SiQUEST Silicon Integrated QUantum Emitter Strain deTection

• Frøland, Mariann Carlsen; Furlan, Riccardo; Bygdås, Martin; Olsen, Vegard Standeren; Bathen, Marianne Etzelmüller & Vines, Lasse (2026). Sputtered Aluminum Nitride Thin Films as Waveguides and Hosts for Single-Photon Emitters. Full text in Research Archive Show summary

  AlN is a promising material for hosting quantum emitters and for use as optical waveguides. This work investigates the emission and structural properties of sputtered aluminium nitride thin films, with the aim of integrating these films into a quantum sensor.

• Stokke, Raymond Andreas & Halvorsen, Trond (2026). SiQUEST Innovation and Societal Risk: Initial Risk Assessment. SINTEF Digital. Full text in Research Archive Show summary

  This project memo-report presents the Milestone 2 (M2) Initial Risk Assessment pertaining to innovation and societal risks for the Silicon Integrated QUantum Emitter Strain detection (SiQUEST) project. SiQUEST is an early-stage effort to converge aluminium-nitride single-photon emitters (AlN SPE), integrated photonics, silicon single photon avalanche diode (SPAD) and micro-electromechanical systems (MEMS) into a compact quantum-sensing platform. The project memo-report combines the project’s Technology Readiness Levels (TRL) and Sustainability Readiness Levels (SRL) assessments with literature on responsible innovation, convergence, sustainability, governance and dual use. The central finding is that of low and uneven readiness, especially at integrated-system level. Priorities are interface-focused readiness indicators, early lifecycle data collection, research-security and dual-use reviews. No evidence at this stage supports treating the platform as an acute societal risk. Strategic risk assessment is recommended as a mechanism for further developing credible, adaptive and socially responsible innovation pathways.

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