About the project
CONCEPT (Crystalline Oxides for Next Generation Computing and Emerging Photonic Technologies) addresses fundamental limitations in today’s silicon-based information technology. As computing performance, energy efficiency and data transfer increasingly approach physical limits, new materials and device concepts are urgently needed.
The University of Oslo leads CONCEPT and plays a central role in developing the project’s core materials platform. The project focuses on functional crystalline oxides, particularly ferroelectric materials, which enable novel concepts for neuromorphic computing and integrated photonics. A key scientific breakthrough pursued in CONCEPT is the use of atomic layer deposition (ALD) to achieve epitaxial oxide films at low, CMOS-compatible temperatures.
UiO contributes internationally leading expertise in ALD process development for complex oxides. By combining fundamental understanding with device-relevant integration, CONCEPT aims to bridge the gap between laboratory-scale materials research and future industrial technologies.
Objectives
The main objective of CONCEPT is to establish a scalable and industry-compatible platform for epitaxial ferroelectric oxides using atomic layer deposition. Led by UiO, the project aims to demonstrate low-temperature processes that enable high-performance electronic and photonic devices with reduced energy consumption.
Background
Traditional semiconductor technology is reaching limits in terms of scaling, power consumption and functionality. Ferroelectric oxides offer unique electrical and optical properties that can enable new computing paradigms and low-loss photonic components, but have historically required high-temperature growth incompatible with industrial manufacturing.
Research led at UiO has demonstrated that atomic layer deposition can overcome these limitations by enabling crystalline oxide growth at much lower temperatures. CONCEPT builds on this foundation to establish ALD as a key technology for future oxide-based electronics and photonics.
Implementation
CONCEPT integrates materials chemistry, thin-film growth, advanced characterization and device integration. UiO leads the development of new ALD processes for epitaxial oxides and coordinates their integration with complementary fabrication and testing activities across the consortium.
Impact
By enabling industry-compatible fabrication of advanced oxide materials, CONCEPT lowers the barrier for transferring scientific breakthroughs into future technologies. The project strengthens UiO’s and Europe’s position in next-generation electronics and photonics, while contributing to more energy-efficient and sustainable ICT solutions.
Read more about the project on the official website: https://conceptproject.eu/
