Publications

We have organized a selection of our publications according to their thematic areas. Reprints of most publications can be provided by an e-mail to the group responsible.

Organic- inorganic hybrid materials / MLD growth

Organic- inorganic hybrid materials are one of the core materials because it offers the freedom to construct materials in a manner resembling the LEGO principle. This was first demonstrated at the BALD 2004 conference which cumulated in the patent application published in 2006. The large versatility in the number of possible linkers, combined with the range of possible metal centres which can be applied in construction of such materials makes this an endless class of possible materials. We have chosen to focus mainly on linkers of carboxylic acids because these most often result in materials stable towards ambient conditions. However, we are also pursuing numerous different other types of linkers and metal centres.

Articles:

  • K.B. Klepper, O. Nilsen, S. Francis, H. Fjellvåg, Guidance of growth mode and structural character in organic-inorganic hybrid materials - a comparative study Dalton Transactions 43 (2014) 3492-3500.
  • O. Nilsen, K.R. Haug, T. Finstad, H. Fjellvåg, Molecular Hybrid Structures by Atomic Layer Deposition–Deposition of Alq3, Znq2 and Tiq4 (q= 8‐hydroxyquinoline). Chemical Vapor Deposition. (2013).
  • M. Leskelä, M. Ritla, O. Nilsen, Novel materials by atomic layer deposition and molecular layer deposition, MRS Bulletin 36 (2011) 877-884.
  • K.B. Klepper, O. Nilsen, T. Levy, H. Fjellvåg, Atomic Layer Deposition of Organic-Inorganic Hybrid Materials Based on Unsaturated Linear Carboxylic Acids, European Journal of Inorganic Chemistry 34 (2011) 5305-5312.
  • K. B. Klepper, O. Nilsen, P-A. Hansen, H. Fjellvåg, Atomic layer deposition of organic-inorganic hybrid materials based on saturated linear carboxylic acids, Dalton Transactions 40 (2011) 4636-4646.
  • K. Klepper, O. Nilsen, H. Fjellvåg. Deposition of thin films of organic-inorganic hybrid materials based on aromatic carboxylic acids by atomic layer deposition, Dalton Transactions 39 (2010) 11628-11635.
  • O. Nilsen, K.B. Klepper, H.O. Nielsen, H. Fjellvåg, Deposition of organic- inorganic hybrid materials by atomic layer deposition, ECS Transactions 16 (2008) 3-14. 

Patent applications:

  • O. Nilsen, H. Fjellvåg, Thin films prepared with gas phase deposition technique., PCT Int. Appl.  (2006),  42 pp.  WO  2006071126
  • O. Nilsen, H. Fjellvåg, Activation of surfaces through gas phase reactions, PCT Int. Appl. (2006), 38 pp. WO  2007-NO217  20070619
  • O. Nilsen, H. Fjellvåg Atomic layer chemical vapor deposition with in situ synthesis of molecular metalorganic compounds and uses of the resulting films, PCT Int. Appl. (2008), 25 pp. WO  2008-NO99  20080314

Modelling the evolution of texture in ALD growth

Films deposited by the ALD technique may be both amorphous, polycrystalline and epitaxial. The growth and evolution in texture will depend on the type of growing crystallites and their interaction with the substrate. By deliberate choice in precursor and deposition conditions, it is possible to tune the texture between different preferred orientations or complete amorphous growth. Epitaxial growth is also affected by the type of precursor combinations with the result that both stable and unstable types of epitaxial growth systems exist.

  • O. Nilsen, O.B. Karlsen, A. Kjekshus, H. Fjellvåg, Simulation of growth dynamics for nearly epitaxial films. Journal of Crystal Growth, 308 (2007) 366.
  • O. Nilsen, C.E. Mohn, A. Kjekshus, H. Fjellvåg, Analytical model for island growth in atomic layer deposition using geometrical principles. Journal of Applied Physics, 102 (2007) 024906.
  • O. Nilsen, O.B. Karlsen, A. Kjekshus, H. Fjellvåg, Simulation of growth dynamics in atomic layer deposition. Part III. Polycrystalline films from tetragonal crystallites, Thin Solid Films, 515 (2007) 4550.
  • O. Nilsen, O.B. Karlsen, A. Kjekshus, H. Fjellvåg, Simulation of growth dynamics in atomic layer deposition. Part II. Polycrystalline films from cubic crystallites, Thin Solid Films, 515 (2007) 4538.
  • O. Nilsen, O.B. Karlsen, A. Kjekshus, H. Fjellvåg, Simulation of growth dynamics in atomic layer deposition. Part I. Amorphous films, Thin Solid Films, 515 (2007) 4527.

Complex oxides

The ALD technique is mainly used for deposition of binary compounds, however, the technique is also most applicable for deposition of more complex stoichiometries with good control of composition and uniformity. We have developed a tool for deposition of complex compositions based on utilisation of surface and can aid the mapping of precursor dependencies by taking basis in a few selected depositions.

  • K. Bergum, A. Magraso, H. Fjellvåg, O. Nilsen, Thin film fabrication and characterization of proton conducting lanthanum tungstate Journal of Materials Chemistry A: Materials for Energy and Sustainability (2014), Ahead of Print.
  • H.H. Sønsteby, E. Østreng, H. Fjellvåg, O. Nilsen, Atomic Layer Deposition of LaPO4 and Ca:LaPO4 Chemical Vapor Deposition 20 (2014) 269-273.
  • J. E. Bratvold, H. Fjellvåg, O. Nilsen Atomic layer deposition of oriented nickel titanate (NiTiO3) Applied Surface Science 311 (2014) 478-483.
  • H. H. Sønsteby, E. Østreng, H. Fjellvåg, O. Nilsen, Deposition and x-ray characterization of epitaxial thin films of LaAlO3, Thin Solid Films 550 (2014) 90.
  • E. Østreng, H.H. Sønsteby, T., Sajavaara, O. Nilsen, H. Fjellvåg, Atomic Layer Deposition of Ferroelectric LiNbO3. J. Mater. Chem. C. (2013).
  • H. H. Sønsteby, E. Østreng, H. Fjellvåg, O. Nilsen, Deposition and x-​ray characterization of epitaxial thin films of LaAlO3, Thin Solid Films, Ahead of Print.
  • V. Miikkulainen, O. Nilsen, M. Laitinen, T. Sajavaara, H. Fjellvåg, Atomic layer deposition of LixTiyOz thin films, RSC Advances, 3 (2013) 7537-7542.
  • S.D. Elliott, O. Nilsen, Reaction mechanisms in ALD of ternary oxides ECS Transactions 41 (2011) 175-183.
  • M. Diskus, M. Balasundaram, O. Nilsen, H. Fjellvåg, Influence of precursors chemistry on ALD growth of cobalt-molybdenum oxide films Dalton Transactions 41 (2012) 2439-2444.
  • T. Aaltonen, O. Nilsen, A. Magraso, H. Fjellvåg, Atomic Layer Deposition of Li2O-Al2O3 Thin Films Chemistry of Materials 23 (2011) 4669-4675.
  • M. Lie, O. Nilsen, H. Fjellvåg, A. Kjekshus, Growth of La1-xSrxFeO3 thin films by atomic layer deposition Dalton Transactions  3 (2009) 481-489. 
  • T. Aaltonen, M. Alnes, O. Nilsen, L. Costelle, H. Fjellvåg, Lanthanum titanate and lithium lanthanum titanate thin films grown by atomic layer deposition, Journal of Materials Chemistry 20 (2010) 2877-2881.
  • M. Lie, K.B. Klepper, O. Nilsen , A. Kjekshus, H. Fjellvåg, Growth of iron cobalt oxides by atomic layer deposition, Dalton Transaction, (2008) 253
  • O. Nilsen; E. Rauwel; H. Fjellvåg; A. Kjekshus, Growth of La1–xCaxMnO3 thin films by atomic layer deposition, Journal of Materials Chemistry, 17 (2007) 1466-1475 (Hot).
  • O. Nilsen, M. Lie, A. Kjekshus, H. Fjellvåg, Growth of oxides with complex stoichiometry by the ALD technique - Exemplified by growth of La1–xCaxMnO3, Topics in Applied Physics, Vol 106 (2006) 87.
  • O. Nilsen, M. Peussa, H. Fjellvåg, L. Niinistö, A. Kjekshus, Thin film deposition of lanthanum manganite perovskite by the ALE process, Journal of Materials Chemistry 9 (1999) 1781-1784.
  • H. Seim, M. Nieminen, L. Niinistö, H. Fjellvåg, L-.S. Johansson, Growth of LaCoO3 thin films from b-diketonate precursors, Applied Surface Science, 112 (1997) 243-250.
  • H. Seim, H. Mölsä, M. Nieminen, H. Fjellvåg, L. Niinistö, Deposition of LaNiO3 thin films in an atomic layer epitaxy reactor, Journal of Materials Chemistry, 7 (1997) 449-454.

The insight into growth of complex oxides is based on knowledge about the binary processes. Some of the binary processes studied at UiO are:

  • E. Østreng, H.H. Sønsteby, S. Øien, O. Nilsen, H. Fjellvåg, Atomic layer deposition of sodium and potassium oxides: evaluation of precursors and deposition of thin films Dalton Transactions 43 (2014) 16666-16672.
  • P.A. Hansen, H. Fjellvåg, T. Finstad, O. Nilsen, Structural and optical properties of lanthanide oxides grown by atomic layer deposition (Ln= Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb).  Dalton Trans. (2013).
  • M. Diskus, O. Nilsen, H. Fjellvåg, S. Diplas, P. Beato, C. Harvey, L.E. van Schrojenstein, B.M. Weckhuysen, Combination of characterization techniques for atomic layer deposition MoO3 coatings: From the amorphous to the orthorhombic α-MoO3 crystalline phase Journal of Vacuum Science & Technology, A: Vacuum, Surfaces, and Films 30 (2012) 01A107/1-01A107/6.
  • M. Diskus, O. Nilsen, H. Fjellvåg, Growth of thin films of molybdenum oxide by atomic layer deposition, Journal of Materials Chemistry 21 (2011) 705-710
  • O. Nilsen, S. Foss, A. Kjekshus, H, Fjellvåg, Growth of Nano-Needles of Manganese(IV) Oxide by Atomic Layer Deposition, Journal of Nanoscience and Nanotechnology. 8 (2008) 1003.
  • K.B. Klepper, O. Nilsen, H. Fjellvåg, Epitaxial growth of cobalt oxide by atomic layer deposition, Journal of Crystal growth, 307 (2007) 457.
  • K.B. Klepper, O. Nilsen, H. Fjellvåg, Growth of thin films of Co3O4 by atomic layer deposition, Thin Solid Films, 515 (2007) 7772.
  • S. Foss, O. Nilsen, A. Olsen, J. Tafto, Structure determination of MnO2 films grown on single crystal a-Al2O3 substrates, Philosophical Magazine 85 (2005) 2689.
  • O. Nilsen, M. Lie, S. Foss, H. Fjellvåg, A. Kjekshus, Effect of magnetic field on the growth of a-Fe2O3 thin films by atomic layer deposition. Applied Surface Science 227 (2004) 40-47.
  • O. Nilsen. H. Fjellvåg. A. Kjekshus, Effect of substrate on the characteristics of manganese(IV) oxide thin films prepared by atomic layer deposition, Thin Solid Films, 468 (2004) 65-74.
  • O. Nilsen. H. Fjellvåg, A. Kjekshus, Growth of calcium carbonate by the atomic layer chemical vapour deposition technique, Thin Solid Films, 450 (2004) 240-247.
  • O. Nilsen, H. Fjellvåg, A. Kjekshus, Growth of manganese oxide thin films by atomic layer deposition, Thin Solid Films, 444 (2003) 44-51.
  • R. Haugsrud, A. E. Gunnæs, O. Nilsen, High-Temperature Oxidation of Ni Coated with La2O3 by Atomic-Layer Chemical-Vapor Deposition (ALCVD), Oxidation of Metals, 59 (2003) 215-232.
  • M. Lie, H. Fjellvåg, A. Kjekshus, Growth of Fe2O3 thin films by atomic layer deposition, Thin Solid Films 488, 74-81.

Patent application:

  • O. Nilsen, H. Fjellvåg, M. Diskus, Thin films containing molybdenum oxide, PCT Int. Appl. (2010), WO 2010114386 A1 20101007.

Battery materials

We have since 2006 had an increasing focus on application of thin films in battery related research. Our prime focus is to develop processes for deposition lithium containing materials by ALD. This is a class of materials bringing in several challenges otherwise not seen in ALD processes. Lithium is a monovalent material bringing with it typically only one ligand. In addition to this, lithium is a small cation capable of rapid diffusion throughout the film during deposition. One of the major challenges is therefore to assure self-limiting growth during deposition. Lithium also forms relatively bacidic and reactive oxides which frequently result in subsequent reactions with ambient air after deposition. This raises numerous practical challenges in characterisation of the products.

By mastering deposition of lithium containing materials, we are able to deposit numerous electrochemically active materials important for Li-ion batteries, both as model systems and as active materials in all solid state microbatteries. Our aim is to achieve fully functional 3D structured all-solid-state microbatteries, as well as model systems enabling studies of effects at the interfaces between materials in bulk batteries.

  • V. Miikkulainen, O. Nilsen, H. Li, S.W. King, M. Laitinen, T. Sajavaara, H. Fjellvåg, Atomic layer deposited lithium aluminum oxide: (In)dependency of film properties from pulsing sequence Journal of Vacuum Science & Technology, A: Vacuum, Surfaces, and Films (2014), Ahead of Print.
  • E. Østreng, K.B. Gandrud, Y. Hu, O. Nilsen, H. Fjellvåg, High power nano-structured V2O5 thin film cathodes by atomic layer deposition Journal of Materials Chemistry A: Materials for Energy and Sustainability 2 (2014) 15044-15051.
  • V. Miikkulainen, A. Ruud, E. Østreng, O. Nilsen, M. Laitinen, T. Sajavaara, H. Fjellvåg, Atomic Layer Deposition of Spinel Lithium Manganese Oxide by Film-Body-Controlled Lithium Incorporation for Thin-Film Lithium-Ion Batteries Journal of Physical Chemistry C 118 (2014) 1258-1268.
  • O. Nilsen, V. Miikkulainen, K.B. Gandrud, E. Østreng, A. Ruud, H. Fjellvåg, Atomic layer deposition of functional films for Li-​ion microbatteries. Physica Status Solidi (a) applications and materials science (2013)
  • V. Miikkulainen, A. Ruud, E. Østreng, O. Nilsen, T. Sajavaara; M. Laitinen, H. Fjellvåg, Atomic Layer Deposition of Spinel Lithium Manganese Oxide by Film-​Body-​Controlled Lithium Incorporation for Thin-​Film Lithium-​Ion Batteries. The Journal of Physical Chemistry C (2013)
  • K. B. Gandrud, A. Pettersen, O. Nilsen, H. Fjellvåg, High-​performing iron phosphate for enhanced lithium ion solid state batteries as grown by atomic layer deposition,  J. Mater. Chem. A. 1 (2013), 9054-9059.
  • V. Miikkulainen, O. Nilsen, M. Laitinen, T. Sajavaara, H. Fjellvåg, Atomic layer deposition of LixTiyOz thin films, RSC Advances, 3 (2013) 7537-7542.
  • E. Østreng, O. Nilsen, H. Fjellvåg, Optical Properties of Vanadium Pentoxide Deposited by ALD, Journal of Physical Chemistry C 116 (2012) 19444-19450.
  • E. Østreng, P. Vajeeston, O. Nilsen, H. Fjellvåg, Atomic layer deposition of lithium nitride and carbonate using lithium silylamide, RSC Advances 2 (2012) 6315-6322.
  • T. Aaltonen, V. Miikkulainen, K.B. Gandrud, A. Pettersen, O. Nilsen, H. Fjellvåg,
  • ALD of thin films for lithium ion batteries, ECS Transactions 41 (2011) 331-339.
  • T. Aaltonen, O. Nilsen, A. Magraso, H. Fjellvåg, Atomic Layer Deposition of Li2O-Al2O3 Thin Films, Chemistry of Materials 23 (2011) 4669-4675.
  • T. Aaltonen, M. Alnes, O. Nilsen, L. Costelle, H. Fjellvåg, Lanthanum titanate and lithium lanthanum titanate thin films grown by atomic layer deposition, Journal of Materials Chemistry 20 (2010) 2877-2881.
  • M. Putkonen, T. Aaltonen, M. Alnes, T. Sajavaara, O. Nilsen, H. Fjellvåg, Atomic layer deposition of lithium containing thin films,  Journal of Materials Chemistry, 19 (2009) 8767.

Patent application:

  • O. Nilsen, H. Fjellvåg, M.E. Alnes, T. Aaltonen. Formation of a lithium comprising structure on a substrate by atomic layer deposition. PCT Int. Appl.  (2009), 26pp.  WO  2009084966

Nanostructures

The ALD technique is most applicable for construction of nanostructured materials in form of multi-layered thin films and coatings on nanoparticles. This has been demonstrated through some of the current projects where, among others, growths of needles of manganese oxide have been growth purely by ALD provoked by the choice of substrate.

  • E. Rauwel, O. Nilsen, P. Rauwel, J.C. Walmsley, H. B. Frogner, E. Rytter, H. Fjellvåg, Oxide Coating of Alumina Nanoporous Structure Using ALD to Produce Highly Porous Spinel Chem. Vap. Deposition 18 (2012) 315-325.
  • E. Rauwel, O. Nilsen, A. Galeckas, J.C. Walmsley, E. Rytter, H. Fjellvåg, ALD applied to conformal coating of nanoporous γ-alumina: spinel formation and luminescence induced by europium doping ECS Transactions 41 (2011) 123-130.
  • E. Rauwel, A. Galeckas, P. Rauwel, O. Nilsen, J.C. Walmsley, E. Rytter, H. Fjellvåg, ALD applied to conformal coating of nanoporous γ-alumina: spinel formation and luminescence induced by europium doping Journal of the Electrochemical Society 159 (2012) P45-P49.
  • M. Diskus, O. Nilsen, H. Fjellvåg, “Thin films of cobalt oxide deposited on high aspect ratio supports by atomic layer deposition” Chemical Vapor Deposition 17 (2011) 135.
  • O. Nilsen, S. Foss, A. Kjekshus, H, Fjellvåg Growth of Nano-Needles of Manganese(IV) Oxide by Atomic Layer Deposition, Journal of Nanoscience and Nanotechnology. 8 (2008) 1003.

 

Materials for photovoltaics

Photovoltaics (PV) is a large field covering basic silicon types solar cells, to more novel structures based on oxides. All these technologies may benefit from thin coatings. We have therefore several projects related to such materials. Or projects related to PV have focused on development of p-type TCO materials (CONE), efficient n-type ZnO materials (EMALD, CONE), and optical conversion materials (FME-Sol).

  • K. Bergum, H. Fjellvåg, O. Nilsen, Thickness dependent structural, optical and electrical properties of Ti-doped ZnO films prepared by atomic layer deposition Applied Surface Science (2015), Ahead of Print.
  • P-A. Hansen, H. Fjellvåg, T.G. Finstad, O. Nilsen Luminescent Properties of Multilayered Eu2O3 and TiO2 Grown by Atomic Layer Deposition Chemical Vapor Deposition 20 (2014) 274-281.
  • K. Bergum, P-.A. Hansen, H. Fjellvåg, O. Nilsen, Structural, electrical and optical characterization of Ti-doped ZnO films grown by atomic layer deposition Journal of Alloys and Compounds 616 (2014) 618-624.
  • P-A. Hansen, H. Fjellvåg, T.G. Finstad, O. Nilsen Luminescence properties of europium titanate thin films grown by atomic layer deposition RSC Advances 4 (2014), 11876-11883.
  • P.A. Hansen, H. Fjellvåg, T. Finstad, O. Nilsen, Structural and optical properties of lanthanide oxides grown by atomic layer deposition (Ln= Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb).  Dalton Trans. (2013).
  • V. Quemener, M. Alnes, L. Vines, P. Rauwel, O. Nilsen, H. Fjellvåg, E.V. Monakhov, B.G. Svensson The work function of n-ZnO deduced from heterojunctions with Si prepared by ALD Journal of Physics D: Applied Physics 45 (2012) 315101/1-315101/5.
  • M.E. Alnes, E. Monakhov, H. Fjellvåg, O. Nilsen, Atomic Layer Deposition of Copper Oxide using Copper(II) Acetylacetonate and Ozone Chemical Vapor Deposition 18 (2012) 173-178.
  • V. Quemener, M. Alnes, L. Vines, O. Nilsen, H. Fjellvåg, E.V. Monakhov, B.G. Svensson, Electronic properties of ZnO/Si heterojunction prepared by ALD Diffusion and Defect Data--Solid State Data, Pt. B: Solid State Phenomena 178-179 (2011) 130-135.
  • O. Nilsen, R. Balasundaraprabhu, E.V. Monakhov, N. Muthukumarasamy, H. Fjellvåg, B.G. Svensson, ”Thin films of In2O3 by atomic layer deposition using In(acac)3.” Thin Solid Films 517 (2009) 6320-6322.
  • R. Balasundaraprabhu, E.V. Monakhov, N. Muthukumarasamy, O. Nilsen, B.G. Svensson, Effect of heat treatment on ITO film properties and ITO/p-Si interface. Materials Chemistry and Physics 114 (2009) 425-429. 

Patent applications:

  • O. Nilsen, H. Fjellvåg, A. Ulyashin, Method of depositing a doped zinc oxide film, a conductive zinc oxide film and use of the doped zinc oxide film.  PCT Int. Appl. (2009),     26pp.  WO  2009075585
  • E. Østreng, O. Nilsen, H. Fjellvåg, Proton, or mixed proton and electronic conducting thin films, PCT Int. Appl. (2011), WO 2011119041 A1 20110929.

Characterisation techniques

We are frequently using QCM as in situ characterisation tool to obtain additional information of the growing systems. However, we have also applied measurements of the electrical properties of the film under growth enabling information of island formation. We have also developed an in situ thermopile capable of measuring the heat evolved during single reactions between surface and precursor in gas phase as well as a convenient thermal gradation furnace for characterisation of thermal decomposition of precursors.

  • H.H.  Sonsteby, D. Chernyshov, M. Getz, O. Nilsen, H. Fjellvåg, On the application of a single-​crystal κ-​diffractometer and a CCD area detector for studies of thin films J. Synchrotron Radiation 20 (2013), 644-647. 
  • O. Nilsen, H. Fjellvåg, Measuring the heat evolved from individual reaction steps in atomic layer deposition, Journal of Thermal Analysis and Calorimetry DOI: 10.1007/s10973-011-1630-6
  • O. Nilsen, H. Fjellvåg, A. Kjekshus, Inexpensive set-up for determination of decomposition temperature for volatile compounds, Thermochimica acta, 404 (2003) 187-192.

Physical characterization

We have the benefit of strong collaboration with research groups within physics as UiO, which has led to the following publications.

  • P. Sobas, O. Nilsen, H. Fjellvåg, B.G. Svensson, Electrical properties and gas sensing characteristics of the Al2O3/4H-SiC interface studied by impedance spectroscopy, Materials Science Forum 645-548 (2010) 531-534
  • U. Grossner, M. Avice, S. Diplas, A. Thogersen, J.S. Christensen, B.G. Svensson, O. Nilsen, H. Fjellvåg, J.F. Watts, Influence of annealing on the Al2O3/4H-SiC interface. Materials Science Forum 600-603 (2009) 767-770.
  • S. Diplas, M. Avice, A. Thoegersen, J.S. Christensen, U. Grossner, B.G. Svensson, O. Nilsen, H. Fjellvåg, S. Hinder, J.F. Watts, Interfacial studies of Al2O3 deposited on 4H-SiC(0001) Surface and Interface Analysis  40 (2008) 822-825.   
  • U. Grossner, M. Servidori, M. Avice, O. Nilsen, H. Fjellvåg, R. Nipoti, B. G. Svensson, X-ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC, Materials Science Forum, 556-557 (2007) 683.
  • M. Avice, S. Diplas, A. Thøgersen, J.S. Christensen, U. Grossner, B.G. Svensson, O. Nilsen, H. Fjellvåg, J.F. Watts, Rearrangement of the oxide-semiconductor interface in annealed Al2O3/4H-SiC structures. Applied Physics Letters 91 (2007) 052907.
  • M. Avice, U. Grossner, I. Pintilie, B.G. Svensson, M. Servidori, R. Nipoti, O. Nilsen, H. Fjellvåg, Electrical properties of Al2O3/4H-SiC structures grown by atomic layer chemical vapor deposition. Journal of Applied Physics 102 (2007) 054513.
  • M. Avice, U. Grossner, O. Nilsen, H. Fjellvåg, B. G. Svensson, The Al2O3/4H-SiC Interface Ivestigated by Thermal Dielectric Relaxation Current Technique”, Materials Science Forum, 556-557 (2007) 537.
  • M. Avice, U. Grossner, O. Nilsen, J.S. Christensen, H. Fjellvåg, B.G. Svensson, Annealing study of H2O and O3 grown Al2O3 deposited by atomic layer chemical vapour deposition on n-type 4H-SiC. Physica Scripta, T126 (2007) 6.
  • M. Avice, U. Grossner, O. Nilsen, J.S. Christensen. H. Fjellvåg, B.G. Svensson, High temperature annealing study of Al2O3 deposited by ALCVD on n-type 4H-SiC, Materials Science Forum, 527-529 (2006) 1067.
  • M. Avice, U. Grossner, I, Pintilie, B.G. Svensson, O. Nilsen, H. Fjellvåg, Comparison of near-interface traps in Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC structures, Applied Physics Letters, 89 (2006),  222103/1.
  • V. Khranovskyy, U. Grossner, O. Nilsen, V. Lazorenko, G.V. Lashkarev, B.G. Svensson, R. Yakimova, Structural and morphological properties of ZnO:Ga thin films, Thin Solid Films, 515 (2006) 472.
  • M. Avice, U. Grossner, E.V. Monakhov, J. Grillenberger, O. Nilsen, H. Fjellvåg, B.G. Svensson, Electrical properties of aluminum oxide films grown by atomic layer deposition on n-type 4H-SiC., Materials Science Forum 483-485 (2005) 705-708. 

 

Published May 14, 2013 10:42 AM - Last modified Feb. 8, 2015 5:06 PM
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