Justin William Wells

• Åsland, Anna Cecilie; Bakkelund, Johannes; Cooil, Simon Phillip; Røst, Håkon; Hu, Jinbang & Vescovo, E. [Vis alle 9 forfattere av denne artikkelen] (2025). Overcoming the challenges of accessing topological hallmarks in Sb(112). Electronic Structure. 7(3). doi: 10.1088/2516-1075/adf384. Fulltekst i vitenarkiv Vis sammendrag

  Sb is topologically non-trivial and semi-metallic, but differs from many topological semi-metals because of its continuous band gap. By measuring its (112) surface using angle- and spin-resolved photoemission spectroscopy, Sb(112) was shown to have 1D spin-polarised surface states resembling those on vicinal Bi surfaces and many topological insulators and topological semi-metals. The shape and spin-polarisation of the measured features and the calculated bands agreed. However, the measured features had a slightly steeper energy dispersion and different Fermi-momenta than the calculated bands. Both theoretical and experimental methods were necessary when determining the topology of Sb(112). The presence of projected bulk states near the Fermi-level and varying surface localisation of the electronic states meant it was challenging to deduce the topology of Sb(112) from the number of bands crossing the Fermi-level or a continuous contour in the bulk band gap. Ultimately, the calculations and measurements suggest that there are topological surface states on the Sb(112) surface.

• Hu, Jinbang; Wang, Xiansi; Åsland, Anna Cecilie & Wells, Justin William (2025). Unconventional broadening of Rashba spin splitting in a Au<inf>2</inf>Sb surface alloy with periodic structural defects. npj Quantum Materials. 10(1). doi: 10.1038/s41535-024-00724-5. Fulltekst i vitenarkiv Vis sammendrag

  Most Rashba spin splitting experimentally studied so far has ideal lattice with inversion symmetry broken, which limits the possibility to minimize the presence of spin-degenerate carriers near the Fermi level. Here, we report a novel 2D Au2Sb surface alloy decorated with periodic structural defects that exhibits modulation on the Rashba spin-orbit coupling band. Spin- and angle-resolved photoemission spectroscopy reveals a Rashba spin-split band with antiparallel spin polarization, significantly broadened compared to the Au₂Sn surface alloy. From the good agreement between the experimental results and DFT calculations, we identify that the broadening of the Rashba bands comes from variations in Sb atom corrugation induced by the periodic three-pointed star-shaped defects. These periodic defects can shift the energy position of the Rashba bands without breaking the in-plane rotational and mirror symmetries. Our findings highlight the potential to tune spin-dependent properties in 2D materials for spintronic applications.

• Strand, Frode Sneve; Cooil, Simon Phillip; Campbell, Quinn T.; Flounders, John J.; Røst, Håkon & Åsland, Anna Cecilie [Vis alle 16 forfattere av denne artikkelen] (2025). Direct Observation of 2DEG States in Shallow Si:Sb δ-Layers. Journal of Physical Chemistry C. ISSN 1932-7447. 129(2), s. 1339–1347. doi: 10.1021/acs.jpcc.4c07331. Fulltekst i vitenarkiv Vis sammendrag

  We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb δ-layers. We show that, in spite of the known challenges in producing highly confined Sb δ-layers, sufficient confinement is created such that the lowest conduction band states (Γ states, studied in depth in other silicon δ-layers), become occupied and can be observed using angle-resolved photoemission spectroscopy. The electronic structure of the Si:Sb δ-layers closely resembles that of Si:P systems, where the observed conduction band is near-parabolic and slightly anisotropic in the k∥ plane. The observed Γ state extends ∼1 nm in the out-of-plane direction, which is slightly wider than the 1/3 monolayer thick dopant distribution. This is caused by a small segregation of the dopant layer, which is nevertheless minimal when comparing with earlier published attempts. Our results serve to demonstrate that Sb is still a feasible dopant alternative for use in the semiconductor δ-layer platform, providing similar electronic functionality to Si:P systems. Additionally, it has the advantages of being less expensive, more controllable, safer to handle, and more compatible with industrial patterning techniques. Si:Sb is therefore a viable platform for emerging quantum device applications.

• Åsland, Anna Cecilie; Cooil, Simon Phillip; Mamedov, Damir; Røst, Håkon; Bakkelund, Johannes & Li, Z. [Vis alle 8 forfattere av denne artikkelen] (2024). Initial stages of water absorption on CeO2 surfaces at very low temperatures for understanding anti-icing coatings. Materials Research Express. 11(11). doi: 10.1088/2053-1591/ad913e. Fulltekst i vitenarkiv Vis sammendrag

  Anti-icing coatings are intended to prevent ice formation on surfaces, minimising the risk of surface-related damage and also reducing ice-related hazards in society. We demonstrate the usefulness of x-ray photoelectron spectroscopy (XPS) as a tool for investigating the anti-icing properties of surfaces simultaneously with their chemical composition by looking at the initial stages of water absorption on the surface of CeO2 coatings. CeO2 coatings are robust, hydrophobic, and transmit light, thus they are suitable for a range of applications. In this work, CeO2 coatings were grown by sputter deposition and transferred to an ultra-high vacuum chamber where they were cooled to ≈ 100 K and exposed to a H2O atmosphere at 1 × 10−8 mbar. XPS measurements were performed before and after the exposure to H2O, in-situ and at cryogenic temperatures. The chemical composition of CeO2 did not change significantly during the experiment. Additionally, XPS revealed that little to no ice formed on the surface of CeO2 after the H2O exposure at ≈ 100 K. In contrast, ice was observed all over the sample holder on which the CeO2 was mounted. These findings suggest CeO2 is a promising candidate for future anti-icing coatings and that XPS is a useful technique to investigate the anti-icing properties of surfaces.

• Røst, Håkon; Mazzola, Federico; Bakkelund, Johannes; Åsland, Anna Cecilie; Hu, Jinbang & Cooil, Simon Phillip [Vis alle 8 forfattere av denne artikkelen] (2024). Disentangling electron-boson interactions on the surface of a familiar ferromagnet. Physical review B (PRB). ISSN 2469-9950. 109, s. 1–9. doi: 10.1103/PhysRevB.109.035137. Fulltekst i vitenarkiv Vis sammendrag

  We report energy renormalizations from electron-phonon and electron-magnon interactions in spin minority surface resonances on Ni(111). The different interactions are identified, disentangled, and quantified from the characteristic signatures they provide to the complex self-energy and the largely different binding energies at which they occur. The observed electron-magnon interactions exhibit a strong dependence on momentum and the electron energy band position in the bulk Brillouin zone. In contrast, electron-phonon interactions observed from the same bands appear to be relatively momentum and symmetry independent. Additionally, a moderately strong (λ>0.5) electron-phonon interaction is distinguished from a near-parabolic spin majority band not crossing the Fermi level.

• Mamedov, Damir; Åsland, Anna Cecilie; Cooil, Simon Phillip; Røst, Håkon; Bakkelund, Johannes & Allaniyazov, Atabek [Vis alle 8 forfattere av denne artikkelen] (2023). Enhanced hydrophobicity of CeO<inf>2</inf> thin films: Role of the morphology, adsorbed species and crystallography. Materials Today Communications. 35. doi: 10.1016/j.mtcomm.2023.106323. Fulltekst i vitenarkiv Vis sammendrag

  In order to guarantee the long-term efficiency of hydrophobic materials in real-world situations, it is necessary that their surfaces are highly resistant to scratching, fouling and misting. Furthermore, for the specific applications, e.g. in photovoltaic systems, the water-repelling material must necessarily have a large bandage, such that it does not absorb light in the spectral range which is utilized by the underlying photovoltaic cell. One especially promising candidate for this and many other technologically important applications is cerium dioxide (CeO2, ceria). In the current study, we propose the production framework for the manufacturing of CeO2-based thin films with tunable wetting behavior. For obtaining the coatings with various hydrophobicity, ceria is deposited on the substrates with different roughness via reactive magnetron sputtering, with consequent treatment of the films in vapor of different hydrocarbons. By systematic study using the XRD, SEM, XPS and water contact angle (WCA) instruments, we found that surface texturization, different plains at the surface of the films as well as the adsorbed organic molecules all strongly influence on wettability of the CeO2 thin films. In addition, comparison of WCAs for ceria and silicon oxide SiOx is performed. The higher wettability for the former points out the essential role of the surface material despite presence of hydrocarbons. It is demonstrated that by purposeful controlling for all the parameters – surface texturization, the top material and its crystallography, and adsorbed organic molecules – one can reach superhydrophobic state of the surface.

• Røst, Håkon; Cooil, Simon Phillip; Åsland, Anna Cecilie; Hu, Jinbang; Ali, Ayaz & Taniguchi, Takashi [Vis alle 12 forfattere av denne artikkelen] (2023). Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride. Nano Letters. ISSN 1530-6984. 23(16), s. 7539–7545. doi: 10.1021/acs.nanolett.3c02086. Fulltekst i vitenarkiv Vis sammendrag

  Understanding the collective behavior of the quasiparticles in solid-state systems underpins the field of non-volatile electronics, including the opportunity to control many-body effects for well-desired physical phenomena and their applications. Hexagonal boron nitride (hBN) is a wide energy bandgap semiconductor, showing immense potential as a platform for low-dimensional device heterostructures. It is an inert dielectric used for gated devices, having a negligible orbital hybridization when placed in contact with other systems. Despite its inertness, we discover a large electron mass enhancement in few-layer hBN affecting the lifetime of the pi-band states. We show that the renormalization is phonon-mediated and consistent with both single- and multiple-phonon scattering events. Our findings thus unveil a so-far unknown many-body state in a wide-bandgap insulator, having important implications for devices using hBN as one of their building blocks.

• Tuniz, Manuel; Consiglio, Armando; Puntel, Denny; Bigi, Chiara; Enzner, Stefan & Pokharel, Ganesh [Vis alle 25 forfattere av denne artikkelen] (2023). Dynamics and resilience of the unconventional charge density wave in ScV6Sn6 bilayer kagome metal. Communications Materials. 4(1), s. 1–8. doi: 10.1038/s43246-023-00430-y. Fulltekst i vitenarkiv Vis sammendrag

  Long-range electronic ordering descending from a metallic parent state constitutes a rich playground to study the interplay of structural and electronic degrees of freedom. In this framework, kagome metals are in the most interesting regime where both phonon and electronically mediated couplings are significant. Several of these systems undergo a charge density wave transition. However, to date, the origin and the main driving force behind this charge order is elusive. Here, we use the kagome metal ScV6Sn6 as a platform to investigate this problem, since it features both a kagome-derived nested Fermi surface and van-Hove singularities near the Fermi level, and a charge-ordered phase that strongly affects its physical properties. By combining time-resolved reflectivity, first principles calculations and photo-emission experiments, we identify the structural degrees of freedom to play a fundamental role in the stabilization of charge order, indicating that ScV6Sn6 features an instance of charge order predominantly originating from phonons.

• Åsland, Anna Cecilie; Bakkelund, Johannes; Thingstad, Even; Røst, Håkon; Cooil, Simon Phillip & Hu, Jinbang [Vis alle 11 forfattere av denne artikkelen] (2023). One-dimensional spin-polarized surface states: A comparison of Bi(112) with other vicinal bismuth surfaces. Physical review B (PRB). ISSN 2469-9950. 108(20). doi: 10.1103/PhysRevB.108.205403. Fulltekst i vitenarkiv Vis sammendrag

  Vicinal surfaces of bismuth are unique test beds for investigating one-dimensional (1D) spin-polarized surface states that may one day be used in spintronic devices. In this paper, such states have been observed for the (112) surface when measured using angle- and spin-resolved photoemission spectroscopy, and also when calculated using a tight-binding model and with density functional theory. The surface states appear as elongated Dirac-cones which are 1D and almost dispersionless in the ky direction, but disperse with energy in the orthogonal kx direction to form two ×-like features centered at the ky line through Γ. Unlike many materials considered for spintronic applications, their 1D nature suggests that conductivity and spin-transport properties are highly dependent on direction. The spin polarization of the surface states is mainly in plane and parallel to the 1D states, but there are signs of a tilted out-of-plane spin-vector component for one of the features. The Bi(112) surface states resemble those found for other vicinal surfaces of bismuth, strongly indicating that their existence and general properties are robust properties of vicinal bismuth surfaces. Furthermore, differences in the details of the states, particularly related to their spin polarization, suggest that the electronic band structure may be engineered simply by precise cutting and polishing of the crystal.

• Røst, Håkon; Tosi, Ezequiel; Strand, Frode Sneve; Åsland, Anna Cecilie; Lacovig, Paolo & Lizzit, Silvano [Vis alle 7 forfattere av denne artikkelen] (2023). Probing the Atomic Arrangement of Subsurface Dopants in a Silicon Quantum Device Platform. ACS Applied Materials & Interfaces. ISSN 1944-8244. 15(18), s. 22637–22643. doi: 10.1021/acsami.2c23011. Fulltekst i vitenarkiv Vis sammendrag

  High-density structures of subsurface phosphorus dopants in silicon continue to garner interest as a silicon-based quantum computer platform; however, a much-needed confirmation of their dopant arrangement has been lacking. In this work, we take advantage of the chemical specificity of X-ray photoelectron diffraction to obtain the precise structural configuration of P dopants in subsurface Si:P δ-layers. The growth of δ-layer systems with different levels of doping is carefully studied and verified using X-ray photoelectron spectroscopy and low-energy electron diffraction. Subsequent diffraction measurements reveal that in all cases, the subsurface dopants primarily substitute with Si atoms from the host material. Furthermore, no signs of carrier-inhibiting P–P dimerization can be observed. Our observations not only settle a nearly decade-long debate about the dopant arrangement but also demonstrate how X-ray photoelectron diffraction is surprisingly well suited for studying subsurface dopant structure. This work thus provides valuable input for an updated understanding of the behavior of Si:P δ-layers and the modeling of their derived quantum devices.

• Reed, B.P.; Bathen, Marianne Etzelmüller; Ash, J.W.R.; Meara, C.J.; Zakharov, A.A. & Goss, J.P. [Vis alle 9 forfattere av denne artikkelen] (2022). Diamond (111) surface reconstruction and epitaxial graphene interface. Physical review B (PRB). ISSN 2469-9950. 105(20). doi: 10.1103/PhysRevB.105.205304. Fulltekst i vitenarkiv
• Røst, Håkon Ivarssønn; Reed, Benjamen P.; Strand, Frode Sneve; Durk, Joseph A.; Evans, D. Andrew & Grubišić-Čabo, Antonija [Vis alle 18 forfattere av denne artikkelen] (2021). A Simplified Method for Patterning Graphene on Dielectric Layers. ACS Applied Materials & Interfaces. ISSN 1944-8244. 13(31), s. 37510–37516. doi: 10.1021/acsami.1c09987. Fulltekst i vitenarkiv Vis sammendrag

  The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures formed at moderate temperatures (600–700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.

• Michels, Leander; Richter, Annika; Chellappan, Rajesh Kumar; Røst, Håkon Ivarssønn; Behsen, Alenka Djarmila & Wells, Kristin Høydalsvik [Vis alle 13 forfattere av denne artikkelen] (2021). Electronic and structural properties of the natural dyes curcumin, bixin and indigo. RSC Advances. 11(23), s. 14169–14177. doi: 10.1039/d0ra08474c. Fulltekst i vitenarkiv Vis sammendrag

  An optical, electronic and structural characterisation of three natural dyes potentially interesting for application in organic solar cells, curcumin (C21H20O6), bixin (C25H30O4) and indigo (C16H10N2O2), was performed. X-Ray Diffraction (XRD) measurements, showed that curcumin has a higher degree of crystallinity compared to bixin and indigo. The results from the Pawley unit cell refinements for all dyes are reported. Optical absorption spectra measured by UV-Visible Spectroscopy (UV-Vis) on thermally evaporated films revealed that bixin undergoes chemical degradation upon evaporation, while curcumin and indigo appear to remain unaffected by this process. Combined Ultraviolet Photoemission Spectroscopy (UPS) and Inverse Photoemission Spectroscopy (IPES) spectra measured on the dyes revealed that all of them are hole-conducting materials and allowed for the determination of their electronic bandgaps, and Fermi level position within the gap. UV Photo-Emission Electron Microscopy (PEEM) revealed the workfunction of the dye materials and indicated that indigo has a negative electron affinity. PEEM was also used to study degradation by UV irradiation and showed that they are quite robust to UV exposure.

• Røst, Håkon Ivarssønn; Chellappan, Rajesh Kumar; Strand, Frode Sneve; Grubišić-Čabo, Antonija; Reed, Benjamen P. & Prieto, Mauricio J. [Vis alle 16 forfattere av denne artikkelen] (2021). Low-Temperature Growth of Graphene on a Semiconductor. Journal of Physical Chemistry C. ISSN 1932-7447. 125(7), s. 4243–4252. doi: 10.1021/acs.jpcc.0c10870. Fulltekst i vitenarkiv Vis sammendrag

  The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition-metal-treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around 450–500 °C. From the chemical reaction between SiC and thin films of Fe or Ru, sp3 carbon is liberated from the SiC crystal and converted to sp2 carbon at the surface. The quality of the graphene is demonstrated by using angle-resolved photoemission spectroscopy and low-energy electron diffraction. Furthermore, the orientation and placement of the graphene layers relative to the SiC substrate are verified by using angle-resolved absorption spectroscopy and energy-dependent photoelectron spectroscopy, respectively. With subsequent thermal treatments to higher temperatures, a steerable diffusion of the metal layers into the bulk SiC is achieved. The result is graphene supported on magnetic silicide or optionally, directly on semiconductor, at temperatures ideal for further large-scale processing into graphene-based device structures.

• Mæland, Kristian; Røst, Håkon Ivarssønn; Wells, Justin William & Sudbø, Asle (2021). Electron-magnon coupling and quasiparticle lifetimes on the surface of a topological insulator. Physical review B (PRB). ISSN 2469-9950. 104(12). doi: 10.1103/PhysRevB.104.125125. Fulltekst i vitenarkiv Vis sammendrag

  The fermionic self-energy on the surface of a topological insulator proximity coupled to ferro- and antiferromagnetic insulators is studied. An enhanced electron-magnon coupling is achieved by allowing the electrons on the surface of the topological insulator to have a different exchange coupling to the two sublattices of the antiferromagnet. Such a system is therefore seen as superior to a ferromagnetic interface for the realization of magnon-mediated superconductivity. The increased electron-magnon-coupling simultaneously increases the self-energy effects. In this paper we show how the inverse quasiparticle lifetime and energy renormalization on the surface of the topological insulator can be kept low close to the Fermi level by using a magnetic insulator with a sufficient easy-axis anisotropy. We find that the antiferromagnetic case is most interesting from both a theoretical and an experimental standpoint due to the increased electron-magnon coupling, combined with a reduced need for easy-axis anisotropy compared to the ferromagnetic case. We also consider a set of material and instrumental parameters where these self-energies should be measurable in angle-resolved photoemission spectroscopy experiments, paving the way for a measurement of the interfacial exchange coupling strength.

• Holst, Bodil; Alexandrowicz, Gil; Avidor, Nadav; Benedek, Giorgio; Bracco, Gianangelo & Ernst, Wolfgang E. [Vis alle 16 forfattere av denne artikkelen] (2021). Material properties particularly suited to be measured with helium scattering: selected examples from 2D materials, van der Waals heterostructures, glassy materials, catalytic substrates, topological insulators and superconducting radio frequency materials. Physical Chemistry, Chemical Physics - PCCP. ISSN 1463-9076. 23(13), s. 7653–7672. doi: 10.1039/d0cp05833e. Fulltekst i vitenarkiv Vis sammendrag

  Helium Atom Scattering (HAS) and Helium Spin-Echo scattering (HeSE), together helium scattering, are well established, but non-commercial surface science techniques. They are characterised by the beam inertness and very low beam energy (<0.1 eV) which allows essentially all materials and adsorbates, including fragile and/or insulating materials and light adsorbates such as hydrogen to be investigated on the atomic scale. At present there only exist an estimated less than 15 helium and helium spin-echo scattering instruments in total, spread across the world. This means that up till now the techniques have not been readily available for a broad scientific community. Efforts are ongoing to change this by establishing a central helium scattering facility, possibly in connection with a neutron or synchrotron facility. In this context it is important to clarify what information can be obtained from helium scattering that cannot be obtained with other surface science techniques. Here we present a non-exclusive overview of a range of material properties particularly suited to be measured with helium scattering: (i) high precision, direct measurements of bending rigidity and substrate coupling strength of a range of 2D materials and van der Waals heterostructures as a function of temperature, (ii) direct measurements of the electron–phonon coupling constant λ exclusively in the low energy range (<0.1 eV, tuneable) for 2D materials and van der Waals heterostructures (iii) direct measurements of the surface boson peak in glassy materials, (iv) aspects of polymer chain surface dynamics under nano-confinement (v) certain aspects of nanoscale surface topography, (vi) central properties of surface dynamics and surface diffusion of adsorbates (HeSE) and (vii) two specific science case examples – topological insulators and superconducting radio frequency materials, illustrating how combined HAS and HeSE are necessary to understand the properties of quantum materials. The paper finishes with (viii) examples of molecular surface scattering experiments and other atom surface scattering experiments which can be performed using HAS and HeSE instruments.

• Thingstad, Even; Kamra, Akashdeep; Wells, Justin & Sudbø, Asle (2020). Phonon-mediated superconductivity in doped monolayer materials. Physical review B (PRB). ISSN 2469-9950. 101(21). doi: 10.1103/PhysRevB.101.214513. Fulltekst i vitenarkiv Vis sammendrag

  Insight into why superconductivity in pristine and doped monolayer graphene seems strongly suppressed has been central for the recent years' various creative approaches to realize superconductivity in graphene and graphene-like systems. We provide further insight by studying electron-phonon coupling and superconductivity in doped monolayer graphene and hexagonal boron nitride based on intrinsic phonon modes. Solving the graphene gap equation using a detailed model for the effective attraction based on electron tight binding and phonon force constant models, the various system parameters can be tuned at will. Consistent with results in the literature, we find slight gap modulations along the Fermi surface, and the high-energy phonon modes are shown to be the most significant for the superconductivity instability. The Coulomb interaction plays a major role in suppressing superconductivity at realistic dopings. Motivated by the direct onset of a large density of states at the Fermi surface for small charge dopings in hexagonal boron nitride, we also calculate the dimensionless electron-phonon coupling strength there, but the comparatively large density of states cannot immediately be capitalized on, and the charge doping necessary to obtain significant electron-phonon coupling is similar to the value in graphene.

• Mazzola, Federico; Chen, Chin-Yi; Rahman, Rajib; Zhu, Xie-Gang; Polley, Craig & Balasubramanian, Thiagarajan [Vis alle 10 forfattere av denne artikkelen] (2020). The sub-band structure of atomically sharp dopant profiles in silicon. npj Quantum Materials. 5(1). Fulltekst i vitenarkiv
• Hu, Jinbang; Strand, Frode Sneve; Chellappan, Rajesh Kumar; Zhang, Zhengde; Shen, Kongchao & Hu, JinPing [Vis alle 13 forfattere av denne artikkelen] (2020). Direct Synthesis of Semimetal Phthalocyanines on a Surface with Insights into Interfacial Properties. The Journal of Physical Chemistry Letters. 124(15), s. 8247–8256. doi: 10.1021/acs.jpcc.0c00895. Fulltekst i vitenarkiv
• Hu, Jinbang; Hu, JinPing; Zhang, Zhengde; Shen, Kongchao; Liang, Zhaofeng & Zhang, Huan [Vis alle 12 forfattere av denne artikkelen] (2020). Ullmann coupling of 2,7-dibromopyrene on Au (1 1 1) assisted by surface adatoms. Applied Surface Science. ISSN 0169-4332. 513. doi: 10.1016/j.apsusc.2020.145797. Fulltekst i vitenarkiv
• Pakpour-Tabrizi, Alex; Schenk, Alex Kevin; Holt, Ann Julie; Mahatha, S.K.; Arnold, Fabian & Bianchi, Marco [Vis alle 14 forfattere av denne artikkelen] (2020). The occupied electronic structure of ultrathin boron doped diamond. Nanoscale Advances. 2(3), s. 1358–1364. doi: 10.1039/C9NA00593E. Fulltekst i vitenarkiv Vis sammendrag

  Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.

• Holt, Ann Julie; Mahatha, Sanjoy K.; Stan, Raluca-Maria; Strand, Frode Sneve; Nyborg, Thomas & Curcio, Davide [Vis alle 12 forfattere av denne artikkelen] (2020). Observation and origin of the [delta] manifold in Si:P [delta] layers. Physical review B (PRB). ISSN 2469-9950. 101(12). doi: 10.1103/PhysRevB.101.121402. Fulltekst i vitenarkiv
• Hu, Jinbang; Shen, Kongchao; Hu, Jinping; Sun, Haoliang; Tian, Qiwei & Zhaofeng, * [Vis alle 11 forfattere av denne artikkelen] (2019). Structural Transformation of 2,7-Dibromopyrene on Au(111) Mediated by Halogen-Bonding Motifs. ChemPhysChem. ISSN 1439-4235. 20(18), s. 2376–2381. doi: 10.1002/cphc.201900259. Fulltekst i vitenarkiv
• Schenk, Alex Kevin; Pakpour-Tabrizi, Alex; Holt, Ann Julie; mahatha, s.k.; Arnold, Fabian & Bianchi, Marco [Vis alle 12 forfattere av denne artikkelen] (2019). The occupied electronic structure of ultrathin boron doped diamond. arXiv.org. ISSN 2331-8422. 1907, s. 00673–00673. Fulltekst i vitenarkiv
• Mazzola, Federico; Chen, Chin-Yi; Rahman, Rajib; Zhu, Xie-Gang; Polley, Craig & Balasubramanian, Thiagarajan [Vis alle 10 forfattere av denne artikkelen] (2019). The Sub-band Structure of Atomically Sharp Dopant Profiles in Silicon. arXiv.org. ISSN 2331-8422. 1904(10929). doi: 10.1038/s41535-020-0237-1. Fulltekst i vitenarkiv
• Hofmann, Philip; Ugeda, Miguel; Tamtogl, Anton; Ruckhofer, Adrian; Ernst, Wolfgang E & Benedek, Giorgio [Vis alle 13 forfattere av denne artikkelen] (2019). Strong-coupling charge density wave in a one-dimensional topological metal. Physical review B (PRB). ISSN 2469-9950. 99(3). doi: 10.1103/PhysRevB.99.035438. Fulltekst i vitenarkiv
• Bahramy, Mohammed Saeed; Clark, Oliver J.; Yang, Bohm Jung; Feng, Jiagui; Bawden, Lewis & Riley, Jonathon M. [Vis alle 26 forfattere av denne artikkelen] (2018). Ubiquitous formation of bulk Dirac cones and topological surface states from a single orbital manifold in transition-metal dichalcogenides. Nature Materials. ISSN 1476-1122. 17(1), s. 21–27. doi: 10.1038/NMAT5031. Fulltekst i vitenarkiv
• Shen, Kongchao; Sun, Haoliang; Hu, Jinping; Hu, Jinbang; Liang, Zhaofeng & Li, Haiyang [Vis alle 14 forfattere av denne artikkelen] (2018). Fabricating Quasi-Free-Standing Graphene on a SiC (0001) Surface by Steerable Intercalation of Iron. Journal of Physical Chemistry C. ISSN 1932-7447. 122(37), s. 21484–21492. doi: 10.1021/acs.jpcc.8b06789. Fulltekst i vitenarkiv
• Mazzola, Federico; Wells, Justin; Pakpour-Tabrizi, Alex; Jackman, Richard; Thiagarajan, Balusubramanian & Hofmann, Philip [Vis alle 7 forfattere av denne artikkelen] (2018). Simultaneous conduction and valence band quantisation in ultra-shallow, high density doping profiles in semiconductors. arXiv.org. ISSN 2331-8422. Fulltekst i vitenarkiv
• Risinggård, Helene Kjær; Cooil, Simon Phillip; Mazzola, Federico; Hu, Di; Kjærvik, Marit & Østli, Elise Ramleth [Vis alle 12 forfattere av denne artikkelen] (2018). Degradation of the chemotherapy drug 5-fluorouracil on medical-grade silver surfaces. Applied Surface Science. ISSN 0169-4332. 435, s. 1213–1219. doi: 10.1016/j.apsusc.2017.11.221. Fulltekst i vitenarkiv
• Hellsing, Bo; Frederiksen, Thomas; Mazzola, Federico; Balasubramanian, Thiagarajan & Wells, Justin (2018). Phonon-induced linewidths of graphene electronic states. Physical review B (PRB). ISSN 2469-9950. 98:205428(20), s. 1–7. doi: 10.1103/PhysRevB.98.205428. Fulltekst i vitenarkiv
• Mazzola, Federico; Wells, Justin; Pakpour-Tabrizi, Alex; Jackman, Richard; Thiagarajan, Balusubramanian & Hofmann, Philip [Vis alle 7 forfattere av denne artikkelen] (2018). Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors. Physical Review Letters. ISSN 0031-9007. 120(4), s. 046403-1–046403-5. doi: 10.1103/PhysRevLett.120.046403. Fulltekst i vitenarkiv
• Kjeldby, Snorre Braathen; Evenstad, Otto Magnus; Cooil, Simon Phillip & Wells, Justin (2017). Probing dimensionality using a simplified 4-probe method. Journal of Physics: Condensed Matter. ISSN 0953-8984. 29(39). doi: 10.1088/1361-648X/aa8296. Fulltekst i vitenarkiv
• Jorge, Marina; Polyakov, Stanislav; Cooil, Simon Phillip; Schenk, Alex Kevin; Edmonds, Mark & Thomsen, Lars [Vis alle 8 forfattere av denne artikkelen] (2017). Robust p-type doping of copper oxide using nitrogen implantation. Materials Research Express. 4(7). doi: 10.1088/2053-1591/aa7613. Fulltekst i vitenarkiv Vis sammendrag

  We demonstrate robust p-type doping of Cu2O using low/medium energy ion implantation. Samples are made by controlled oxidation of annealed Cu metal foils, which results in Cu2O with levels of doping close to intrinsic. Samples are then implanted with nitrogen ions using a kinetic energy in the few keV range. Using this method, we are able to produce very high levels of doping, as evidenced by a 350 meV shift in the Fermi level towards the VB maximum. The robustness of the nitrogen implanted samples are tested by exposing them to atmospheric contaminants, and elevated temperatures. The samples are found to survive an increase in temperature of many hundreds of degrees. The robustness of the samples, combined with the fact that the materials used are safe, abundant and non-toxic and that the methods used for the growth of Cu2O and N+ implantation are simple and cheap to implement industrially, underlines the potential of Cu2O:N for affordable intermediate band photovoltaics.

• Jorge, Marina; Cooil, Simon Phillip; Edmonds, Mark; Thomsen, Lars; Nematollahi, Mohammadreza & Mazzola, Federico [Vis alle 7 forfattere av denne artikkelen] (2017). Accelerated ageing of molybdenum oxide. Materials Research Express. 4(11). doi: 10.1088/2053-1591/aa9287. Fulltekst i vitenarkiv
• Shen, Kongchao; Narsu, Bai; Ji, Gengwu; Sun, Haoliang; Hu, Jinbang & Liang, Zhaofeng [Vis alle 14 forfattere av denne artikkelen] (2017). On-surface manipulation of atom substitution between cobalt phthalocyanine and the Cu(111) substrate. RSC Advances. 7(23), s. 13827–13835. doi: 10.1039/c7ra00636e. Fulltekst i vitenarkiv Vis sammendrag

  On-surface fabrication of controllable nanostructures is an appealing topic in the field of molecular electronics. Herein, the adsorption of cobalt phthalocyanine (CoPc) on a Cu(111) surface is investigated utilizing a combination of photoelectron spectroscopy (PES) and density functional theory (DFT). Interestingly, the scenario of atom exchange is discovered at the interface at room temperature (RT), namely the substitution of the cobalt atom in CoPc by a surface Cu adatom. Moreover, thermal annealing enhances the substitution process considerably which is demonstrated to be complete at about 573 K. As revealed by DFT calculations, the driving force for the observed interface transmetalation is most probably provided by the initial strong molecular-substrate interaction between Co atoms and the Cu(111) surface, the external thermodynamic energy gained from thermal sublimation and thermal annealing, and the tendency to form Co–Cu alloy at the interface. While CoPc has been successfully utilized in electrocatalysts for fuel cell applications and CuPc is commonly used as a leading material in organic solar cells, this report of interface transmetalation from CoPc to CuPc in a solid state environment may offer an encouraging approach towards the artificial engineering of organometallic nanostructures and related properties for surface catalysts, molecular electronics and so on.

• Cooil, Simon Phillip; Mazzola, Federico; Klemm, Hagen W; Peschel, Gina; Niu, Yuran R & Zakharov, Alexei A [Vis alle 11 forfattere av denne artikkelen] (2017). In Situ Patterning of Ultrasharp Dopant Profiles in Silicon. ACS Nano. ISSN 1936-0851. 11(2), s. 1683–1688. doi: 10.1021/acsnano.6b07359. Fulltekst i vitenarkiv
• Mazzola, Federico; Frederiksen, Thomas; Balasubramanian, Thiagarajan; Hofmann, Philip; Hellsing, Bo & Wells, Justin (2017). Strong electron-phonon coupling in the σ band of graphene. Physical review B (PRB). ISSN 2469-9950. 95(7). doi: 10.1103/PhysRevB.95.075430. Fulltekst i vitenarkiv
• Vinje, Jakob; Falck, Merete; Mazzola, Federico; Cooil, Simon Phillip; Koch, Henrik & Høyvik, Ida-Marie [Vis alle 7 forfattere av denne artikkelen] (2017). Tautomerization of thymine using ultraviolet light. Langmuir. ISSN 0743-7463. 33(38), s. 9666–9672. doi: 10.1021/acs.langmuir.7b02473. Fulltekst i vitenarkiv
• Hofmann, Philip; Ugeda, Miguel; Martınez-Galera, Antonio; Strozecka, Anna; Gomez-Rodrıguez, Jose & Rienks, Emile [Vis alle 9 forfattere av denne artikkelen] (2017). Strong-coupling charge density wave in a one-dimensional topological metal. arXiv.org. ISSN 2331-8422. doi: 10.1103/physrevb.99.035438. Fulltekst i vitenarkiv
• Nowakowska, Sylwia; Mazzola, Federico; Alberti, Mariza N.; Song, Fei; Voigt, Tobias & Nowakowski, Jan [Vis alle 29 forfattere av denne artikkelen] (2017). Adsorbate-Induced Modification of the Confining Barriers in a Quantum Box Array. ACS Nano. ISSN 1936-0851. 12(1), s. 768–778. doi: 10.1021/acsnano.7b07989. Fulltekst i vitenarkiv
• Bawden, L; Cooil, Simon Phillip; Mazzola, Federico; Riley, JM; Collins-Mcintyre, LJ & Sunko, V [Vis alle 16 forfattere av denne artikkelen] (2016). Spin-valley locking in the normal state of a transition-metal dichalcogenide superconductor. Nature Communications. 7. doi: 10.1038/ncomms11711. Fulltekst i vitenarkiv Vis sammendrag

  Metallic transition-metal dichalcogenides (TMDCs) are benchmark systems for studying and controlling intertwined electronic orders in solids, with superconductivity developing from a charge-density wave state. The interplay between such phases is thought to play a critical role in the unconventional superconductivity of cuprates, Fe-based and heavy-fermion systems, yet even for the more moderately-correlated TMDCs, their nature and origins have proved controversial. Here, we study a prototypical example, 2H-NbSe2, by spin- and angle-resolved photoemission and first-principles theory. We find that the normal state, from which its hallmark collective phases emerge, is characterized by quasiparticles whose spin is locked to their valley pseudospin. This results from a combination of strong spin–orbit interactions and local inversion symmetry breaking, while interlayer coupling further drives a rich three-dimensional momentum dependence of the underlying Fermi-surface spin texture. These findings necessitate a re-investigation of the nature of charge order and superconducting pairing in NbSe2 and related TMDCs.

• Cooil, Simon Phillip; Mørtsell, Eva Anne; Mazzola, Federico; Jorge, Marina; Wenner, Sigurd & Edmonds, M T [Vis alle 15 forfattere av denne artikkelen] (2016). Thermal migration of alloying agents in aluminium. Materials Research Express. 3(11). doi: 10.1088/2053-1591/3/11/116501. Fulltekst i vitenarkiv Vis sammendrag

  The in situ thermal migration of alloying agents in an Al–Mg–Si–Li alloy is studied using surface sensitive photo-electron and electron diffraction/imaging techniques. Starting with the preparation of an almost oxide free surface (oxide thickness = 0.1 nm), the relative abundance of alloying agents (Mg, Li and Si) at the surface are recorded at various stages of thermal annealing, from room temperature to melting (which is observed at 550 ◦C). Prior to annealing, the surface abundances are below the detection limit Lt1%, in agreement with their bulk concentrations of 0.423% Si, 0.322% Mg and 0.101% Li (atomic %). At elevated temperatures, all three alloying agents appear at drastically increased concentrations (13.3% Si, 19.7% Mg and 45.3% Li), but decrease again with further elevation of the annealing temperature or after melting. The temperature at which the migration occurs is species dependent, with Li migration occurring at significantly higher temperatures than Si and Mg. The mechanism of migration also appears to be species dependent with Li migration occurring all over the surface but Mg migration being restricted to grain boundaries.

• Bawden, Lewis; Riley, Jonathan; Kim, Choong; Sankar, Raman; monkman, Eric & Shai, Daniel [Vis alle 18 forfattere av denne artikkelen] (2015). Hierarchical spin-orbital polarization of a giant Rashba system. Science Advances. 1(8), s. e1500495–e1500495. doi: 10.1126/sciadv.1500495. Fulltekst i vitenarkiv
• Mazzola, Federico; Nematollahi, Mohammadreza; Li, Zheshen; Cooil, Simon, Phillip; Yang, Xiaodong & Reenaas, Turid Worren [Vis alle 7 forfattere av denne artikkelen] (2015). Resonant photoemission spectroscopy for intermediate band materials. Applied Physics Letters. ISSN 0003-6951. 107:192102(19). doi: 10.1063/1.4935536. Fulltekst i vitenarkiv Vis sammendrag

  Resonant photoemission spectroscopy is used to study the intermediate-band material Cr dopedZnS. Using resonant photoemission, we show that the intermediate-band can be characterized, revealing the filling and specific orbital character of the states contributing to the resonant photoemission signal. We demonstrate that resonant photoemission spectroscopy is a powerful approach for understanding the origin of intermediate bands in dopedZnS. The methodology can be widely extended to a large variety of materials, providing useful information towards engineering of high efficiency intermediate band solar cells and of other optoelectronic devices.

• Cooil, Simon, Phillip; Wells, Justin; Hu, Di; Niu, Yuran; Zakharov, Alexei & Bianchi, Marco [Vis alle 7 forfattere av denne artikkelen] (2015). Controlling the growth of epitaxial graphene on metalized diamond (111) surface. Applied Physics Letters. ISSN 0003-6951. 107:181603(18). doi: 10.1063/1.4935073. Fulltekst i vitenarkiv Vis sammendrag

  The 2-dimensional transformation of the diamond (111) surface to graphene has been demonstrated using ultrathin Fe films that catalytically reduce the reaction temperature needed for the conversion of sp3 to sp2 carbon. An epitaxial system is formed, which involves the re-crystallization of carbon at the Fe/vacuum interface and that enables the controlled growth of monolayer and multilayer graphene films. In order to study the initial stages of single and multilayer graphene growth, real time monitoring of the system was preformed within a photoemission and low energy electron microscope. It was found that the initial graphene growth occurred at temperatures as low as 500 °C, whilst increasing the temperature to 560 °C was required to produce multi-layer graphene of high structural quality. Angle resolved photoelectron spectroscopy was used to study the electronic properties of the grown material, where a graphene-like energy momentum dispersion was observed. The Dirac point for the first layer is located at 2.5 eV below the Fermi level, indicating an n-type doping of the graphene due to substrate interactions, while that of the second graphene layer lies close to the Fermi level.

• Mazzola, Federico; Trinh, Thuat; Cooil, Simon, Phillip; Østli, Elise Ramleth; Høydalsvik, Kristin & Skjønsfjell, Eirik Torbjørn Bakken [Vis alle 12 forfattere av denne artikkelen] (2015). Graphene coatings for chemotherapy: avoiding silver-mediated degradation. 2D Materials. 2(2), s. 025004–025004. doi: 10.1088/2053-1583/2/2/025004. Fulltekst i vitenarkiv
• Bianchi, M; Song, F; Cooil, Simon Phillip; Monsen, Åsmund Fløystad; Wahlström, Erik & Miwa, JA [Vis alle 14 forfattere av denne artikkelen] (2015). One-dimensional spin texture of Bi(441): Quantum spin Hall properties without a topological insulator. Physical Review B. Condensed Matter and Materials Physics. ISSN 1098-0121. 91(16). doi: 10.1103/PhysRevB.91.165307. Fulltekst i vitenarkiv

Se alle arbeider i NVA

• Schenk, Richard Justin; Skarpeid, Alv; Røst, Håkon; Yadav, Rohit; Cooil, Simon Phillip & Wells, Justin William (2026). Modifying the Electronic Structure of Nickel with Antimony Surface Alloys. Fulltekst i vitenarkiv
• Stalsberg, Marte Pedersen; Schenk, Richard Justin; Roberts, Daniel; Rørheim, Adrian Næraa; Moen-Duran, Oliver & Wells, Justin William [Vis alle 7 forfattere av denne artikkelen] (2024). Towards a p-n heterojunction of Ga2O3 and diamond. Fulltekst i vitenarkiv
• Stalsberg, Marte Pedersen; Strand, Frode Sneve; Cooil, Simon Phillip; Campbell, Quinn T.; Flounders, John J. & Røst, Håkon Ivarssønn [Vis alle 10 forfattere av denne artikkelen] (2024). A 2D electron gas by shallow Sb doping in Si for use in Quantum Devices. Fulltekst i vitenarkiv
• Wells, Justin William (2024). Tunable Electron-Phonon Coupling in Hexagonal Boron Nitride. Fulltekst i vitenarkiv
• Stalsberg, Marte Pedersen; Wells, Justin William & Cooil, Simon Phillip (2024). Towards a p-n Heterojunction from Ga2O3 and Diamond. Fulltekst i vitenarkiv
• Åsland, Anna Cecilie; Cooil, Simon Phillip; Mamedov, Damir; Røst, Håkon Ivarssønn; Bakkelund, Johannes & Karazhanov, Smagul [Vis alle 7 forfattere av denne artikkelen] (2024). Initial Stages of Water Absorption on CeO2 Surfaces at Very Low Temperatures for Understanding Anti-Icing Coatings. Fulltekst i vitenarkiv
• Jensen, Ingvild Julie Thue; Thøgersen, Annett; Cooil, Simon Phillip; Wells, Justin William; Prytz, Øystein & Wenckstern, Holger Von (2023). Bandgap and band offset engineering in κ-Ga2O3-based thin films (Invited talk)). Fulltekst i vitenarkiv
• Tosi, Ezequiel; Strand, Frode Sneve; Åsland, Anna Cecilie; Lacovig, Paolo; Lizzit, Silvano & Wells, Justin William (2023). Probing the Atomic Arrangement of Sub-Surface Dopants in a Silicon Quantum Device Platform. Fulltekst i vitenarkiv Vis sammendrag

  Recently, efforts to realize a silicon-based, CMOS-compatible quantum computer have been intensifying. Central to its development are so-called Si:P δ-layers: i.e., ultra-sharp layers of phosphorus atoms placed beneath the silicon surface. Until recently, one key property has remained elusive: the arrangement of the P dopants within the δ-layer. The answer to this question is of crucial importance, as the dopant arrangement will directly impact the energy separation (i.e., valley-splitting) of the supported quantum well states. In this talk, we will demonstrate how the local neighborhood around encapsulated dopants in a bulk semiconductor can be directly probed using X-ray photoelectron diffraction (XPD). By utilizing subtle core level energy shifts that are concomitant with the coordination of a dopant, chemically specific diffractive images can be formed. Through comparison with XPD simulations that are derived from models of the local atomic environment around the dopants, the true dopant atom placement can be ascertained. Typically, XPD is only used as a probe of surface structure. We demonstrate here that – under the right conditions, it also can be used to determine the local arrangement of sub-surface atoms. Therefore, XPD is well suited for solving the long-standing mystery of the Si:P δ-layer structure.

• Røst, Håkon; Tosi, Ezequiel; Strand, Frode Sneve; Åsland, Anna Cecilie; Lacovig, Paolo & Lizzit, Silvano [Vis alle 7 forfattere av denne artikkelen] (2023). Determining the Arrangement of Subsurface Dopants in a Silicon Quantum Device Platform. Fulltekst i vitenarkiv
• Stalsberg, Marte Pedersen; Strand, Frode Sneve; Cooil, Simon Phillip; Campbell, Quinn T.; Flounders, John J. & Røst, Håkon Ivarssønn [Vis alle 10 forfattere av denne artikkelen] (2023). Atomically Sharp and High-Density Sb Doping in Si for use in Quantum Devices. Fulltekst i vitenarkiv
• Pacáková, Barbara; Matejdes, Marian; Wagner, Daniel; Brito, Paulo Henrique Michels; Seljelid, Konstanse Kvalem & Miranda, Leander Edward Michels Brito [Vis alle 10 forfattere av denne artikkelen] (2023). SYNCHRONOUS SYNTHESIS OF NITROGEN-DOPED GRAPHENE AND CARBON NANOTUBES IN A NANOLAYERED SILICATE. Fulltekst i vitenarkiv
• Pacáková, Barbara; Matejdes, Marian; Wagner, Daniel; Brito, Paulo Henrique Michels; Seljelid, Konstanse Kvalem & Miranda, Leander Edward Michels Brito [Vis alle 10 forfattere av denne artikkelen] (2023). Carbon Nanotubes and Graphene Flakes Grown Synchronously in the Confined 2D Nanospace of a Layered Silicate . Fulltekst i vitenarkiv
• Pacáková, Barbara; Matejdes, Marian; Wagner, Daniel; Brito, Paulo Henrique Michels; Seljelid, Konstanse Kvalem & Michels, Leander [Vis alle 10 forfattere av denne artikkelen] (2022). Graphene confined in layered silicate. Fulltekst i vitenarkiv
• Pacáková, Barbara; Matejdes, Marian; Wagner, Daniel; Brito, Paulo Henrique Michels; Seljelid, Konstanse Kvalem & Michels, Leander [Vis alle 10 forfattere av denne artikkelen] (2022). Graphene confined in layered silicate. Fulltekst i vitenarkiv
• Pacáková, Barbara; Matejdes, Marian; Wagner, Daniel; Brito, Paulo Henrique Michels; Seljelid, Konstanse Kvalem & Michels, Leander [Vis alle 10 forfattere av denne artikkelen] (2022). Carbon Nanotubes and Graphene Flakes Grown Synchronously in the Confined 2D Nanospace of a Layered Silicate. Fulltekst i vitenarkiv
• Mæland, Kristian; Røst, Håkon Ivarssønn; Wells, Justin W & Sudbø, Asle (2022). S68.00011: Electron-magnon coupling and quasiparticle lifetimes on the surface of a topological insulator. Fulltekst i vitenarkiv
• Jacobsen, Sol; Brataas, Arne & Wells, Justin W (2021). Presentation of QuSpin, for Technoport Tech Dives. Fulltekst i vitenarkiv
• Mæland, Kristian; Røst, Håkon; Wells, Justin William & Sudbø, Asle (2021). Electron-magnon coupling and quasiparticle lifetimes on the surface of a topological insulator. Fulltekst i vitenarkiv
• Wells, Justin (2019). Angle Resolved UPS, general introduction and its possibilities. Fulltekst i vitenarkiv
• Wells, Justin (2019). "The Electronic Bandstructure of Atomically Sharp Dopant Structures in Silicon". Fulltekst i vitenarkiv
• Wells, Justin (2019). Carrots, Meteorites and Quantum Mechanics. Fulltekst i vitenarkiv
• Sunding, Martin Fleissner; Jensen, Ingvild Julie Thue; Svenum, Ingeborg-Helene; Ivashenko, Oleksii; Redekop, Evgeniy & Wells, Justin [Vis alle 11 forfattere av denne artikkelen] (2019). National Surface and Interface Analysis Laboratory (NICE II): From (near) in-situ to operando XPS analysis. Fulltekst i vitenarkiv
• Chellappan, Rajesh Kumar; Cooil, Simon Phillip; Dahl, Oystein & Wells, Justin (2019). Insitu study of graphene patterning on SiC. Fulltekst i vitenarkiv
• Wells, Justin (2018). Engineering novel 2D materials for quantum device applications. Fulltekst i vitenarkiv
• Wells, Justin (2018). Exploring the nanoscale playground; from cancer therapy to quantum computing. Fulltekst i vitenarkiv
• Wells, Justin (2018). Probing the electron-phonon interaction in graphene: an experimental perspective. Fulltekst i vitenarkiv
• Wells, Justin (2018). Exploring the electronic structure of artificial 2D metals; a novel playground for experimentalists. Fulltekst i vitenarkiv
• Wells, Justin (2018). Graphene and silicon: creating and understanding 2D structures and properties using silicon-compatible fabrication. Fulltekst i vitenarkiv
• Wells, Justin (2018). Understanding thermal migration of alloying agents. Fulltekst i vitenarkiv
• Wells, Justin (2018). The electronic band structure of delta doped silicon. Fulltekst i vitenarkiv
• Røst, Håkon Ivarssønn; Chellappan, Rajesh Kumar; Tadich, Anton; Dahl, Øystein & Wells, Justin (2018). Preparation of Transfer-Free Graphene on Insulator for Novel Electronic Devices. Fulltekst i vitenarkiv
• Schenk, Alex Kevin; Pakpour-Tabrizi, Alex; Mazzola, Federico; Holt, Ann Julie; Nyborg, Thomas & Cooil, Simon Phillip [Vis alle 13 forfattere av denne artikkelen] (2018). Using ARPES as a tool for exploring quantisation in delta-doped silicon and diamond. Fulltekst i vitenarkiv
• Chellappan, Rajesh Kumar; Cooil, Simon Phillip; Dahl, Oystein & Wells, Justin (2018). Transition metal mediated growth of epitaxial graphene on SiC and intercalation of SiOx for radiation sensing application. Fulltekst i vitenarkiv
• Vinje, Jakob; Beckwith, Kai Sandvold; Cooil, Simon Phillip; Wells, Justin & Sikorski, Pawel (2017). Nano-structuring and controlled surface chemistry for cell-studies and biomedical applications. Fulltekst i vitenarkiv
• Vinje, Jakob; Beckwith, Kai Sandvold; Cooil, Simon Phillip; Wells, Justin & Sikorski, Pawel (2017). Nano-structured surfaces and controlled surface chemistry for cell studies. Fulltekst i vitenarkiv
• Wells, Justin (2017). In Situ Patterning of Ultrasharp Dopant Profiles in Silicon. Fulltekst i vitenarkiv
• Chellappan, Rajesh Kumar; Cooil, Simon; Dahl, Oystein & Wells, Justin (2017). In-situ study of graphene patterning on SiC. Fulltekst i vitenarkiv
• Michels, Leander; Patil, Nilesh; Cooil, Simon, Phillip; Coucheron, David Andre; Fokine, Michael & Schleputz, Christian [Vis alle 9 forfattere av denne artikkelen] (2016). SiGe in confined fiber geometry. Fulltekst i vitenarkiv
• Jorge, Marina; Wells, Justin; Polyakov, Stanislav; Nematollahi, Mohammadreza & Cooil, Simon (2016). A new generation of abundant and low-toxicity photovoltaic materials. Fulltekst i vitenarkiv
• Wells, Justin (2015). Engineering metallic states in silicon for quantum computation applications. Fulltekst i vitenarkiv
• Wells, Justin (2015). Graphene coatings for chemotherapy; Avoiding silver-mediated degradation. Fulltekst i vitenarkiv
• Wells, Justin (2015). Photoelectron Spectroscopies. Fulltekst i vitenarkiv
• Wells, Justin (2015). The ever expanding photoemission toolbox. Fulltekst i vitenarkiv
• Wells, Justin (2015). Supermaterialet grafén kan gi bedre kreftbehandling. [Journal]. Gemini. Fulltekst i vitenarkiv
• Wells, Justin (2015). Towards designer 2D materials. Fulltekst i vitenarkiv
• Wells, Justin (2015). Catheter studies raise acid alert. Nanotechweb.org. Fulltekst i vitenarkiv
• Wells, Justin (2015). Electron phonon mediated transitions in 2D materials; towards a designer superconductor? Fulltekst i vitenarkiv
• Wells, Justin (2015). The ever expanding photoemission toolbox. Fulltekst i vitenarkiv
• Wells, Justin (2015). Some things you thought you knew, and some things you probably didn’t - a physicists view of the world. Fulltekst i vitenarkiv
• Wells, Justin (2015). KVANTEDATAMASKINER: Så viktig er gjennombruddet i kvantedatamaskiner. [Journal]. Teknisk Ukeblad. Fulltekst i vitenarkiv
• Wells, Justin (2015). Improving the delivery of chemotherapy with graphene. Institute of Physics Newsletter. doi: 10.1088/2053-1583/2/2/025004. Fulltekst i vitenarkiv
• Wells, Justin (2015). Avoiding degradation of chemotherapy drugs: Is graphene the answer? Nanomedicine. ISSN 1743-5889. 10(22), s. 3307–3310. doi: 10.2217/nnm.15.142. Fulltekst i vitenarkiv

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