronic properties and dominant levels in ZnON.
  • Bazioti, Kalliopi; Olsen, Vegard Skiftestad; Azarov, Alexander; Johansen, Klaus Magnus H; Kuznetsov, Andrej & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2021). Thermal evolution of point and extended defects in N-implanted ZnO and (ZnO)1−x(GaN)x thin films: STEM-EELS investigations.
  • Zimmermann, Christian; Frodason, Ymir Kalmann; Varley, Joel Basile; Verhoeven, Espen Førdestrøm; Rønning, Vegard & Weiser, Philip Michael [Vis alle 15 forfattere av denne artikkelen] (2021). Identification of Fe-, Ti- and H-related Charge-state Transition Levels in β-Ga2O3.
  • Langørgen, Amanda; Karsthof, Robert Michael; Weiser, Philip Michael; Cavani, Olivier; Grasset, Romain & Frodason, Ymir Kalmann [Vis alle 8 forfattere av denne artikkelen] (2021). Steady-state Photocapacitance Spectroscopy of Intrinsic Defects in Electron-Irradiated β-Ga₂O₃.
  • Krzyzaniak, Patryk Piotr; Frodason, Ymir Kalmann; Weiser, Philip Michael; Vines, Lasse & Johansen, Klaus Magnus H (2021). Diffusion of donor dopants in β-Ga2O3 and interplay with gallium vacancies.
  • Frodason, Ymir Kalmann; Zimmermann, Christian; Verhoeven, Espen Førdestrøm; Weiser, Philip Michael; Vines, Lasse & Varley, Joel Basile (2021). Multistability of Ga-O divacancies in β-Ga2O3.
  • Kjeldby, Snorre Braathen; Azarov, Alexander; Aarholt, Thomas; Prytz, Øystein & Vines, Lasse (2021). Defect-annealing in Si+-implanted β-Ga2O3.
  • Kjeldby, Snorre Braathen; Nguyen, Phuong Dan; Haug, Kristian; Galeckas, Augustinas; Jensen, Ingvild Julie Thue & Thøgersen, Annett [Vis alle 8 forfattere av denne artikkelen] (2021). EELS and SEM-CL investigations of ZnFe2O4 nanoparticles and iron-decorated inversion domain boundaries in bulk ZnO.
  • Elgvin, Cana; Nguyen, Phuong Dan; Both, Kevin Gregor; Vines, Lasse & Prytz, Øystein (2021). Crystallographically oriented ZnFe2O4 nanoparticles in ZnO thin films .
  • Sopiha, Kostiantyn; Grini, Sigbjørn; Platzer-Björkman, Charlotte; Vines, Lasse & Persson, Clas (2020). Strong interplay between Na-and O-related defects in Cu-based chalcogenides.
  • Bazioti, Kalliopi; Olsen, Vegard Skiftestad; Azarov, Alexander; Johansen, Klaus Magnus H; Svensson, Bengt Gunnar & Kuznetsov, Andrej [Vis alle 8 forfattere av denne artikkelen] (2020). Role of nitrogren in defect evolution in ZnO and (ZnO)₁−ₓ(GaN)ₓ: STEM-EELS nanoscale investigations.
  • Borgersen, Jon; Vines, Lasse; Johansen, Klaus Magnus H; Kuznetsov, Andrej; von Wenckstern, Holger & Perez, Jesus Zuniga [Vis alle 7 forfattere av denne artikkelen] (2019). Using intrinsic defects as dopants in wide band gap semiconducting oxides.
  • Borgersen, Jon; Johansen, Klaus Magnus H; Vines, Lasse; Kuznetsov, Andrej; Frodason, Ymir Kalmann & von Wenckstern, Holger [Vis alle 9 forfattere av denne artikkelen] (2019). Electrical properties of intrinsic defects in wide band gap oxides.
  • Vines, Lasse; Ingebrigtsen, Mads Eide; Zimmermann, Christian; Rønning, Vegard & Kuznetsov, Andrej (2019). Electrically Active Defects in β-Ga2O3 .
  • Vines, Lasse (2019). Irradiation-induced deep level defects in β-Ga2O3 .
  • Bazioti, Kalliopi; Olsen, Vegard Skiftestad; Azarov, Alexander; Kuznetsov, Andrej; Vines, Lasse & Prytz, Øystein (2019). Defect formation and thermal evolution in ZnO-based structures (Highlight talk).
  • Frodason, Ymir Kalmann; Johansen, Klaus Magnus H; Galeckas, Augustinas & Vines, Lasse (2019). Optical properties of donor-complexed Li_Zn in ZnO .
  • Vasquez, Geraldo Cristian; Bazioti, Kalliopi; Galeckas, Augustinas; Johansen, Klaus Magnus H; Granerød, Cecilie Skjold & Nguyen, Phuong Dan [Vis alle 8 forfattere av denne artikkelen] (2019). Luminescent properties of Zn2GeO4 nanoparticles embedded in ZnO.
  • Vasquez, Geraldo Cristian; Galeckas, Augustinas; Johansen, Klaus Magnus H; Vines, Lasse & Svensson, Bengt Gunnar (2019). Optical and electrical properties of single ion-tracks in crystalline SiC.
  • Abad, Sara; Prados, Alicia; Muñoz-Noval, Alvaro; Vasquez, Geraldo Cristian; Vines, Lasse & Ranchal, Rocío (2019). Use of electrodeposition and thermal oxidation for the synthesis of Ga-Fe-O thin films.
  • Nguyen, Phuong Dan; Granerød, Cecilie Skjold; Aarseth, Bjørn Lupton; Bazioti, Kalliopi; Azarov, Alexander & Svensson, Bengt Gunnar [Vis alle 8 forfattere av denne artikkelen] (2019). Structural and optical properties of individual Zn2GeO4 particles embedded in ZnO.
  • Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Müting, Johanna; Ayedh, Hussein Mohammed Hussein; Grossner, Ulrike & Coutinho, J [Vis alle 7 forfattere av denne artikkelen] (2019). Electrical enhancement and switching of single-photon emission from the silicon vacancy in 4H-SiC.
  • Enga, Marius Johan; Vines, Lasse & Bathen, Marianne Etzelmüller (2021). Exploring Defects in Silicon Carbide for Quantum Technologies; A Density Functional Theory Study. Universitetet i Oslo, Det matematisk-naturvitenskapelige fakultet.
  • Krzyzaniak, Patryk Piotr & Vines, Lasse (2021). Development of β-Ga2O3 as a novel material for power electronics, dopant diffusion and defect interaction. Universitetet i Oslo, Det matematisk-naturvitenskapelige fakultet.
  • Selnesaunet, Gard Momrak; Vines, Lasse & Bathen, Marianne Etzelmüller (2021). Nanostructuring of SiC for novel defect-based quantum technologies. Universitetet i Oslo, Det matematisk-naturvitenskapelige fakultet.
  • Isaksen, Ranvei Dahl & Vines, Lasse (2021). IR- og dataanalyse for feildeteksjon og diagnostisering av solcellemoduler. Universitetet i Oslo, Det matematisk-naturvitenskapelige fakultet.
  • Øversjøen, Vetle; Vines, Lasse & Olsen, Vegard Skiftestad (2021). Development of Earth Abundant ZnSnN2 for Solar Cell Applications. Universitetet i Oslo, Det matematisk-naturvitenskapelige fakultet.
  • Krzyzaniak, Patryk Piotr; Vines, Lasse & Johansen, Klaus Magnus H (2021). Development of b-Ga2O3 as a novel material for power electronics, dopant diffusion and defect interaction. UiO.
  • Verhoeven, Espen Førdestrøm & Vines, Lasse (2020). Determining Hydrogen's influence on electrically active defects in β - Ga2O3. Kjemisk Institutt, Universitetet i Oslo.
  • Sødahl, Elin Dypvik; Bergum, Kristin & Vines, Lasse (2020). HiPIMS deposition and characterization of amorphous ZnOxNy for solar cell applications. Kjemisk Institutt, Universitetet i Oslo.
  • Jubskås, Eirik Koch; Vines, Lasse & Haug, Hallvard (2020). Al2O3 Layers Deposited by Atomic Layer Deposition for Surface Passivation and Passivated Contacts in High Efficiency Silicon Based Solar Cells. Kjemisk Institutt, Universitetet i Oslo.
  • Ormann, Brage Otto; Norby, Truls Eivind & Vines, Lasse (2020). Stable oxide p-n heterojunctions -- NiO-ZnO based transistor. Kjemisk Institutt, Universitetet i Oslo.
  • James, Roystan; Norby, Truls Eivind; Vines, Lasse & Bjørheim, Tor Svendsen (2020). Electrical properties of La2CuO4 and Nd2CuO4 and their coexistent p-n heterojunction. Kjemisk Institutt, Universitetet i Oslo.
  • Reinertsen, Vilde Mari & Vines, Lasse (2019). Diffusion of deuterium in crystalline beta-Ga2O3. Fysisk institutt, Universitetet i Oslo.
  • Stulen, Fredrik Arnesen; Vines, Lasse & Grini, Sigbjørn (2019). Mot en 2-Terminal Cu2Zn(Sn,Ge)S4-på-Si Tandem Solcelle. Fysisk institutt, Universitetet i Oslo.

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Publisert 4. nov. 2010 12:42 - Sist endret 1. sep. 2020 15:37

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