Graphene integrated with semiconductor devices for high performance (GraSeRad) (completed)
About the project
The primary objective of the project is to realize graphene-based radiation sensors that employ a novel detection mechanism offering the advantage
of potentially surpassing the state of the art detectors, thanks to graphene's exceptional electronic properties, in terms of sensitivity/resolution, speed,
low voltage and cost, thereby responding to the shortcomings in radiation detection and imaging in health and environmental sectors.
The secondary objective of the object is to establish the growth of high quality graphene films using the NorFab infrastructure in Norway, and to develop a scalable approach for graphene-on-semiconductor Device fabrication. This is essential for realization graphene based detectors and will also form a basis for graphene-based research nationwide. The project aims to achieve a mobility of above 4,000 cm2/Vs in graphene films integrated with semiconductor wafers using in-house grown and/or commercial graphene.
The project is funded by the Research Council of Norway
In addition to us here at UiO, there are several partners that provide professional/financial contributions to the project:
- SINTEF (the project coordinator)
- Norwegian University of Science and Technology (NTNU)