Holger Von Wenckstern

• Montag, S.; Splith, D.; Kneiß, M.; Grundmann, M.; Garcia Fernandez, Javier & Prytz, Øystein [Vis alle 7 forfattere av denne artikkelen] (2023). Cation segregation observed in an (In,Ga) 2 O3 material thin film library beyond the miscibility limit of the bixbyite structure. PHYSICAL REVIEW MATERIALS. ISSN 2475-9953. 7(9). doi: 10.1103/PhysRevMaterials.7.094603. Fulltekst i vitenarkiv
• Langørgen, Amanda; Frodason, Ymir Kalmann; Karsthof, Robert Michael; Von Wenckstern, Holger; Jensen, Ingvild Julie Thue & Vines, Lasse [Vis alle 7 forfattere av denne artikkelen] (2023). Defect level in κ-Ga2O3 revealed by thermal admittance spectroscopy. Journal of Applied Physics. ISSN 0021-8979. 134(1), s. 015701-1–015701-6. doi: 10.1063/5.0150994. Fulltekst i vitenarkiv Vis sammendrag

  Defects in pulsed-laser deposition grown have been investigated using thermal admittance spectroscopy and secondary ion mass spectrometry (SIMS). A film was grown on either a tin-doped indium oxide or an aluminum-doped zinc oxide buffer layer on a sapphire substrate functioning as back contact layer in vertical diode structures. In both sample types, a distinct signature in the capacitance signal was observed in the temperature range of 150–260 K. The corresponding defect charge-state transition level, labeled ⁠, was found to exhibit an activation energy of 0.21 eV. Potential candidates for the level were investigated using a combination of SIMS and hybrid-functional calculations. SIMS revealed the main impurities in the sample to be tin, silicon, and iron. The hybrid-functional calculations predict the acceptor levels of substitutional iron to lie 0.7–1.2 eV below the conduction band minimum depending on Ga-site, making an unlikely candidate for the level. Furthermore, Si as well as Sn substituting on the sixfold coordinated Ga2 site and the fivefold coordinated Ga3 and Ga4 sites are all shallow donors in -⁠, similar to that of -⁠. Sn substituting on the fourfold Ga1 site is, however, predicted to have levels in the bandgap at 0.15 and 0.24 eV below the conduction band minimum, in accordance with the extracted activation energy for ⁠. Thus, we tentatively assign as the origin of the level.

• Borgersen, Jon; Karsthof, Robert Michael; Rønning, Vegard; Vines, Lasse; Von Wenckstern, Holger & Grundmann, Marius [Vis alle 8 forfattere av denne artikkelen] (2023). Origin of enhanced conductivity in low dose ion irradiated oxides. AIP Advances. ISSN 2158-3226. 13(1), s. 015211-1–015211-5. doi: 10.1063/5.0134699. Fulltekst i vitenarkiv

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• Jensen, Ingvild Julie Thue; Thøgersen, Annett; Cooil, Simon Phillip; Wells, Justin William; Prytz, Øystein & Von Wenckstern, Holger (2023). Bandgap and band offset engineering in κ-Ga2O3-based thin films (Invited talk)).

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