Functionalizing Defects in Advanced Semiconductors (FUNDAMeNT)
The aim of FUNDAMeNT is to accelerate processes towards groundbreaking functionalities with a holistic approach to defects in Advanced semiconductors and nanostructures, linking defect behavior with electrical, optical and magnetic functionalities and targeting size dependence of defect properties on nanostructure size and shape.
Logo FUNDAMeNT. Created by Marianne Etzelmüller Bathen and Ymir Kalmann Frodason
About the project
The project is divided into three work packages:
3. WP3 will focus on Dependence of defect properties on nanostructure (crystal) size. This work package is led by Lasse Vines, and have two postdocs working within the work package spesifically - Geraldo Cristian Vasquez and Robert Karsthof.
In addition to the personell working spesifically within a given work package FUNDAMeNT also employs several post doctoral fellows that work broadly across all the work packages. These post docs are Kalliopi Bazioti, Olekandr Malyi and Konstantina Iordanidou. Thomas Aarholt also participates to this activity in a researcher capacity.
The overall objectives of FUNDAMeNT are:
- Design and control of electrical properties of oxide semiconductors based on fundamental insight in ruling defects/complexes
- Manipulate and explot point defects in SiC for spintronics
- Identify defects in nanocrystals and determine their electrical properties as a function of nanocrystal size
- Developing new methodologies to monitor and identify defects
Further, one strategic aim of FUNDAMeNT is to improve the track record of
all the involved staff, and consolidate the group as an internationally leading group in advanced semiconductors and defect physics.
Financial support was kindly provided by the Research Council of Norway and University of Oslo through the frontier research project FUNDAMeNT (no. 251131, FriPro ToppForsk-program)