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Defect control in Gallium Oxide for next gen POWer electronics (GO-POW)

The primary goal of GO-POW is to use advanced first-principles defect modelling in close combination with junction- and optical spectroscopy techniques to accelerate the development of Ga2O3 as a material for power electronics, and as a predictive tool for defect engineering.

About the project

Power electronics is an integral part of all electric systems. It is used to convert electricity between alternating and direct current, and to change between high and low voltage levels. Power electronics is thus a key element in the power grid itself, but also central in providing power, e.g., from solar cells and wind-turbines into the grid. It is also central in charging electric vehicles and the transmission of power from the batteries to the motor. We also find them in all our electric appliances in our homes, like in electric stoves, mobile phones, and computers to mention a few. Thus, power electronics is a key enabler in realizing an electrification of our societies. GO-POW will address the need to understand key and fundamental defects in the material Ga2O3. This is a material with high potential future impact in next-generation power electronics. There are two key benefits: (i) the ability to withstand high electric fields, owing to its ultra-wide electronic band gap and (ii) the possibility to control the electrical conductivity over a wide range. The improved ability to withstand electric fields, opens the possibility to reduce the thickness of the active material, which in turn will reduce the dissipation of heat, permitting devices that are faster, smaller and more energy efficient. However, to realize these possibilities it is critical to improve the knowledge of point defects of this material.

Objectives

The objectives of GO-POW can be divided into two stages: 

  1. To radically increase the understanding of point defects in β-Ga2O3 through a combined effort of advanced first-principles defect modelling and experimental defect spectroscopic techniques. A special focus will be on so-called bi-stable defects, which can be detrimental to device performance, as well as technologically important impurities and dopants. GO-POW aims to characterize and identify electrical and optical defect signatures, and to understand impurity diffusion and the interaction between defects in the material.
  2. The achieved accuracy of the above approach will be used to develop a “sandbox” for defect engineering in β-Ga2O3, and then expand into novel related materials systems.

Sub-projects

The GO-POW project consists of four work scientific packages:

  1. Electrical characterization, identification, and control of bi-stable defects.
  2. Defect origin of the visible broad luminescence bands.
  3. Impurity diffusion and defect interaction.
  4. Defect engineering and novel materials. 

Financing

The project is financed by the Research Council of Norway (no. 314017)

Project period

2021 - 2025

Infrastucture

The project uses the national infrastructure NorFab – The Norwegian Micro- and Nanofabrication Facility at the Micro- and Nanotechnology Lab (MiNaLab)

 

Publications

  • Ney, Verena; Henne, Bastian; de Souza, Mariano; Jantsch, Wolfgang; Johansen, Klaus Magnus Håland & Wilhelm, Fabrice [Show all 8 contributors for this article] (2023). Valence state, lattice incorporation, and resulting magnetic properties of Ni in Zn/Co-based magnetic oxides. Journal of Applied Physics. ISSN 0021-8979. 133(3). doi: 10.1063/5.0130731. Full text in Research Archive
  • Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2023). Trap-limited diffusion of Zn in β-Ga2 O3. PHYSICAL REVIEW MATERIALS. ISSN 2475-9953. 7(3), p. 1–8. doi: 10.1103/PhysRevMaterials.7.035401. Full text in Research Archive
  • Polyakov, A.Y.; Kochkova, A.I.; Langørgen, Amanda; Vines, Lasse; Vasilev, A. & Shchemerov, I.V. [Show all 8 contributors for this article] (2023). On the possible nature of deep centers in Ga2O3. Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. ISSN 0734-2101. 41(2), p. 023401-1–023401-6. doi: 10.1116/6.0002307. Full text in Research Archive
  • Frodason, Ymir Kalmann; Varley, Joel B.; Johansen, Klaus Magnus H; Vines, Lasse & Van De Walle, Chris G. (2023). Migration of Ga vacancies and interstitials in β-Ga2 O3. Physical review B (PRB). ISSN 2469-9950. 107(2), p. 024109-1–024109-9. doi: 10.1103/PhysRevB.107.024109. Full text in Research Archive
  • Ghadi, Hemant; McGlone, Joe F.; Cornuelle, Evan; Senckowski, Alexander; Sharma, Shivam & Wong, Man Hoi [Show all 14 contributors for this article] (2023). Identification and characterization of deep nitrogen acceptors in beta-Ga2O3 using defect spectroscopies. APL Materials. ISSN 2166-532X. 11(11). doi: 10.1063/5.0160541. Full text in Research Archive
  • Borgersen, Jon; Karsthof, Robert Michael; Rønning, Vegard; Vines, Lasse; Von Wenckstern, Holger & Grundmann, Marius [Show all 8 contributors for this article] (2023). Origin of enhanced conductivity in low dose ion irradiated oxides. AIP Advances. ISSN 2158-3226. 13(1), p. 015211-1–015211-5. doi: 10.1063/5.0134699. Full text in Research Archive
  • Frodason, Ymir Kalmann; Krzyzaniak, Patryk Piotr; Vines, Lasse; Varley, Joel Basile; Van De Walle, Chris G. & Johansen, Klaus Magnus H (2023). Diffusion of Sn donors in β-Ga2O3. APL Materials. ISSN 2166-532X. 11(4), p. 041121-1–041121-8. doi: 10.1063/5.0142671. Full text in Research Archive
  • Seyidov, Palvan; Varley, Joel B.; Frodason, Ymir Kalmann; Klimm, Detlef; Vines, Lasse & Galazka, Zbigniew [Show all 10 contributors for this article] (2023). Thermal Stability of Schottky Contacts and Rearrangement of Defects in β-Ga2O3 Crystals. Advanced Electronic Materials. ISSN 2199-160X. doi: 10.1002/aelm.202300428. Full text in Research Archive
  • Langørgen, Amanda; Frodason, Ymir Kalmann; Karsthof, Robert Michael; Von Wenckstern, Holger; Jensen, Ingvild Julie Thue & Vines, Lasse [Show all 7 contributors for this article] (2023). Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy. Journal of Applied Physics. ISSN 0021-8979. 134(1), p. 015701-1–015701-6. doi: 10.1063/5.0150994. Full text in Research Archive
  • Karsthof, Robert Michael; Frodason, Ymir Kalmann; Galeckas, Augustinas; Weiser, Philip Michael; Zviagin, Vitaly & Grundmann, Marius (2022). Light Absorption and Emission by Defects in Doped Nickel Oxide. Advanced Photonics Research. ISSN 2699-9293. 3(11). doi: 10.1002/adpr.202200138.
  • Langørgen, Amanda; Zimmermann, Christian; Frodason, Ymir Kalmann; Verhoeven, Espen Førdestrøm; Weiser, Philip Michael & Karsthof, Robert Michael [Show all 8 contributors for this article] (2022). Influence of heat treatments in H2 and Ar on the E1 center in β-Ga2O3. Journal of Applied Physics. ISSN 0021-8979. 131(115702). doi: 10.1063/5.0083861. Full text in Research Archive
  • Mukhopadhyay, Partha; Hatipoglu, Isa; Frodason, Ymir Kalmann; Varley, Joel Basile; Williams, Martin S. & Hunter, Daniel A. [Show all 13 contributors for this article] (2022). Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE. Applied Physics Letters. ISSN 0003-6951. 121(11). doi: 10.1063/5.0107557. Full text in Research Archive
  • Olsen, Vegard Skiftestad; Frodason, Ymir Kalmann; Hommedal, Ylva Knausgård; Nielsen, Dina Marie; Weiser, Philip Michael & Johansen, Klaus Magnus H [Show all 9 contributors for this article] (2022). Li and group-III impurity doping in ZnSnN2: Potential and limitations. PHYSICAL REVIEW MATERIALS. ISSN 2475-9953. 6(12), p. 1–8. doi: 10.1103/PhysRevMaterials.6.124602. Full text in Research Archive

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  • Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2023). Ge donor diffusion in β-Ga2O3.
  • Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2023). Impurity diffusion in β-Ga2O3.
  • Frodason, Ymir Kalmann; Krzyzaniak, Patryk Piotr; Vines, Lasse; Varley, Joel Basile; Van de Walle, Chris G. & Johansen, Klaus Magnus H (2022). Ga vacancy-mediated diffusion of Sn donors in β-Ga2O3.
  • Frodason, Ymir Kalmann; Varley, Joel Basile; Johansen, Klaus Magnus H; Vines, Lasse & Van de Walle, Chris G. (2022). Strongly anisotropic migration of the Ga vacancy in ß-Ga2O3.
  • Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2022). Zn diffusion in 𝛽-Ga2O3 using SIMS.
  • Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2022). Diffusion of Zn in beta-Ga2O3.
  • Hommedal, Ylva Knausgård; Frodason, Ymir Kalmann; Vines, Lasse & Johansen, Klaus Magnus H (2022). Dynamic interaction of Zn and intrinsic defects in beta-Ga2O3.
  • Langørgen, Amanda; Frodason, Ymir Kalmann; Karsthof, Robert Michael; Wenckstern, Holger von; Thue Jensen, Ingvild & Vines, Lasse (2022). An electron trap in κ-Ga2O3 and the quest for its microscopic origin.
  • Vines, Lasse; Monakhov, Eduard & Kuznetsov, Andrej (2022). Defects in semiconductors. Journal of Applied Physics. ISSN 0021-8979. 132(15). doi: 10.1063/5.0127714. Full text in Research Archive
  • Krzyzaniak, Patryk Piotr; Frodason, Ymir Kalmann; Weiser, Philip Michael; Vines, Lasse & Johansen, Klaus Magnus H (2021). Diffusion of donor dopants in β-Ga2O3 and interplay with gallium vacancies.
  • Frodason, Ymir Kalmann; Zimmermann, Christian; Verhoeven, Espen Førdestrøm; Weiser, Philip Michael; Vines, Lasse & Varley, Joel Basile (2021). Multistability of Ga-O divacancies in β-Ga2O3.
  • Langørgen, Amanda; Karsthof, Robert Michael; Weiser, Philip Michael; Cavani, Olivier; Grasset, Romain & Frodason, Ymir Kalmann [Show all 8 contributors for this article] (2021). Steady-state Photocapacitance Spectroscopy of Intrinsic Defects in Electron-Irradiated β-Ga₂O₃.
  • Zimmermann, Christian; Frodason, Ymir Kalmann; Varley, Joel Basile; Verhoeven, Espen Førdestrøm; Rønning, Vegard & Weiser, Philip Michael [Show all 15 contributors for this article] (2021). Identification of Fe-, Ti- and H-related Charge-state Transition Levels in β-Ga2O3.
  • Krzyzaniak, Patryk Piotr; Vines, Lasse & Johansen, Klaus Magnus H (2021). Development of b-Ga2O3 as a novel material for power electronics, dopant diffusion and defect interaction. 7Letras.

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Published Oct. 12, 2021 11:58 AM - Last modified Jan. 19, 2024 10:47 AM

Contact

Project leader: Klaus Magnus Håland Johansen

Administrative contact person: Maren Skjøstad Nygaard

Participants

Detailed list of participants