QUantum emitters in semiconductors for future TEchnologies (QuTe)

• Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Galeckas, Augustinas; Kumar, Piyush; Kuznetsov, Andrej & Grossner, Ulrike [Vis alle 7 forfattere av denne artikkelen] (2024). Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime. Materials Science in Semiconductor Processing. ISSN 1369-8001. 176. doi: 10.1016/j.mssp.2024.108316. Fulltekst i vitenarkiv
• Bathen, Marianne Etzelmüller; Kumar, Piyush; Ghezellou, Misagh; Belanche, Manuel; Vines, Lasse & Ul-Hassan, Jawad [Vis alle 7 forfattere av denne artikkelen] (2024). Dual configuration of shallow acceptor levels in 4H-SiC. Materials Science in Semiconductor Processing. ISSN 1369-8001. 177. doi: 10.1016/j.mssp.2024.108360. Fulltekst i vitenarkiv
• Kumar, Piyush; Martins, Maria M.; Bathen, Marianne Etzelmüller; Woerle, Judith; Prokscha, Thomas & Grossner, Ulrike (2023). Investigation of the SiO2-SiC Interface Using Low-Energy Muon-Spin-Rotation Spectroscopy. Physical Review Applied. ISSN 2331-7019. 19. doi: 10.1103/PhysRevApplied.19.054025.
• Kumar, Piyush; Belanche, Manuel; Für, Natalija; Guzenko, Luka; Woerle, Judith & Bathen, Marianne Etzelmüller [Vis alle 7 forfattere av denne artikkelen] (2023). Energy-Dependent Impact of Proton Irradiation on 4H-SiC Schottky Diodes. Materials Science Forum. ISSN 0255-5476. 1092, s. 187–192. doi: 10.4028/p-0y444y.
• Dorfer, Christian; Bathen, Marianne Etzelmüller; Race, Salvatore; Kumar, Piyush; Tsibizov, Alexander & Woerle, Judith [Vis alle 7 forfattere av denne artikkelen] (2023). Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique . Applied Physics Letters. ISSN 0003-6951. 122. doi: 10.1063/5.0142217.
• Für, Natalija; Belanche, Manuel; Martinella, Corinna; Kumar, Piyush; Bathen, Marianne Etzelmüller & Grossner, Ulrike (2023). Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation. IEEE Transactions on Nuclear Science. ISSN 0018-9499. 70(8), s. 1892–1899. doi: 10.1109/TNS.2023.3242760.
• Ghezellou, Misagh; Kumar, Piyush; Bathen, Marianne E.; Karsthof, Robert Michael; Sveinbjörnsson, Einar Ö. & Grossner, Ulrike [Vis alle 9 forfattere av denne artikkelen] (2023). The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers. APL Materials. ISSN 2166-532X. 11(3). doi: 10.1063/5.0142415. Fulltekst i vitenarkiv
• Linnarsson, Margareta; Vines, Lasse & Hallen, Anders (2023). Al Implantation in SiC; Where Will the Ions Come to Rest? Solid State Phenomena. ISSN 1012-0394. 343, s. 57–64. doi: 10.4028/p-nxe4cz. Fulltekst i vitenarkiv
• Serra, Filipe; Gaspar, Guilherme; Viana, Ana; Arumughan, Jayaprasad; Costa, Ivo & Pêra, David [Vis alle 10 forfattere av denne artikkelen] (2023). Gas immersion laser doping: N++ phosphorus doping on p+ Cz-Si wafers with a highly doped p++ emitter. AIP Conference Proceedings. ISSN 0094-243X. 2826. doi: 10.1063/5.0140455.
• Wang, Xingyi; Zimmermann, Christian; Titze, Michael; Niaouris, Vasileios; Hansen, Ethan R. & D'Ambrosia, Samuel H. [Vis alle 9 forfattere av denne artikkelen] (2023). Properties of Donor Qubits in ZnO Formed by Indium-Ion Implantation. Physical Review Applied. ISSN 2331-7019. 19(5), s. 054090-1–054090-12. doi: 10.1103/PhysRevApplied.19.054090. Fulltekst i vitenarkiv Vis sammendrag

  Neutral shallow donors (D0) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here we report on the formation of D0 in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with those of in situ–doped donors. The inhomogeneous linewidth of the donor-bound-exciton transition is less than 10 GHz, comparable to the optical linewidth of in situ In. Longitudinal spin relaxation times (T1) exceed reported values for in situ Ga donors, indicating that residual In-implantation damage does not degrade T1. Two-laser Raman spectroscopy of the donor spin reveals the hyperfine interaction of the donor electron with the spin-9/2 In nuclei. This work is an important step toward the deterministic formation of In-donor qubits in ZnO with optical access to a long-lived nuclear-spin memory.

• Bathen, Marianne Etzelmüller; Selnesaunet, Gard Momrak; Enga, Marius; Kjeldby, Snorre Braathen; Müting, Johanna & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2023). Charge State Control Over Point Defects in SiC Devices. Defect and Diffusion Forum. ISSN 1012-0386. 425, s. 35–42. doi: 10.4028/p-6ho92o. Fulltekst i vitenarkiv
• Karsthof, Robert Michael; Bathen, Marianne Etzelmüller; Kuznetsov, Andrej & Vines, Lasse (2022). Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC. Journal of Applied Physics. ISSN 0021-8979. 131. doi: 10.1063/5.0077308. Fulltekst i vitenarkiv
• Bathen, Marianne Etzelmüller; Karsthof, Robert Michael; Grossner, Ulrike & Vines, Lasse (2022). Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC. Materials Science Forum. ISSN 0255-5476. 1062, s. 371–375. doi: 10.4028/p-ryui6b. Fulltekst i vitenarkiv
• Galeckas, Augustinas; Karsthof, Robert Michael; Kingsly, Gana; Kok, Angela; Bathen, Marianne Etzelmüller & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2022). Cross-Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations. Physica Status Solidi (a) applications and materials science. ISSN 1862-6300. s. 1–7. doi: 10.1002/pssa.202200449. Fulltekst i vitenarkiv
• Hebnes, Oliver Lerstøl; Bathen, Marianne Etzelmüller; Schøyen, Øyvind Sigmundson; Winther-Larsen, Sebastian Gregorius; Vines, Lasse & Hjorth-Jensen, Morten (2022). Predicting solid state material platforms for quantum technologies. npj Computational Materials. ISSN 2057-3960. 8(1). doi: 10.1038/s41524-022-00888-3. Fulltekst i vitenarkiv
• Assar, Alireza; Martinho, Filipe; Larsen, Jes; Saini, Nishant; Shearer, Denver & Moro, Marcos V. [Vis alle 15 forfattere av denne artikkelen] (2022). Gettering in polySi/SiO xpassivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience. ACS Applied Materials & Interfaces. ISSN 1944-8244. 14(12), s. 14342–14358. doi: 10.1021/acsami.2c00319. Fulltekst i vitenarkiv

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• Bathen, Marianne Etzelmüller; Olsen, Vegard Skiftestad & Vines, Lasse (2024). Hvor går veien? Kvanteteknologiens potensiale i fremtidens teknologi​. .
• Bathen, Marianne Etzelmüller & Vines, Lasse (2024). Semiconductors as quantum materials - Ongoing research at the LENS group.
• Bathen, Marianne Etzelmüller; Hebnes, Oliver Lerstøl; Schøyen, Øyvind; Winther-Larsen, Sebastian G.; Vines, Lasse & Hjorth-Jensen, Morten (2024). Predicting solid state material platforms for quantum technologies .
• Bathen, Marianne Etzelmüller (2024). Hvorfor kvanteteknologi er det mest spennende du kan drive med.
• Bathen, Marianne Etzelmüller (2024). Deltagelse i Abels Tårn. [Radio]. NRK P2.
• Bathen, Marianne Etzelmüller (2024). Hvor går veien? Kvanteteknologiens potensiale i fremtidens teknologi.
• Bathen, Marianne Etzelmüller (2024). Point defects in semiconductors for quantum technologies.
• Bathen, Marianne Etzelmüller & Hjorth-Jensen, Morten (2024). Where are we going? Quantum technology for future applications.
• Bathen, Marianne Etzelmüller (2024). Kvanteteknologiens betydning for samfunnsutviklingen. En ny æra?
• Bathen, Marianne Etzelmüller (2024). Norway’s green quantum future.
• Bathen, Marianne Etzelmüller; Johnson, Brett C.; Galeckas, Augustinas; martins, maria m; Kumar, Piyush & Silkinis, Rokas [Vis alle 11 forfattere av denne artikkelen] (2023). Doping-induced color centers in silicon carbide ​.
• Vines, Lasse; Monakhov, Eduard & Kuznetsov, Andrej (2022). Defects in semiconductors. Journal of Applied Physics. ISSN 0021-8979. 132(15). doi: 10.1063/5.0127714. Fulltekst i vitenarkiv
• Pedersen, Benedicte Allum; Vines, Lasse; Kjeldby, Snorre Braathen & Reinertsen, Vilde Mari (2022). Positioning and control of single-photon emitters in SiC-based nanostructures for quantum applications. Universitetet i Oslo.

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