Magnetron sputtering

The Flextura system has two separate sputtering chambers; Gate 2 has five sputter sources, and Gate 3 is the remote plasma chamber, where the plasma is generated remotely, that has 4 sputter sources. The four systems are all suitable for fabricating metal oxide, and metal nitride thin films, and offer a wide parameter space for optimizing the thin film growth process. For contamination control, the systems are dedicated to specific materials systems. 

Sputter sources

• Direct current (DC): Semicore, NanoPVD and Flextura (Gate 2 and 3).
• Radio-frequency (RF): Moorfield, Semicore, NanoPVD and Flextura (Gate 2 and 3).
• High-Power Impulse Magnetron sputtering (HiPIMS): Flextura (Gate 2 and 3).
• Remote-plasma sputtering: Flextura (Gate 3).

Instruments Features

• Substrate size: Samples up to 4 in. wafers are applicable for all systems. Moorfield can handle larger substrates. Smaller samples are also applicable.
• Substrate heating: maximum substrate heating for the different systems are as follows; Moorfield (600 ^oC), Semicore (600 ^oC), NanoPVD (600 ^oC) and Flextura (1000 ^oC).
• Inert and reactive gasses: The availability of gasses for sputtering in the systems are as follows: Moorfield (Ar, N₂ and O₂), Semicore (Ar, N₂ and O₂), NanoPVD (Ar, N₂ and O₂) and Flextura (Ar, N₂, H₂ and O₂).
• Number of sources and possibility of co-sputtering: 
  • Moorfield: two 3 in. RF sources, co-sputtering possible.
  • NanoPVD: two 2 in. RF sources and one 2 in. DC source, co-sputtering possible with either two RF sources or one RF and DC source.
  • Semicore: two 3 in. RF sources and one 3 in. DC source, co-sputtering possible.
  • Flextura Gate 2: one 3 in. HiPIMS source, two 3 in. RF source, and two 3 in. DC sources. Co-sputtering possible.
  • Flextura Gate 3: one 3 in. and 2 in. RF sources, and one 3 in. and 2 in. DC sources. Co-sputtering possible.

• Typical base pressure: 

  • Moorfield: < 3 x 10^-6 mbar after 5h pump-down, 3 x 10^-7 mbar after 24h.
  • Semicore: < 3 x 10^-6 mbar after 5h pump-down, 3 x 10^-7 mbar after 24h.
  • NanoPVD: < 3 x 10^-6 mbar after 3h pump-down, 3 x 10^-7 mbar after 24h.
  • Flextura Gate 2 and 3: The system has a load-lock which pumps down in ~15min. Gate 2 and 3 are thus not ventilated and remains at a base pressure in the range of 10^-8 - 10^-9 mbar.

• Materials systems:

  • Moorfield: Wide range of materials allowed, including metal oxides, metal nitrides and metal films. 
  • NanoPVD: Wide range of materials allowed, including metal oxides, metal nitrides and metal films.
  • Semicore: Wide range of materials allowed, mostly used for metal oxides, as ZnO, CuO₂, SnO.
  • Flextura Gate 2: Metal oxynitrides and metal nitrides, mostly used for ZnON and II-IV nitrides.
  • Flextura Gate 3: Metal oxides, mostly used for Ga₂O₃ growth.
  • For new materials, please contact UiO MiNaLab Manager for further discussion.
• Extended Flextura capabilities:
  • In-situ annealing in anion- or cation-rich ambient. Anion-rich ambient employing gas (Ar, N₂, O₂ and H₂), cation-rich ambient by employing a 2 in. RF magnetron sputtering source with metal target (not directed at the samples).
  • In-situ surface analysis with low-energy electron diffraction (LEED), X-ray and UV- photoelectron spectroscopy (XPS and UPS), and angular-resolved photo-emission spectroscopy (ARPES).

Sample Preparation Equipment

• Roffin laser cutter, for substrate cutting.
• Ångström, Leybold and Baltzers PVD systems, for electrical contact deposition.

Prices

The Semicore, NanoPVD and Moorfield systems are available for rent with or without an operator.

For the Flextura system, the corresponding charges are as follows.

Prices are in Norwegian kroner (NOK) excl. VAT. All prices are subject to change. The reduced fees for start-up companies are available for the first 24 months after start-up. Training costs are currently covered by NorFab.

Contact

• Simon Phillip Cooil, Lab Manager
• Eirini Zacharaki, Research Infrastructure Coordinator