Lasse Vines

Professor - Halvlederfysikk
Bilde av Lasse Vines
English version of this page
Telefon +47 22840940
Brukernavn
Besøksadresse MiNa-Lab Gaustadalleen 23c 0373 Oslo
Postadresse Postboks 1048 Blindern 0316 Oslo

Faglige interesser

  • Halvlederfysikk og materialfysikk i bulk, tynne filmer og nanostrukturer, med anvendelser relatert til nye solcellematerialer, kraftelektronikk og kvanteteknologi.
  • Punkt defekter, doping og diffusjon i halvledere. 

Bakgrunn

  • 2018  -              :  Professor ved seksjon for halvlederfysikk, Fysisk Institutt/Senter for Materialvitenskap og Nanoteknologi
  • 2013  - 2018     :  1. Amanuensis ved Gruppe for halvlederfysikk, Fysisk Institutt/Senter for Materialvitenskap og Nanoteknologi
  • 2008  -  2013    :  Post Doc ved Gruppe for halvlederfysikk, Fysisk Institutt/Senter for Materialvitenskap og Nanoteknologi
  • 2004  -  2008    :  PhD ved Gruppe for halvlederfysikk, Fysisk Institutt/Senter for Materialvitenskap og Nanoteknologi
  • 2001  - 2004: Forsker ved Forsvarets forskningsinstitutt
  • 1996  - 2001: Bsc/Msc ved NTNU (Fysikk og Matematikk)
Emneord: Halvledere, Punkt defekter, Diffusjon, SIMS, DLTS, SPM, SMN, LENS, Halvlederfysikk

Publikasjoner

  • Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Galeckas, Augustinas; Kumar, Piyush; Kuznetsov, Andrej & Grossner, Ulrike [Vis alle 7 forfattere av denne artikkelen] (2024). Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime. Materials Science in Semiconductor Processing. ISSN 1369-8001. 176. doi: 10.1016/j.mssp.2024.108316.
  • Samperi, Orazio; Vines, Lasse; Bertolini, Mario Pietro; Cantiano, Massimiliano; Coffa, Salvo & Fragalà, Maria Elena (2024). Hydrogen depth profiling and multi-energy proton implantation: SIMS as a tool for implant process control. Materials Science in Semiconductor Processing. ISSN 1369-8001. 174. doi: 10.1016/j.mssp.2024.108219.
  • Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Galeckas, Augustinas; Vines, Lasse & Johansen, Klaus Magnus H (2024). Broad luminescence from Zn acceptors in Zn doped β-Ga<inf>2</inf>O<inf>3</inf>. APL Materials. ISSN 2166-532X. 12(2). doi: 10.1063/5.0190156.
  • Linnarsson, Margareta; Vines, Lasse & Hallen, Anders (2023). Al Implantation in SiC; Where Will the Ions Come to Rest? Solid State Phenomena. ISSN 1012-0394. 343, s. 57–64. doi: 10.4028/p-nxe4cz. Fulltekst i vitenarkiv
  • Serra, Filipe; Gaspar, Guilherme; Viana, Ana; Arumughan, Jayaprasad; Costa, Ivo & Pêra, David [Vis alle 10 forfattere av denne artikkelen] (2023). Gas immersion laser doping: N++ phosphorus doping on p+ Cz-Si wafers with a highly doped p++ emitter. AIP Conference Proceedings. ISSN 0094-243X. 2826. doi: 10.1063/5.0140455.
  • Seyidov, Palvan; Varley, Joel B.; Frodason, Ymir Kalmann; Klimm, Detlef; Vines, Lasse & Galazka, Zbigniew [Vis alle 10 forfattere av denne artikkelen] (2023). Thermal Stability of Schottky Contacts and Rearrangement of Defects in β-Ga2O3 Crystals. Advanced Electronic Materials. ISSN 2199-160X. doi: 10.1002/aelm.202300428. Fulltekst i vitenarkiv
  • Azarov, Alexander; García Fernández, Javier; Zhao, Junlei; Djurabekova, Flyura; He, Huan & He, Ru [Vis alle 13 forfattere av denne artikkelen] (2023). Universal radiation tolerant semiconductor. Nature Communications. ISSN 2041-1723. 14, s. 1–8. doi: 10.1038/s41467-023-40588-0. Fulltekst i vitenarkiv
  • Langørgen, Amanda; Frodason, Ymir Kalmann; Karsthof, Robert Michael; Von Wenckstern, Holger; Jensen, Ingvild Julie Thue & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2023). Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy. Journal of Applied Physics. ISSN 0021-8979. 134(1), s. 015701-1–015701-6. doi: 10.1063/5.0150994. Fulltekst i vitenarkiv
  • Saxegaard, Kjetil Karlsen; Monakhov, Eduard; Vines, Lasse & Bergum, Kristin (2023). Characteristics of ZnON films and heterojunction diodes with varying O:N ratios. Thin Solid Films. ISSN 0040-6090. 782. doi: 10.1016/j.tsf.2023.139968. Fulltekst i vitenarkiv
  • Bathen, Marianne Etzelmüller; Selnesaunet, Gard Momrak; Enga, Marius; Kjeldby, Snorre Braathen; Müting, Johanna & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2023). Charge State Control Over Point Defects in SiC Devices. Defect and Diffusion Forum. ISSN 1012-0386. 425, s. 35–42. doi: 10.4028/p-6ho92o. Fulltekst i vitenarkiv
  • Wang, Xingyi; Zimmermann, Christian; Titze, Michael; Niaouris, Vasileios; Hansen, Ethan R. & D'Ambrosia, Samuel H. [Vis alle 9 forfattere av denne artikkelen] (2023). Properties of Donor Qubits in ZnO Formed by Indium-Ion Implantation. Physical Review Applied. ISSN 2331-7019. 19(5), s. 054090-1–054090-12. doi: 10.1103/PhysRevApplied.19.054090.
  • Frodason, Ymir Kalmann; Krzyzaniak, Patryk Piotr; Vines, Lasse; Varley, Joel Basile; Van De Walle, Chris G. & Johansen, Klaus Magnus H (2023). Diffusion of Sn donors in β-Ga2O3. APL Materials. ISSN 2166-532X. 11(4), s. 041121-1–041121-8. doi: 10.1063/5.0142671. Fulltekst i vitenarkiv
  • Bugten, Andreas Voll; Michels Brito Miranda, Leander Edward; Brurok, Rune Botnmark; Hartung, Cathrine; Ott, Emmanuelle & Vines, Lasse [Vis alle 9 forfattere av denne artikkelen] (2023). The Role of Boron in Low Copper Spheroidal Graphite Irons. Metallurgical and Materials Transactions A. ISSN 1073-5623. 54, s. 2539–2553. doi: 10.1007/s11661-023-07014-y. Fulltekst i vitenarkiv
  • Polyakov, A.Y.; Kochkova, A.I.; Langørgen, Amanda; Vines, Lasse; Vasilev, A. & Shchemerov, I.V. [Vis alle 8 forfattere av denne artikkelen] (2023). On the possible nature of deep centers in Ga2O3. Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. ISSN 0734-2101. 41(2), s. 023401-1–023401-6. doi: 10.1116/6.0002307. Fulltekst i vitenarkiv
  • Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2023). Trap-limited diffusion of Zn in β-Ga2 O3. PHYSICAL REVIEW MATERIALS. ISSN 2475-9953. 7(3), s. 1–8. doi: 10.1103/PhysRevMaterials.7.035401. Fulltekst i vitenarkiv
  • Kjeldby, Snorre Braathen; Nguyen, Phuong Dan; García Fernández, Javier; Haug, Kristian; Galeckas, Augustinas & Jensen, Ingvild Julie Thue [Vis alle 9 forfattere av denne artikkelen] (2023). Optical properties of ZnFe2O4 nanoparticles and Fe-decorated inversion domain boundaries in ZnO. Nanoscale Advances. 5(7), s. 2102–2110. doi: 10.1039/d2na00849a.
  • Ghezellou, Misagh; Kumar, Piyush; Bathen, Marianne E.; Karsthof, Robert Michael; Sveinbjörnsson, Einar Ö. & Grossner, Ulrike [Vis alle 9 forfattere av denne artikkelen] (2023). The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers. APL Materials. ISSN 2166-532X. 11(3). doi: 10.1063/5.0142415. Fulltekst i vitenarkiv
  • Frodason, Ymir Kalmann; Varley, Joel B.; Johansen, Klaus Magnus H; Vines, Lasse & Van De Walle, Chris G. (2023). Migration of Ga vacancies and interstitials in β-Ga2 O3. Physical review B (PRB). ISSN 2469-9950. 107(2), s. 024109-1–024109-9. doi: 10.1103/PhysRevB.107.024109. Fulltekst i vitenarkiv
  • Borgersen, Jon; Karsthof, Robert Michael; Rønning, Vegard; Vines, Lasse; Von Wenckstern, Holger & Grundmann, Marius [Vis alle 8 forfattere av denne artikkelen] (2023). Origin of enhanced conductivity in low dose ion irradiated oxides. AIP Advances. ISSN 2158-3226. 13(1), s. 015211-1–015211-5. doi: 10.1063/5.0134699. Fulltekst i vitenarkiv
  • Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Grossner, Ulrike & Vines, Lasse (2022). Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC. Materials Science Forum. ISSN 0255-5476. 1062, s. 371–375. doi: 10.4028/p-ryui6b. Fulltekst i vitenarkiv
  • Olsen, Vegard Skiftestad; Frodason, Ymir Kalmann; Hommedal, Ylva Knausgård; Nielsen, Dina Marie; Weiser, Philip Michael & Johansen, Klaus Magnus H [Vis alle 9 forfattere av denne artikkelen] (2022). Li and group-III impurity doping in ZnSnN2: Potential and limitations. PHYSICAL REVIEW MATERIALS. ISSN 2475-9953. 6(12), s. 1–8. doi: 10.1103/PhysRevMaterials.6.124602. Fulltekst i vitenarkiv
  • Galeckas, Augustinas; Karsthof, Robert Michael; Kingsly, Gana; Kok, Angela; Bathen, Marianne Etzelmüller & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2022). Cross-Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations. Physica Status Solidi (a) applications and materials science. ISSN 1862-6300. s. 1–7. doi: 10.1002/pssa.202200449. Fulltekst i vitenarkiv
  • Garcia Fernandez, Javier; Kjeldby, Snorre Braathen; Nguyen, Phuong Dan; Karlsen, Ole Bjørn; Vines, Lasse & Prytz, Øystein (2022). Formation of γ-Ga2O3 by ion implantation: Polymorphic phase transformation of β-Ga2O3. Applied Physics Letters. ISSN 0003-6951. 121(19). doi: 10.1063/5.0120103. Fulltekst i vitenarkiv
  • Hebnes, Oliver Lerstøl; Bathen, Marianne Etzelmüller; Schøyen, Øyvind Sigmundson; Winther-Larsen, Sebastian Gregorius; Vines, Lasse & Hjorth-Jensen, Morten (2022). Predicting solid state material platforms for quantum technologies. npj Computational Materials. ISSN 2057-3960. 8(1). doi: 10.1038/s41524-022-00888-3. Fulltekst i vitenarkiv
  • Assar, Alireza; Martinho, Filipe; Larsen, Jes; Saini, Nishant; Shearer, Denver & Moro, Marcos V. [Vis alle 15 forfattere av denne artikkelen] (2022). Gettering in polySi/SiO xpassivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience. ACS Applied Materials & Interfaces. ISSN 1944-8244. 14(12), s. 14342–14358. doi: 10.1021/acsami.2c00319. Fulltekst i vitenarkiv
  • Kjeldby, Snorre Braathen; Azarov, Alexander; Nguyen, Phuong Dan; Venkatachalapathy, Vishnukanthan; Mikšová, R. & MacKová, A. [Vis alle 9 forfattere av denne artikkelen] (2022). Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide. Journal of Applied Physics. ISSN 0021-8979. 131(12). doi: 10.1063/5.0083858. Fulltekst i vitenarkiv
  • Langørgen, Amanda; Zimmermann, Christian; Frodason, Ymir Kalmann; Verhoeven, Espen Førdestrøm; Weiser, Philip Michael & Karsthof, Robert Michael [Vis alle 8 forfattere av denne artikkelen] (2022). Influence of heat treatments in H2 and Ar on the E1 center in β-Ga2O3. Journal of Applied Physics. ISSN 0021-8979. 131(115702). doi: 10.1063/5.0083861. Fulltekst i vitenarkiv
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Kuznetsov, Andrej & Vines, Lasse (2022). Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 131. doi: 10.1063/5.0077308. Fulltekst i vitenarkiv
  • Müting, Johanna; Bobal, Viktor; Vines, Lasse & Grossner, Ulrike (2021). Phosphorus implantation into 4H-SiC at room and elevated temperature. Semiconductor Science and Technology. ISSN 0268-1242. 36(6). doi: 10.1088/1361-6641/abf55a.
  • Alfieri, Giovanni; Mihaila, Andrei; Godignon, P.; Varley, Joel Basile & Vines, Lasse (2021). Deep level study of chlorine-based dry etched beta - Ga2O3. Journal of Applied Physics. ISSN 0021-8979. 130(2). doi: 10.1063/5.0050416.
  • Duan, Juanmei; Wang, Changan; Vines, Lasse; Rebohle, Lars; Helm, Manfred & Zeng, Yu-Jia [Vis alle 8 forfattere av denne artikkelen] (2021). Increased dephasing length in heavily doped GaAs. New Journal of Physics. ISSN 1367-2630. 23(8). doi: 10.1088/1367-2630/ac1a98.
  • Linnarsson, Margareta; Vines, Lasse & Hallen, Anders (2021). Influence from the electronic shell structure on the range distribution during channeling of 40-300 keV ions in 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 130(7). doi: 10.1063/5.0054188.
  • Borgersen, Jon; Johansen, Klaus Magnus H; Vines, Lasse; Wenckstern, Holger von; Grundmann, Marius & Kuznetsov, Andrej (2021). Fermi level controlled point defect balance in ion irradiated indium oxide. Journal of Applied Physics. ISSN 0021-8979. 130(8). doi: 10.1063/5.0062135. Fulltekst i vitenarkiv
  • Bonkerud, Julie; Zimmermann, Christian; Weiser, Philip Michael; Vines, Lasse & Monakhov, Eduard (2021). On the permittivity of titanium dioxide. Scientific Reports. ISSN 2045-2322. 11. doi: 10.1038/s41598-021-92021-5. Fulltekst i vitenarkiv
  • Lavrov, E.V.; Chaplygin, I.; Herklotz, F.; Melnikov, V.V.; Kutin, Y. & Vines, Lasse (2021). Dominant hydrogen complex in natural anatase TiO2. Journal of Applied Physics. ISSN 0021-8979. 130(14). doi: 10.1063/5.0067495. Fulltekst i vitenarkiv
  • Azarov, Alexander; Venkatachalapathy, Vishnukanthan; Vines, Lasse; Monakhov, Eduard; Lee, In-Hwan & Kuznetsov, Andrej (2021). Activation energy of silicon diffusion in gallium oxide: Roles of the mediating defects charge states and phase modification. Applied Physics Letters. ISSN 0003-6951. 119(18). doi: 10.1063/5.0070045. Fulltekst i vitenarkiv

Se alle arbeider i Cristin

  • Bathen, Marianne Etzelmüller; Olsen, Vegard Skiftestad & Vines, Lasse (2024). Hvor går veien? Kvanteteknologiens potensiale i fremtidens teknologi​. .
  • Bathen, Marianne Etzelmüller; Hebnes, Oliver Lerstøl; Schøyen, Øyvind; Winther-Larsen, Sebastian G.; Vines, Lasse & Hjorth-Jensen, Morten (2024). Predicting solid state material platforms for quantum technologies .
  • Bathen, Marianne Etzelmüller & Vines, Lasse (2024). Semiconductors as quantum materials - Ongoing research at the LENS group.
  • Ousdal, Erlend Lemva; Bathen, Marianne Etzelmüller & Vines, Lasse (2023). Controlling directionality of emission from quantum defects through microstructures in Silicon Carbide .
  • Ousdal, Erlend Lemva; Bathen, Marianne Etzelmüller & Vines, Lasse (2023). Optical and electrical characterization of potential single photon emitters in 6H silicon carbide .
  • Bathen, Marianne Etzelmüller & Vines, Lasse (2023). Point defects in semiconductors for quantum technologies​ ​ Ongoing research at ​ the University of Oslo​.
  • Bathen, Marianne Etzelmüller & Vines, Lasse (2023). Studieretning i kvanteteknologi​.
  • Bathen, Marianne Etzelmüller; Kumar, Piyush; Ghezellou, Misagh; Belanche, Manuel; Vines, Lasse & Ul-Hassan, Jawad [Vis alle 7 forfattere av denne artikkelen] (2023). Dual configuration of shallow acceptor levels in 4H-SiC.
  • Bathen, Marianne Etzelmüller; Razinkovas, Lukas; Linderälv, Christopher; Vines, Lasse & Grossner, Ulrike (2023). Quantum pressure sensing using the vibronic spectrum of color centers .
  • Bathen, Marianne Etzelmüller; Johnson, Brett C.; Galeckas, Augustinas; martins, maria m; Kumar, Piyush & Silkinis, Rokas [Vis alle 11 forfattere av denne artikkelen] (2023). Doping-induced color centers in silicon carbide ​.
  • Langørgen, Amanda; Frodason, Ymir Kalmann; Julie Thue Jensen, Ingvild & Vines, Lasse (2023). A metastable deep defect in beta-Ga2O3.
  • Kjeldby, Snorre Braathen; García Fernández, Javier; Nguyen, Phuong Dan; Prytz, Øystein & Vines, Lasse (2023). Implantation for polymorphic transformation in Ga2O3: thermal evolution and luminescence.
  • Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2023). Ge donor diffusion in β-Ga2O3.
  • Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2023). Impurity diffusion in β-Ga2O3.
  • Saxegaard, Kjetil Karlsen; Bergum, Kristin; Vines, Lasse & Monakhov, Eduard (2023). The effect of annealing on opto-electronic properties of ZnON films.
  • Garcia Fernandez, Javier; Kjeldby, Snorre Braathen; Nguyen, Phuong Dan; Haug, Kristian; Galeckas, Augustinas & Jensen, Ingvild Julie Thue [Vis alle 9 forfattere av denne artikkelen] (2023). Optical properties and structure relationship in ZnO:Fe with inversion domain boundaries and ZnFe2O4/ZnO heterostructures.
  • Garcia Fernandez, Javier; Kjeldby, Snorre Braathen; Azarov, Alexander; Pokle, Anuj; Nguyen, Phuong Dan & Vines, Lasse [Vis alle 8 forfattere av denne artikkelen] (2023). Polymorph engineering and radiation tolerance in β-Ga2O3.
  • Monakhov, Eduard; Bergum, Kristin; Vines, Lasse & Saxegaard, Kjetil Karlsen (2023). The UiO semiconductor group: Towards tandems with ZnON.
  • Saxegaard, Kjetil Karlsen; Monakhov, Eduard; Vines, Lasse & Bergum, Kristin (2023). The effect of annealing on ZnON intended for solar cell applications.
  • Bathen, Marianne Etzelmüller; Enga, Marius Johan; Selnesaunet, Gard Momrak; Kjeldby, Snorre Braathen; Galeckas, Augustinas & Müting, Johanna [Vis alle 8 forfattere av denne artikkelen] (2022). Charge state control over point defects in SiC devices.
  • Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Kumar, Piyush; Galeckas, Augustinas; Kuznetsov, Andrej & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2022). Impact of C-injection in 4H-SiC on defect distribution and minority carrier lifetime.
  • Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Kumar, Piyush; Galeckas, Augustinas; Kuznetsov, Andrej Yu. & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2022). Impact of C-injection in SiC on defect distribution and minority carrier lifetime.
  • Bathen, Marianne Etzelmüller; Hebnes, Oliver Lerstøl; Schøyen, Øyvind Sigmundson; Winther-Larsen, Sebastian Gregorius; Vines, Lasse & Hjorth-Jensen, Morten (2022). Predicting Solid State Material Platforms for Quantum Technologies.
  • Bergum, Kristin; Monakhov, Eduard & Vines, Lasse (2022). The effect of oxygen and nitrogen concentrations on Opto-electronic properties of ZnOxNy films .
  • Langørgen, Amanda; Frodason, Ymir Kalmann; Karsthof, Robert Michael; Wenckstern, Holger von; Thue Jensen, Ingvild & Vines, Lasse (2022). An electron trap in κ-Ga2O3 and the quest for its microscopic origin.
  • Bergum, Kristin; Monakhov, Eduard & Vines, Lasse (2022). The effect of oxygen and nitrogen concentrations on ZnON films.
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2022). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
  • Karlsen, Kjetil; Bergum, Kristin; Monakhov, Eduard & Vines, Lasse (2022). The effect of oxygen and nitrogen concentrations on Opto-electronic properties of ZnOxNy films.
  • Karlsen, Kjetil; Bergum, Kristin; Monakhov, Eduard & Vines, Lasse (2022). The effect of oxygen and nitrogen concentrations on Opto-electronic properties of ZnON films.
  • Karlsen, Kjetil; Bergum, Kristin; Monakhov, Eduard & Vines, Lasse (2022). The effect of oxygen and nitrogen concentrations on Opto-electronic properties of ZnON films.
  • Karlsen, Kjetil; Bergum, Kristin; Monakhov, Eduard & Vines, Lasse (2022). Electronic properties and dominant levels in ZnON.
  • Bergum, Kristin; Monakhov, Eduard & Vines, Lasse (2022). The effect of oxygen and nitrogen concentrations on Opto-electronic properties of ZnON films.
  • Saxegaard, Kjetil Karlsen; Bergum, Kristin; Monakhov, Eduard & Vines, Lasse (2022). The effect of oxygen and nitrogen concentrations on Opto-electronic properties of ZnON films.
  • Vines, Lasse; Monakhov, Eduard & Kuznetsov, Andrej (2022). Defects in semiconductors. Journal of Applied Physics. ISSN 0021-8979. 132(15). doi: 10.1063/5.0127714. Fulltekst i vitenarkiv
  • Galeckas, Augustinas; Karsthof, Robert Michael; Gana, Kingsly; Kok, Angela; Bathen, Marianne Etzelmüller & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2022). Cross-sectional carrier lifetime profiling and deep level monitoring in silicon carbide films exhibiting variable carbon vacancy concentrations.
  • Kjeldby, Snorre Braathen; Azarov, Alexander; Nguyen, Phuong Dan; Garcia Fernandez, Javier; Venkatachalapathy, Vishnukanthan & Mikšová, Romana [Vis alle 10 forfattere av denne artikkelen] (2022). Structure and luminescence properties of Si-implanted β-Ga2O3.
  • Kjeldby, Snorre Braathen; Azarov, Alexander; Nguyen, Phuong Dan; Venkatachalapathy, Vishnukanthan; Mikšová, Romana & Macková, Anna [Vis alle 10 forfattere av denne artikkelen] (2022). Structural Transformation of β-Ga2O3 through Si-implantation.
  • Kjeldby, Snorre Braathen; Nguyen, Phuong Dan; Garcia Fernandez, Javier; Haug, Kristian; Galeckas, Augustinas & Jensen, Ingvild Julie Thue [Vis alle 9 forfattere av denne artikkelen] (2022). Optical properties of Fe-decorated inversion domain boundaries and embedded spinel zinc ferrite nanoparticles in zinc oxide.
  • Garcia Fernandez, Javier; Kjeldby, Snorre Braathen; Nguyen, Phuong Dan; Haug, Kristian; Galeckas, Augustinas & Jensen, Ingvild Julie Thue [Vis alle 9 forfattere av denne artikkelen] (2022). Structural and optical investigation of Fe-ZnO nanoarchitectures: from inversion domain boundaries to ZnO/ZnFe2O4 heterostructure.
  • Frodason, Ymir Kalmann; Krzyzaniak, Patryk Piotr; Vines, Lasse; Varley, Joel Basile; Van de Walle, Chris G. & Johansen, Klaus Magnus H (2022). Ga vacancy-mediated diffusion of Sn donors in β-Ga2O3.
  • Frodason, Ymir Kalmann; Varley, Joel Basile; Johansen, Klaus Magnus H; Vines, Lasse & Van de Walle, Chris G. (2022). Strongly anisotropic migration of the Ga vacancy in ß-Ga2O3.
  • Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2022). Dynamic interaction of Zn and intrinsic defects in beta-Ga2O3.
  • Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2022). Diffusion of Zn in beta-Ga2O3.
  • Norby, Truls; Karsthof, Robert Michael; Saeed, Sarmad Waheed; Kuznetsov, Andrej & Vines, Lasse (2022). The p-n junction has nothing to do with ionics. Does it? .
  • Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2022). Zn diffusion in 𝛽-Ga2O3 using SIMS.
  • Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Linnarsson, Margareta; Galeckas, Augustinas; Kuznetsov, Andrej & Grossner, Ulrike [Vis alle 7 forfattere av denne artikkelen] (2021). Stability, evolution and diffusion of intrinsic point defects in 4H-SiC.
  • Karlsen, Kjetil; Monakhov, Eduard; Vines, Lasse & Bergum, Kristin (2021). Electronic properties and the dominant levels in ZnON.
  • Bergum, Kristin; Vines, Lasse & Monakhov, Eduard (2021). Electronic properties and the dominant levels in ZnON.
  • Lavrov, E.V.; Chaplygin, I.; Herklotz, Frank; Melnikov, V.V.; Kutin, Y. & Vines, Lasse (2021). Publisher's note: Dominant hydrogen complex in natural anatase TiO2 (J. Appl. Phys. (2021) 130 (145701) DOI: 10.1063/5.0067495). Journal of Applied Physics. ISSN 0021-8979. 130(21). doi: 10.1063/5.0078788.
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas & Vines, Lasse (2021). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
  • Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Galeckas, Augustinas; Enga, Marius & Vines, Lasse (2021). Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC.
  • Olsen, Vegard Skiftestad; Øversjøen, Vetle; Frodason, Ymir Kalmann; Cooil, Simon; Lee, In-Hwan & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2021). Electrical control in ZnSnN2 by tailoring intrinsic and extrinsic defects.
  • Karlsen, Kjetil; Monakhov, Eduard; Bergum, Kristin; Vines, Lasse & Thue Jensen, Ingvild (2021). Electronic properties and dominant levels in ZnON.
  • Bazioti, Kalliopi; Olsen, Vegard Skiftestad; Azarov, Alexander; Johansen, Klaus Magnus H; Kuznetsov, Andrej & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2021). Thermal evolution of point and extended defects in N-implanted ZnO and (ZnO)1−x(GaN)x thin films: STEM-EELS investigations.
  • Zimmermann, Christian; Frodason, Ymir Kalmann; Varley, Joel Basile; Verhoeven, Espen Førdestrøm; Rønning, Vegard & Weiser, Philip Michael [Vis alle 15 forfattere av denne artikkelen] (2021). Identification of Fe-, Ti- and H-related Charge-state Transition Levels in β-Ga2O3.
  • Skaar, Lars Kristian Gretland; Vines, Lasse & Rivas Gongora, David (2023). Formation of W-, C- and G-centers in silicon; towards single photon emitters. Kjemisk Institutt.
  • Pedersen, Benedicte Allum; Vines, Lasse; Kjeldby, Snorre Braathen & Reinertsen, Vilde Mari (2022). Positioning and control of single-photon emitters in SiC-based nanostructures for quantum applications. Universitetet i Oslo.
  • Vigneswaran, Nirun; Vines, Lasse & Olsen, Vegard Skiftestad (2022). Deponering og karakterisering av polykrystallinsk SnO for solcelle applikasjoner. Universitetet i Oslo.
  • Enga, Marius Johan; Vines, Lasse & Bathen, Marianne Etzelmüller (2021). Exploring Defects in Silicon Carbide for Quantum Technologies; A Density Functional Theory Study. Universitetet i Oslo.
  • Selnesaunet, Gard Momrak; Vines, Lasse & Bathen, Marianne Etzelmüller (2021). Nanostructuring of SiC for novel defect-based quantum technologies. Universitetet i Oslo.
  • Øversjøen, Vetle; Vines, Lasse & Olsen, Vegard Skiftestad (2021). Development of Earth Abundant ZnSnN2 for Solar Cell Applications. Universitetet i Oslo.
  • Krzyzaniak, Patryk Piotr; Vines, Lasse & Johansen, Klaus Magnus H (2021). Development of b-Ga2O3 as a novel material for power electronics, dopant diffusion and defect interaction. 7Letras.

Se alle arbeider i Cristin

Publisert 4. nov. 2010 12:42 - Sist endret 15. sep. 2023 14:47